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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC11T60SNCX1SA2

Name: SIGC11T60SNCX1SA2
Brand: Infineon Technologies
SKU: SIGC11T60SNCX1SA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC11T60SNCX1SA2

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC11T60SNCX1SA2.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIGC11T60SNC from Infineon Technologies is a 600 V, 10 A NPT (Non-Punch-Through) IGBT bare die optimized for industrial motor drives, featuring 1.7–2.4 V V_CE(sat) at 10 A/15 V_GE, 100 µm thickness, and positive temperature coefficient for stable parallel operation. It is designed for integration into custom power modules targeting 3-phase inverter stages.

For engineers reviewing the SIGC11T60SNC datasheet, SIGC11T60SNC pinout (emitter/gate/collector terminals), SIGC11T60SNC application in motor drive inverters, or SIGC11T60SNC equivalent bare-die IGBTs, this page provides verified chip-level specifications, thermal and switching behavior, die bonding guidance, and module-integration context - all derived from Infineon's official chip data sheet L 7302-S, Edition 2.

Technical Context

This NPT-technology IGBT die uses a 100 µm silicon thickness and 3.25 × 3.25 mm² active area (7.4 mm²) to balance conduction loss and switching speed. Its positive temperature coefficient of V_CE(sat) enables inherent current sharing in paralleled configurations without external current-balancing resistors.

Switching performance is characterized under 400 V DC bus, 10 A load, and 25 Ω gate resistance: typical turn-off delay is 218 ns and fall time is 29 ns - ~40% faster than Infineon's Standard IGBT 2 under comparable conditions. Dynamic parameters (C_iss = 605 pF, C_oss = 68.5 pF, C_rss = 46.5 pF) reflect low Miller capacitance for improved gate-drive robustness.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	600 V - supports 400 V DC-link inverters with 1.5× voltage margin for transient overvoltage handling
I_C (DC)	10 A - rated continuous collector current at T_j = 150 °C with appropriate heatsinking
V_CE(sat)	1.7–2.4 V @ 10 A, 15 V_GE - defines conduction loss in inverter leg; lower end reduces thermal stress
V_GE(th)	3–5 V - ensures reliable turn-on with standard +15 V gate drivers while suppressing noise-induced false triggering
t_f	26–32 ns @ T_j = 150 °C - fast fall time minimizes switching loss during high-frequency PWM (e.g., >10 kHz)
C_rss	42–51 pF - low reverse transfer capacitance improves dv/dt immunity and gate-drive stability
T_j Range	−55 to +150 °C - qualified for industrial ambient and junction temperatures in enclosed drive cabinets

Pinout & Package

Package: Bare die (unmounted silicon chip), 3.25 × 3.25 mm² outline, 100 µm thickness, sawn on foil carrier. Not housed in leaded or surface-mount package.

Pin/Terminal	Circuit Role	Design Meaning
Emitter Pad (2.0 × 1.6 mm²)	Low-side reference terminal for main current path	Large AlSi1% metallization enables low-inductance wire bonding and robust die attach to DBC substrates
Gate Pad (1.08 × 0.68 mm²)	Control input for MOS-controlled bipolar conduction	Small-area NiAg passivated pad compatible with 500 µm Al wire bonding; requires < ±20 V drive
Collector Pad (entire backside)	High-voltage output terminal and thermal interface	Backside NiAg metallization supports conductive epoxy or soft-solder die bonding to copper baseplates for dual thermal/electrical conduction

Key Features

Feature	Design Value
NPT silicon technology	Enables uniform electric field distribution and soft, controllable turn-off without tail current - critical for snubberless inverter design
Positive V_CE(sat) tempco	Ensures natural current sharing when multiple dies are paralleled on a single substrate, eliminating need for emitter resistors
Photoimide frontside passivation	Provides mechanical protection and humidity resistance during module assembly and long-term operation in humid industrial environments
150 mm wafer fabrication	Supports high-yield production and consistent parametric spread across batches used in OEM power module manufacturing

Applications

Industrial Motor Drives

UPS Inverter Stages

Use Scenario: Three-phase 400 V AC variable-speed drive controlling 0.75–2.2 kW induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Main switching device in each inverter leg; operates at 8–16 kHz PWM frequency with hard-switched commutation.

Use Value: Low V_CE(sat) and fast t_f reduce conduction and switching losses, enabling >97% inverter efficiency at full load.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from rectified DC bus during mains failure.

IC Role / Device Role / Timing Role: Output stage IGBT in H-bridge inverter; switches at fixed 10 kHz with sinusoidal PWM modulation.

Use Value: Stable V_CE(sat) tempco ensures balanced current sharing across paralleled dies, improving system reliability under overload.

Solar String Inverters

Welding Power Supplies

Use Scenario: DC/AC conversion stage in single-phase transformerless string inverters interfacing 600 V PV arrays.

IC Role / Device Role / Timing Role: High-side and low-side switch in full-bridge topology; subjected to repetitive 600 V blocking and 10–20 kHz switching.

Use Value: 600 V V_(BR)CES rating with 100% test screening provides margin against PV open-circuit voltage surges and lightning transients.

Use Scenario: Primary-side inverter in IGBT-based inverter welders delivering pulsed 200–400 A output at 1–5 kHz.

IC Role / Device Role / Timing Role: Fast-switching power switch in resonant or hard-switched inverter; handles high di/dt and repetitive short-circuit stress.

Use Value: Low C_rss and controlled turn-off minimize gate oscillation and EMI during high-di/dt transitions, easing EMI filter design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT bare-die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGH10N60B3	Bare die, 600 V/10 A, PT technology; higher V_CE(sat) (2.2–2.8 V), slower t_f (45 ns)	Limited suitability for >12 kHz switching due to higher switching loss	Select if cost sensitivity outweighs switching efficiency; verify gate-drive strength for higher C_iss
STMicroelectronics STGP10NC60KD	TO-247 packaged IGBT (not bare die); same V_CE/I_C rating but larger footprint and higher thermal resistance	Not suitable for custom module integration; only for discrete PCB-level designs	Choose only when module-level assembly capability is unavailable and board space permits TO-247 mounting

Compared with IXGH10N60B3 and STGP10NC60KD, SIGC11T60SNC delivers superior switching speed and thermal integration flexibility as a bare die - essential for compact, high-power-density modules where layout parasitics and thermal management are tightly coupled.

Availability

SIGC11T60SNC is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverter stages, solar string inverters, and welding power supplies requiring stable component supply and traceable wafer-lot sourcing.

Supply support for SIGC11T60SNC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, headquartered in Munich.

SIGC11T60SNC belongs to Infineon's legacy NPT IGBT bare-die portfolio, engineered specifically for high-reliability, medium-power industrial inverter modules where thermal coupling, paralleling stability, and switching efficiency are co-optimized.

FAQ

Is SIGC11T60SNC supplied in tape-and-reel or waffle pack?

No - SIGC11T60SNC is delivered as bare die on foil carrier (Q67050-A4155-A001), not in tape-and-reel or waffle pack. It requires manual or automated pick-and-place handling with vacuum nozzles rated for 100 µm thin dies. Storage must be in dry nitrogen within original sealed container.

What gate resistor value is recommended for optimal switching performance?

A 25 Ω gate resistor is specified in the datasheet for switching characterization (t_d(off), t_f). For system-level optimization, 15–33 Ω is typical: lower values improve turn-off speed but increase gate-drive peak current and EMI; higher values reduce EMI but raise switching loss. Layout parasitic inductance must be minimized regardless of R_G.

Can SIGC11T60SNC be die-bonded using non-conductive epoxy?

No - the collector is the primary thermal and electrical path; non-conductive epoxy would isolate the collector electrically, preventing circuit functionality. Only electrically conductive adhesives (e.g., silver-filled epoxy) or soft solder (SnAgCu) are acceptable per Infineon's assembly guidelines.

Does this die include integrated gate protection like TVS or desaturation detection?

No - SIGC11T60SNC is a fundamental switching die with no on-die protection circuitry. External gate resistors, clamping diodes, and desaturation detection circuits must be implemented at the module or driver board level per IEC 61800-5-1 functional safety requirements.

SIGC11T60SNCX1SA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 10 A

Current - Collector Pulsed (Icm):: 30 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 10A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 28ns/198ns

Test Condition:: 400V, 10A, 25Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC11T60SNCX1SA2 FAQ

1.How can I place an order for SIGC11T60SNCX1SA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC11T60SNCX1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC11T60SNCX1SA2 reliable?

The price and inventory of SIGC11T60SNCX1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC11T60SNCX1SA2 is usually 5 days.

3.What payment methods are accepted for SIGC11T60SNCX1SA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC11T60SNCX1SA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC11T60SNCX1SA2?

SIGC11T60SNCX1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC11T60SNCX1SA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC11T60SNCX1SA2?

For technical support, including SIGC11T60SNCX1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC11T60SNCX1SA2 requirements.

6.How does Aetrix verify that SIGC11T60SNCX1SA2 is sourced from the original manufacturer or authorized distributors?

All SIGC11T60SNCX1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC11T60SNCX1SA2 meets industry standards.

7.What is the process for return or replacement of SIGC11T60SNCX1SA2?

All SIGC11T60SNCX1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC11T60SNCX1SA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC11T60SNCX1SA2 part is unused and in its original packaging.

Return procedure for SIGC11T60SNCX1SA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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