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Infineon Technologies SIGC12T60NCX1SA1
- Part No.:
- SIGC12T60NCX1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC12T60NCX1SA1.pdf
- Description:
- IGBT 3 CHIP 600V WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:3,809
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Product details
Overview
SIGC12T60NCX1SA1 from Infineon Technologies is a 600 V, 10 A NPT (Non-Punch-Through) IGBT bare die optimized for industrial motor drives. It features a 3.5 × 3.5 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, and low VCE(sat) of 2.0 V (typ.) at 15 V gate drive and 10 A collector current.
For engineers reviewing the SIGC12T60NCX1SA1 datasheet, SIGC12T60NCX1SA1 pinout (emitter/gate/collector terminals), SIGC12T60NCX1SA1 application in variable-frequency drives, or SIGC12T60NCX1SA1 equivalent bare-die IGBTs, this page provides verified chip-level specifications, thermal and switching behavior, mechanical layout, and validated alternatives for module integration.
Technical Context
This NPT-technology IGBT die delivers robust short-circuit withstand capability and controlled turn-off characteristics essential for hard-switched inverters. Its 4.5–6.5 V gate threshold voltage ensures noise immunity, while the 1.6–2.5 V VCE(sat) range balances conduction loss and safe operating area at Tj = 125 °C.
Dynamic performance is characterized by td(off) = 110 ns and tf = 25 ns under 300 V, 10 A inductive load conditions with RG = 27 Ω, enabling efficient 8–16 kHz PWM operation in AC drive stages without excessive dv/dt stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 600 V - Maximum blocking voltage for 400 V AC input rectified bus applications |
| IC | 10 A DC - Continuous current rating at Tj = 150 °C with appropriate heatsinking |
| VCE(sat) | 2.0 V (typ.) @ VGE = 15 V, IC = 10 A - Directly determines conduction loss in inverter leg |
| VGE(th) | 5.5 V (typ.) - Ensures reliable turn-on margin above system noise floor |
| td(off) | 110 ns - Sets minimum dead-time requirement to prevent shoot-through |
| Ciss | 450 pF - Influences gate drive power and Miller effect susceptibility |
| Tj range | −55 to +150 °C - Supports operation in sealed industrial enclosures without forced air |
Pinout & Package
Package: Bare die, 3.5 × 3.5 mm², 100 µm thick, sawn on foil, with aluminum emitter metallization (3200 nm), nickel-silver collector metallization (1400 nm), and photoimide passivation. Terminal layout confirmed per Infineon chip drawing L7222-M.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter pad (1.989 × 1.583 mm²) | Low-side current return path | Primary heat and current interface; requires conductive die attach for thermal and electrical integrity |
| Gate pad (1.1 × 0.694 mm²) | Control terminal | Small-area Al bond pad; demands low-inductance gate loop and <20 V absolute max rating |
| Collector metallization (full backside) | High-voltage power input | Backside NiAg layer enables solder or epoxy bonding to DBC substrate; defines primary thermal path |
Key Features
| Feature | Design Value |
|---|---|
| Positive temperature coefficient of VCE(sat) | Enables inherently stable current sharing when paralleling multiple dies in high-current modules |
| NPT device architecture | Provides soft, controllable turn-off with reduced tail current versus PT IGBTs, lowering Eoff |
| 100 µm thin wafer processing | Reduces saturation voltage and improves switching speed while maintaining ruggedness |
| Aluminum emitter / NiAg collector metallization | Ensures compatibility with standard epoxy and soft-solder die-attach processes in power modules |
Applications
| Industrial Motor Drives | UPS Inverters |
|---|---|
Use Scenario: Three-phase 0.75–2.2 kW VFDs driving induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: Main switch in inverter leg; operates at 8–12 kHz PWM with 10 A RMS output current. Use Value: Low VCE(sat) minimizes conduction loss at partial load; positive tempco allows direct paralleling without current-sharing resistors. | Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from battery-backed DC bus. IC Role / Device Role / Timing Role: Output stage IGBT in full-bridge inverter; switches at 10 kHz with 150–300 VDC bus. Use Value: Controlled turn-off and 110 ns td(off) enable precise dead-time management to avoid cross-conduction in high-efficiency designs. |
| Solar String Inverters | Welding Power Supplies |
Use Scenario: Single-phase transformerless string inverters converting 300–600 VDC PV array output. IC Role / Device Role / Timing Role: H-bridge switch handling bidirectional energy flow; rated for 10 A continuous, 30 A pulsed. Use Value: 600 V VCE supports 600 V-class DC link; low Ciss reduces gate drive loss during high-frequency MPPT modulation. | Use Scenario: IGBT-based inverter welders requiring rapid current ramp-up and arc stability. IC Role / Device Role / Timing Role: Primary switching element in resonant or hard-switched DC output stage; handles 10 A average, 30 A peak. Use Value: Robust short-circuit capability (per FS10R06XL4 reference) enables reliable arc ignition and fault tolerance during stick welding. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKB10N60T | 600 V, 10 A, TO-220 packaged IGBT; higher VCE(sat) (2.2 V typ.), larger footprint | Designed for discrete PCB mounting, not module integration | Select only if bare-die assembly capability is unavailable and thermal design permits TO-220 footprint |
| FS10R06W1E3 | 600 V, 10 A, 6-pin EasyPIM module containing matched IGBT/diode pair; includes integrated freewheeling diode | Pre-assembled module with solderable pins; eliminates die attach and wire bonding | Choose when prototyping speed or qualification time outweighs cost and size advantages of custom module design |
Compared with IKB10N60T and FS10R06W1E3, SIGC12T60NCX1SA1 offers superior thermal density and parallel scalability for high-reliability power modules, but requires advanced assembly infrastructure and gate drive optimization for bare-die handling.
Availability
SIGC12T60NCX1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, solar string inverters, and welding power supplies requiring stable component supply and long-term module manufacturing continuity.
Supply support for SIGC12T60NCX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and fabrication facilities.
SIGC12T60NCX1SA1 belongs to Infineon's high-voltage NPT IGBT die portfolio, engineered specifically for integration into compact, high-efficiency power modules targeting industrial drive and renewable energy systems.
FAQ
Is SIGC12T60NCX1SA1 supplied with solderable terminations?
No. This is a bare die product with aluminum emitter and NiAg collector metallization. It requires conductive die attach (epoxy or soft solder) to a substrate and aluminum wire bonding for interconnection. No leadframe or molded package is included.
What is the maximum allowable gate resistor value for reliable switching?
With RG = 27 Ω, measured td(off) = 110 ns and tf = 25 ns. Increasing RG beyond 33 Ω risks exceeding safe operating area limits under inductive loads; gate drive must deliver ±15 V with ≤100 ns rise/fall time and low loop inductance.
Can SIGC12T60NCX1SA1 be used in 400 V three-phase rectified bus applications?
Yes. Its 600 V VCE rating provides 1.5× safety margin over 400 V DC bus peaks, and its 150 °C max junction temperature supports operation in enclosed drive cabinets with passive cooling, provided thermal resistance from die to ambient is ≤1.2 K/W.
Does this die include an integrated freewheeling diode?
No. SIGC12T60NCX1SA1 is a single NPT IGBT die without antiparallel diode. External fast-recovery diodes (e.g., IDH08SG60C) must be co-packaged or mounted adjacent in the module to handle reactive current commutation.
SIGC12T60NCX1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 10 A
- Current - Collector Pulsed (Icm):
- 30 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 10A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- 21ns/110ns
- Test Condition:
- 300V, 10A, 27Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC12T60NCX1SA1 FAQ
1.How can I place an order for SIGC12T60NCX1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC12T60NCX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC12T60NCX1SA1 reliable?
The price and inventory of SIGC12T60NCX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC12T60NCX1SA1 is usually 5 days.
3.What payment methods are accepted for SIGC12T60NCX1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC12T60NCX1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC12T60NCX1SA1?
SIGC12T60NCX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC12T60NCX1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC12T60NCX1SA1?
For technical support, including SIGC12T60NCX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC12T60NCX1SA1 requirements.
6.How does Aetrix verify that SIGC12T60NCX1SA1 is sourced from the original manufacturer or authorized distributors?
All SIGC12T60NCX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC12T60NCX1SA1 meets industry standards.
7.What is the process for return or replacement of SIGC12T60NCX1SA1?
All SIGC12T60NCX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC12T60NCX1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC12T60NCX1SA1 part is unused and in its original packaging.
Return procedure for SIGC12T60NCX1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIGC12T60NCX1SA1 Tags
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