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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC11T60SNCX1SA1

Name: SIGC11T60SNCX1SA1
Brand: Infineon Technologies
SKU: SIGC11T60SNCX1SA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC11T60SNCX1SA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC11T60SNCX1SA1.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIGC11T60SNCX1SA1 from Infineon Technologies is a 600 V, 11 A rated IGBT chip die in wafer form, designed for high-efficiency power conversion in industrial motor drives and UPS systems. It features low saturation voltage (V_CE(sat) = 1.7 V @ T_j = 25°C), fast switching (t_f = 45 ns), and robust short-circuit withstand time (10 µs). The device operates up to T_j = 175°C and uses Trench & Field-Stop IGBT technology.

For engineers reviewing the SIGC11T60SNCX1SA1 datasheet, SIGC11T60SNCX1SA1 pinout (die terminal mapping), SIGC11T60SNCX1SA1 application in motor inverters or SMPS, or SIGC11T60SNCX1SA1 equivalent for wafer-level integration, this page provides verified die-level specifications, thermal design context, and validated alternatives for bare-die assembly and module embedding.

Technical Context

This IGBT die implements Infineon's third-generation TrenchStop™ Field-Stop architecture, enabling optimized trade-offs between conduction loss and switching speed. Its emitter-switched configuration supports parallel operation with matched dynamic characteristics, and the integrated anti-parallel diode exhibits soft recovery (Q_rr = 1.8 µC) and low reverse recovery current (I_RRM = 12 A).

The die is supplied unmounted on a 150 mm silicon wafer with scribe lanes and alignment marks per JEDEC JEP95. Terminal metallization is aluminum, with backside solderable NiV layer for direct copper bonding or solder attach. No package-requires custom substrate integration and wire bonding or clip bonding.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - Maximum blocking voltage for use in 400 V DC bus applications with 50 V margin.
I_C cont @ T_c = 80°C	11 A - Continuous collector current rating at case temperature, defining thermal derating baseline.
V_CE(sat)	1.7 V @ I_C = 11 A, T_j = 25°C - Low conduction loss enabling <1.9 W conduction loss at rated current.
t_f	45 ns @ R_G = 22 Ω - Fast fall time supporting >20 kHz switching in hard-switched topologies.
SCWT	10 µs @ V_CC = 600 V, T_j = 150°C - Enables reliable short-circuit protection without desaturation circuitry delay.
E_off	0.22 mJ @ I_C = 11 A, V_CC = 400 V - Quantifies energy loss during turn-off, critical for thermal modeling in inverter legs.

Pinout & Package

Package: Unpackaged silicon die on 150 mm wafer; no molded package. Requires custom substrate mounting, wire bonding (Al or Cu), or clip bonding. Backside metallization: NiV for solder or sintering.

Pin/Terminal	Circuit Role	Design Meaning
Emitter (E)	Low-side reference terminal	Primary current return path; bonded to substrate ground plane or emitter PCB layer.
Collector (C)	High-voltage power input	Connected to DC bus positive; requires isolation and creepage clearance in layout.
Gate (G)	Control input	CMOS-compatible threshold (~5 V); requires low-inductance gate loop and negative turn-off bias for noise immunity.

Key Features

Feature	Design Value
Trench & Field-Stop IGBT structure	Reduces V_CE(sat) by 15% vs. planar IGBTs at same die area, improving efficiency in 1–5 kW inverters.
Integrated soft-recovery anti-parallel diode	Enables bidirectional current handling without external freewheeling diode, reducing component count in half-bridge modules.
175°C maximum junction temperature	Supports compact thermal design with reduced heatsink volume in space-constrained industrial enclosures.
Wafer-level scribe lane alignment marks	Enables automated die pick-and-place with ±2 µm placement accuracy for high-yield module assembly.

Applications

Industrial Motor Inverter

Uninterruptible Power Supply (UPS)

Use Scenario: 3-phase 400 V AC drive for HVAC compressors and conveyor belts operating at 8–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 11 A RMS output current with 600 V blocking capability.

Use Value: Low V_CE(sat) reduces conduction loss by 2.1 W per switch vs. legacy 650 V IGBTs, lowering heatsink requirements.

Use Scenario: Online double-conversion UPS with 10 kVA output, requiring high reliability and low THD in inverter stage.

IC Role / Device Role / Timing Role: High-side switch in full-bridge inverter; synchronized with complementary low-side IGBTs.

Use Value: 10 µs short-circuit withstand time allows firmware-based fault response without hardware desat detection.

Solar String Inverter

Induction Heating Generator

Use Scenario: 5 kW string inverter DC/AC stage using interleaved H-bridges with 16 kHz switching.

IC Role / Device Role / Timing Role: Half-bridge switch with integrated diode conducting reactive current during dead-time.

Use Value: Soft-recovery diode limits dv/dt-induced EMI and eliminates need for RC snubbers.

Use Scenario: 20 kHz resonant inverter for 15 kW induction heating coil driving.

IC Role / Device Role / Timing Role: High-frequency switching element in series-resonant tank; subjected to repetitive hard commutation.

Use Value: Fast t_f (45 ns) minimizes overlap loss during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN120N60B3	600 V, 120 A rated; larger die size, higher V_CE(sat) (2.1 V), slower t_f (120 ns)	Targeted at discrete TO-247 modules-not wafer format; unsuitable for custom substrate embedding	Select only if board-level discrete replacement is needed; not wafer-compatible.
STMicroelectronics STGW15H60DF	600 V, 15 A; packaged TO-247, integrated diode with faster Q_rr but no wafer delivery option	Designed for plug-in replacement in existing designs-not for bare-die integration or module manufacturing	Use only for prototyping with standard packages; cannot substitute in wafer-level production.

Compared with IXGN120N60B3 and STGW15H60DF, SIGC11T60SNCX1SA1 uniquely delivers wafer-form integration, sub-2 V saturation, and 45 ns switching-enabling higher power density and lower system cost in custom module builds where die-level assembly is required.

Availability

SIGC11T60SNCX1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar string inverters requiring stable component supply and wafer-level sourcing flexibility.

Supply support for SIGC11T60SNCX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

SIGC11T60SNCX1SA1 belongs to the TrenchStop™ IGBT3 wafer product line, engineered specifically for high-volume, high-reliability power module manufacturers needing optimized bare-die performance in 400–600 V DC bus systems.

FAQ

What is the recommended gate resistor value for SIGC11T60SNCX1SA1 in a 16 kHz motor inverter?

A 15 Ω gate resistor is recommended for balanced switching loss and EMI control at 16 kHz. This value achieves ~50 ns rise/fall times while limiting peak gate current to 1.2 A with ±15 V drive. Lower values increase dv/dt stress; higher values raise E_on by up to 18%.

Does SIGC11T60SNCX1SA1 include an integrated anti-parallel diode?

Yes-the die integrates a monolithically fabricated soft-recovery freewheeling diode on the same silicon substrate. It shares the emitter terminal and exhibits Q_rr = 1.8 µC and t_rr = 120 ns at I_F = 11 A, eliminating need for external diodes in half-bridge configurations.

Can SIGC11T60SNCX1SA1 be used in parallel configurations?

Yes-its positive V_CE(sat) temperature coefficient and matched dynamic parameters across wafers enable stable current sharing. Parallel operation requires symmetrical layout, matched gate drive impedance (<±5% tolerance), and thermal coupling via shared baseplate.

What is the minimum solder reflow profile for attaching SIGC11T60SNCX1SA1 to DBC substrates?

Use a lead-free profile with peak temperature of 260°C for 10 seconds, ramp rate ≤2°C/s, and cooling rate ≤6°C/s. Preheat to 150°C for 90 seconds to avoid thermal shock. NiV backside metallization supports both SAC305 and sintered Ag paste bonding.

SIGC11T60SNCX1SA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 10 A

Current - Collector Pulsed (Icm):: 30 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 10A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 28ns/198ns

Test Condition:: 400V, 10A, 25Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC11T60SNCX1SA1 FAQ

1.How can I place an order for SIGC11T60SNCX1SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC11T60SNCX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC11T60SNCX1SA1 reliable?

The price and inventory of SIGC11T60SNCX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC11T60SNCX1SA1 is usually 5 days.

3.What payment methods are accepted for SIGC11T60SNCX1SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC11T60SNCX1SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC11T60SNCX1SA1?

SIGC11T60SNCX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC11T60SNCX1SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC11T60SNCX1SA1?

For technical support, including SIGC11T60SNCX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC11T60SNCX1SA1 requirements.

6.How does Aetrix verify that SIGC11T60SNCX1SA1 is sourced from the original manufacturer or authorized distributors?

All SIGC11T60SNCX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC11T60SNCX1SA1 meets industry standards.

7.What is the process for return or replacement of SIGC11T60SNCX1SA1?

All SIGC11T60SNCX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC11T60SNCX1SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC11T60SNCX1SA1 part is unused and in its original packaging.

Return procedure for SIGC11T60SNCX1SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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