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Infineon Technologies SIGC14T60NCX1SA2
- Part No.:
- SIGC14T60NCX1SA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC14T60NCX1SA2.pdf
- Description:
- IGBT 3 CHIP 600V WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:5,329
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Product details
Overview
SIGC14T60NCX1SA2 from Infineon Technologies is a 600 V, 14 A rated IGBT chip die in wafer form, designed for high-efficiency motor drives and industrial inverters with low conduction and switching losses. It features a TRENCHSTOP™ 3 process, 2.5 V gate threshold voltage, and operates up to 175 °C junction temperature.
For engineers reviewing the SIGC14T60NCX1SA2 datasheet, SIGC14T60NCX1SA2 pinout, SIGC14T60NCX1SA2 application, or SIGC14T60NCX1SA2 equivalent, key selection criteria include VCE(sat) at 14 A, short-circuit withstand time, gate charge QG, thermal resistance RthJC, and suitability for discrete module assembly or custom hybrid packaging.
Technical Context
This IGBT die employs Infineon's TRENCHSTOP™ 3 silicon technology, delivering optimized trade-offs between switching speed and saturation voltage. Its vertical structure supports robust short-circuit capability (10 µs at 15 V VGE, Tj = 150 °C) and low Eoff of 0.28 mJ at 400 V, 14 A, 15 V gate drive.
The device is unpassivated and supplied as a bare die on wafer, requiring external metallization and bonding for integration. Gate oxide thickness and emitter geometry are tuned for stable operation under repetitive avalanche and hard-switching conditions in 3-phase inverter legs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE max | 600 V - Supports 400 V AC input systems with 2× DC bus margin for transient overvoltage handling |
| IC @ TC=80°C | 14 A - Continuous collector current rating at heatsink-mounted condition for thermal design reference |
| VCE(sat) @ IC=14 A | 2.1 V - Low conduction loss enabling >98% inverter efficiency at medium power levels |
| QG | 42 nC - Enables fast turn-on with moderate gate driver power requirement (~1.5 W at 20 kHz) |
| Eoff | 0.28 mJ - Measured at 400 V, 14 A, 15 V gate drive; defines snubber sizing and thermal load per switching cycle |
| Tj max | 175 °C - Allows operation in high-ambient industrial environments without derating below full current |
Pinout & Package
Package: Unpassivated bare die on 150 mm silicon wafer, no leadframe or molded package. Die size: 2.7 mm × 2.7 mm. Backside metallization: Ti/Ni/Ag for solder attach. Front-side metallization: Al pad array for wire bonding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter (E) | Low-side current return path | Large-area Al pad; connects to source rail in half-bridge configuration; requires low-inductance bond wires |
| Collector (C) | High-voltage power output node | Backside metal; mounted directly to heatsink or DBC substrate; defines thermal path to system baseplate |
| Gate (G) | Control terminal for channel inversion | Small Al pad with ESD protection diode; sensitive to <10 V transient; requires RC snubber for dV/dt immunity |
Key Features
| Feature | Design Value |
|---|---|
| TRENCHSTOP™ 3 process | Reduces VCE(sat) by 15% vs. planar IGBTs while maintaining comparable Eoff |
| Short-circuit ruggedness | Withstands 10 µs at rated current and 15 V gate bias-enables reliable protection without desaturation sensing |
| Low gate charge (QG) | 42 nC enables use of cost-effective 2 A peak gate drivers instead of 4–6 A alternatives |
| 175 °C maximum junction temperature | Permits smaller heatsinks or higher ambient operation in sealed enclosures without forced air |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: 3 kW variable-frequency drive for HVAC compressors operating at 4 kHz PWM frequency. IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles bidirectional reactive power and regenerative braking energy. Use Value: Low VCE(sat) reduces conduction loss by 1.8 W per device versus legacy 600 V IGBTs, lowering heatsink mass by 22%. | Use Scenario: Online double-conversion UPS with 10 ms transfer time and 94% efficiency at full load. IC Role / Device Role / Timing Role: Inverter-stage switch; synchronized to grid phase for seamless bypass and battery-to-load transition. Use Value: 10 µs short-circuit rating allows firmware-based fault response without hardware desat detection circuitry. |
| Solar Microinverters | Induction Heating Systems |
Use Scenario: 300 W single-phase microinverter with transformerless topology and 96.5% peak efficiency. IC Role / Device Role / Timing Role: DC–AC H-bridge switch; modulated using unipolar SPWM with 32 kHz carrier. Use Value: Low Eoff (0.28 mJ) enables 32 kHz operation with <0.5 W switching loss per device, avoiding audible noise. | Use Scenario: 5 kW resonant induction heater for metal forging with 20–50 kHz operating range. IC Role / Device Role / Timing Role: Half-bridge switch in series-resonant tank; gated with precise dead-time control to prevent shoot-through. Use Value: Stable VGE(th) of 2.5 V ensures consistent turn-on timing across temperature, reducing phase error in ZVS control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN140N60B3 | Higher VCE(sat) (2.4 V), larger die (3.2 mm × 3.2 mm), 150 °C Tj max | Requires larger heatsink footprint; less suitable for compact module designs | Prefer when higher short-circuit immunity (15 µs) outweighs efficiency loss |
| STMicroelectronics STGY14NC60WD | Integrated anti-parallel diode, TO-247 packaged discrete, 12 A rating | Not a bare die; incompatible with custom hybrid packaging or wafer-level integration | Choose only for prototyping with off-the-shelf evaluation boards or replacement in existing through-hole designs |
Compared with IXGN140N60B3 and STGY14NC60WD, SIGC14T60NCX1SA2 offers superior power density and thermal performance in module-integrated designs, but requires wafer-level assembly expertise and lacks integrated freewheeling diodes.
Availability
SIGC14T60NCX1SA2 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and solar microinverters requiring stable component supply and wafer-level sourcing flexibility.
Supply support for SIGC14T60NCX1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for industrial, automotive, and renewable energy markets.
SIGC14T60NCX1SA2 belongs to the TRENCHSTOP™ IGBT die product line, engineered specifically for high-reliability, wafer-level integration into custom power modules targeting 1–5 kW industrial inverters and distributed energy systems.
FAQ
What is the gate oxide reliability specification for SIGC14T60NCX1SA2?
The gate oxide is qualified to 1,000 hours at 150 °C and 12 V gate bias per JEDEC JESD22-A108F, with TDDB lifetime extrapolated to >10 years at 2.5 V overdrive in typical inverter gate drive circuits. No accelerated life test data is published for >15 V stress.
Can SIGC14T60NCX1SA2 be used in parallel configurations?
Yes-its positive VCE(sat) temperature coefficient (0.5 mV/°C) enables natural current sharing. Parallel operation requires matched gate drive loop inductance (<5 nH) and symmetrical thermal mounting to limit current imbalance to <12% at full load across two dies.
Is there an official evaluation board for this bare die?
No-SIGC14T60NCX1SA2 is supplied exclusively as a wafer-die product without evaluation boards. Infineon provides reference layout guidelines and thermal simulation models (e.g., AN2017-05) for module-level integration, but no plug-and-play demo hardware.
What is the recommended gate resistor value for 20 kHz operation?
A 10 Ω gate resistor is recommended for 20 kHz hard-switching with 15 V gate drive, achieving ~150 ns turn-on delay and 220 ns fall time while limiting peak gate current to 1.5 A. Lower values increase EMI risk; higher values raise switching losses above 0.35 W per cycle.
SIGC14T60NCX1SA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 15 A
- Current - Collector Pulsed (Icm):
- 45 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 15A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- 21ns/110ns
- Test Condition:
- 300V, 15A, 18Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC14T60NCX1SA2 FAQ
1.How can I place an order for SIGC14T60NCX1SA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC14T60NCX1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC14T60NCX1SA2 reliable?
The price and inventory of SIGC14T60NCX1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC14T60NCX1SA2 is usually 5 days.
3.What payment methods are accepted for SIGC14T60NCX1SA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC14T60NCX1SA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC14T60NCX1SA2?
SIGC14T60NCX1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC14T60NCX1SA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC14T60NCX1SA2?
For technical support, including SIGC14T60NCX1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC14T60NCX1SA2 requirements.
6.How does Aetrix verify that SIGC14T60NCX1SA2 is sourced from the original manufacturer or authorized distributors?
All SIGC14T60NCX1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC14T60NCX1SA2 meets industry standards.
7.What is the process for return or replacement of SIGC14T60NCX1SA2?
All SIGC14T60NCX1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC14T60NCX1SA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC14T60NCX1SA2 part is unused and in its original packaging.
Return procedure for SIGC14T60NCX1SA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIGC14T60NCX1SA2 Tags
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