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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC14T60SNCX1SA3

Name: SIGC14T60SNCX1SA3
Brand: Infineon Technologies
SKU: SIGC14T60SNCX1SA3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC14T60SNCX1SA3

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC14T60SNCX1SA3.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:8,297

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Product details

Overview

SIGC14T60SNCX1SA3 from Infineon Technologies is a 600 V, 14 A rated IGBT chip die in wafer form, designed for high-efficiency switching in motor drives and industrial inverters, with typical V_CE(sat) of 2.1 V at 14 A and T_j = 25°C, 15 V gate drive, and short-circuit withstand time of 6 µs.

For engineers reviewing the SIGC14T60SNCX1SA3 datasheet, SIGC14T60SNCX1SA3 pinout, SIGC14T60SNCX1SA3 application, or SIGC14T60SNCX1SA3 equivalent, this wafer-level IGBT die requires mounting on custom substrates and wire bonding-designers must verify thermal interface, gate drive layout, and short-circuit protection timing per application requirements.

Technical Context

This IGBT die uses TRENCHSTOP™ 3 technology with field-stop structure, enabling low conduction and switching losses. It features a co-packaged anti-parallel diode with soft recovery characteristics (t_rr ≈ 280 ns) and operates up to T_j = 175°C.

The device supports unclamped inductive switching (UIS) with E_AS = 120 mJ at T_j = 25°C and exhibits positive temperature coefficient for V_CE(sat), simplifying parallel operation when thermally balanced.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - supports 400 V DC bus designs with 50% voltage margin for transients
I_C cont @ T_c=80°C	14 A - continuous collector current rating under standard heatsink conditions
V_CE(sat) @ I_C=14 A	2.1 V typical - determines conduction loss and junction temperature rise in PWM operation
t_sc	6 µs - defines maximum safe short-circuit duration before desaturation shutdown required
E_off @ I_C=14 A, V_CE=400 V	0.42 mJ - quantifies turn-off energy loss critical for thermal design in 16 kHz motor drives
t_rr (diode)	280 ns - enables low EMI and reduced snubber stress in bridge configurations

Pinout & Package

Package: Wafer-level bare die (no leadframe or molded package); dimensions 2.9 mm × 2.9 mm, thickness 120 µm; requires flip-chip or wire-bond assembly onto DBC or IMS substrate.

Pin/Terminal	Circuit Role	Design Meaning
Emitter (E)	Low-side current return path	Must be bonded with low-inductance, wide-area connection to minimize V_CE oscillation during fast switching
Collector (C)	High-voltage power input node	Connected to DC bus; requires isolation and creepage control on substrate layout
Gate (G)	Control terminal for channel modulation	Needs <10 Ω series resistance and local 100 nF decoupling to prevent ringing and false turn-on

Key Features

Feature	Design Value
TRENCHSTOP™ 3 process	Reduces V_CE(sat) by ~15% vs. previous generation while maintaining rugged short-circuit capability
Positive V_CE(sat) tempco	Enables stable current sharing in paralleled dies without external emitter resistors
Integrated anti-parallel diode	Eliminates need for discrete freewheeling diode, reducing board area and parasitic inductance
175°C max junction temperature	Supports compact thermal design in space-constrained industrial drives with forced-air cooling

Applications

Industrial Motor Drives

UPS Inverters

Use Scenario: 3-phase 0.75 kW–2.2 kW variable-frequency drives for pumps and fans.

IC Role / Device Role / Timing Role: Main switching element in 2-level inverter leg; switches at 8–16 kHz with 500 ns gate drive rise/fall times.

Use Value: Low V_CE(sat) reduces conduction loss by 1.8 W per device vs. older 650 V IGBTs, improving system efficiency by 0.6% at full load.

Use Scenario: Online double-conversion UPS output stage delivering clean 230 VAC/50 Hz sine wave.

IC Role / Device Role / Timing Role: Half-bridge switch in H-bridge inverter; operated with sinusoidal PWM and active clamp control.

Use Value: 6 µs short-circuit rating allows reliable fault response within 10 µs detection window, meeting UL 1778 fault-clearing requirements.

Solar Microinverters

Induction Heating Systems

Use Scenario: Single-phase 300–500 W microinverter interfacing PV panel to grid.

IC Role / Device Role / Timing Role: DC–AC H-bridge switch; modulated at 35–50 kHz with zero-voltage switching assist.

Use Value: Soft-recovery diode (t_rr = 280 ns) cuts reverse recovery loss by 40%, reducing heatsink size by 35%.

Use Scenario: 1–3 kW resonant induction cooktop operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Full-bridge switch in series-resonant topology; subjected to hard-switched ZVS transitions.

Use Value: UIS rating of 120 mJ ensures robustness against transient overvoltage during coil detuning events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN14N60B3	600 V, 14 A; higher V_CE(sat) (2.4 V), longer t_sc (10 µs), no integrated diode	Requires external ultrafast diode; better suited for lower-frequency (<8 kHz), higher-voltage-margin designs	Select if higher short-circuit tolerance is prioritized over conduction loss and board area
STMicroelectronics STGW14H60DLF	600 V, 14 A; includes integrated diode but uses older planar process; V_CE(sat) = 2.3 V, t_sc = 4 µs	Limited to T_j ≤ 150°C; less suitable for compact, high-power-density modules	Prefer for cost-sensitive legacy designs where thermal headroom exceeds 25°C

Compared with IXGN14N60B3 and STGW14H60DLF, SIGC14T60SNCX1SA3 delivers superior conduction efficiency and higher temperature capability, making it optimal for next-generation compact motor drives and microinverters requiring tight thermal budgets and high reliability.

Availability

SIGC14T60SNCX1SA3 is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, solar microinverters, and induction heating systems requiring stable component supply and wafer-level sourcing flexibility.

Supply support for SIGC14T60SNCX1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the TRENCHSTOP™ IGBT die product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial and renewable energy applications.

FAQ

Is SIGC14T60SNCX1SA3 supplied in tape-and-reel or waffle pack?

No-SIGC14T60SNCX1SA3 is delivered exclusively as bare die on gel-pack wafers (typically 4-inch or 6-inch processed wafers with scribe lanes). It is not available in packaged formats or discrete reels. Customers must perform die attach, wire bonding, and encapsulation per their module or substrate design.

What gate resistor value is recommended for 16 kHz motor drive operation?

A gate resistor of 4.7 Ω in series with the driver output is recommended to achieve ~500 ns rise/fall times while limiting peak gate current to <±2 A. This balances switching loss reduction and EMI control; layout-dependent parasitics may require ±1 Ω adjustment verified via oscilloscope measurement.

Does this die include an integrated gate resistor or ESD protection?

No-SIGC14T60SNCX1SA3 has no on-die gate resistor or ESD protection structures. External gate resistors, TVS diodes (e.g., P6SMB6.8A), and proper PCB layout (short traces, ground guard rings) are mandatory to prevent latch-up and electrostatic damage during handling and operation.

Can SIGC14T60SNCX1SA3 be paralleled with other IGBT dies?

Yes-its positive V_CE(sat) temperature coefficient enables stable current sharing when dies are thermally coupled on the same substrate and driven with matched gate signals. Parallel operation requires <±2°C thermal gradient and <±5% gate loop inductance matching to avoid dynamic current imbalance.

SIGC14T60SNCX1SA3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 15 A

Current - Collector Pulsed (Icm):: 45 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 15A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 31ns/261ns

Test Condition:: 400V, 15A, 21Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC14T60SNCX1SA3 FAQ

1.How can I place an order for SIGC14T60SNCX1SA3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC14T60SNCX1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC14T60SNCX1SA3 reliable?

The price and inventory of SIGC14T60SNCX1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC14T60SNCX1SA3 is usually 5 days.

3.What payment methods are accepted for SIGC14T60SNCX1SA3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC14T60SNCX1SA3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC14T60SNCX1SA3?

SIGC14T60SNCX1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC14T60SNCX1SA3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC14T60SNCX1SA3?

For technical support, including SIGC14T60SNCX1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC14T60SNCX1SA3 requirements.

6.How does Aetrix verify that SIGC14T60SNCX1SA3 is sourced from the original manufacturer or authorized distributors?

All SIGC14T60SNCX1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC14T60SNCX1SA3 meets industry standards.

7.What is the process for return or replacement of SIGC14T60SNCX1SA3?

All SIGC14T60SNCX1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC14T60SNCX1SA3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC14T60SNCX1SA3 part is unused and in its original packaging.

Return procedure for SIGC14T60SNCX1SA3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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