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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC14T60NCX1SA3

Name: SIGC14T60NCX1SA3
Brand: Infineon Technologies
SKU: SIGC14T60NCX1SA3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC14T60NCX1SA3

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC14T60NCX1SA3.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:3,669

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Product details

Overview

SIGC14T60NCX1SA3 from Infineon Technologies is a 600 V, 15 A NPT (Non-Punch-Through) IGBT bare die optimized for industrial motor drives and inverter modules. It features a 3.8 × 3.8 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, and V_CE(sat) = 2.0 V (typ.) at I_C = 15 A, V_GE = 15 V. Used as the core switching element in 3-phase AC drive inverters.

For engineers reviewing the SIGC14T60NCX1SA3 datasheet, SIGC14T60NCX1SA3 pinout (emitter/gate/collector terminals), SIGC14T60NCX1SA3 application in motor drive modules, or SIGC14T60NCX1SA3 equivalent bare-die IGBTs, this page delivers verified die-level specifications, thermal and switching behavior, mechanical layout, and substitution guidance aligned with Infineon's FS15R06XL4 module context.

Technical Context

This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 5.5 V (typ.), enabling robust turn-on control under noisy gate-drive conditions. Its 675 pF input capacitance (C_iss) and 60 pF reverse transfer capacitance (C_rss) support predictable Miller-effect behavior during high-dV/dt switching.

Static performance includes V_(BR)CES ≥ 600 V and I_CES ≤ 1.1 µA at V_CE = 600 V, confirming high-voltage blocking integrity. Switching times-t_d(on) = 21 ns, t_r = 8 ns, t_d(off) = 110 ns, t_f = 25 ns-are measured under standardized inductive-load conditions (V_CC = 300 V, I_C = 15 A, T_j = 125 °C, R_G = 18 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	600 V - supports 400 V AC line-fed inverters with 1.5× safety margin against transients
I_C (DC)	15 A - defines continuous current capability at T_jmax, dependent on heatsink design
V_CE(sat)	2.0 V (typ.) - determines conduction loss and thermal load in hard-switched PWM operation
V_GE(th)	5.5 V (typ.) - ensures noise-immune gate triggering while allowing standard ±15 V gate drivers
C_rss	60 pF - directly impacts Miller-induced false turn-on risk and gate driver power requirement
t_d(off)	110 ns - sets minimum dead-time requirement to prevent shoot-through in bridge configurations
T_j Range	–55 °C to +150 °C - enables operation in sealed industrial enclosures without active cooling

Pinout & Package

SIGC14T60NCX1SA3 is supplied as a bare die on foil (Q67050-A4135-A001), with no leadframe or molded package. Terminal identification is defined by metallized pads: Emitter (1.89 × 2.19 mm² AlSi1%), Gate (0.7 × 1.09 mm² Al), and Collector (backside NiAg system). Die thickness is 100 µm; wafer diameter is 150 mm.

Pin/Terminal	Circuit Role	Design Meaning
Emitter Pad	Main current output terminal	Large-area AlSi1% pad (1.89 × 2.19 mm²) optimized for low-inductance wire bonding and thermal spreading
Gate Pad	Control input node	Small Al pad (0.7 × 1.09 mm²) requiring precise gate-driver routing to minimize ringing and Miller coupling
Collector (Backside)	Main current return path	NiAg metallization enables reliable epoxy or soft-solder die attachment to insulated copper baseplates

Key Features

Feature	Design Value
Positive Temperature Coefficient	Enables stable current sharing when multiple dies are paralleled without external current-balancing resistors
NPT Device Architecture	Provides soft, controllable turn-off with reduced tail current versus PT/FS IGBTs, lowering switching loss in medium-frequency drives
100 µm Thin Wafer	Reduces carrier storage time and improves short-circuit ruggedness while maintaining voltage rating
Photoimide Passivation	Frontside polymer layer prevents moisture ingress and metal migration during high-humidity module encapsulation

Applications

Industrial Motor Drives

UPS Inverters

Use Scenario: Three-phase 400 V AC variable-frequency drive controlling induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Main switching device in 6-pulse inverter leg; handles 15 A RMS output current with 16 kHz PWM.

Use Value: V_CE(sat) = 2.0 V minimizes conduction loss at full load, reducing heatsink size by ~18% vs. comparable 2.4 V devices.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from rectified DC bus.

IC Role / Device Role / Timing Role: Output stage IGBT in H-bridge inverter; switches at 8–12 kHz with tight dead-time control.

Use Value: t_d(off) = 110 ns enables <150 ns dead-time setting, preserving output waveform fidelity without shoot-through risk.

Solar String Inverters

Welding Power Supplies

Use Scenario: Single-phase transformerless PV inverter converting 600 V DC string voltage to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side/low-side switch in full-bridge topology; subjected to repetitive 600 V blocking and fast dV/dt.

Use Value: V_(BR)CES ≥ 600 V and I_CES ≤ 1.1 µA ensure long-term reliability under partial shading-induced overvoltage stress.

Use Scenario: IGBT-based inverter welding power supply delivering pulsed 200 A DC output with rapid current rise/fall.

IC Role / Device Role / Timing Role: Primary switching element in resonant DC-DC stage; operated with 5–10 µs pulse widths.

Use Value: t_r = 8 ns and t_f = 25 ns allow precise arc-current shaping, improving weld penetration consistency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKB15N60T	600 V, 15 A TRENCHSTOP™ IGBT die; lower V_CE(sat) (1.6 V typ.), higher C_iss (950 pF)	Better efficiency at light loads; requires stronger gate drive due to higher input capacitance	Preferable where conduction loss dominates and gate drive capability allows
FGH15T60UFD	600 V, 15 A Field Stop IGBT die; faster t_f (15 ns), higher V_CE(sat) (2.2 V typ.)	Superior dynamic performance in high-frequency (>20 kHz) welding or induction heating	Select when switching loss reduction outweighs conduction loss penalty

Compared with IKB15N60T and FGH15T60UFD, SIGC14T60NCX1SA3 offers balanced trade-offs: moderate V_CE(sat), proven NPT ruggedness, and predictable switching timing-ideal for cost-sensitive, thermally constrained industrial drive modules where reliability trumps peak efficiency.

Availability

SIGC14T60NCX1SA3 is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, solar string inverters, and welding power supplies requiring stable component supply and traceable die-level sourcing.

Supply support for SIGC14T60NCX1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

SIGC14T60NCX1SA3 belongs to Infineon's legacy NPT IGBT die portfolio, designed specifically for integration into compact, high-reliability industrial inverter modules such as the FS15R06XL4, emphasizing thermal stability and parallel scalability.

FAQ

Is SIGC14T60NCX1SA3 a packaged device or bare die?

SIGC14T60NCX1SA3 is a bare silicon die mounted on foil (Q67050-A4135-A001), not a packaged component. It lacks leads, molding compound, or integrated terminals and must be assembled into modules using die-attach and wire-bonding processes per Infineon's application notes.

What is the recommended gate resistor value for this IGBT die?

Infineon specifies R_G = 18 Ω for switching characterization (t_d(off), t_f). For system-level design, R_G should be selected between 10 Ω and 22 Ω depending on required dV/dt control, EMI limits, and gate driver peak current capability-lower values reduce switching loss but increase EMI risk.

Can SIGC14T60NCX1SA3 be paralleled with other IGBT dies?

Yes-its positive temperature coefficient of V_CE(sat) enables inherent current balancing. Successful paralleling requires matched die placement, symmetrical gate routing, identical bond-wire lengths, and uniform thermal interface to the baseplate to avoid thermal runaway.

Does this die require special handling due to ESD sensitivity?

Yes-SIGC14T60NCX1SA3 is classified as an electrostatic discharge sensitive device per MIL-STD-883. Handling requires grounded workstations, ionized air, ESD-safe tweezers, and storage in dry nitrogen within original packaging for ≤6 months at 23 °C.

SIGC14T60NCX1SA3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 15 A

Current - Collector Pulsed (Icm):: 45 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 15A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 21ns/110ns

Test Condition:: 300V, 15A, 18Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC14T60NCX1SA3 FAQ

1.How can I place an order for SIGC14T60NCX1SA3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC14T60NCX1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC14T60NCX1SA3 reliable?

The price and inventory of SIGC14T60NCX1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC14T60NCX1SA3 is usually 5 days.

3.What payment methods are accepted for SIGC14T60NCX1SA3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC14T60NCX1SA3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC14T60NCX1SA3?

SIGC14T60NCX1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC14T60NCX1SA3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC14T60NCX1SA3?

For technical support, including SIGC14T60NCX1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC14T60NCX1SA3 requirements.

6.How does Aetrix verify that SIGC14T60NCX1SA3 is sourced from the original manufacturer or authorized distributors?

All SIGC14T60NCX1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC14T60NCX1SA3 meets industry standards.

7.What is the process for return or replacement of SIGC14T60NCX1SA3?

All SIGC14T60NCX1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC14T60NCX1SA3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC14T60NCX1SA3 part is unused and in its original packaging.

Return procedure for SIGC14T60NCX1SA3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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