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Infineon Technologies SIGC100T65R3EX1SA2
- Part No.:
- SIGC100T65R3EX1SA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC100T65R3EX1SA2.pdf
- Description:
- IGBT TRENCH FS 650V 200A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:9,329
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Product details
Overview
SIGC100T65R3EX1SA2 from Infineon Technologies is a 650 V, 200 A rated TRENCHSTOP™ IGBT3 bare die optimized for industrial power modules. It features low VCE(sat) (1.45 V typ. @ 200 A, 25°C), short tail current, positive temperature coefficient for stable paralleling, and 6 µs short-circuit withstand time at 150°C junction temperature. It is designed for use in motor drives and industrial inverters requiring high efficiency and robust switching.
For engineers reviewing the SIGC100T65R3EX1SA2 datasheet, SIGC100T65R3EX1SA2 pinout, SIGC100T65R3EX1SA2 application, or SIGC100T65R3EX1SA2 equivalent, key selection criteria include VCE(sat) vs. temperature stability, short-circuit ruggedness under 360 V bus conditions, gate threshold voltage distribution (5.1–6.4 V), and die-level thermal resistance constraints in module assembly.
Technical Context
This IGBT3 die employs trench-gate and field-stop architecture to simultaneously reduce conduction loss and switching loss. Its integrated gate resistor (2 Ω) dampens oscillation during hard-switching, and its positive VCE(sat) temperature coefficient enables reliable parallel operation without external current-sharing resistors.
The device is characterized on-wafer at 25°C and 150°C, with static parameters including V(BR)CES ≥ 650 V, ICES ≤ 3.8 µA at 650 V, and Cies = 12335 pF at 25 V. Switching behavior and thermal performance are module-dependent and not specified for the bare die.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE Rating | 650 V - Maximum blocking voltage for industrial 400 V AC input systems with 1.5× safety margin |
| IC (DC) | 200 A - Continuous collector current at Tvj = 175°C, defining die thermal design limit |
| VCE(sat) | 1.45 V (typ.) @ 200 A, 25°C - Directly determines conduction loss and heatsink sizing in module |
| tsc | 6 µs @ VGE=15 V, VCC=360 V, Tvj=150°C - Enables robust short-circuit protection timing in drive gate drivers |
| VGE(th) | 5.8 V (typ.), 5.1–6.4 V (min–max) - Defines minimum gate drive voltage margin and noise immunity |
| Cies | 12335 pF @ VCE=25 V - Impacts gate driver power requirement and dV/dt immunity in high-speed switching |
Pinout & Package
Package: Bare die (no leadframe or molded package); die size 9.73 mm × 10.23 mm; silicon thickness 70 µm; backside metallization Ni/Ag system for solder attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E (Emitter) | Main emitter connection (multiple pads) | Low-inductance, high-current path; multiple E pads enable uniform current distribution in module layout |
| G (Gate) | Control terminal | Single 1.615 mm × 0.817 mm Al pad; requires low-impedance gate loop to minimize ringing |
| T (Test pad) | Process monitoring | Non-functional in final application; must not be electrically contacted in module assembly |
Key Features
| Feature | Design Value |
|---|---|
| Trench & field-stop structure | Enables 650 V rating with reduced specific on-resistance and lower switching losses vs. planar IGBTs |
| Positive VCE(sat) tempco | Ensures inherent current sharing when paralleled-no external emitter resistors required |
| Short tail current | Reduces turn-off energy (Eoff) and di/dt stress on snubber networks and freewheeling diodes |
| Integrated 2 Ω gate resistor | Dampens gate oscillation during fast switching, reducing risk of false turn-on and EMI |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Three-phase inverter stage in 75–110 kW variable-frequency drives for pumps and compressors. IC Role / Device Role / Timing Role: Main switching device in 6-pulse inverter leg; operates at 2–8 kHz with hard-switching topology. Use Value: Low VCE(sat) reduces conduction loss at full load; positive tempco allows scalable power output via multi-die paralleling in compact module footprint. | Use Scenario: Online double-conversion UPS output inverter delivering clean 50/60 Hz sine wave to critical IT loads. IC Role / Device Role / Timing Role: High-efficiency switching element in H-bridge output stage; duty-cycle modulated with sinusoidal PWM. Use Value: 6 µs short-circuit withstand time supports fast fault detection and shutdown, preserving inverter integrity during output faults. |
| Solar Inverters | Induction Heating Systems |
Use Scenario: DC–AC stage in central string inverters converting PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-voltage switch in NPC or T-type multilevel topologies operating up to 16 kHz. Use Value: Low Cres (366 pF) minimizes Miller-induced turn-on risk during high dV/dt commutation, improving reliability in transformerless designs. | Use Scenario: Half-bridge resonant inverter driving 20–100 kHz induction coils for metal heating in forging and brazing. IC Role / Device Role / Timing Role: Fast-switching power switch in zero-voltage switching (ZVS) topology with soft recovery. Use Value: Short tail current reduces switching loss at high frequency, enabling higher power density and improved thermal management in compact enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKW40N65ES5 | Bare die variant of same IGBT3 generation; identical 650 V/200 A rating but larger die (11.5 × 11.5 mm) and higher Cies (14.2 nF) | Higher thermal mass suits slower-switching, high-reliability industrial drives; less suitable for high-frequency solar inverters | Select when module layout allows larger die area and lower switching frequency (<4 kHz) is acceptable |
| FF400R07ME4 | Pre-packaged 650 V, 400 A half-bridge module using IGBT3 dies; includes co-packaged diodes and isolated baseplate | Eliminates die attach and wire bonding; targets rapid prototyping and lower-volume production where module-level qualification is preferred | Select when full module integration, UL/IEC certification, and reduced assembly risk outweigh bare-die cost and customization benefits |
Compared with IKW40N65ES5, SIGC100T65R3EX1SA2 offers tighter VGE(th) spread and smaller die area for higher power density; versus FF400R07ME4, it provides full layout control and thermal optimization in custom power modules but requires full die-level qualification.
Availability
SIGC100T65R3EX1SA2 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply and long-term module manufacturing continuity.
Supply support for SIGC100T65R3EX1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
SIGC100T65R3EX1SA2 belongs to the TRENCHSTOP™ IGBT3 bare die product line, engineered specifically for high-power-density, high-reliability industrial power modules where thermal optimization, paralleling capability, and short-circuit ruggedness are critical.
FAQ
Is SIGC100T65R3EX1SA2 qualified for automotive applications?
No. This bare die is not qualified to AEC-Q101 or any automotive reliability standard. Infineon explicitly states in the datasheet that it is intended for industrial power modules only and excludes automotive use due to lack of stress testing and qualification under automotive environmental and lifetime requirements.
What is the recommended gate drive voltage range?
The absolute maximum gate-emitter voltage is ±20 V, but the datasheet specifies optimal operation at VGE = +15 V for turn-on and –5 V to –10 V for turn-off. Operating outside this range risks premature wear or latch-up; the typical VGE(th) of 5.8 V ensures sufficient margin against noise-induced false triggering.
Can this die be used without an anti-parallel diode in inverter applications?
No. The SIGC100T65R3EX1SA2 is an N-channel IGBT only and lacks intrinsic body diode functionality. An external fast-recovery or SiC Schottky anti-parallel diode must be included in each inverter leg to provide freewheeling current path during dead-time intervals and prevent destructive voltage spikes.
How is short-circuit withstand time validated?
tsc = 6 µs is measured under strictly defined lab conditions: VGE = 15 V, VCC = 360 V, Tvj = 150°C, and single-event pulse. It is not production-tested per unit but verified by characterization across wafer lots. Module-level validation-including RBSOA and SCSOA-is required before deployment per Infineon's application note guidance.
SIGC100T65R3EX1SA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 650 V
- Current - Collector (Ic) (Max):
- 200 A
- Current - Collector Pulsed (Icm):
- 600 A
- Vce(on) (Max) @ Vge, Ic:
- 1.9V @ 15V, 200A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC100T65R3EX1SA2 FAQ
1.How can I place an order for SIGC100T65R3EX1SA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC100T65R3EX1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC100T65R3EX1SA2 reliable?
The price and inventory of SIGC100T65R3EX1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC100T65R3EX1SA2 is usually 5 days.
3.What payment methods are accepted for SIGC100T65R3EX1SA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC100T65R3EX1SA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC100T65R3EX1SA2?
SIGC100T65R3EX1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC100T65R3EX1SA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC100T65R3EX1SA2?
For technical support, including SIGC100T65R3EX1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC100T65R3EX1SA2 requirements.
6.How does Aetrix verify that SIGC100T65R3EX1SA2 is sourced from the original manufacturer or authorized distributors?
All SIGC100T65R3EX1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC100T65R3EX1SA2 meets industry standards.
7.What is the process for return or replacement of SIGC100T65R3EX1SA2?
All SIGC100T65R3EX1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC100T65R3EX1SA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC100T65R3EX1SA2 part is unused and in its original packaging.
Return procedure for SIGC100T65R3EX1SA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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