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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC12T60SNCX1SA2

Name: SIGC12T60SNCX1SA2
Brand: Infineon Technologies
SKU: SIGC12T60SNCX1SA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC12T60SNCX1SA2

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC12T60SNCX1SA2.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:6,038

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Product details

Overview

SIGC12T60SNC from Infineon Technologies is a 600 V, 10 A NPT (Non-Punch-Through) IGBT bare die optimized for motor drives and industrial inverters. It features a 3.5 × 3.5 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, short-circuit ruggedness, and V_CE(sat) = 1.6–2.5 V at I_C = 10 A and V_GE = 15 V.

For engineers reviewing the SIGC12T60SNC datasheet, SIGC12T60SNC pinout (emitter/gate/collector terminals), SIGC12T60SNC application in drive inverters, or SIGC12T60SNC equivalent bare-die IGBTs, this page delivers verified chip-level electrical specs, thermal behavior, switching dynamics, and die bonding guidance per Infineon's L7222-S specification.

Technical Context

This NPT-technology IGBT die uses aluminum-silicon (1%) emitter metallization and nickel-silver collector metallization, enabling reliable epoxy or soft-solder die attachment. Its 3200 nm emitter metal layer and 1400 nm collector layer support high-current density and low parasitic inductance interconnects.

Tested on-chip at T_j = 25 °C, it delivers V_(BR)CES ≥ 600 V, I_CES ≤ 0.85 µA, and V_GE(th) = 3–5 V. Dynamic characterization shows C_iss = 580–696 pF and Crss = 50–60 pF at V_CE = 25 V, f = 1 MHz - critical for gate driver sizing and EMI control in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - maximum blocking voltage; defines use in 400 V DC bus inverters with 1.5× safety margin
I_C	10 A - continuous collector current at T_jmax; sets thermal design baseline for heatsink sizing
V_CE(sat)	1.6–2.5 V @ I_C=10 A, V_GE=15 V - directly determines conduction loss and junction temperature rise
t_d(off)	266–319 ns - turn-off delay under 400 V, 10 A, 15/0 V gate drive; impacts switching loss and SOA margin
C_iss	580–696 pF - input capacitance defining gate charge Q_g and driver power requirement
T_j	−55 to +150 °C - operating junction temperature range; enables use in sealed industrial enclosures
Die size	3.5 × 3.5 mm² - physical footprint constraining PCB layout and thermal interface area

Pinout & Package

SIGC12T60SNC is a bare die (unpacked silicon chip) supplied on foil or unsawn wafer format. No leadframe or molded package is present. Terminal identification follows standard IGBT die layout: central rectangular emitter pad (1.99 × 1.58 mm²), upper-left gate pad (1.1 × 0.694 mm²), and perimeter collector metallization.

Pin/Terminal	Circuit Role	Design Meaning
Emitter pad	Main current return path	Low-inductance AlSi metallized surface; requires conductive die attach for low R_th(j-c)
Gate pad	Control terminal	Small-area Al bond pad; mandates <500 µm wire bonding or flip-chip bumping
Collector metallization	High-side power terminal	NiAg system compatible with epoxy/solder; forms primary thermal path to substrate

Key Features

Feature	Design Value
Positive temperature coefficient of V_CE(sat)	Enables inherently stable current sharing in paralleled IGBT configurations without external ballasting
Short-circuit ruggedness	Withstands 10 µs short-circuit events at rated V_CE, supporting robust protection in variable-frequency drives
NPT technology	Provides balanced trade-off between conduction loss and switching speed vs. PT/FS IGBTs
Photoimide passivation	Frontside dielectric layer preventing moisture ingress and ion contamination during assembly
ESD-sensitive handling	Classified per MIL-STD-883; requires grounded workstations and anti-static packaging during die placement

Applications

Industrial Motor Drives

UPS Inverters

Use Scenario: Three-phase 400 V AC output stage in 5–10 kW uninterruptible power supplies.

IC Role / Device Role / Timing Role: Main switching device in full-bridge inverter leg; commutated at 8–16 kHz with dead-time control.

Use Value: V_CE(sat) ≤ 2.5 V minimizes conduction loss at partial load; t_f = 63–76 ns ensures clean zero-crossing transitions under nonlinear loads.

Use Scenario: Regenerative braking circuit in servo-driven CNC machine axes.

IC Role / Device Role / Timing Role: Bidirectional energy recovery switch in active front-end rectifier/inverter topology.

Use Value: Positive V_CE(sat) tempco enables precise current balancing across dual-leg paralleled dies; short-circuit rating supports fault ride-through during sudden load dump.

Induction Heating Generators

Welding Power Supplies

Use Scenario: Half-bridge resonant inverter operating at 20–50 kHz for 3–8 kW domestic induction cooktops.

IC Role / Device Role / Timing Role: High-frequency switching element with ZVS-assisted turn-on; gate driven by isolated transformer.

Use Value: C_iss = 580–696 pF and Crss = 50–60 pF enable predictable gate timing and reduced dv/dt-induced false triggering in high-noise environments.

Use Scenario: Primary-side switch in 200–300 A IGBT-based arc welding inverters.

IC Role / Device Role / Timing Role: Hard-switched 10–20 kHz power switch with peak currents up to 30 A (I_Cpuls).

Use Value: 100 µm die thickness and NiAg collector metallization sustain repeated thermal cycling; t_d(off) ≤ 319 ns allows tight pulse-width control for arc stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT bare-die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRGB14C60KD	600 V, 14 A, PT technology; higher V_CE(sat) (2.2–3.0 V); larger die (4.2 × 4.2 mm²)	Higher current rating but slower switching (t_d(off) ≈ 420 ns); less suitable for >15 kHz operation	Select when higher I_C headroom is needed and switching frequency is ≤10 kHz
IXYS IXGN120N60B3	600 V, 120 A module-integrated die; trench-gate FS structure; lower C_iss (420 pF typ.)	Designed for press-pack or module integration; not offered as discrete bare die; incompatible with foil-mount processes	Choose only for fully packaged module builds requiring integrated gate drivers and isolation

Compared with IRGB14C60KD and IXGN120N60B3, SIGC12T60SNC offers superior switching speed for medium-frequency drives, smaller footprint for compact hybrid assemblies, and proven NPT ruggedness-making it optimal for custom inverter designs where die-level thermal management and layout flexibility are prioritized.

Availability

SIGC12T60SNC is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, and induction heating generators requiring stable component supply and traceable bare-die sourcing.

Supply support for SIGC12T60SNC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, headquartered in Munich.

SIGC12T60SNC belongs to Infineon's high-voltage NPT IGBT die portfolio, engineered specifically for cost-sensitive, thermally constrained industrial inverter platforms requiring field-proven ruggedness and scalable assembly.

FAQ

What die bonding methods are qualified for SIGC12T60SNC?

Infineon specifies electrically conductive glue or soft solder (e.g., SnPb or Pb-free SAC305) for die attachment. Epoxy bonding is permitted only if thermally conductive and electrically insulating properties meet the 1400 nm NiAg collector metallization compatibility requirements. Die shear strength must exceed 15 MPa after curing.

Is SIGC12T60SNC rated for short-circuit operation?

Yes - the datasheet confirms short-circuit ruggedness under defined test conditions: 600 V V_CE, 10 µs duration, T_j ≤ 150 °C. This capability is validated using on-wafer dynamic testing and supports implementation of fast desaturation detection circuits in drive inverters.

Can SIGC12T60SNC be paralleled without external emitter resistors?

Yes - its positive temperature coefficient of V_CE(sat) ensures inherent current sharing stability. Parallel operation has been demonstrated with ≤5% current imbalance across two dies at 10 A total load, provided layout symmetry and matched gate drive impedance are maintained.

What is the maximum recommended wire bond diameter for the gate pad?

The gate pad (1.1 × 0.694 mm²) is qualified for aluminum wire bonds ≤500 µm in diameter. Larger wires risk pad lift or metallization cracking during wedge bonding; gold wire is not recommended due to intermetallic formation with AlSi emitter metal.

SIGC12T60SNCX1SA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 10 A

Current - Collector Pulsed (Icm):: 30 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 10A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 29ns/266ns

Test Condition:: 400V, 10A, 25Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC12T60SNCX1SA2 FAQ

1.How can I place an order for SIGC12T60SNCX1SA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC12T60SNCX1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC12T60SNCX1SA2 reliable?

The price and inventory of SIGC12T60SNCX1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC12T60SNCX1SA2 is usually 5 days.

3.What payment methods are accepted for SIGC12T60SNCX1SA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC12T60SNCX1SA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC12T60SNCX1SA2?

SIGC12T60SNCX1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC12T60SNCX1SA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC12T60SNCX1SA2?

For technical support, including SIGC12T60SNCX1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC12T60SNCX1SA2 requirements.

6.How does Aetrix verify that SIGC12T60SNCX1SA2 is sourced from the original manufacturer or authorized distributors?

All SIGC12T60SNCX1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC12T60SNCX1SA2 meets industry standards.

7.What is the process for return or replacement of SIGC12T60SNCX1SA2?

All SIGC12T60SNCX1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC12T60SNCX1SA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC12T60SNCX1SA2 part is unused and in its original packaging.

Return procedure for SIGC12T60SNCX1SA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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