My Inquiry
My Account
Infineon Technologies SIGC12T60NCX1SA4
- Part No.:
- SIGC12T60NCX1SA4
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC12T60NCX1SA4.pdf
- Description:
- IGBT 3 CHIP 600V WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:6,825
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIGC12T60NCX1SA4 from Infineon Technologies is a 600 V, 10 A NPT (Non-Punch-Through) IGBT bare die optimized for motor drives and industrial inverters. It features a 3.5 × 3.5 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, and VCE(sat) = 2.0 V (typ.) at IC = 10 A and VGE = 15 V. Used in compact IGBT modules for HVAC and servo drive applications.
For engineers reviewing the SIGC12T60NCX1SA4 datasheet, SIGC12T60NCX1SA4 pinout, SIGC12T60NCX1SA4 application, or SIGC12T60NCX1SA4 equivalent, key selection criteria include VCE(sat), switching times (td(off) = 110 ns), thermal resistance constraints, gate drive compatibility (±20 V), and die bonding requirements for module integration.
Technical Context
This IGBT die employs Non-Punch-Through (NPT) technology with a 100 µm thick silicon substrate and photoimide passivation. Its emitter metallization uses 3200 nm Al-Si (1%), collector uses 1400 nm Ni-Ag, enabling reliable epoxy or soft-solder die attachment.
Static characteristics are specified at Tj = 25 °C: V(BR)CES ≥ 600 V, VGE(th) = 4.5–6.5 V, and ICES ≤ 0.8 µA at VCE = 600 V. Dynamic parameters include Ciss = 450 pF and Crss = 40 pF at VCE = 25 V, f = 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 600 V - Maximum blocking voltage for 600 V DC-link industrial inverters |
| IC | 10 A - Continuous collector current rating at Tjmax, defines thermal design margin |
| VCE(sat) | 2.0 V (typ.) - Conduction loss contributor; impacts efficiency and heatsink sizing |
| td(off) | 110 ns - Turn-off delay time at Tj = 125 °C; critical for PWM frequency and EMI control |
| Ciss | 450 pF - Input capacitance affecting gate drive power and Miller effect sensitivity |
| Tj range | −55 to +150 °C - Junction temperature operating window for harsh-environment module integration |
| Die size | 3.5 × 3.5 mm² - Physical footprint constraining module layout and thermal interface design |
Pinout & Package
SIGC12T60NCX1SA4 is supplied as a bare die (no leadframe or molded package). The die has three terminals: Emitter (E), Collector (C), and Gate (G), arranged in a planar layout with aluminum emitter and gate pads sized 1.989 × 1.583 mm² and 1.1 × 0.694 mm² respectively. Bonding requires conductive glue or solder; wire bonding uses Al wires ≤500 µm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter (E) | Low-side current return path | Al-Si (1%) metallized pad; primary heat and current path; requires low-impedance die attach |
| Collector (C) | High-voltage power input terminal | Ni-Ag metallized surface; connects to module baseplate; defines voltage isolation boundary |
| Gate (G) | Control electrode for channel modulation | Small-area Al pad (1.1 × 0.694 mm²); sensitive to ESD; requires controlled gate resistor (RG = 27 Ω typical) |
Key Features
| Feature | Design Value |
|---|---|
| Positive temperature coefficient | Enables stable current sharing in paralleled IGBT configurations without external current-sharing resistors |
| NPT technology | Provides rugged short-circuit capability and predictable safe operating area (SOA) up to 10 µs |
| 100 µm thin die | Reduces carrier storage time, improving switching speed and reducing tail current losses |
| Photoimide passivation | Ensures high reliability under humidity and thermal cycling in encapsulated module environments |
| ESD-sensitive handling | Requires MIL-STD-883 compliant ESD controls during module assembly to prevent gate oxide damage |
Applications
| Industrial Motor Drives | HVAC Inverter Systems |
|---|---|
Use Scenario: Three-phase inverter stage in 3–7.5 kW variable-frequency drives for pumps and compressors. IC Role / Device Role / Timing Role: Main switching device in the inverter leg; operates at 4–16 kHz PWM with hard-switched turn-off. Use Value: Low VCE(sat) reduces conduction loss; positive tempco enables scalable power output via parallel dies. | Use Scenario: Compact outdoor unit inverter for residential air conditioning with space-constrained module design. IC Role / Device Role / Timing Role: High-side switch in half-bridge topology; subjected to repetitive dv/dt stress and thermal cycling. Use Value: 600 V rating supports 400 V DC-link with margin; 150 °C max Tj allows high-power density packaging. |
| Servo Drive Power Stages | Welding Equipment Inverters |
Use Scenario: High-dynamic-response servo amplifier with fast current-loop bandwidth and regenerative braking. IC Role / Device Role / Timing Role: Low-inductance switching element; gate-driven with tight timing control for precise current regulation. Use Value: 110 ns td(off) supports >20 kHz switching; small die size minimizes stray inductance in module interconnects. | Use Scenario: IGBT-based inverter in 15–30 kW arc welding power supplies requiring robust short-circuit tolerance. IC Role / Device Role / Timing Role: Primary power switch in resonant or hard-switched topologies; exposed to high peak currents and voltage transients. Use Value: NPT structure provides defined 10 µs short-circuit SOA; 600 V rating accommodates line-voltage surges up to 1.2× nominal. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN120N60B3 | 600 V, 120 A discrete TO-247 packaged IGBT; higher current rating but larger footprint and different thermal path | Designed for PCB-mount discrete use, not bare-die module integration | Select when board-level integration is required instead of custom module assembly |
| STMicroelectronics STGP10NC60KD | 600 V, 10 A trench-gate field-stop IGBT in TO-220FP package; lower VCE(sat) (~1.6 V) but no positive tempco | Targeted at cost-sensitive consumer inverters; lacks parallel stability assurance | Prefer for single-die, low-volume applications where paralleling is not needed |
Compared with IXGN120N60B3 and STGP10NC60KD, SIGC12T60NCX1SA4 uniquely supports high-reliability, multi-die module architectures through its positive temperature coefficient, bare-die form factor, and NPT ruggedness-making it irreplaceable for industrial-grade power modules.
Availability
SIGC12T60NCX1SA4 is available at Aetrix Electronics and suitable for industrial motor drives, HVAC inverter systems, and servo drive power stages requiring stable component supply and long-term module production continuity.
Supply support for SIGC12T60NCX1SA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.
SIGC12T60NCX1SA4 belongs to Infineon's high-voltage IGBT die portfolio designed specifically for integration into custom and standard industrial power modules targeting 600 V-class motor control and energy conversion systems.
FAQ
Is SIGC12T60NCX1SA4 a packaged device or bare die?
SIGC12T60NCX1SA4 is a bare silicon die-no package, leads, or molding. It measures 3.5 × 3.5 mm² with aluminum emitter/gate pads and nickel-silver collector metallization. Customers must integrate it into custom modules using conductive die attach and aluminum wire bonding per Infineon's mechanical specifications.
What gate drive voltage is recommended for reliable operation?
Infineon specifies ±20 V absolute maximum gate-emitter voltage. For robust switching, a +15 V turn-on and −15 V turn-off gate drive is recommended. The gate threshold voltage VGE(th) ranges from 4.5 V to 6.5 V, requiring sufficient overdrive to ensure full saturation while avoiding overshoot-induced latch-up.
Can this die be paralleled with identical units?
Yes-SIGC12T60NCX1SA4 exhibits a positive temperature coefficient for VCE(sat), enabling inherent current balancing during parallel operation. Successful paralleling requires matched die placement, symmetric thermal paths, and low-inductance gate routing with individual 27 Ω gate resistors to suppress oscillation.
What are the storage requirements before module assembly?
Store SIGC12T60NCX1SA4 in its original nitrogen-purged container at ≤23 °C and <6 months duration. Exposure to ambient humidity or temperatures above 30 °C risks degradation of photoimide passivation and Al metallization adhesion-both critical for long-term module reliability.
SIGC12T60NCX1SA4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 10 A
- Current - Collector Pulsed (Icm):
- 30 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 10A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- 21ns/110ns
- Test Condition:
- 300V, 10A, 27Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC12T60NCX1SA4 FAQ
1.How can I place an order for SIGC12T60NCX1SA4 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC12T60NCX1SA4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC12T60NCX1SA4 reliable?
The price and inventory of SIGC12T60NCX1SA4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC12T60NCX1SA4 is usually 5 days.
3.What payment methods are accepted for SIGC12T60NCX1SA4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC12T60NCX1SA4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC12T60NCX1SA4?
SIGC12T60NCX1SA4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC12T60NCX1SA4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC12T60NCX1SA4?
For technical support, including SIGC12T60NCX1SA4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC12T60NCX1SA4 requirements.
6.How does Aetrix verify that SIGC12T60NCX1SA4 is sourced from the original manufacturer or authorized distributors?
All SIGC12T60NCX1SA4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC12T60NCX1SA4 meets industry standards.
7.What is the process for return or replacement of SIGC12T60NCX1SA4?
All SIGC12T60NCX1SA4 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC12T60NCX1SA4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC12T60NCX1SA4 part is unused and in its original packaging.
Return procedure for SIGC12T60NCX1SA4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIGC12T60NCX1SA4 Tags
;;2.jpg)
-
STGD3NB60SDT4
STMicroelectronics
-
HGTD1N120BNS9A
onsemi
-
STGF7NB60SL
STMicroelectronics
-
FGD5T120SH
onsemi
-
STGB3NC120HDT4
STMicroelectronics
-
IKP20N60TXKSA1
Infineon Technologies
-
STGW30H60DFB
STMicroelectronics
-
STGB30M65DF2
STMicroelectronics
-
IKB20N60TATMA1
Infineon Technologies
-
STGB30V60DF
STMicroelectronics
-
IKW30N60DTPXKSA1
Infineon Technologies
-
ISL9V3040P3
onsemi
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
