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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC14T60NCX1SA6

Name: SIGC14T60NCX1SA6
Brand: Infineon Technologies
SKU: SIGC14T60NCX1SA6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC14T60NCX1SA6

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC14T60NCX1SA6.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:9,473

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Product details

Overview

SIGC14T60NCX1SA6 from Infineon Technologies is a 600 V, 15 A NPT (Non-Punch-Through) IGBT bare die optimized for industrial motor drives and inverter modules. It features a 3.8 × 3.8 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, and V_CE(sat) = 2.0 V (typ.) at 15 A/15 V_GE. Used in compact high-power IGBT modules requiring thermal and electrical robustness.

For engineers reviewing the SIGC14T60NCX1SA6 datasheet, SIGC14T60NCX1SA6 pinout (emitter/gate/collector terminals), SIGC14T60NCX1SA6 application in motor drive modules, or SIGC14T60NCX1SA6 equivalent bare-die IGBTs, this page delivers verified die-level specifications, mechanical layout, thermal limits, switching behavior, and module integration guidance - all confirmed from Infineon's official chip data sheet L7232-M Edition 2.

Technical Context

This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 5.5 V (typ.), exhibits low 675 pF input capacitance (C_iss), and delivers fast switching: t_d(on) = 21 ns, t_f = 25 ns (T_j = 125°C, R_G = 18 Ω). Its 100 µm thin wafer enables superior thermal response and reduced saturation voltage drift over temperature.

The die uses Al–Si (1%) emitter metallization (3200 nm) and Ni–Ag collector metallization (1400 nm), supporting both epoxy and soft-solder die bonding. Passivation is photoimide-based, and the emitter pad (1.89 × 2.19 mm²) and gate pad (0.7 × 1.09 mm²) are defined for reliable wire bonding with ≤500 µm Al wires.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage for 600 V-class inverter DC bus applications
I_C	15 A - Continuous collector current rating at T_jmax, defining thermal design margin in module assembly
V_CE(sat)	2.0 V (typ.) - Low conduction loss enabling high-efficiency 15–20 kHz motor drive inverters
V_GE(th)	5.5 V (typ.) - Gate threshold ensures noise immunity while allowing standard ±15 V gate drive
t_f	25 ns - Fast fall time reduces switching losses in hard-switched PWM topologies
C_iss	675 pF - Input capacitance directly impacts gate drive power and Miller effect in half-bridge layouts
T_j range	−55 to +150 °C - Extended junction temperature supports high-power density module packaging

Pinout & Package

Package: Bare die (unencapsulated silicon chip), 3.8 × 3.8 mm² outline, 100 µm thickness, sawn on foil, Q67050-A4135-A001 footprint. Not housed in leadframe or molded package.

Pin/Terminal	Circuit Role	Design Meaning
Emitter pad (1.89 × 2.19 mm²)	Low-side current return path	Large-area Al–Si metallization enables low-inductance, high-current bond-wire attachment and thermal spreading
Gate pad (0.7 × 1.09 mm²)	Control terminal for channel modulation	Defined geometry supports precise gate resistance matching and minimizes parasitic oscillation risk
Collector metallization (Ni–Ag)	High-voltage, high-current output node	Ni–Ag system provides solder/epoxy compatibility and low contact resistance to module baseplate

Key Features

Feature	Design Value
Positive temperature coefficient of V_CE(sat)	Enables inherently stable current sharing in paralleled die configurations without external ballasting
NPT device architecture	Provides balanced trade-off between conduction loss, switching speed, and ruggedness for 600 V industrial inverters
100 µm thin die	Reduces thermal resistance from junction-to-solder interface, improving power cycling capability
Photoimide passivation	Ensures long-term reliability under high-humidity and high-bias stress conditions in sealed modules

Applications

Industrial Motor Drives

UPS Inverters

Use Scenario: Three-phase 7.5–15 kW variable-frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: Main switching element in 600 V, 15 A half-bridge IGBT module.

Use Value: V_CE(sat) = 2.0 V and t_f = 25 ns enable >97% inverter efficiency at 16 kHz PWM with minimal heatsink requirement.

Use Scenario: Online double-conversion UPS systems with bidirectional energy flow.

IC Role / Device Role / Timing Role: Output stage switch in 600 V DC–AC inverter section.

Use Value: Positive V_CE(sat) TC and 150 °C T_jmax support continuous overload operation and thermal derating predictability.

Solar String Inverters

Induction Heating Systems

Use Scenario: 5–10 kW string inverters with transformerless topology.

IC Role / Device Role / Timing Role: DC-link switching device in H-bridge configuration.

Use Value: 600 V V_CE rating and low C_iss (675 pF) reduce EMI generation and gate drive losses at 20 kHz switching.

Use Scenario: Medium-frequency (20–50 kHz) resonant heating inverters for metal forging.

IC Role / Device Role / Timing Role: High-current, high-dV/dt switch in series-resonant full-bridge.

Use Value: Robust 45 A pulsed current rating and 110 ns turn-off delay support high peak-power burst operation without second breakdown.

Availability

SIGC14T60NCX1SA6 is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, solar string inverters, and induction heating systems requiring stable component supply and traceable bare-die sourcing.

Supply support for SIGC14T60NCX1SA6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

SIGC14T60NCX1SA6 belongs to Infineon's high-reliability NPT IGBT die portfolio, designed specifically for integration into industrial-grade power modules where thermal stability, parallel scalability, and rugged short-circuit performance are critical.

FAQ

What is the recommended gate resistor value for SIGC14T60NCX1SA6 in a 15 A inverter module?

Infineon specifies R_G = 18 Ω for switching characterization (t_d(off), t_f). For 15 A operation, 15–22 Ω is typical to balance switching loss (↑R_G) and voltage overshoot (↓R_G). Layout parasitics must be minimized, and gate drive must deliver ±15 V with ≥2 A peak current to ensure clean turn-on/turn-off.

Can SIGC14T60NCX1SA6 be used in parallel with other IGBT dies?

Yes - its positive temperature coefficient of V_CE(sat) ensures inherent current sharing across multiple dies under thermal imbalance. Parallel operation requires matched gate drive paths, symmetrical thermal mounting, and identical die bond-line geometry to avoid dynamic current skew during switching transitions.

What die bonding methods are qualified for SIGC14T60NCX1SA6?

Both electrically conductive epoxy and soft-solder (e.g., SnAgCu) are qualified per Infineon's L7232-M spec. Epoxy is preferred for lower thermal stress; solder offers higher thermal conductivity. Ni–Ag collector metallization ensures wetting compatibility with both processes, and Al–Si emitter allows reliable Al wire bonding.

Is SIGC14T60NCX1SA6 rated for short-circuit withstand time?

No short-circuit ruggedness (t_sc) is specified in the chip data sheet. As a bare die, its short-circuit capability depends entirely on module-level protection (desaturation detection, gate clamping, fast shutdown). Designers must implement external fault handling - the die itself is not characterized for t_sc per JEDEC JESD47.

SIGC14T60NCX1SA6 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 15 A

Current - Collector Pulsed (Icm):: 45 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 15A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 21ns/110ns

Test Condition:: 300V, 15A, 18Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC14T60NCX1SA6 FAQ

1.How can I place an order for SIGC14T60NCX1SA6 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC14T60NCX1SA6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC14T60NCX1SA6 reliable?

The price and inventory of SIGC14T60NCX1SA6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC14T60NCX1SA6 is usually 5 days.

3.What payment methods are accepted for SIGC14T60NCX1SA6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC14T60NCX1SA6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC14T60NCX1SA6?

SIGC14T60NCX1SA6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC14T60NCX1SA6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC14T60NCX1SA6?

For technical support, including SIGC14T60NCX1SA6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC14T60NCX1SA6 requirements.

6.How does Aetrix verify that SIGC14T60NCX1SA6 is sourced from the original manufacturer or authorized distributors?

All SIGC14T60NCX1SA6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC14T60NCX1SA6 meets industry standards.

7.What is the process for return or replacement of SIGC14T60NCX1SA6?

All SIGC14T60NCX1SA6 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC14T60NCX1SA6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC14T60NCX1SA6 part is unused and in its original packaging.

Return procedure for SIGC14T60NCX1SA6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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