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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC12T60SNCX1SA3

Name: SIGC12T60SNCX1SA3
Brand: Infineon Technologies
SKU: SIGC12T60SNCX1SA3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC12T60SNCX1SA3

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC12T60SNCX1SA3.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIGC12T60SNC from Infineon Technologies is a 600 V, 10 A NPT (Non-Punch-Through) IGBT bare die optimized for motor drives and industrial inverters. It features a 3.5 × 3.5 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable paralleling, short-circuit ruggedness, and V_CE(sat) = 1.6–2.5 V at I_C = 10 A and V_GE = 15 V.

For engineers reviewing the SIGC12T60SNC datasheet, SIGC12T60SNC pinout (emitter/gate/collector terminals), SIGC12T60SNC application in motor drive modules, or SIGC12T60SNC equivalent bare-die IGBTs, this page delivers verified die-level specifications, thermal and switching behavior, packaging options (sawn/unsawn on foil), and direct substitution guidance against SGP10N60-based modules.

Technical Context

This NPT IGBT die uses trench-gate field-stop architecture to achieve balanced conduction and switching losses. Its 100 µm thickness and 8.7 mm² active area support high blocking voltage (600 V) while maintaining low V_CE(sat) and robust short-circuit withstand time (t_SC ≥ 10 µs).

Dynamic performance is characterized at V_CC = 400 V, I_C = 10 A, T_j = 150 °C, with t_d(off) = 266–319 ns and t_f = 63–76 ns - 40% faster turn-off than Standard IGBT 2 under comparable conditions, enabled by reduced C_oss (70–84 pF) and Crss (50–60 pF).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum DC collector-emitter blocking voltage; defines use in 400 V bus systems with 50% safety margin.
I_C	10 A - Continuous DC collector current at T_jmax; requires heatsinking to maintain junction temp ≤150 °C.
V_CE(sat)	1.6–2.5 V @ I_C=10 A, V_GE=15 V - Directly determines conduction loss and thermal load in hard-switched inverters.
t_d(off)	266–319 ns - Critical for PWM frequency selection; enables operation up to ~20 kHz in 3-phase motor drives.
C_oss	70–84 pF - Output capacitance impacts snubber design and zero-voltage switching feasibility.
T_j Range	−55 to +150 °C - Specifies operational envelope for industrial environments and automotive under-hood proximity.

Pinout & Package

Package: Bare die (3.5 × 3.5 mm², 100 µm thick), available in sawn-on-foil (Q67041-A4664-A001) or unsawn (Q67041-A4664-A002) configurations. Not housed in TO-220 or other leaded packages - intended for hybrid module assembly or custom substrate bonding.

Pin/Terminal	Circuit Role	Design Meaning
Emitter (E)	Low-side current return path	Aluminum metallization (3200 nm AlSi1%), bonded via conductive epoxy or soft solder; requires low-inductance layout.
Gate (G)	Control terminal for channel modulation	1.1 × 0.694 mm² pad; ±20 V max rating; gate drive must limit dV/dt to prevent false turn-on.
Collector (C)	High-voltage power input node	NiAg metallization (1400 nm); electrically connected to substrate backside; requires thermal interface to heatsink.

Key Features

Feature	Design Value
Positive temperature coefficient of V_CE(sat)	Enables inherent current sharing in parallel IGBT configurations without external emitter resistors.
Short-circuit ruggedness	Withstands 10 µs minimum at rated V_CE and I_C, enabling reliable overcurrent protection in drive inverters.
Low Crss (50–60 pF)	Reduces Miller-induced gate oscillation risk and improves gate drive stability during high dV/dt transitions.
Photoimide passivation	Frontside dielectric layer prevents moisture ingress and metal migration during high-temp reflow or wire bonding.

Applications

Industrial Motor Drives

UPS Inverters

Use Scenario: Three-phase 400 V AC variable-frequency drives for HVAC compressors and conveyor belts.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 10 A RMS output current with 16 kHz PWM switching.

Use Value: Low V_CE(sat) reduces conduction loss by >15% vs. older NPT dies; positive tempco ensures stable current sharing across parallel legs.

Use Scenario: Online double-conversion UPS with 6 kVA output and battery backup.

IC Role / Device Role / Timing Role: High-efficiency inverter stage switch; operates in hard-switched mode with fast turn-off to minimize dead-time distortion.

Use Value: 40% faster t_d(off) vs. Standard IGBT 2 allows higher switching frequency without excessive loss penalty, improving THD and filter size.

Solar Microinverters

Induction Heating Modules

Use Scenario: Single-phase grid-tied microinverter for residential PV panels (250–350 W per unit).

IC Role / Device Role / Timing Role: DC–AC H-bridge switch; subjected to repetitive 100% I_C pulses during MPPT transients.

Use Value: Short-circuit proof design tolerates 10 µs fault events during islanding detection, supporting UL 1741 SA compliance.

Use Scenario: 20 kW resonant induction heater for metal forging with 20–50 kHz operating range.

IC Role / Device Role / Timing Role: Half-bridge switch in series-resonant topology; conducts high di/dt currents with minimal tail current.

Use Value: Optimized C_oss/Crss ratio minimizes capacitive turn-on loss and improves ZVS margin at high frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SGP10N60	Same die (SIGC12T60SNC) packaged in TO-220; includes internal gate resistor and standardized leadframe.	Used in discrete PCB-mount designs; not suitable for module integration or custom thermal paths.	Select when needing plug-in replacement in legacy TO-220 layouts without redesigning substrate or bond pads.
IKB10N60T	600 V, 10 A TRENCHSTOP™ IGBT die; lower V_CE(sat) (1.45 V typ), but no short-circuit rating specified.	Targeted at consumer-grade inverters where fault tolerance is managed externally; lacks documented t_SC spec.	Choose for cost-sensitive, non-safety-critical applications where peak efficiency outweighs ruggedness requirements.

Compared with SGP10N60, SIGC12T60SNC offers full die-level control over thermal interface and layout parasitics; versus IKB10N60T, it trades slightly higher V_CE(sat) for guaranteed short-circuit capability - critical for industrial drive reliability.

Availability

SIGC12T60SNC is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, solar microinverters, and induction heating modules requiring stable component supply and long-term die-level sourcing.

Supply support for SIGC12T60SNC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and wafer fabrication facilities.

SIGC12T60SNC belongs to Infineon's high-reliability NPT IGBT die portfolio, designed specifically for module integrators building rugged, high-power-density industrial inverters and motor drives.

FAQ

Is SIGC12T60SNC a packaged device or bare die?

SIGC12T60SNC is a bare silicon die - not encapsulated. It measures 3.5 × 3.5 mm² with 100 µm thickness and is supplied either sawn on foil (Q67041-A4664-A001) or unsawn (Q67041-A4664-A002). It requires die attach, wire bonding, and external packaging by the end user or module assembler.

What is the maximum allowable gate-emitter voltage?

The absolute maximum gate-emitter voltage is ±20 V, as specified in the Infineon data sheet. Exceeding this rating risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) and limit peak transient voltage during switching transitions.

Does SIGC12T60SNC support parallel operation?

Yes - its positive temperature coefficient of V_CE(sat) enables stable current sharing between parallel dies without external emitter resistors. However, matched layout symmetry, identical thermal paths, and gate drive impedance balancing remain essential for uniform dynamic current distribution.

How does SIGC12T60SNC differ from SGP10N60?

SGP10N60 is the packaged version of the same die: SIGC12T60SNC mounted in a TO-220 housing with integrated gate resistor and standard leads. The bare die offers superior thermal performance and layout flexibility but requires full module-level assembly, whereas SGP10N60 supports direct PCB mounting.

SIGC12T60SNCX1SA3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 10 A

Current - Collector Pulsed (Icm):: 30 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 10A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 29ns/266ns

Test Condition:: 400V, 10A, 25Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC12T60SNCX1SA3 FAQ

1.How can I place an order for SIGC12T60SNCX1SA3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC12T60SNCX1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC12T60SNCX1SA3 reliable?

The price and inventory of SIGC12T60SNCX1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC12T60SNCX1SA3 is usually 5 days.

3.What payment methods are accepted for SIGC12T60SNCX1SA3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC12T60SNCX1SA3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC12T60SNCX1SA3?

SIGC12T60SNCX1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC12T60SNCX1SA3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC12T60SNCX1SA3?

For technical support, including SIGC12T60SNCX1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC12T60SNCX1SA3 requirements.

6.How does Aetrix verify that SIGC12T60SNCX1SA3 is sourced from the original manufacturer or authorized distributors?

All SIGC12T60SNCX1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC12T60SNCX1SA3 meets industry standards.

7.What is the process for return or replacement of SIGC12T60SNCX1SA3?

All SIGC12T60SNCX1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC12T60SNCX1SA3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC12T60SNCX1SA3 part is unused and in its original packaging.

Return procedure for SIGC12T60SNCX1SA3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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