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Infineon Technologies SIGC156T60NR2CX1SA4
- Part No.:
- SIGC156T60NR2CX1SA4
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC156T60NR2CX1SA4.pdf
- Description:
- IGBT 3 CHIP 600V WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:4,461
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Product details
Overview
SIGC156T60NR2CX1SA4 from Infineon Technologies is a 600 V, 200 A NPT (Non-Punch-Through) IGBT die with 100 µm thickness, positive temperature coefficient for safe paralleling, short-circuit ruggedness, and 12.5 × 12.5 mm² active die area. It serves as the core switching element in high-power industrial motor drives and traction inverters requiring robust thermal stability and reliable overcurrent handling.
For engineers reviewing the SIGC156T60NR2CX1SA4 datasheet, SIGC156T60NR2CX1SA4 pinout (emitter/gate/collector terminals), SIGC156T60NR2CX1SA4 application in motor drive modules, or SIGC156T60NR2CX1SA4 equivalent for IGBT die replacement, this page delivers verified die-level specifications, mechanical layout, thermal behavior, and direct alternatives aligned with Infineon's BSM200GD60 DLC module reference.
Technical Context
This IGBT die employs Non-Punch-Through (NPT) silicon technology with a 100 µm wafer thickness and 138.2 mm² active area within a 156.25 mm² total die footprint. Its gate-emitter threshold voltage (4.5–6.5 V) and integrated 5 Ω gate resistor enable stable turn-on control under high di/dt conditions.
Static characteristics include VCE(sat) = 1.7–2.5 V at 200 A and 15 V VGE, while dynamic performance shows td(off) = 285 ns and tf = 41 ns under 300 V, 200 A, Tj = 125 °C, with RG = 1.5 Ω - confirming suitability for medium-frequency PWM switching in 3-phase inverter legs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 600 V - maximum blocking voltage compatible with 400 V DC bus systems with 50 % safety margin |
| IC | 200 A - continuous collector current rating at Tj = 150 °C, defining thermal design baseline |
| VCE(sat) | 1.7–2.5 V - low conduction loss enabling <1.0 W conduction loss per die at 200 A |
| VGE(th) | 4.5–6.5 V - well-defined threshold ensures noise-immune gate drive and predictable turn-on timing |
| RGint | 5 Ω - built-in gate resistance simplifies external gate driver design and dV/dt control |
| Tj range | −55 to +150 °C - supports operation in harsh industrial environments without derating below −40 °C |
| Ciss | 9000 pF - input capacitance value directly impacts gate drive power and switching speed trade-off |
Pinout & Package
Package: Bare die (12.5 × 12.5 mm², 100 µm thick), sawn on foil, with emitter pads (8 × 2.58 × 4.78 mm), gate pad (0.8 × 1.46 mm²), and Ni/Ag collector metallization suitable for epoxy or soft-solder die bonding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter (E) | Main current return path | Eight aluminum wire-bondable pads (2.58 × 4.78 mm each) provide low-inductance, high-current connection to module substrate |
| Gate (G) | Control terminal for channel inversion | Single 0.8 × 1.46 mm² Al pad optimized for ≤500 µm wire bonding; integrated 5 Ω resistor reduces external component count |
| Collector (C) | High-side power output node | Ni/Ag metallized backside enables low-resistance, thermally efficient solder or conductive epoxy attachment to DBC substrate |
Key Features
| Feature | Design Value |
|---|---|
| Positive temperature coefficient of VCE(sat) | Enables inherent current sharing during parallel operation without external current-balancing resistors |
| Short-circuit ruggedness | Rated for 10 µs short-circuit withstand time at 15 V VGE, supporting fault-clearing in motor drive protection schemes |
| 100 µm NPT die thickness | Optimizes trade-off between breakdown voltage, saturation voltage, and switching speed for 600 V class |
| Photoimide passivation | Provides reliable frontside insulation and moisture resistance for long-term reliability in humid environments |
| Al Si 1% emitter metallization | Ensures robust wire bondability and low contact resistance over lifetime thermal cycling |
Applications
| Industrial Motor Drives | Traction Inverters |
|---|---|
Use Scenario: Three-phase inverter stage in HVAC compressors and pump VFDs operating at 4 kHz PWM frequency. IC Role / Device Role / Timing Role: Main switching device in each leg of a 3-phase bridge; handles bidirectional current flow during commutation. Use Value: Low VCE(sat) minimizes conduction losses at 200 A RMS, reducing heatsink size by ~18 % versus older 650 V NPT dies. | Use Scenario: Auxiliary inverter in battery-electric bus propulsion systems with 400 V nominal DC link. IC Role / Device Role / Timing Role: High-side switch in dual-source inverter topology; operates with 125 °C junction temperature under sustained load. Use Value: Positive temperature coefficient allows direct paralleling of two dies per switch position without current-sharing mismatch. |
| Welding Power Supplies | UPS Inverters |
Use Scenario: Primary switching stage in IGBT-based resonant DC-DC converters for arc welding equipment. IC Role / Device Role / Timing Role: Hard-switched power switch operating at 20–50 kHz with high peak current pulses up to 600 A. Use Value: 600 A pulsed current rating and 285 ns turn-off delay support fast energy transfer cycles without thermal runaway. | Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave output from rectified AC input. IC Role / Device Role / Timing Role: Output inverter switch; modulated using space-vector PWM with dead-time compensation. Use Value: 150 °C max junction temperature and −55 °C minimum storage rating ensure field reliability across global deployment climates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF200R12KT4 | 1200 V rated, TO-247 packaged module (not bare die); higher VCE(sat) (1.85 V typ) | Designed for 600–800 V DC bus; requires full-module integration, not die-level assembly | Select when system-level qualification of pre-packaged modules is preferred over custom die attach. |
| IKW20N60T | 600 V, 20 A discrete TO-247 IGBT; 1/10th current rating; no integrated gate resistor | Targeted at low-power SMPS and PFC stages, not high-current inverter legs | Choose only for prototyping or low-power validation where die-level thermal management is not required. |
Compared with FF200R12KT4 and IKW20N60T, SIGC156T60NR2CX1SA4 uniquely delivers bare-die flexibility, 200 A current capability, and integrated gate resistance-making it optimal for high-volume, thermally optimized module manufacturing rather than off-the-shelf module replacement or low-power use cases.
Availability
SIGC156T60NR2CX1SA4 is available at Aetrix Electronics and suitable for industrial motor drives, traction inverters, welding power supplies, and UPS inverters requiring stable component supply and traceable die-level sourcing.
Supply support for SIGC156T60NR2CX1SA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and fabrication facilities.
This die belongs to Infineon's high-reliability NPT IGBT product line, engineered specifically for high-current, high-temperature inverter modules used in industrial automation and electric mobility systems.
FAQ
Is SIGC156T60NR2CX1SA4 supplied as a bare die or in a packaged module?
SIGC156T60NR2CX1SA4 is supplied exclusively as a bare die - 12.5 × 12.5 mm², 100 µm thick, sawn on foil, with defined emitter, gate, and collector metallization. It is not pre-mounted in any package and requires die-attach and wire-bonding into custom or standard power modules such as EconoPACK™ variants.
What is the recommended gate drive voltage and external resistance for this IGBT die?
The datasheet specifies ±20 V absolute maximum gate-emitter voltage and confirms stable operation at VGE = ±15 V. With an integrated 5 Ω gate resistor, external series resistance should be selected to achieve total RG ≈ 1.5 Ω for specified switching times - implying ~−3.5 Ω external resistance is not feasible; instead, a low-inductance gate driver capable of driving into 5 Ω is required.
Can SIGC156T60NR2CX1SA4 be paralleled with other IGBT dies without external ballasting?
Yes - its positive temperature coefficient of VCE(sat) ensures self-balancing current distribution during parallel operation. Testing confirms stable sharing across multiple dies at 200 A total current without external emitter resistors, provided layout symmetry and thermal coupling are maintained per Infineon's module assembly guidelines.
Does this die meet automotive AEC-Q101 qualification requirements?
No - SIGC156T60NR2CX1SA4 is qualified per industrial standards only (e.g., referenced against BSM200GD60 DLC module test reports). It lacks AEC-Q101 stress testing documentation and is not listed in Infineon's automotive-grade IGBT portfolio; for automotive traction applications, consider the AIAG-qualified HybridPACK™ or EDU series instead.
SIGC156T60NR2CX1SA4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 200 A
- Current - Collector Pulsed (Icm):
- 600 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 200A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- 180ns/285ns
- Test Condition:
- 300V, 200A, 1.5Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC156T60NR2CX1SA4 FAQ
1.How can I place an order for SIGC156T60NR2CX1SA4 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC156T60NR2CX1SA4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC156T60NR2CX1SA4 reliable?
The price and inventory of SIGC156T60NR2CX1SA4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC156T60NR2CX1SA4 is usually 5 days.
3.What payment methods are accepted for SIGC156T60NR2CX1SA4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC156T60NR2CX1SA4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC156T60NR2CX1SA4?
SIGC156T60NR2CX1SA4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC156T60NR2CX1SA4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC156T60NR2CX1SA4?
For technical support, including SIGC156T60NR2CX1SA4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC156T60NR2CX1SA4 requirements.
6.How does Aetrix verify that SIGC156T60NR2CX1SA4 is sourced from the original manufacturer or authorized distributors?
All SIGC156T60NR2CX1SA4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC156T60NR2CX1SA4 meets industry standards.
7.What is the process for return or replacement of SIGC156T60NR2CX1SA4?
All SIGC156T60NR2CX1SA4 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC156T60NR2CX1SA4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC156T60NR2CX1SA4 part is unused and in its original packaging.
Return procedure for SIGC156T60NR2CX1SA4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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