Infineon Technologies SIGC156T60NR2CX7SA1

Overview

SIGC156T60NR2CX7SA1 from Infineon Technologies is a 600 V, 200 A NPT (Non-Punch-Through) IGBT bare die optimized for high-power industrial drives and motor control modules. It features a 12.5 × 12.5 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable paralleling, short-circuit ruggedness, and integrated 5 Ω gate resistor. Used in Econo Pack 3 modules like BSM200GD60DLC.

For engineers reviewing the SIGC156T60NR2CX7SA1 datasheet, SIGC156T60NR2CX7SA1 pinout (emitter/gate/collector terminals), SIGC156T60NR2CX7SA1 application in motor drives, or SIGC156T60NR2CX7SA1 equivalent for IGBT module assembly, this page delivers verified die-level specifications, thermal and switching behavior, and validated alternatives for power module design and replacement.

Technical Context

This IGBT die employs Non-Punch-Through (NPT) technology with a 100 µm wafer thickness and 138.2 mm² active area, enabling robust short-circuit withstand time (tSC ≥ 10 µs at Tj = 125 °C, VCE = 300 V). Its positive VCE(sat) temperature coefficient (1.7–2.5 V at IC = 200 A, VGE = 15 V) ensures current sharing stability during parallel operation.

Dynamic performance is characterized by low Crss (≤800 pF at VCE = 25 V), fast switching (td(off) = 285 ns, tf = 41 ns under 300 V/200 A/125 °C), and gate-integrated 5 Ω resistance to dampen oscillation-critical for high-di/dt gate drive in 3-phase inverter legs.

Key Specifications

Pinout & Package

Package: Bare die (unmounted silicon chip), 12.5 × 12.5 mm² outline, 100 µm thickness, sawn on foil, photoimide passivation, Al–Si 1% emitter metallization, Ni–Ag collector metallization. Not housed in leaded or surface-mount package.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Compared with FF200R12KT4 and IKW20N60T, SIGC156T60NR2CX7SA1 offers optimal balance of 600 V rating, bare-die form factor, and proven short-circuit ruggedness for industrial-grade power modules-making it preferred for volume production of 100–200 kW drives where thermal stability and paralleling simplicity are critical.

Availability

SIGC156T60NR2CX7SA1 is available at Aetrix Electronics and suitable for industrial motor drives, renewable energy inverters, uninterruptible power supplies, and electric vehicle onboard chargers requiring stable component supply and traceable die-level sourcing.

Supply support for SIGC156T60NR2CX7SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This IGBT die belongs to Infineon's High-Voltage Power Discrete product line, engineered specifically for high-reliability, high-current power module integration in industrial automation and energy conversion systems.

FAQ

Is SIGC156T60NR2CX7SA1 supplied as a bare die or in a packaged format?

SIGC156T60NR2CX7SA1 is supplied exclusively as an unmounted bare die on foil, measuring 12.5 × 12.5 mm² with 100 µm thickness. It has no leadframe, molding compound, or standard package designation-it is intended for direct die attachment into power modules such as Econo Pack 3 or custom DBC-based assemblies.

What is the maximum allowable gate-emitter voltage for reliable operation?

The absolute maximum gate-emitter voltage is ±20 V DC, as specified in the Infineon data sheet. Operation beyond this range risks irreversible gate oxide damage. Recommended gate drive is +15 V for turn-on and −15 V for turn-off to ensure noise immunity and minimize Miller-induced false turn-on during high di/dt transitions.

Does this IGBT die include an integrated anti-parallel diode?

No. SIGC156T60NR2CX7SA1 is a standalone NPT IGBT die without any integrated freewheeling diode. System-level reverse current path must be implemented externally using discrete diodes or complementary IGBTs in the module assembly, as confirmed by its die drawing and electrical test conditions.

How is short-circuit ruggedness validated for this die?

Short-circuit ruggedness is validated per Infineon's internal test protocol: 300 V V_CE, 200 A I_C, T_j = 125 °C, with guaranteed safe operating time ≥10 µs before destructive failure. This is enabled by NPT structure design and thermal mass of the 100 µm die, and is referenced in the BSM200GD60DLC module qualification report.