Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies SIGC10T60EX7SA1

Part No.:
SIGC10T60EX7SA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
Die
Datasheet:
AetrixSIGC10T60EX7SA1.pdf
Description:
IGBT TRENCH FS 600V 20A DIE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,015

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SIGC10T60EX7SA1 from Infineon Technologies is a 600 V, 20 A rated TRENCHSTOP™ IGBT3 bare die optimized for industrial power control in discrete and module implementations. It features 1.5 V typical VCE(sat), 6 µs short-circuit withstand time at 150 °C, and positive temperature coefficient for stable parallel operation in motor drives and resonant converters.

For engineers reviewing the SIGC10T60EX7SA1 datasheet, SIGC10T60EX7SA1 pinout, SIGC10T60EX7SA1 application, or SIGC10T60EX7SA1 equivalent, key selection criteria include VCE(sat) stability across temperature, RBSOA compliance at 40 A/600 V, gate threshold voltage distribution (5.0–6.5 V), and wafer-level electrostatic discharge classification per MIL-STD-883.

Technical Context

This IGBT3 die employs trench-gate and field-stop architecture to achieve low conduction loss and fast turn-off with minimal tail current. Its 3.19 mm × 3.21 mm silicon die integrates AlSiCu frontside metallization and Ni/Ag backside metal for reliable thermal and electrical interface bonding in power modules.

Rated for continuous operation up to 175 °C junction temperature, it delivers 1100 pF typical input capacitance (Cies) and 32 pF reverse transfer capacitance (Cres) at 25 V, enabling predictable switching behavior in hard-switched and resonant topologies when mounted with controlled thermal resistance.

Key Specifications

ParameterValue and Actual Design Meaning
VCE Rating600 V - supports DC bus voltages up to 400 V AC line-fed systems with margin
IC Continuous20 A - defines maximum steady-state current handling at Tvj ≤ 150 °C
VCE(sat)1.5 V typ. @ 20 A, 15 VGE - directly determines conduction loss and thermal load in output stage
tsc6 µs @ VCC = 360 V, Tvj = 150 °C - sets minimum fault-clearing window for protection circuitry
Cies1100 pF typ. @ 25 V - impacts gate drive power requirement and Miller effect sensitivity
VGE(th)5.8 V typ. (5.0–6.5 V range) - defines minimum gate voltage for reliable turn-on and noise immunity
Tvj Range−40 to +175 °C - enables operation in sealed industrial enclosures without active cooling

Pinout & Package

Package: Bare die (no leadframe or molded package); 3.19 mm × 3.21 mm silicon chip with photoimide passivation, AlSiCu frontside metallization, and Ni/Ag backside metallization. Designed for die-attach via conductive epoxy or soft solder onto DBC substrates or leadframes.

Pin/TerminalCircuit RoleDesign Meaning
E (Emitter pad)Current return path for collector-emitter conductionLarge-area Al pad (size per chip drawing) - minimizes emitter inductance and bond wire stress
G (Gate pad)Control terminal for MOS-controlled bipolar conduction0.36 mm × 0.51 mm Al pad - sized for ≤500 µm Al wire bonding with low parasitic inductance

Key Features

FeatureDesign Value
Low VCE(sat)1.5 V typ. at 20 A reduces conduction loss by >15% vs. prior IGBT2 generation in same die size
Short tail currentMinimizes turn-off energy (Eoff) and enables higher switching frequencies without excessive heating
Positive VCE(sat) tempcoEnables inherent current sharing in paralleled dies without external ballasting resistors
RBSOA complianceValidated at 40 A / 600 V, Tvj ≤ 150 °C - supports robust operation under transient overloads

Applications

Industrial Motor DrivesHome Appliance Inverters

Use Scenario: Variable-speed control of 3-phase induction motors in HVAC and pump systems operating from 380–480 V AC mains.

IC Role / Device Role / Timing Role: Main switching device in 6-pack inverter bridge; handles 20 A RMS output current with <1.5 V conduction drop.

Use Value: Enables >97% inverter efficiency at full load while maintaining <100 °C junction rise with standard heatsinking.

Use Scenario: Compressor and fan inverter stages in refrigerators and washing machines with PFC front-end.

IC Role / Device Role / Timing Role: Low-loss switching element in half-bridge topology; operates at 8–16 kHz with soft gate driving.

Use Value: Reduces audible noise and EMI through controlled dV/dt and low tail current during commutation.

Resonant LLC ConvertersWelding Power Supplies

Use Scenario: Primary-side switching in high-efficiency 1–3 kW LLC resonant DC-DC converters for server PSUs.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-enabled hard-switched node; leverages low Cres (32 pF) for precise timing control.

Use Value: Supports ZVS down to 50% load with <1.1 V VCE(sat) ensuring stable regulation and reduced transformer stress.

Use Scenario: Output chopper stage in IGBT-based inverter welders delivering 200–500 A DC output.

IC Role / Device Role / Timing Role: High-current, high-repetition-rate switching device; withstands repeated 6 µs short-circuit events during arc ignition.

Use Value: Eliminates need for external crowbar circuits due to validated 6 µs tsc at 150 °C junction temperature.

Availability

SIGC10T60EX7SA1 is available at Aetrix Electronics and suitable for industrial motor drives, home appliance inverters, and resonant LLC converters requiring stable component supply and wafer-level traceability.

Supply support for SIGC10T60EX7SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and fabrication facilities.

This bare die belongs to the TRENCHSTOP™ IGBT3 product line, engineered specifically for high-efficiency, high-reliability industrial power conversion where low conduction loss and robust short-circuit capability are critical.

FAQ

Is SIGC10T60EX7SA1 qualified for automotive applications?

No. The datasheet explicitly states this device is not qualified per AEC-Q101. It is intended for industrial and consumer power applications only. Automotive-grade alternatives require separate qualification evidence, including HTOL, TC, and UHAST testing reports.

What is the recommended die-attach method for SIGC10T60EX7SA1?

Infineon specifies electrically conductive epoxy glue or soft solder for die attachment. Backside metallization uses Ni/Ag to ensure solder wetting; the Ni layer must not be fully consumed during reflow to maintain mechanical integrity and thermal conductivity.

Does SIGC10T60EX7SA1 include an integrated gate resistor?

No. The datasheet lists "rG none" under Static Characteristics, confirming no monolithic gate resistor is integrated. External gate resistance must be selected based on desired dV/dt, Eoff, and gate drive strength to avoid oscillation or overshoot.

How is short-circuit ruggedness verified for this bare die?

Short-circuit withstand time (tsc = 6 µs) is verified by design and characterization-not production tested. It is validated under VGE = 15 V, VCC = 360 V, and Tvj = 150 °C, with a maximum of 1000 events and ≥1 s between pulses per the datasheet's safety guidance.

SIGC10T60EX7SA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™
Package/Case:
Die
Packaging:
Bulk
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
20 A
Current - Collector Pulsed (Icm):
60 A
Vce(on) (Max) @ Vge, Ic:
1.9V @ 15V, 20A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Die

SIGC10T60EX7SA1 FAQ

1.How can I place an order for SIGC10T60EX7SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC10T60EX7SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC10T60EX7SA1 reliable?

The price and inventory of SIGC10T60EX7SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC10T60EX7SA1 is usually 5 days.

3.What payment methods are accepted for SIGC10T60EX7SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC10T60EX7SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC10T60EX7SA1?

SIGC10T60EX7SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC10T60EX7SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC10T60EX7SA1?

For technical support, including SIGC10T60EX7SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC10T60EX7SA1 requirements.

6.How does Aetrix verify that SIGC10T60EX7SA1 is sourced from the original manufacturer or authorized distributors?

All SIGC10T60EX7SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC10T60EX7SA1 meets industry standards.

7.What is the process for return or replacement of SIGC10T60EX7SA1?

All SIGC10T60EX7SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC10T60EX7SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC10T60EX7SA1 part is unused and in its original packaging.

Return procedure for SIGC10T60EX7SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SIGC10T60EX7SA1 Tags

  • SIGC10T60EX7SA1
  • SIGC10T60EX7SA1 PDF
  • SIGC10T60EX7SA1 Datasheet
  • SIGC10T60EX7SA1 Specifications
  • SIGC10T60EX7SA1 Images
  • Infineon Technologies
  • Infineon Technologies SIGC10T60EX7SA1
  • Buy SIGC10T60EX7SA1
  • SIGC10T60EX7SA1 Price
  • SIGC10T60EX7SA1 Distributor
  • SIGC10T60EX7SA1 Supplier
  • SIGC10T60EX7SA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER