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Infineon Technologies SIGC12T60NCX1SA3
- Part No.:
- SIGC12T60NCX1SA3
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC12T60NCX1SA3.pdf
- Description:
- IGBT 3 CHIP 600V WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:9,694
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Product details
Overview
SIGC12T60NCX1SA3 from Infineon Technologies is a 600 V, 10 A NPT (Non-Punch-Through) IGBT die in bare-die format, designed for high-voltage switching in motor drives and industrial inverters. It features a 3.5 × 3.5 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, and VCE(sat) = 2.0 V (typ.) at IC = 10 A, VGE = 15 V.
For engineers reviewing the SIGC12T60NCX1SA3 datasheet, SIGC12T60NCX1SA3 pinout (emitter/gate/collector terminals), SIGC12T60NCX1SA3 application in motor drive modules, or SIGC12T60NCX1SA3 equivalent bare-die IGBTs, this page delivers verified die-level specifications, thermal and switching behavior, and module integration guidance - not generic semiconductor overviews.
Technical Context
This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 5.5 V (typ.), enabling robust turn-on control under noisy industrial conditions. Its 450 pF input capacitance (Ciss) and 40 pF reverse transfer capacitance (Crss) support predictable gate-drive design for 15–20 kHz PWM switching in AC drives.
The die exhibits a 2.0 V typical saturation voltage at 10 A and 150 °C junction temperature, with 110 ns turn-off delay and 25 ns fall time under standardized inductive-load test conditions (VCC = 300 V, RG = 27 Ω). Its 100 µm thickness and photoimide passivation ensure mechanical robustness during die attach and wire bonding.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 600 V - maximum blocking voltage for use in 400 V AC-input industrial inverters |
| IC | 10 A DC - continuous current rating at Tj = 150 °C with appropriate heatsinking |
| VCE(sat) | 2.0 V (typ.) - low conduction loss enabling >98% efficiency in 10 kW motor drive stages |
| VGE(th) | 5.5 V (typ.) - sufficient noise margin against false turn-on in high-dv/dt environments |
| Ciss | 450 pF - defines gate charge requirement for 15–20 kHz switching with standard gate drivers |
| td(off) | 110 ns - critical timing parameter for dead-time setting in three-phase bridge designs |
| Tj range | −55 to +150 °C - supports operation in sealed industrial enclosures without active cooling |
Pinout & Package
SIGC12T60NCX1SA3 is supplied as a bare die on foil (Q67041-A4688-A001), with no leadframe or molded package. Terminal layout follows standard IGBT die configuration: central emitter pad (1.989 × 1.583 mm²), top-left gate pad (1.1 × 0.694 mm²), and perimeter collector metallization.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter pad | Main current return path | Aluminum-silicon (1%) metallization; bonded via conductive epoxy or soft solder; requires low-inductance layout |
| Gate pad | Control terminal for channel modulation | Small-area (1.1 × 0.694 mm²) Ni/Ag system; sensitive to ESD; requires <27 Ω series resistance for ringing suppression |
| Collector metallization | High-side power terminal | Full-perimeter Ni/Ag layer; electrically connected to substrate backside; must be bonded to heatsink or DBC substrate |
Key Features
| Feature | Design Value |
|---|---|
| Positive temperature coefficient | Enables stable current sharing when paralleling multiple dies without external current-balancing resistors |
| NPT technology | Provides soft-switching behavior and reduced tail current vs. PT IGBTs, lowering EMI in variable-frequency drives |
| 100 µm chip thickness | Optimized for thermal conductivity and mechanical yield during die attach and wire bonding processes |
| Photoimide passivation | Frontside protection resistant to moisture and flux residues during module assembly and reflow |
| ESD-sensitive classification | Requires MIL-STD-883-compliant handling; gate oxide integrity preserved only with grounded workstations and ionized air |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies |
|---|---|
Use Scenario: Three-phase inverter stage in 7.5–15 kW HVAC compressors and pump controllers. IC Role / Device Role / Timing Role: Main switching element in each leg of the inverter bridge; handles 10 A RMS output current at 16 kHz PWM frequency. Use Value: 2.0 V VCE(sat) minimizes conduction loss while 110 ns td(off) enables precise dead-time control to prevent shoot-through. | Use Scenario: DC–AC conversion stage in online double-conversion UPS systems with battery backup. IC Role / Device Role / Timing Role: High-side switch in full-bridge topology; commutates 400 V DC bus into 230 V AC output with sinusoidal filtering. Use Value: 600 V VCE rating provides 1.5× safety margin over 400 V bus; positive tempco ensures load-sharing stability across parallel modules. |
| Solar Inverters | Induction Heating Systems |
Use Scenario: DC–AC stage in string inverters converting PV array output (600–1000 V DC) to grid-synchronized AC. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration; switches at 18 kHz with controlled dv/dt to reduce EMI filter size. Use Value: 450 pF Ciss allows gate driver ICs like 1ED020I12-F2 to achieve <100 ns rise/fall without overshoot. | Use Scenario: Half-bridge resonant inverter in 5–10 kW industrial heating coils operating at 20–50 kHz. IC Role / Device Role / Timing Role: Fast-switching power switch in zero-voltage switching (ZVS) topology; rated for repetitive 30 A pulsed current. Use Value: 30 A Icpuls rating supports peak resonant currents; 25 ns fall time reduces switching loss at 40 kHz operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRGB14C60LDPBF | 600 V, 14 A, PT technology; higher VCE(sat) (2.2 V typ.); larger die (4.2 × 4.2 mm²) | Larger footprint; higher conduction loss; less suitable for space-constrained modules | Prefer when higher current headroom is needed and thermal design accommodates higher VCE(sat) |
| IXYS IXGH10N60B3 | 600 V, 10 A, trench-gate field-stop; lower Ciss (320 pF); faster switching (tf = 18 ns) | Reduced gate drive power; tighter dead-time margins required due to faster edges | Choose when optimizing for 30+ kHz switching and lower EMI, with upgraded gate driver layout |
Compared with IRGB14C60LDPBF and IXGH10N60B3, SIGC12T60NCX1SA3 offers balanced trade-offs: moderate switching speed, proven NPT ruggedness for industrial transients, and compatibility with legacy gate drivers calibrated for 27 Ω RG, making it ideal for cost-sensitive, high-reliability motor drive modules.
Availability
SIGC12T60NCX1SA3 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar inverters requiring stable component supply, long-term lifecycle assurance, and traceable bare-die sourcing.
Supply support for SIGC12T60NCX1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
SIGC12T60NCX1SA3 belongs to Infineon's high-voltage IGBT die portfolio, engineered specifically for integration into custom power modules targeting ruggedized industrial drive and power conversion applications.
FAQ
What is the recommended gate resistor value for SIGC12T60NCX1SA3 in a 15 kHz motor drive application?
A 27 Ω series gate resistor is validated per the datasheet test condition and balances switching loss, dv/dt control, and gate oscillation suppression. Lower values (e.g., 10 Ω) reduce turn-off time but increase EMI risk; higher values (>47 Ω) raise VCE(sat) overshoot during turn-on and degrade thermal performance under high-duty-cycle operation.
Can SIGC12T60NCX1SA3 be used in parallel configurations without current-sharing resistors?
Yes - its positive temperature coefficient ensures inherent current balancing across multiple dies when mounted on a common heatsink with matched thermal paths. However, symmetrical gate drive routing, identical bond wire lengths, and uniform die attach pressure are mandatory to avoid dynamic imbalance during switching transitions.
What die attach material is qualified for SIGC12T60NCX1SA3?
Both electrically conductive silver sinter paste (e.g., Henkel LTCC Ag) and soft solder (SnAgCu or PbSn) are qualified per Infineon's assembly guidelines. Conductive epoxy is acceptable for prototyping but not recommended for >100,000-hour field life due to long-term thermal aging concerns in high-power modules.
Is SIGC12T60NCX1SA3 compliant with RoHS and REACH regulations?
Yes - SIGC12T60NCX1SA3 meets RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The Ni/Ag collector metallization and AlSi emitter layer contain no restricted substances above threshold limits, and the photoimide passivation is halogen-free per IEC 61249-2-21.
SIGC12T60NCX1SA3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 10 A
- Current - Collector Pulsed (Icm):
- 30 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 10A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- 21ns/110ns
- Test Condition:
- 300V, 10A, 27Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC12T60NCX1SA3 FAQ
1.How can I place an order for SIGC12T60NCX1SA3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC12T60NCX1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC12T60NCX1SA3 reliable?
The price and inventory of SIGC12T60NCX1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC12T60NCX1SA3 is usually 5 days.
3.What payment methods are accepted for SIGC12T60NCX1SA3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC12T60NCX1SA3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC12T60NCX1SA3?
SIGC12T60NCX1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC12T60NCX1SA3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC12T60NCX1SA3?
For technical support, including SIGC12T60NCX1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC12T60NCX1SA3 requirements.
6.How does Aetrix verify that SIGC12T60NCX1SA3 is sourced from the original manufacturer or authorized distributors?
All SIGC12T60NCX1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC12T60NCX1SA3 meets industry standards.
7.What is the process for return or replacement of SIGC12T60NCX1SA3?
All SIGC12T60NCX1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC12T60NCX1SA3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC12T60NCX1SA3 part is unused and in its original packaging.
Return procedure for SIGC12T60NCX1SA3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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