Infineon Technologies SIGC100T60R3EX1SA1

Overview

SIGC100T60R3EX1SA1 from Infineon Technologies is a 600 V, 200 A rated bare-die TRENCHSTOP™ IGBT3 chip with 1.45 V typical V_CE(sat) at 200 A and 150 °C junction temperature, low tail current, and positive temperature coefficient for stable paralleling-designed for integration into power modules used in industrial motor drives.

For engineers reviewing the SIGC100T60R3EX1SA1 datasheet, SIGC100T60R3EX1SA1 pinout, SIGC100T60R3EX1SA1 application, or SIGC100T60R3EX1SA1 equivalent, key selection criteria include V_CE(sat) at high temperature, short-circuit withstand time (6 µs), RBSOA limits (400 A / 600 V), and die-level thermal resistance implications for module-level thermal design.

Technical Context

This IGBT die employs trench-gate and field-stop technology to achieve low conduction and switching losses simultaneously. Its 9.73 mm × 10.23 mm silicon die integrates an integrated gate resistor (2 Ω typ.) and features AlSiCu front-side metallization with Ni/Ag backside for solder attach.

Rated for virtual junction temperatures from –40 °C to +175 °C, it supports pulsed collector currents up to 600 A and delivers 1.7 V max V_CE(sat) at 150 °C under 200 A, enabling high-efficiency operation in resonant and hard-switching topologies.

Key Specifications

Pinout & Package

Package: Bare die (sawn on foil), 9.73 mm × 10.23 mm, 70 µm silicon thickness, Ni/Ag backside metallization for solder attachment.

Key Features

Applications

Availability

SIGC100T60R3EX1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, home appliance inverters, resonant power supplies, and welding inverters requiring stable component supply and traceable bare-die sourcing.

Supply support for SIGC100T60R3EX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

This die belongs to the TRENCHSTOP™ IGBT3 product line, engineered specifically for high-power-density, high-efficiency discrete and module-based inverters operating at elevated junction temperatures.

FAQ

Is SIGC100T60R3EX1SA1 qualified for automotive use?

No. This bare die is not qualified to AEC-Q101 or any automotive reliability standard. Infineon explicitly states in the datasheet that it is intended for industrial and consumer applications only, and warns against use in safety-critical systems where failure could cause personal injury.

What is the recommended gate drive voltage range?

The absolute maximum gate-emitter voltage is ±20 V, but the datasheet specifies optimal switching performance at V_GE = +15 V for turn-on and –5 V to –10 V for turn-off. Operating outside this range risks increased V_CE(sat), reduced short-circuit ruggedness, or gate oxide degradation.

How should the Ni/Ag backside metallization be handled during die attach?

Infineon strongly recommends avoiding complete consumption of the Ni layer during solder reflow. Use controlled thermal profiles and low-voiding solder pastes to preserve Ni integrity-ensuring mechanical adhesion and long-term intermetallic stability between die and substrate.

Does this die include an integrated freewheeling diode?

No. SIGC100T60R3EX1SA1 is an IGBT-only bare die with no monolithically integrated body diode. External anti-parallel diodes-typically SiC Schottky or fast recovery silicon-are required for inductive load commutation and regenerative energy handling.