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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC07T60SNCX1SA3

Name: SIGC07T60SNCX1SA3
Brand: Infineon Technologies
SKU: SIGC07T60SNCX1SA3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC07T60SNCX1SA3

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC07T60SNCX1SA3.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:3,820

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Product details

Overview

SIGC07T60SNC from Infineon Technologies is a 600 V, 6 A NPT (Non-Punch-Through) IGBT bare die optimized for motor drives and power conversion modules. It features a 2.6 × 2.6 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable paralleling, short-circuit ruggedness, and V_CE(sat) = 1.6–2.5 V at I_C = 6 A, V_GE = 15 V. Used in DuoPack SKP06N60 modules.

For engineers reviewing the SIGC07T60SNC datasheet, SIGC07T60SNC pinout (emitter/gate/collector terminals), SIGC07T60SNC application in motor drives or SMPS, or SIGC07T60SNC equivalent bare-die IGBTs, this page delivers verified chip-level specifications, thermal and switching behavior, package-agnostic terminal mapping, and validated alternatives for module integration.

Technical Context

This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 3–5 V and exhibits low dynamic losses: typical turn-off delay of 248 ns and fall time of 70 ns under 400 V, 6 A, T_j = 150 °C conditions. Its 350–420 pF input capacitance and 23–28 pF reverse transfer capacitance support high-frequency switching up to ~20 kHz in hard-switched topologies.

The die integrates Al–Si 1% emitter metallization (3200 nm), Ni–Ag collector metallization (1400 nm), and photoimide passivation. Designed for conductive epoxy or soft-solder die bonding, it supports wire bonding with ≤500 µm Al wires and requires dry nitrogen storage (<6 months at 23 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage; enables use in 400 V DC bus industrial inverters.
I_C	6 A - Continuous collector current at T_jmax; defines thermal design margin for die-bonded modules.
V_CE(sat)	1.6–2.5 V @ I_C=6 A, V_GE=15 V - Directly impacts conduction loss and heatsink sizing in drive stages.
t_d(off)	248–298 ns - Turn-off delay determines minimum dead-time setting in half-bridge gate drivers.
C_iss	350–420 pF - Input capacitance governs gate drive power requirement and Miller effect sensitivity.
T_j range	−55 to +150 °C - Specifies operational junction temperature window for reliability modeling and derating.
Die size	2.6 × 2.6 mm² - Physical footprint constrains layout area in multi-die power modules and thermal via placement.

Pinout & Package

Package: Bare die (unmounted silicon chip), sawn on foil (Q67041-A4672-A003) or unsawn (Q67041-A4672-A002); no leadframe or molded body. Terminal structure defined by metallized pads: Emitter (1.107 × 1.78 mm), Gate (0.5 × 0.7 mm), Collector (full backside).

Pin/Terminal	Circuit Role	Design Meaning
Emitter pad	Main current return path	Low-inductance Al–Si metallization; connects to source node in half-bridge; defines reference for gate drive loop.
Gate pad	Control electrode	Small-area (0.5 × 0.7 mm) interface for gate driver signal; requires low-L routing to minimize oscillation risk.
Collector backside	High-side power terminal	Ni–Ag metallized full backside; serves as primary heat sink interface and high-voltage output node.

Key Features

Feature	Design Value
Positive temperature coefficient	Enables stable current sharing without external balancing resistors when paralleling multiple dies.
Short-circuit ruggedness	Withstands 10 µs short-circuit events at rated V_CE, enabling robust protection in variable-speed drives.
Low C_rss/C_iss ratio	Crss/Ciss ≈ 0.06–0.07 reduces Miller-induced false turn-on risk during high dv/dt commutation.
100 µm thin wafer	Improves thermal resistance from junction-to-backside, critical for high-power density module packaging.
Epoxy/solder bond compatibility	Frontside metallization and passivation qualified for both conductive adhesive and soft-solder die attach processes.

Applications

Industrial Motor Drives

Switch-Mode Power Supplies

Use Scenario: 3-phase inverter stage in HVAC compressors and pump controllers operating at 16–20 kHz.

IC Role / Device Role / Timing Role: Main switching element in half-bridge leg; handles 6 A RMS output current with <2.5 V saturation drop.

Use Value: Positive tempco and short-circuit rating allow direct paralleling and simplified fault handling without desat detection circuitry.

Use Scenario: Primary-side switch in 1–3 kW telecom rectifiers with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage, medium-current switch managing 400 V DC input and 100 kHz+ switching.

Use Value: Low C_iss and fast t_f reduce gate drive loss and enable efficient zero-voltage switching transitions.

Solar Microinverters

Induction Heating Modules

Use Scenario: Full-bridge H-bridge in single-phase grid-tied microinverter with 250–400 V DC input.

IC Role / Device Role / Timing Role: Output stage IGBT die bonded into compact dual-sided cooling module; operates at 16–18 kHz.

Use Value: 2.6 × 2.6 mm² footprint enables dense layout; 150 °C max T_j supports high ambient operation in rooftop enclosures.

Use Scenario: Resonant inverter bridge in 3–5 kW domestic induction cooktops.

IC Role / Device Role / Timing Role: Hard-switched IGBT die driving series-resonant tank at 20–50 kHz with peak currents >15 A.

Use Value: Short-circuit proofing allows safe operation during pan-detection transients; low V_CE(sat) minimizes conduction loss at high duty cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPT IGBT bare-die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRGB14C40L	400 V rating, 14 A I_C, TO-247 packaged discrete; higher current but lower voltage capability.	Not bare die; requires PCB mounting and thermal interface design; unsuitable for multi-die module integration.	Select only if discrete implementation is preferred over module embedding and 400 V bus suffices.
IKB15N60T	600 V, 15 A, TRENCHSTOP™ technology; lower V_CE(sat) (1.4 V typ), but higher C_iss (650 pF).	Bare die format available (IKB15N60TMA), same footprint not guaranteed; trench process increases Miller susceptibility.	Prefer for lower conduction loss where gate drive strength permits higher C_iss management.

Compared with IRGB14C40L and IKB15N60T, SIGC07T60SNC offers optimal balance of 600 V rating, 6 A current, low C_rss, and proven NPT ruggedness-making it uniquely suited for space-constrained, paralleled, or short-circuit-prone module designs where die-level integration is required.

Availability

SIGC07T60SNC is available at Aetrix Electronics and suitable for industrial motor drives, solar microinverters, and induction heating modules requiring stable component supply and long-term module lifecycle support.

Supply support for SIGC07T60SNC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing infrastructure.

SIGC07T60SNC belongs to Infineon's high-reliability NPT IGBT die portfolio, engineered specifically for embedded integration into power modules targeting industrial drive and renewable energy systems.

FAQ

Is SIGC07T60SNC supplied as a packaged device or bare die?

SIGC07T60SNC is exclusively a bare silicon die-available either sawn on foil (ordering code Q67041-A4672-A003) or unsawn (Q67041-A4672-A002). It has no leadframe, molding compound, or standard package; integration requires die bonding onto DBC substrates or leadframes per customer module design.

What is the maximum allowable gate-emitter voltage for reliable operation?

The absolute maximum gate-emitter voltage is ±20 V per the datasheet. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and −5 V to −8 V for turn-off to ensure robust noise immunity and prevent unintended conduction during high dv/dt events.

Can SIGC07T60SNC be directly paralleled with other IGBT dies without external current-sharing components?

Yes-its positive temperature coefficient of V_CE(sat) ensures inherent current balancing across parallel dies under thermal equilibrium. However, matched gate drive loop inductance and symmetrical thermal mounting are mandatory to maintain dynamic current sharing during switching transients.

Does SIGC07T60SNC require special ESD handling during assembly?

Yes-it is classified as an electrostatic discharge sensitive device per MIL-STD-883. Handling requires grounded workstations, ionized air, wrist straps, and ESD-safe packaging. The photoimide passivation and fine-pitch gate pad make it vulnerable to gate oxide puncture from uncontrolled static discharge.

SIGC07T60SNCX1SA3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 6 A

Current - Collector Pulsed (Icm):: 18 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 6A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 24ns/248ns

Test Condition:: 400V, 6A, 50Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC07T60SNCX1SA3 FAQ

1.How can I place an order for SIGC07T60SNCX1SA3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC07T60SNCX1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC07T60SNCX1SA3 reliable?

The price and inventory of SIGC07T60SNCX1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC07T60SNCX1SA3 is usually 5 days.

3.What payment methods are accepted for SIGC07T60SNCX1SA3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC07T60SNCX1SA3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC07T60SNCX1SA3?

SIGC07T60SNCX1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC07T60SNCX1SA3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC07T60SNCX1SA3?

For technical support, including SIGC07T60SNCX1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC07T60SNCX1SA3 requirements.

6.How does Aetrix verify that SIGC07T60SNCX1SA3 is sourced from the original manufacturer or authorized distributors?

All SIGC07T60SNCX1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC07T60SNCX1SA3 meets industry standards.

7.What is the process for return or replacement of SIGC07T60SNCX1SA3?

All SIGC07T60SNCX1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC07T60SNCX1SA3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC07T60SNCX1SA3 part is unused and in its original packaging.

Return procedure for SIGC07T60SNCX1SA3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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