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Infineon Technologies SIGC121T60NR2CX1SA3
- Part No.:
- SIGC121T60NR2CX1SA3
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC121T60NR2CX1SA3.pdf
- Description:
- IGBT 3 CHIP 600V WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:9,601
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Product details
Overview
SIGC121T60NR2CX1SA3 from Infineon Technologies is a 600 V, 150 A NPT (Non-Punch-Through) IGBT bare die optimized for high-power motor drives and industrial inverters. It features a 11 × 11 mm² silicon die with 100 µm thickness, integrated 5–7 Ω gate resistor, positive temperature coefficient for stable paralleling, and 1.7–2.5 V VCE(sat) at 150 A.
For engineers reviewing the SIGC121T60NR2CX1SA3 datasheet, SIGC121T60NR2CX1SA3 pinout (emitter/gate/collector terminals), SIGC121T60NR2CX1SA3 application in motor drive modules, or SIGC121T60NR2CX1SA3 equivalent bare-die IGBTs, this page delivers verified die-level specs, thermal and switching behavior, and module integration guidance without package assumptions.
Technical Context
This IGBT die employs Non-Punch-Through (NPT) technology with a 100 µm wafer thickness and 102.5 mm² active area, enabling robust short-circuit withstand time and low tail current. Its positive temperature coefficient of VCE(sat) ensures inherent current sharing when paralleled, and the integrated 5–7 Ω gate resistor reduces external component count while stabilizing turn-on dynamics.
Tested under Tj = 125 °C, VCC = 300 V, IC = 150 A, and RG = 1.5 Ω, it achieves td(off) = 225 ns and tf = 35 ns - critical for high-frequency PWM operation in 16–20 kHz industrial drives. The 6500 pF Ciss and 600 pF Crss support predictable gate drive design with minimal Miller-induced oscillation risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 600 V - Maximum blocking voltage compatible with 400 V DC bus systems with 50 % safety margin |
| IC | 150 A - Continuous collector current rating at Tj(max), defining thermal design baseline for module layout |
| VCE(sat) | 1.7–2.5 V - Low conduction loss range directly impacts inverter efficiency and heatsink sizing |
| RGint | 5–7 Ω - Integrated gate resistance simplifies gate driver design and dampens ringing without external resistor |
| td(off) | 225 ns - Turn-off delay time measured at 125 °C, key for timing budget in fast-switching inverters |
| Ciss | 6500 pF - Input capacitance determines required gate charge and driver peak current capability |
| Tj Range | −55 to +150 °C - Extended junction temperature range supports operation in harsh industrial environments |
Pinout & Package
SIGC121T60NR2CX1SA3 is supplied as a bare die in sawn-on-foil format (Q67041-A4684-A001), with no leadframe or molded package. Terminal identification follows standard IGBT die layout: top-side emitter pad (8 × 6.2 × 2.55 mm³), top-side gate pad (1.51 × 0.8 mm²), and bottom-side collector metallization (Ni/Ag system).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter Pad | Main current return path | Top-side AlSi1% metallization (3200 nm); requires low-inductance bond wire or clip connection to emitter terminal |
| Gate Pad | Control input node | Top-side 1.51 × 0.8 mm² pad; must be driven with ≤ ±20 V and matched to integrated RGint for optimal switching |
| Collector (Backside) | High-side power output | Bottom-side Ni/Ag metallization (1200 nm); designed for conductive epoxy or soft-solder die attach to DBC substrate |
Key Features
| Feature | Design Value |
|---|---|
| Positive VCE(sat) tempco | Enables stable current sharing in paralleled dies without external current-sharing resistors |
| Integrated gate resistor | 5–7 Ω on-die resistance reduces PCB layout sensitivity and eliminates discrete gate resistor placement |
| NPT silicon structure | 100 µm thickness provides balanced trade-off between breakdown voltage, switching speed, and short-circuit ruggedness |
| Photoimide passivation | Frontside polymer layer protects gate oxide and interconnects during module assembly and thermal cycling |
| Emitter pad geometry | 8 × 6.2 mm² footprint enables uniform current distribution and minimizes bond wire inductance |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: 3-phase inverter stage in 75–110 kW variable-frequency drives for pumps and compressors. IC Role / Device Role / Timing Role: High-current IGBT switch in 6-pack module configuration, operating at 8–16 kHz PWM frequency. Use Value: 150 A current rating and 225 ns td(off) enable compact heatsink design and efficient torque control without overmodulation. | Use Scenario: Bidirectional DC–AC conversion in online double-conversion UPS systems with battery backup. IC Role / Device Role / Timing Role: Inverter-side switching device handling 400 V DC bus and delivering clean 50/60 Hz sine-wave output. Use Value: Low VCE(sat) (1.7–2.5 V) reduces conduction losses during extended battery discharge cycles, extending runtime. |
| Renewable Energy Inverters | Induction Heating Systems |
Use Scenario: Grid-tied solar string inverters with 600 V DC input and transformerless topology. IC Role / Device Role / Timing Role: Main switching element in H-bridge output stage, subject to repetitive surge currents and EMI constraints. Use Value: 600 V VCE rating and 450 A pulsed current capability accommodate PV string voltage fluctuations and transient overloads. | Use Scenario: Resonant half-bridge inverter for 20–50 kW induction furnaces operating at 10–30 kHz. IC Role / Device Role / Timing Role: High-speed switching device managing rapid current reversal in LC tank circuits. Use Value: Fast fall time (35 ns) and low Crss (600 pF) minimize switching losses and improve resonant frequency stability. |
Availability
SIGC121T60NR2CX1SA3 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and renewable energy inverters requiring stable component supply and traceable bare-die sourcing.
Supply support for SIGC121T60NR2CX1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.
This die belongs to Infineon's high-voltage NPT IGBT product line, engineered specifically for reliability and thermal performance in industrial power modules used in traction, drive, and energy conversion systems.
FAQ
What is the recommended die attach method for SIGC121T60NR2CX1SA3?
Infineon specifies conductive epoxy or soft-solder (e.g., SnAgCu) for attaching the backside collector metallization to DBC substrates. The Ni/Ag system is compatible with both methods, but soldering requires strict control of peak temperature (<260 °C) and dwell time to avoid degradation of the photoimide passivation layer.
Does SIGC121T60NR2CX1SA3 require an external gate resistor?
No - the die integrates a 5–7 Ω gate resistor. External gate resistance is optional and only needed for fine-tuning switching speed or damping; typical designs use 0–5 Ω additional resistance depending on layout parasitics and EMI requirements.
Can SIGC121T60NR2CX1SA3 be paralleled with other IGBT dies?
Yes - its positive temperature coefficient of VCE(sat) enables inherently stable current sharing. Successful paralleling requires matched die mounting pressure, symmetric bond wire lengths, and identical thermal interface materials to ensure uniform junction temperature across all devices.
What is the maximum allowable gate-emitter voltage during operation?
The absolute maximum VGE is ±20 V per the datasheet. Operation beyond ±15 V risks irreversible gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) and ensure <480 nA leakage at VGE = 20 V to prevent unintended turn-on during high dv/dt events.
SIGC121T60NR2CX1SA3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 150 A
- Current - Collector Pulsed (Icm):
- 450 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 150A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- 125ns/225ns
- Test Condition:
- 300V, 150A, 1.5Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC121T60NR2CX1SA3 FAQ
1.How can I place an order for SIGC121T60NR2CX1SA3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC121T60NR2CX1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC121T60NR2CX1SA3 reliable?
The price and inventory of SIGC121T60NR2CX1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC121T60NR2CX1SA3 is usually 5 days.
3.What payment methods are accepted for SIGC121T60NR2CX1SA3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC121T60NR2CX1SA3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC121T60NR2CX1SA3?
SIGC121T60NR2CX1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC121T60NR2CX1SA3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC121T60NR2CX1SA3?
For technical support, including SIGC121T60NR2CX1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC121T60NR2CX1SA3 requirements.
6.How does Aetrix verify that SIGC121T60NR2CX1SA3 is sourced from the original manufacturer or authorized distributors?
All SIGC121T60NR2CX1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC121T60NR2CX1SA3 meets industry standards.
7.What is the process for return or replacement of SIGC121T60NR2CX1SA3?
All SIGC121T60NR2CX1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC121T60NR2CX1SA3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC121T60NR2CX1SA3 part is unused and in its original packaging.
Return procedure for SIGC121T60NR2CX1SA3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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