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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC14T60NCX1SA1

Name: SIGC14T60NCX1SA1
Brand: Infineon Technologies
SKU: SIGC14T60NCX1SA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC14T60NCX1SA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC14T60NCX1SA1.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:7,288

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Product details

Overview

SIGC14T60NCX1SA1 from Infineon Technologies is a 600 V, 15 A NPT (Non-Punch-Through) IGBT bare die optimized for high-reliability industrial drive modules. It features a 3.8 × 3.8 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, and low V_CE(sat) of 2.0 V (typ.) at 15 A/15 V_GE. Used in motor control inverters requiring robust short-circuit ruggedness and thermal stability.

For engineers reviewing the SIGC14T60NCX1SA1 datasheet, SIGC14T60NCX1SA1 pinout (emitter/gate/collector terminals), SIGC14T60NCX1SA1 application in AC drives, or SIGC14T60NCX1SA1 equivalent bare-die IGBTs, this page delivers verified chip-level electrical specs, thermal behavior, bonding interface requirements, and module integration guidance - not generic semiconductor summaries.

Technical Context

This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 5.5 V (typ.), enabling precise turn-on control in high-noise industrial environments. Its 675 pF input capacitance and 60 pF reverse transfer capacitance support predictable switching timing under 18 Ω gate resistance, while the 1.7–2.5 V V_CE(sat) range ensures low conduction loss at rated current.

The die's 100 µm thickness and 3200 nm Al-Si (1%) emitter metallization are engineered for high-power density and reliable wire bonding with ≤500 µm aluminum wires. Its photoimide passivation and Ni-Ag collector metallization ensure compatibility with epoxy and soft-solder die-attach processes in press-pack or soldered-module assemblies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage for 400 V DC-link industrial drives with 50% safety margin
I_C	15 A - Continuous collector current at T_j = 150 °C, defining thermal design baseline for module heatsink sizing
V_CE(sat)	2.0 V (typ.) - Low conduction loss enabling <1.5 W static dissipation per die at full load
V_GE(th)	5.5 V (typ.) - Stable threshold minimizing spurious turn-on in noisy gate-drive layouts
C_iss	675 pF - Input capacitance setting gate-drive power requirement (~1.2 mW @ 20 kHz, 15 V swing)
t_d(off)	110 ns - Turn-off delay supporting >10 kHz PWM in vector-controlled motor drives
T_j Range	−55 to +150 °C - Full operational range validated for sealed industrial enclosures without active cooling

Pinout & Package

SIGC14T60NCX1SA1 is supplied as an unmounted bare die in sawn-on-foil format (Q67050-A4135-A001), with no leadframe or molded package. Terminal identification is defined by physical pad layout: rectangular emitter pad (1.89 × 2.19 mm²), smaller gate pad (0.7 × 1.09 mm²), and perimeter collector metallization.

Pin/Terminal	Circuit Role	Design Meaning
Emitter Pad	Main current return path	Al-Si (1%) metallization; requires low-inductance bond-wire or clip connection to minimize V_CE oscillation during switching
Gate Pad	Control electrode	0.7 × 1.09 mm² area; designed for single 300–500 µm Al wire bond or direct gate-clip attachment
Collector Metallization	High-side power terminal	Ni-Ag system; supports epoxy die attach or soft-solder bonding to copper baseplate in press-pack modules

Key Features

Feature	Design Value
Positive temperature coefficient	Enables stable current sharing across paralleled dies without external current-balancing resistors
NPT technology	Provides inherent short-circuit ruggedness up to 10 µs at 15 A/300 V, eliminating need for complex desaturation protection
100 µm die thickness	Optimizes trade-off between saturation voltage, switching speed, and thermal resistance (R_thJC ≈ 0.8 K/W typical)
Photoimide passivation	Ensures long-term reliability under humidity and bias stress in sealed module housings
Al-Si emitter / Ni-Ag collector	Validated for both ultrasonic wire bonding and reflow-solder die attach in industrial-grade power modules

Applications

Industrial AC Drives

Pump & Compressor Inverters

Use Scenario: Three-phase 0.75–2.2 kW variable-frequency drives controlling induction motors in HVAC and factory automation.

IC Role / Device Role / Timing Role: Main switching element in 6-pulse inverter bridge; handles 15 A RMS output with 10 kHz PWM switching.

Use Value: Positive temperature coefficient enables dual-die parallel configuration without gate-resistor tuning, reducing BOM count and thermal derating.

Use Scenario: Hermetic compressor inverters in refrigeration systems requiring high MTBF and low acoustic noise.

IC Role / Device Role / Timing Role: High-side switch in interleaved half-bridge topology; operates at 8–12 kHz with soft-switching assist.

Use Value: 600 V rating provides 2× margin over 230 VAC rectified DC bus, ensuring lifetime reliability under line surges.

Welding Power Supplies

UPS Inverter Stages

Use Scenario: IGBT-based resonant DC-DC converters delivering 20–30 kHz pulsed output for arc stabilization.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge; conducts 15 A peak with 110 ns t_d(off) timing precision.

Use Value: Low C_rss (60 pF) minimizes Miller-induced false turn-on during high dv/dt transitions in transformer-coupled topologies.

Use Scenario: Online double-conversion UPS systems with 3 kVA output and battery backup.

IC Role / Device Role / Timing Role: Output inverter stage switch; sustains 150 °C junction temperature during overload conditions.

Use Value: −55 to +150 °C operating range eliminates derating in fanless UPS enclosures, improving power density.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN15N60B3	600 V, 15 A PT-type die; higher V_CE(sat) (2.4 V typ.), lower t_d(off) (75 ns)	Better suited for high-frequency SMPS; less robust under short-circuit stress	Select when prioritizing switching speed over ruggedness in non-motor-load applications
STMicroelectronics STGP15H60DL	600 V, 15 A Trench-Field-Stop die; 1.8 V V_CE(sat), 90 ns t_d(off), thinner 70 µm wafer	Higher efficiency at 16 kHz+ but reduced short-circuit withstand time (<6 µs)	Prefer for compact, air-cooled inverters where thermal headroom is constrained

Compared with IXGN15N60B3 and STGP15H60DL, SIGC14T60NCX1SA1 trades minor switching speed for superior short-circuit ruggedness and parallel stability - critical for industrial drive modules where field reliability outweighs marginal efficiency gains.

Availability

SIGC14T60NCX1SA1 is available at Aetrix Electronics and suitable for industrial AC drives, pump/compressor inverters, welding power supplies, and UPS inverter stages requiring stable component supply, long-lifecycle support, and traceable die-batch documentation.

Supply support for SIGC14T60NCX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D centers and ISO/TS 16949-certified wafer fabs.

SIGC14T60NCX1SA1 belongs to Infineon's high-voltage NPT IGBT die portfolio, developed specifically for industrial power modules demanding high short-circuit immunity, thermal stability, and parallel scalability in harsh ambient conditions.

FAQ

What die-attach methods are qualified for SIGC14T60NCX1SA1?

SIGC14T60NCX1SA1 is qualified for both electrically conductive epoxy die attach and soft-solder (SnAgCu or SnPb) bonding. The Ni-Ag collector metallization ensures strong interfacial adhesion and low contact resistance in either process. Thermal cycling validation confirms >1000 cycles between −40 °C and +125 °C without delamination.

Is wire bonding limited to aluminum only?

Yes - the emitter and gate pads use Al-Si (1%) metallization, which is optimized for aluminum wire bonding. Copper wire bonding is not qualified due to intermetallic formation risk and lack of adhesion validation. Recommended wire diameter is 300–500 µm, with maximum loop height of 150 µm to limit parasitic inductance.

Does SIGC14T60NCX1SA1 require negative gate voltage for safe turn-off?

No - the device is fully characterized with V_GE = +15 V / −0 V gate drive. Negative voltage is not required for reliable turn-off, though −5 V may be used to improve noise immunity in high-dv/dt environments. Gate drive circuits must limit V_GE to ±20 V absolute maximum per datasheet ratings.

How is short-circuit capability validated for this die?

Short-circuit ruggedness is validated per IEC 60747-9 Annex B: 15 A, V_CC = 300 V, T_j = 150 °C, t_SC = 10 µs. The NPT structure limits peak short-circuit current to ~3× I_C, preventing latch-up and enabling safe shutdown within standard DESAT response windows.

SIGC14T60NCX1SA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 15 A

Current - Collector Pulsed (Icm):: 45 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 15A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 21ns/110ns

Test Condition:: 300V, 15A, 18Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC14T60NCX1SA1 FAQ

1.How can I place an order for SIGC14T60NCX1SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC14T60NCX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC14T60NCX1SA1 reliable?

The price and inventory of SIGC14T60NCX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC14T60NCX1SA1 is usually 5 days.

3.What payment methods are accepted for SIGC14T60NCX1SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC14T60NCX1SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC14T60NCX1SA1?

SIGC14T60NCX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC14T60NCX1SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC14T60NCX1SA1?

For technical support, including SIGC14T60NCX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC14T60NCX1SA1 requirements.

6.How does Aetrix verify that SIGC14T60NCX1SA1 is sourced from the original manufacturer or authorized distributors?

All SIGC14T60NCX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC14T60NCX1SA1 meets industry standards.

7.What is the process for return or replacement of SIGC14T60NCX1SA1?

All SIGC14T60NCX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC14T60NCX1SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC14T60NCX1SA1 part is unused and in its original packaging.

Return procedure for SIGC14T60NCX1SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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