Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies SIGC15T60EX1SA1

Part No.:
SIGC15T60EX1SA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
Die
Datasheet:
AetrixSIGC15T60EX1SA1.pdf
Description:
IGBT TRENCH FS 600V 30A DIE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,021

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SIGC15T60EX1SA1 from Infineon Technologies is a 600 V, 30 A rated bare-die TRENCHSTOP™ IGBT3 chip optimized for discrete and power module integration in industrial motor drives and resonant converters. It features 1.5 V typical VCE(sat) at 30 A, 6 µs short-circuit withstand time at 150 °C, and positive temperature coefficient for stable parallel operation.

For engineers reviewing the SIGC15T60EX1SA1 datasheet, SIGC15T60EX1SA1 pinout (emitter/gate terminals), SIGC15T60EX1SA1 application in motor drives or white goods inverters, or SIGC15T60EX1SA1 equivalent bare-die IGBTs, this page delivers verified die-level specifications, thermal limits, gate characteristics, and application-specific design context without package assumptions.

Technical Context

This bare-die IGBT employs trench-gate and field-stop architecture to achieve low conduction loss (VCE(sat) = 1.5 V typ. @ 30 A) and reduced turn-off energy. Its 6 µs short-circuit capability at VCC = 360 V and Tvj = 150 °C enables robust protection in hard-switched industrial inverters.

The die exhibits a positive VGE(th) temperature coefficient (5.0–6.5 V range) and low reverse transfer capacitance (Cres = 50 pF typ.), supporting stable current sharing and high-frequency switching up to resonant topologies. No integrated gate resistor is present-external gate drive must be designed per layout parasitics.

Key Specifications

ParameterValue and Actual Design Meaning
VCE Rating600 V DC - supports 400 V AC input rectified bus with 50 % margin for voltage transients
IC,n30 A - continuous collector current at Tvj = 150 °C, defining thermal design baseline
VCE(sat)1.5 V typ. @ 30 A, 15 V VGE - determines conduction loss and heatsink sizing in inverter legs
tsc6 µs @ VGE = 15 V, VCC = 360 V, Tvj = 150 °C - sets minimum fault-clearing response time for driver ICs
Cies1630 pF typ. @ 25 V, 1 MHz - impacts gate drive power and Miller effect in high-dV/dt applications
VGE(th)5.8 V typ. @ 430 µA - defines minimum gate drive voltage to ensure full enhancement and avoid linear-mode operation
Tvj Range−40 °C to +175 °C - enables operation in sealed industrial enclosures without forced air cooling

Pinout & Package

Package: Bare die (no leadframe or molded body); die size 3.92 mm × 3.88 mm; silicon thickness 70 µm; wafer diameter 200 mm; backside metallization Ni/Ag system for solder attach.

Pin/TerminalCircuit RoleDesign Meaning
E (Emitter)Main current return pathLarge-area AlSiCu pad (see chip drawing); requires low-inductance bond wire or clip attach to minimize switching overshoot
G (Gate)Control terminal for channel modulation0.61 mm × 1.08 mm Al pad; sensitive to ESD (MIL-STD-883 compliant); external gate resistor mandatory for dV/dt control

Key Features

FeatureDesign Value
Low VCE(sat)1.5 V typ. @ 30 A reduces conduction loss by >25 % vs. legacy IGBTs, lowering heatsink cost in 3–5 kW drives
Short tail currentMinimizes turn-off energy (Eoff) and enables faster switching without excessive dI/dt stress on snubbers
Positive VGE(th) coefficientEnsures inherent current balancing during parallel operation-no external emitter resistors required
6 µs short-circuit ratingAllows use with standard 5–10 µs desaturation detection circuits in industrial IPMs and discrete half-bridges

Applications

Industrial Motor DrivesHome Appliance Inverters

Use Scenario: 3-phase inverter stage in HVAC compressors and pump controllers operating at 8–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT-based 600 V DC-link half-bridge modules.

Use Value: Low VCE(sat) and short tail current reduce total losses by ~18 % versus IGBT2 dies, improving efficiency at partial load.

Use Scenario: Single-phase inverter for variable-speed washing machine drum motors with regenerative braking.

IC Role / Device Role / Timing Role: Discrete IGBT in compact, cost-sensitive inverter PCBs with direct die attach to DBC substrates.

Use Value: Positive VGE(th) coefficient enables reliable paralleling of two dies per switch leg without current-sharing resistors.

Resonant LLC ConvertersWelding Power Supplies

Use Scenario: Primary-side switching device in 100–300 kHz resonant DC-DC converters for server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-assisted hard-switched node with controlled dI/dt via gate resistance tuning.

Use Value: Low Cres (50 pF) minimizes Miller-induced false turn-on risk during high dV/dt transitions in ZVS boundary conditions.

Use Scenario: Output stage switch in IGBT-based inverter welding machines requiring burst-mode arc ignition and 500 A peak pulsed current.

IC Role / Device Role / Timing Role: Discrete high-current switch mounted on copper baseplate with soft-solder die attach.

Use Value: 90 A pulsed collector rating and 175 °C max junction temperature support 300 ms duty-cycle bursts without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKB15N60TSame 600 V/30 A rating but TO-247 packaged; includes integrated gate resistor (2.2 Ω); higher VCE(sat) (1.6 V min)Designed for discrete PCB mounting-not bare-die module integrationSelect when prototyping with through-hole evaluation or needing built-in gate resistance
FGH30S60UFDBare die, 600 V/30 A, but UFS (Ultra Field Stop) process; lower Eoff but higher VCE(sat) (1.7 V typ.)Optimized for ultra-high-frequency SMPS (>500 kHz), not motor drive thermal cyclingSelect for resonant converter designs prioritizing switching speed over conduction loss

Compared with IKB15N60T and FGH30S60UFD, SIGC15T60EX1SA1 offers the lowest VCE(sat) and best thermal robustness for industrial motor drive modules where conduction loss dominates lifetime reliability-making it optimal for 8–20 kHz hard-switched inverters with high ambient temperatures.

Availability

SIGC15T60EX1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, home appliance inverters, resonant LLC converters, and welding power supplies requiring stable component supply across multi-year production cycles.

Supply support for SIGC15T60EX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy systems.

SIGC15T60EX1SA1 belongs to the TRENCHSTOP™ IGBT3 family, engineered specifically for high-efficiency, high-reliability discrete and module-based power conversion in industrial motor control and resonant applications.

FAQ

Is SIGC15T60EX1SA1 qualified for automotive applications?

No. This bare-die IGBT is not qualified to AEC-Q101 or any automotive stress test standard. Infineon explicitly states in the datasheet that it is intended for industrial and consumer applications only. Automotive-grade alternatives require separate qualification documentation and are marked accordingly in product ordering codes.

What is the recommended gate drive voltage range?

The absolute maximum gate-emitter voltage is ±20 V, but the datasheet specifies VGE = 15 V for short-circuit testing and characterization. For reliable operation, use +15 V turn-on and −5 V to −8 V turn-off to ensure fast, noise-immune switching and prevent Miller-induced false triggering under high dV/dt.

Does SIGC15T60EX1SA1 include an integrated gate resistor?

No. The datasheet explicitly states "Integrated gate resistor rG none" under Static Characteristics. External gate resistance must be added to control switching speed, suppress oscillation, and limit peak gate current-typical values range from 5 Ω to 22 Ω depending on layout inductance and desired dI/dt.

Can this die be directly soldered to a DBC substrate?

Yes. The die features Ni/Ag backside metallization specified for reliable solder attachment. Infineon recommends using soft solder (e.g., SnAgCu) and controlling reflow profile to avoid Ni layer consumption. Electrically conductive epoxy is also permitted but yields higher thermal resistance than solder.

SIGC15T60EX1SA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™
Package/Case:
Die
Packaging:
Bulk
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
30 A
Current - Collector Pulsed (Icm):
90 A
Vce(on) (Max) @ Vge, Ic:
1.9V @ 15V, 30A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Die

SIGC15T60EX1SA1 FAQ

1.How can I place an order for SIGC15T60EX1SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC15T60EX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC15T60EX1SA1 reliable?

The price and inventory of SIGC15T60EX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC15T60EX1SA1 is usually 5 days.

3.What payment methods are accepted for SIGC15T60EX1SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC15T60EX1SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC15T60EX1SA1?

SIGC15T60EX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC15T60EX1SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC15T60EX1SA1?

For technical support, including SIGC15T60EX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC15T60EX1SA1 requirements.

6.How does Aetrix verify that SIGC15T60EX1SA1 is sourced from the original manufacturer or authorized distributors?

All SIGC15T60EX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC15T60EX1SA1 meets industry standards.

7.What is the process for return or replacement of SIGC15T60EX1SA1?

All SIGC15T60EX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC15T60EX1SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC15T60EX1SA1 part is unused and in its original packaging.

Return procedure for SIGC15T60EX1SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SIGC15T60EX1SA1 Tags

  • SIGC15T60EX1SA1
  • SIGC15T60EX1SA1 PDF
  • SIGC15T60EX1SA1 Datasheet
  • SIGC15T60EX1SA1 Specifications
  • SIGC15T60EX1SA1 Images
  • Infineon Technologies
  • Infineon Technologies SIGC15T60EX1SA1
  • Buy SIGC15T60EX1SA1
  • SIGC15T60EX1SA1 Price
  • SIGC15T60EX1SA1 Distributor
  • SIGC15T60EX1SA1 Supplier
  • SIGC15T60EX1SA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER