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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC121T60NR2CX1SA2

Name: SIGC121T60NR2CX1SA2
Brand: Infineon Technologies
SKU: SIGC121T60NR2CX1SA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC121T60NR2CX1SA2

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC121T60NR2CX1SA2.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:7,355

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Product details

Overview

SIGC121T60NR2CX1SA2 from Infineon Technologies is a 600 V, 150 A NPT (Non-Punch-Through) IGBT die in bare-die format, designed for high-power switching in industrial motor drives and inverters. It features a 11 × 11 mm² silicon die with 100 µm thickness, integrated 5–7 Ω gate resistor, positive temperature coefficient for stable paralleling, and 1.7–2.5 V V_CE(sat) at 150 A.

For engineers reviewing the SIGC121T60NR2CX1SA2 datasheet, SIGC121T60NR2CX1SA2 pinout (emitter/gate/collector terminals), SIGC121T60NR2CX1SA2 application in motor drive modules, or SIGC121T60NR2CX1SA2 equivalent bare-die IGBTs, key selection criteria include V_CE(sat), thermal resistance compatibility, gate charge, parallel operation stability, and die bonding requirements for module integration.

Technical Context

This IGBT die implements Non-Punch-Through (NPT) technology with a 100 µm silicon thickness and 102.5 mm² active area, enabling robust short-circuit withstand capability and soft switching behavior. Its positive temperature coefficient of V_CE(sat) ensures current sharing stability when paralleled, and the integrated 5–7 Ω gate resistor reduces external component count and dampens gate oscillation.

Static characteristics are specified at T_j = 25 °C, while switching parameters (t_d(on) = 125 ns, t_r = 30 ns, t_d(off) = 225 ns, t_f = 35 ns) are measured under standardized inductive-load conditions (V_CC = 300 V, I_C = 150 A, V_GE = ±15 V, R_G = 1.5 Ω, T_j = 125 °C), reflecting real-world module-level performance constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage rating; defines use in 400–480 V AC input systems with safety margin.
I_C	150 A DC - Continuous collector current at rated junction temperature; sets base thermal design load for module heatsinking.
V_CE(sat)	1.7–2.5 V @ 150 A - On-state voltage drop directly impacts conduction loss and efficiency in inverter legs.
V_GE(th)	4.5–6.5 V @ 3 mA - Gate threshold voltage range affects noise immunity and required gate drive voltage headroom.
R_Gint	5–7 Ω - Integrated gate resistor simplifies gate driver layout and suppresses ringing without external components.
C_iss	6500 pF - Input capacitance determines gate drive power requirement and influences turn-on speed control.
t_d(off)	225 ns - Turn-off delay time under standard test conditions; critical for dead-time calculation in PWM control.

Pinout & Package

SIGC121T60NR2CX1SA2 is supplied as a bare die in sawn-on-foil format (Q67041-A4684-A001), with no leadframe or molded package. Die dimensions are 11 × 11 mm², thickness 100 µm, and features three metallized terminal areas: emitter (8 × 6.2 × 2.55 mm³ pad), gate (1.51 × 0.8 mm² pad), and collector (backside Ni/Ag metallization).

Pin/Terminal	Circuit Role	Design Meaning
Emitter Pad	Main current return path and reference node for gate drive	8 × 6.2 mm² AlSi1% metallization; requires low-inductance wire bonding or solder attach to emitter tab.
Gate Pad	Control electrode for MOS channel formation	1.51 × 0.8 mm² pad; must be driven with ±15 V, limited by ±20 V absolute max rating.
Collector (Backside)	High-side power terminal and heat-sink interface	Ni/Ag metallization optimized for epoxy or soft-solder die bonding; primary thermal path to heatsink.

Key Features

Feature	Design Value
NPT silicon technology	Enables rugged short-circuit capability (10 µs) and soft, controllable turn-off without tail current overshoot.
Positive V_CE(sat) tempco	Ensures inherent current balancing during parallel operation without external current-sharing resistors.
Integrated gate resistor	5–7 Ω on-die resistance reduces gate loop inductance sensitivity and eliminates discrete gate resistor placement.
Photoimide passivation	Frontside protection layer compatible with standard wire bonding and high-humidity module encapsulation processes.
150 mm wafer fabrication	Supports high-yield production and consistent parametric distribution across die lots for module assembly traceability.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 75–110 kW variable-frequency drives for HVAC and pump systems.

IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT half-bridge modules, operating at 2–8 kHz PWM frequency.

Use Value: Low V_CE(sat) and positive tempco enable efficient thermal management and reliable paralleling for scalable power output.

Use Scenario: Bidirectional DC–AC conversion in online double-conversion UPS systems with battery backup.

IC Role / Device Role / Timing Role: Inverter-stage switching device handling 400 V DC bus and delivering clean 230 V AC output with low THD.

Use Value: NPT structure provides predictable short-circuit behavior essential for fault ride-through during grid transients.

Solar Photovoltaic Inverters

Traction Inverters (Auxiliary)

Use Scenario: Central string inverters converting DC from 600–1000 V PV arrays into grid-synchronized AC.

IC Role / Device Role / Timing Role: Main switching device in NPC or T-type three-level topologies requiring precise V_CE clamping and low EMI.

Use Value: 600 V rating and 6500 pF C_iss support optimized trade-off between switching loss and dv/dt control in multi-level designs.

Use Scenario: Auxiliary power converter in rail traction systems supplying 24/48 V control power from 1500 V DC overhead line.

IC Role / Device Role / Timing Role: Medium-power IGBT in isolated DC–DC converter primary side, switching at 10–20 kHz.

Use Value: 100 µm NPT die thickness and -55…+150 °C operating range ensure reliability under wide ambient and transient thermal stress.

Availability

SIGC121T60NR2CX1SA2 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar photovoltaic inverters, and auxiliary traction converters requiring stable component supply and traceable bare-die sourcing.

Supply support for SIGC121T60NR2CX1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This die belongs to Infineon's High-Voltage IGBT Chip portfolio, developed specifically for integration into press-pack and solder-bonded power modules targeting industrial and energy infrastructure applications.

FAQ

What is the recommended die attach method for SIGC121T60NR2CX1SA2?

Infineon specifies Ni/Ag backside metallization compatible with both electrically conductive epoxy and soft-solder die bonding. For high-reliability modules, reflow-soldering using SnAgCu or PbSn alloys is preferred to ensure low thermal resistance and mechanical integrity under thermal cycling.

Does SIGC121T60NR2CX1SA2 require an external gate resistor?

No - it integrates a 5–7 Ω gate resistor on-die. External gate resistance is optional and used only for fine-tuning switching speed or damping; typical gate driver designs connect directly to the gate pad without additional series resistance.

Can SIGC121T60NR2CX1SA2 be paralleled with other IGBT dies?

Yes - its positive temperature coefficient of V_CE(sat) enables stable current sharing during parallel operation. Successful paralleling requires matched die mounting pressure, uniform thermal interface, and symmetrical gate drive layout to minimize dynamic imbalance.

What is the maximum allowable gate-emitter voltage during operation?

The absolute maximum gate-emitter voltage is ±20 V. Operation above ±15 V increases risk of gate oxide degradation; gate drive circuits must clamp V_GE within this limit during transients and switching events to ensure long-term reliability.

SIGC121T60NR2CX1SA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 150 A

Current - Collector Pulsed (Icm):: 450 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 150A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 125ns/225ns

Test Condition:: 300V, 150A, 1.5Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC121T60NR2CX1SA2 FAQ

1.How can I place an order for SIGC121T60NR2CX1SA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC121T60NR2CX1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC121T60NR2CX1SA2 reliable?

The price and inventory of SIGC121T60NR2CX1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC121T60NR2CX1SA2 is usually 5 days.

3.What payment methods are accepted for SIGC121T60NR2CX1SA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC121T60NR2CX1SA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC121T60NR2CX1SA2?

SIGC121T60NR2CX1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC121T60NR2CX1SA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC121T60NR2CX1SA2?

For technical support, including SIGC121T60NR2CX1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC121T60NR2CX1SA2 requirements.

6.How does Aetrix verify that SIGC121T60NR2CX1SA2 is sourced from the original manufacturer or authorized distributors?

All SIGC121T60NR2CX1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC121T60NR2CX1SA2 meets industry standards.

7.What is the process for return or replacement of SIGC121T60NR2CX1SA2?

All SIGC121T60NR2CX1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC121T60NR2CX1SA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC121T60NR2CX1SA2 part is unused and in its original packaging.

Return procedure for SIGC121T60NR2CX1SA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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