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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC14T60SNCX1SA4

Name: SIGC14T60SNCX1SA4
Brand: Infineon Technologies
SKU: SIGC14T60SNCX1SA4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC14T60SNCX1SA4

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC14T60SNCX1SA4.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:9,165

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Product details

Overview

SIGC14T60SNC from Infineon Technologies is a 600 V, 15 A NPT (Non-Punch-Through) IGBT bare die optimized for motor drives and industrial inverters. It features a 3.8 × 3.8 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, short-circuit ruggedness, and V_CE(sat) = 1.6–2.5 V at I_C = 15 A and V_GE = 15 V.

For engineers reviewing the SIGC14T60SNC datasheet, SIGC14T60SNC pinout (emitter/gate/collector terminals), SIGC14T60SNC application in motor drive modules, or SIGC14T60SNC equivalent bare-die IGBTs, this page delivers verified die-level specifications, thermal and switching behavior, and packaging context for die-bonding integration into custom power modules.

Technical Context

This NPT-technology IGBT die uses a 100 µm thick silicon substrate with photoimide passivation and Al–Si (1%) emitter metallization. Its gate-emitter threshold voltage (V_GE(th)) ranges 3–5 V at I_C = 400 µA, and it exhibits low C_iss (800–960 pF) and C_oss (84–100 pF) at V_CE = 25 V, enabling high-frequency switching in hard-switched topologies.

Switching performance is characterized under inductive load conditions (V_CC = 400 V, I_C = 15 A, T_j = 150 °C, R_G = 21 Ω): t_d(off) = 261–313 ns and t_f = 54–65 ns - delivering ~40% faster turn-off than Standard IGBT 2 under comparable conditions, with parasitic L/C effects explicitly noted in test methodology.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - maximum blocking voltage rating; defines usable DC bus voltage in 400 V-class inverters
I_C	15 A - continuous collector current at T_jmax; sets conduction capability for 1–2 kW motor drives
V_CE(sat)	1.6–2.5 V @ V_GE=15 V, I_C=15 A - directly determines conduction loss and thermal design margin
t_d(off)	261–313 ns - off-delay time under standardized inductive switching; critical for dead-time optimization
C_iss	800–960 pF - input capacitance at V_CE=25 V; impacts gate driver power and EMI filter sizing
T_j range	−55 to +150 °C - junction temperature operating window; enables use in sealed industrial enclosures
Die size	3.8 × 3.8 mm² - physical footprint for die attach layout; active area = 10.7 mm²

Pinout & Package

SIGC14T60SNC is supplied as an unpackaged silicon die (bare chip) on foil or unsawn wafer format. No leadframe or molded package is included. Terminal identification is via metallized pads: emitter (1.89 × 2.19 mm²), gate (0.7 × 1.09 mm²), and collector (backside metallization). Bonding requires conductive epoxy or soft solder.

Pin/Terminal	Circuit Role	Design Meaning
Emitter pad	Main current output terminal	Al–Si (1%) metallization; sized 1.89 × 2.19 mm² for wire bonding with ≤500 µm Al wire
Gate pad	Control input terminal	0.7 × 1.09 mm² Ni/Ag-compatible pad; requires low-inductance gate loop for fast switching
Collector (backside)	Main current input terminal	Ni–Ag system metallization; electrically conductive die attach surface for thermal and electrical connection

Key Features

Feature	Design Value
Positive temperature coefficient of V_CE(sat)	Enables inherently stable current sharing in paralleled IGBT configurations without external current-balancing resistors
Short-circuit ruggedness	Rated for 10 µs short-circuit withstand time at T_j = 150 °C - supports robust protection in variable-speed drives
NPT silicon technology	Provides balanced trade-off between conduction loss and switching speed; eliminates tail current for reduced turn-off loss
Photoimide frontside passivation	Ensures reliable long-term insulation and moisture resistance during die attach and molding processes
ESD-sensitive handling	Classified per MIL-STD-883; mandates grounded workstations and ionized air during assembly to prevent gate oxide damage

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 1.5 kW HVAC compressor drive with forced-air cooling.

IC Role / Device Role / Timing Role: Main switching device in 20 kHz PWM inverter leg; handles 15 A RMS output current with <1.8 V conduction drop.

Use Value: Positive tempco and low C_oss reduce thermal runaway risk and snubber losses, improving system efficiency by ~1.2% at full load.

Use Scenario: Output H-bridge in online double-conversion UPS with battery backup and 400 V DC link.

IC Role / Device Role / Timing Role: High-side/low-side switch in 16 kHz IGBT-based inverter; operates at 150 °C junction temperature during overload.

Use Value: Short-circuit ruggedness enables 10 µs fault response window, allowing time for DSP-based overcurrent shutdown without desaturation circuitry.

Solar Inverters

Induction Heating Systems

Use Scenario: DC–AC stage in string inverter with 600 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: 600 V-class switching element; used in unipolar modulation scheme with 10–15 kHz switching frequency.

Use Value: Low V_CE(sat) and 40% faster t_d(off) vs. Standard IGBT 2 reduce total switching+conduction loss by 18 W per device at 10 kHz, lowering heatsink requirements.

Use Scenario: Half-bridge resonant inverter in 20–50 kW industrial heating coil driver.

IC Role / Device Role / Timing Role: Hard-switched main switch operating at 15–30 kHz with peak I_C = 45 A pulses.

Use Value: 100 µm NPT die thickness and 3.8 × 3.8 mm² active area provide optimal thermal resistance (R_thJC ≈ 0.7 K/W estimated) for pulsed-power thermal cycling.

Availability

SIGC14T60SNC is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), solar inverters, and induction heating systems requiring stable component supply and traceable bare-die sourcing.

Supply support for SIGC14T60SNC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, headquartered in Munich.

SIGC14T60SNC belongs to Infineon's legacy NPT IGBT die portfolio, designed specifically for discrete and module-level integration into medium-power industrial inverters where ruggedness, parallel stability, and predictable switching are prioritized over ultra-high frequency operation.

FAQ

Is SIGC14T60SNC a packaged device or bare die?

SIGC14T60SNC is a bare silicon die - not a packaged component. It is supplied either sawn on foil (Q67041-A4665-A001) or unsawn (Q67041-A4665-A002), requiring external die attach, wire bonding, and encapsulation. No TO-220 or other leaded package is included.

What is the recommended gate resistor value for standard operation?

The datasheet specifies switching characterization at R_G = 21 Ω under V_CC = 400 V, I_C = 15 A, and T_j = 150 °C. For general-purpose motor drives, R_G = 15–25 Ω balances switching speed and gate oscillation risk; lower values require careful PCB layout to avoid shoot-through.

Can SIGC14T60SNC be paralleled with other IGBT dies?

Yes - its positive temperature coefficient of V_CE(sat) ensures inherent current-sharing stability when paralleled. Successful parallel operation requires matched die placement, symmetric gate routing, and uniform thermal mounting to minimize dynamic imbalance due to layout parasitics.

Does this die include integrated anti-parallel diode functionality?

No. SIGC14T60SNC is an IGBT-only die with no integrated freewheeling diode. External fast-recovery or SiC Schottky diodes must be co-packaged or externally mounted in inverter legs to handle reactive current commutation.

SIGC14T60SNCX1SA4 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 15 A

Current - Collector Pulsed (Icm):: 45 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 15A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 31ns/261ns

Test Condition:: 400V, 15A, 21Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC14T60SNCX1SA4 FAQ

1.How can I place an order for SIGC14T60SNCX1SA4 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC14T60SNCX1SA4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC14T60SNCX1SA4 reliable?

The price and inventory of SIGC14T60SNCX1SA4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC14T60SNCX1SA4 is usually 5 days.

3.What payment methods are accepted for SIGC14T60SNCX1SA4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC14T60SNCX1SA4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC14T60SNCX1SA4?

SIGC14T60SNCX1SA4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC14T60SNCX1SA4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC14T60SNCX1SA4?

For technical support, including SIGC14T60SNCX1SA4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC14T60SNCX1SA4 requirements.

6.How does Aetrix verify that SIGC14T60SNCX1SA4 is sourced from the original manufacturer or authorized distributors?

All SIGC14T60SNCX1SA4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC14T60SNCX1SA4 meets industry standards.

7.What is the process for return or replacement of SIGC14T60SNCX1SA4?

All SIGC14T60SNCX1SA4 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC14T60SNCX1SA4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC14T60SNCX1SA4 part is unused and in its original packaging.

Return procedure for SIGC14T60SNCX1SA4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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