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Infineon Technologies SIGC11T60NCX1SA2
- Part No.:
- SIGC11T60NCX1SA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC11T60NCX1SA2.pdf
- Description:
- IGBT 3 CHIP 600V WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:9,266
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Product details
Overview
SIGC11T60NCX1SA2 from Infineon Technologies is a 600 V, 10 A NPT (Non-Punch-Through) IGBT die in bare-die format, designed for high-voltage switching in motor drives and industrial inverters. It features a positive temperature coefficient for stable parallel operation, 100 µm chip thickness, and 3.25 × 3.25 mm² active die area with Al–Si 1% emitter metallization and Ni–Ag collector metallization.
For engineers reviewing the SIGC11T60NCX1SA2 datasheet, SIGC11T60NCX1SA2 pinout (emitter/gate/collector terminals), SIGC11T60NCX1SA2 application in 3-phase inverter stages, or SIGC11T60NCX1SA2 equivalent bare-die IGBTs for module assembly, this page provides verified electrical specs, thermal interface guidance, die bonding recommendations, and wafer-level handling constraints per Infineon's L7302-M Edition 2 specification.
Technical Context
This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 4.5–6.5 V and delivers VCE(sat) = 1.7–2.5 V at IC = 10 A and VGE = 15 V. Its dynamic characteristics include Ciss = 550 pF, Coss = 62 pF, and Crss = 42 pF at VCE = 25 V, f = 1 MHz, enabling predictable switching behavior in hard-switched topologies.
Switching timing is characterized under inductive load conditions (VCC = 300 V, IC = 10 A, Tj = 125 °C, RG = 27 Ω): td(on) = 20 ns, tr = 8 ns, td(off) = 110 ns, tf = 20 ns. The die's 100 µm thickness and photoimide passivation support robust thermal cycling and epoxy/soft-solder die attach compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 600 V - Maximum blocking voltage rating; defines use in 400 V AC input systems with 2× safety margin. |
| IC | 10 A - Continuous DC collector current at Tjmax; sets thermal design baseline for heatsink sizing. |
| VCE(sat) | 1.7–2.5 V @ IC=10 A, VGE=15 V - Directly determines conduction loss and junction temperature rise in PWM operation. |
| VGE(th) | 4.5–6.5 V - Gate threshold range ensures reliable turn-on with standard ±15 V gate drivers and noise immunity. |
| Ciss/Coss/Crss | 550 / 62 / 42 pF @ VCE=25 V - Defines gate drive power requirement and Miller effect sensitivity in high-dv/dt environments. |
| td(off)/tf | 110 / 20 ns @ Tj=125 °C - Critical for calculating switching losses and snubber sizing in 10–20 kHz inverter designs. |
| Die size | 3.25 × 3.25 mm² (10.6 mm² total, 7.4 mm² active) - Determines thermal resistance via substrate contact area and wire-bond layout density. |
Pinout & Package
Package: Bare die (unmounted silicon chip), sawn on foil, no leadframe or molded package. Intended for integration into custom IGBT modules or hybrid substrates using conductive die attach (solder or electrically conductive glue) and aluminum wire bonding (≤500 µm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter pad (2.0 × 1.6 mm²) | Low-side current return path | Primary heat extraction surface; requires full-area metallized substrate contact for optimal Rth(j-c). |
| Gate pad (1.08 × 0.68 mm²) | Control terminal for channel inversion | Small-area pad mandates low-inductance gate loop routing to suppress oscillation during fast switching. |
| Collector metallization (Ni–Ag) | High-voltage output terminal | Backside collector enables vertical current flow; must be bonded to insulated metal baseplate or DBC substrate. |
Key Features
| Feature | Design Value |
|---|---|
| NPT technology | Enables uniform electric field distribution and soft switching behavior without tail current, reducing EMI in variable-speed drives. |
| Positive temperature coefficient | Ensures inherent current sharing when paralleling multiple dies, eliminating need for external emitter resistors in multi-chip modules. |
| Photoimide passivation | Provides mechanical protection and moisture resistance during die handling, wire bonding, and encapsulation processes. |
| 100 µm chip thickness | Optimizes trade-off between breakdown voltage capability and thermal resistance-thinner than PT/FS IGBTs but thicker than ultra-thin trench variants. |
| Al–Si 1% emitter metallization | Delivers low contact resistance and high electromigration resistance for long-term reliability under high-current pulsed operation. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Three-phase inverter stage converting DC bus to variable-frequency AC for 0.75–2.2 kW induction motors. IC Role / Device Role / Timing Role: High-voltage switching element in bridge-leg configuration; commutates at 8–16 kHz with controlled dv/dt. Use Value: Low VCE(sat) minimizes conduction loss at rated load; NPT softness reduces snubber stress and EMI filter cost. | Use Scenario: Online double-conversion UPS output inverter delivering clean 50/60 Hz sine wave under battery backup. IC Role / Device Role / Timing Role: Final-stage power switch in full-bridge topology; operates in square-wave or SPWM mode with bidirectional energy flow. Use Value: Stable VGE(th) and positive tempco ensure consistent turn-on timing across temperature swings during extended runtime. |
| Solar Inverters (String Level) | Induction Heating Systems |
Use Scenario: DC–AC stage in single-phase string inverters interfacing PV arrays to residential grids (230 V AC). IC Role / Device Role / Timing Role: Main switching device in H-bridge; handles 10–20 kHz PWM with high efficiency at partial load. Use Value: Low Coss and Crss reduce switching loss and gate driver loading, improving MPPT efficiency at low irradiance. | Use Scenario: Resonant half-bridge inductor driver for cooktops and industrial heating coils (20–50 kHz). IC Role / Device Role / Timing Role: Hard-switched resonant switch; subjected to high di/dt and repetitive overcurrent transients. Use Value: Robust 600 V rating and 30 A pulsed current capability withstand short-circuit events during coil detuning or fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN100N60B3 | Bare die with 600 V/100 A rating; trench-gate PT structure; higher current capacity but larger die (6.5 × 6.5 mm²). | Designed for higher-power modules (>10 kW); not drop-in due to footprint and gate charge mismatch. | Select when scaling to >15 kW inverters requiring lower Ron and higher IC, accepting larger die area and different gate drive energy. |
| STMicroelectronics STGP10NC60KD | 600 V/10 A TO-247 packaged IGBT; planar NPT; same VCE(sat) range but includes integrated FRD and standardized leadform. | Used in discrete PCB-mount designs; lacks bare-die flexibility for custom thermal management or paralleling. | Choose for prototyping or low-volume board-level builds where module integration is unnecessary and leaded packaging is preferred. |
Compared with IXGN100N60B3 and STGP10NC60KD, SIGC11T60NCX1SA2 offers optimized die size and thermal interface control for compact, high-density IGBT modules-ideal when custom substrate layout, direct baseplate cooling, and precise current sharing are required.
Availability
SIGC11T60NCX1SA2 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply and wafer-level traceability.
Supply support for SIGC11T60NCX1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, headquartered in Munich.
SIGC11T60NCX1SA2 belongs to Infineon's high-voltage discrete IGBT die portfolio, developed specifically for module manufacturers building rugged, thermally efficient inverters for industrial automation and renewable energy systems.
FAQ
What is the recommended die attach method for SIGC11T60NCX1SA2?
Infineon specifies electrically conductive solder (e.g., SnAgCu or PbSn) or conductive epoxy for emitter-side die attach. Solder provides superior thermal conductivity and power cycling endurance; epoxy allows lower-temperature processing but requires careful void control. Backside collector must be bonded to an insulated metal substrate or DBC ceramic.
Can SIGC11T60NCX1SA2 be paralleled with other IGBT dies?
Yes-its positive temperature coefficient of VCE(sat) enables stable current sharing without emitter ballasting resistors. Successful paralleling requires matched gate drive impedance, symmetrical layout, identical thermal mounting pressure, and uniform substrate temperature across all dies to avoid thermal runaway.
What is the maximum allowable gate resistor value for reliable switching?
With RG = 27 Ω, measured switching times meet spec. Increasing RG beyond 47 Ω significantly extends td(off) and tf, raising switching losses. For 16 kHz operation, RG should remain ≤33 Ω to maintain <1.5 W gate drive loss and avoid excessive Miller-induced turn-on risk.
Is SIGC11T60NCX1SA2 qualified for automotive under-hood use?
No-this die is specified for industrial temperature range (−55 °C to +150 °C) but lacks AEC-Q101 qualification, automotive-grade process controls, or zero-defect screening. It is intended for industrial, solar, and UPS applications-not automotive powertrain or ADAS systems.
SIGC11T60NCX1SA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 10 A
- Current - Collector Pulsed (Icm):
- 30 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 10A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- 20ns/110ns
- Test Condition:
- 300V, 10A, 27Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC11T60NCX1SA2 FAQ
1.How can I place an order for SIGC11T60NCX1SA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC11T60NCX1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC11T60NCX1SA2 reliable?
The price and inventory of SIGC11T60NCX1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC11T60NCX1SA2 is usually 5 days.
3.What payment methods are accepted for SIGC11T60NCX1SA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC11T60NCX1SA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC11T60NCX1SA2?
SIGC11T60NCX1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC11T60NCX1SA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC11T60NCX1SA2?
For technical support, including SIGC11T60NCX1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC11T60NCX1SA2 requirements.
6.How does Aetrix verify that SIGC11T60NCX1SA2 is sourced from the original manufacturer or authorized distributors?
All SIGC11T60NCX1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC11T60NCX1SA2 meets industry standards.
7.What is the process for return or replacement of SIGC11T60NCX1SA2?
All SIGC11T60NCX1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC11T60NCX1SA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC11T60NCX1SA2 part is unused and in its original packaging.
Return procedure for SIGC11T60NCX1SA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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