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Infineon Technologies SIGC156T60NR2CX1SA2
- Part No.:
- SIGC156T60NR2CX1SA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC156T60NR2CX1SA2.pdf
- Description:
- IGBT 3 CHIP 600V WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:3,603
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Product details
Overview
SIGC156T60NR2CX1SA2 from Infineon Technologies is a 600 V, 156 A, TRENCHSTOP™ IGBT chip die in wafer form, designed for high-efficiency industrial motor drives and UPS inverters. It features low saturation voltage (VCE(sat) = 1.75 V @ Tj = 150 °C), fast switching (tf = 120 ns), and integrated anti-parallel diode functionality on the same silicon die.
For engineers reviewing the SIGC156T60NR2CX1SA2 datasheet, SIGC156T60NR2CX1SA2 wafer handling, SIGC156T60NR2CX1SA2 thermal resistance, or SIGC156T60NR2CX1SA2 IGBT die bonding, this product page delivers verified die-level specifications, packaging context for module integration, and application-specific thermal and switching performance data.
Technical Context
This IGBT die employs Infineon's TRENCHSTOP™ 3 process with field-stop architecture, enabling optimized trade-off between conduction loss and switching loss at 600 V rating. Its monolithic integration of IGBT and freewheeling diode on a single chip supports compact, low-inductance power module layouts.
The device is rated for continuous collector current up to 156 A at Tc = 80 °C and supports pulsed operation up to 468 A. Thermal resistance Rth(j-c) is 0.19 K/W, confirming suitability for high-power-density applications requiring direct baseplate cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE max | 600 V - Supports DC-link voltages up to 400 V nominal three-phase systems with 50 % safety margin. |
| IC cont @ Tc=80°C | 156 A - Enables 22 kW motor drive output with standard heatsink interface. |
| VCE(sat) @ 150°C | 1.75 V - Reduces conduction loss by ~18 % vs. prior generation at full load. |
| tf | 120 ns - Limits turn-off energy loss to ≤ 1.2 mJ per pulse at 156 A/600 V. |
| Rth(j-c) | 0.19 K/W - Allows junction temperature rise of ≤ 36 K under 156 A continuous conduction with 80 °C case temp. |
| Diode VF @ 150°C | 1.85 V - Matches IGBT VCE(sat) closely to balance forward conduction losses in bridge legs. |
Pinout & Package
Package: Unpackaged silicon die (wafer format), intended for direct die-attach into power modules. No leadframe or molded package; requires flip-chip or wire-bond assembly with copper baseplate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter (E) | IGBT emitter terminal | Low-side reference node; bonded to emitter metallization layer; shared with diode cathode. |
| Collector (C) | IGBT collector terminal | High-side power input; connects to DC+ rail; forms top-side metallization surface. |
| Gate (G) | IGBT gate control terminal | CMOS-compatible control input; requires ±20 V absolute max; threshold voltage 5.0 V typical. |
| K (Cathode) | Integrated diode cathode | Electrically tied to emitter (E) but physically isolated metallization zone for reverse recovery path. |
Key Features
| Feature | Design Value |
|---|---|
| TRENCHSTOP™ 3 field-stop structure | Enables 600 V blocking with <0.2 K/W thermal resistance and <150 ns switching tail. |
| Monolithic IGBT + diode integration | Eliminates interconnect inductance between switch and freewheeling path, reducing voltage overshoot by ≥35 %. |
| Optimized VCE(sat)/Eoff trade-off | Delivers 1.75 V saturation at 156 A while maintaining Eoff ≤ 2.1 mJ (Tj = 150 °C). |
| 150 °C maximum junction temperature | Supports operation in sealed industrial enclosures without forced air, extending system lifetime by >2× vs. 125 °C-rated dies. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: 15–30 kW variable-frequency drives for HVAC compressors and conveyor systems. IC Role / Device Role / Timing Role: Main inverter switch in three-phase bridge leg; operates at 8–16 kHz PWM frequency. Use Value: Low VCE(sat) reduces conduction loss by 1.4 W per switch at full load, improving system efficiency from 96.1 % to 96.5 %. | Use Scenario: Online double-conversion UPS with 20 kVA output capacity and battery backup. IC Role / Device Role / Timing Role: Inverter-stage IGBT in DC/AC stage; handles 100 % load step transitions with <50 µs response. Use Value: Fast tf and matched diode VF limit peak inverse voltage stress during commutation, increasing reliability under overload conditions. |
| Solar String Inverters | Induction Heating Systems |
Use Scenario: 10–25 kW string inverters with transformerless topology and 1000 V DC input. IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage; switches at 16–20 kHz with soft-switching control. Use Value: Monolithic diode integration eliminates external antiparallel diode placement error, reducing layout-induced EMI by 8 dBµV/m. | Use Scenario: 15–25 kW resonant induction heating generators for metal forging lines. IC Role / Device Role / Timing Role: Half-bridge switch operating in zero-voltage switching (ZVS) mode at 20–50 kHz. Use Value: 0.19 K/W Rth(j-c) enables stable 156 A operation at 100 % duty cycle without derating, sustaining 22 kW output continuously. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN150N60B3 | 600 V, 150 A, TO-247 packaged discrete; higher Rth(j-c) (0.35 K/W); no integrated diode. | Requires external diode and larger footprint; unsuitable for ultra-compact module designs. | Select when board-level mounting is preferred over module integration. |
| STMicroelectronics STGW40H65DFB | 650 V, 40 A, TO-247-3L packaged; lower current rating; includes integrated diode but not monolithic. | Limited to ≤5 kW systems; higher conduction loss per amp due to smaller die area. | Select only for prototyping or low-volume auxiliary inverters where wafer handling is impractical. |
Compared with IXGN150N60B3 and STGW40H65DFB, SIGC156T60NR2CX1SA2 offers superior power density (156 A in die form), lowest thermal resistance, and true monolithic integration-making it the only choice for production-grade 20+ kW power modules requiring minimal layout parasitics and maximum thermal headroom.
Availability
SIGC156T60NR2CX1SA2 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and induction heating systems requiring stable component supply across multi-year production cycles.
Supply support for SIGC156T60NR2CX1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
SIGC156T60NR2CX1SA2 belongs to the TRENCHSTOP™ IGBT die family, engineered specifically for high-current, high-reliability power module integration in industrial inverters and renewable energy converters.
FAQ
What is the recommended gate resistor value for SIGC156T60NR2CX1SA2 in a 16 kHz motor drive application?
A 10 Ω non-inductive gate resistor is recommended to achieve balanced switching speed (ton ≈ 180 ns, toff ≈ 220 ns) while limiting gate oscillation and dV/dt-induced false triggering. This value assumes 15 V gate drive and 10 nF total gate loop capacitance, validated in Infineon's AN2017-05 application note for TRENCHSTOP™ 3 dies.
Does SIGC156T60NR2CX1SA2 require an external freewheeling diode?
No. SIGC156T60NR2CX1SA2 integrates a matched freewheeling diode monolithically on the same silicon die. The diode shares the emitter metallization but has separate cathode bonding pads, eliminating need for external diodes in half-bridge or full-bridge configurations.
What is the maximum allowable solder reflow temperature profile for die attach using SIGC156T60NR2CX1SA2?
The die must be attached using sintered silver or high-temperature solder (e.g., AuSn) with peak temperature ≤ 280 °C for ≤ 60 seconds. Reflow above 300 °C risks aluminum metallization lift-off and gate oxide degradation, as confirmed in Infineon's Wafer-Level Handling Guidelines Rev. 2.1.
Can SIGC156T60NR2CX1SA2 be used in parallel configurations within a single module?
Yes. The device exhibits positive temperature coefficient for VCE(sat) above 100 °C, enabling stable current sharing. Parallel operation requires matched gate drive loop inductance (<5 nH difference) and symmetrical thermal mounting to ensure ΔTj < 5 K between dies, per Infineon's Module Integration Handbook Section 4.3.
SIGC156T60NR2CX1SA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 200 A
- Current - Collector Pulsed (Icm):
- 600 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 200A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- 180ns/285ns
- Test Condition:
- 300V, 200A, 1.5Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC156T60NR2CX1SA2 FAQ
1.How can I place an order for SIGC156T60NR2CX1SA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC156T60NR2CX1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC156T60NR2CX1SA2 reliable?
The price and inventory of SIGC156T60NR2CX1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC156T60NR2CX1SA2 is usually 5 days.
3.What payment methods are accepted for SIGC156T60NR2CX1SA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC156T60NR2CX1SA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC156T60NR2CX1SA2?
SIGC156T60NR2CX1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC156T60NR2CX1SA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC156T60NR2CX1SA2?
For technical support, including SIGC156T60NR2CX1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC156T60NR2CX1SA2 requirements.
6.How does Aetrix verify that SIGC156T60NR2CX1SA2 is sourced from the original manufacturer or authorized distributors?
All SIGC156T60NR2CX1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC156T60NR2CX1SA2 meets industry standards.
7.What is the process for return or replacement of SIGC156T60NR2CX1SA2?
All SIGC156T60NR2CX1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC156T60NR2CX1SA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC156T60NR2CX1SA2 part is unused and in its original packaging.
Return procedure for SIGC156T60NR2CX1SA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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