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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC18T60NCX1SA1

Name: SIGC18T60NCX1SA1
Brand: Infineon Technologies
SKU: SIGC18T60NCX1SA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC18T60NCX1SA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC18T60NCX1SA1.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:5,281

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Product details

Overview

SIGC18T60NCX1SA1 from Infineon Technologies is a 600 V, 20 A NPT (Non-Punch-Through) IGBT die in bare-die format, designed for high-voltage switching in industrial motor drives and power converters. It features a 4.3 × 4.3 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, and V_CE(sat) = 2.0 V (typ.) at 20 A/15 V_GE.

For engineers reviewing the SIGC18T60NCX1SA1 datasheet, SIGC18T60NCX1SA1 pinout (emitter/gate/collector terminals), SIGC18T60NCX1SA1 application in motor drive modules, or SIGC18T60NCX1SA1 equivalent bare-die IGBTs, this page delivers verified die-level specifications, thermal and switching behavior, mechanical layout, and module integration guidance.

Technical Context

This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 5.5 V (typ.), enabling robust turn-on control under noisy industrial conditions. Its 1.7–2.5 V V_CE(sat) range at 20 A ensures low conduction loss while maintaining safe SOA margins up to T_j = 150 °C.

Dynamic performance is characterized by t_d(off) = 110 ns and t_f = 25 ns (T_j = 125 °C, R_G = 13 Ω), optimized for hard-switched 300 V DC-link inverters. Input capacitance C_iss = 900 pF supports predictable gate drive sizing without requiring external Miller clamping.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage compatible with 400 V AC input rectified systems and 300 V DC-link inverters.
I_C	20 A - Continuous collector current rating at T_j = 150 °C, defining thermal design baseline for module baseplate sizing.
V_CE(sat)	2.0 V (typ.) - Low saturation voltage reduces conduction loss in 10–20 kHz motor drive switching applications.
V_GE(th)	5.5 V (typ.) - Sufficient gate threshold margin above noise floor, enabling reliable turn-on with ±15 V gate drive.
t_d(off)	110 ns - Off-delay time determines minimum dead-time setting in three-phase inverter gate drivers.
C_iss	900 pF - Input capacitance value used to calculate required gate charge (Q_g ≈ C_iss × V_GE) for driver IC selection.
T_j Range	−55 to +150 °C - Extended junction temperature capability supports compact heatsink designs in sealed enclosures.

Pinout & Package

Package: Bare die (no leadframe or molded package); 4.3 × 4.3 mm² silicon chip, 100 µm thick, sawn on foil carrier. Suitable for epoxy or soft-solder die bonding onto DBC substrates in discrete or module assembly.

Pin/Terminal	Circuit Role	Design Meaning
Emitter Pad (2.48 × 2.98 mm²)	Low-side current return path	Large-area AlSi1% metallization enables low-inductance emitter bonding and thermal spreading in multi-die modules.
Gate Pad (0.7 × 1.08 mm²)	Control terminal for channel inversion	Small, defined pad area minimizes gate loop inductance and supports precise wire-bonding with ≤500 µm Al wire.
Collector Backside	High-voltage power output node	NiAg metallization provides solder-wettable surface for direct attachment to copper baseplate or DBC collector layer.

Key Features

Feature	Design Value
Positive temperature coefficient	Enables inherent current sharing in paralleled dies without external current-balancing resistors.
NPT technology	Provides soft switching behavior and rugged short-circuit withstand time (>5 µs at 15 V_GE).
Photoimide passivation	Frontside insulation withstands >1 kV/mm electric field, critical for high-density module layouts.
150 mm wafer process	Ensures consistent parametric spread across production lots, supporting statistical BOM yield planning.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase 7.5 kW inverter driving induction motor in HVAC compressors.

IC Role / Device Role / Timing Role: Main switching element in 2-level inverter leg; operates at 8–16 kHz PWM frequency with 110 ns off-delay timing constraint.

Use Value: 2.0 V V_CE(sat) reduces conduction loss by ~12% vs. comparable 650 V trench IGBTs, lowering heatsink requirements.

Use Scenario: Online double-conversion UPS with 400 V DC-link and battery backup interface.

IC Role / Device Role / Timing Role: Inverter-stage switch handling bidirectional energy flow during transfer and regeneration modes.

Use Value: Positive tempco allows parallel configuration of two SIGC18T60NCX1SA1 dies per leg, increasing system power density without active current sensing.

Solar String Inverters

Welding Power Supplies

Use Scenario: 5 kW string inverter DC-AC stage with transformerless topology.

IC Role / Device Role / Timing Role: High-side and low-side switch in H-bridge output stage; requires 600 V blocking and <25 ns fall time for EMI control.

Use Value: 25 ns t_f at 125 °C enables <100 ns total switching transition, meeting CISPR-11 Class B conducted EMI limits.

Use Scenario: IGBT-based inverter for 200 A DC welding output with forced-air cooling.

IC Role / Device Role / Timing Role: Primary switching device in resonant DC-DC stage feeding inverter output; operates with 50–100 µs pulse bursts.

Use Value: 150 °C max T_j rating supports peak-current overloads up to 60 A without derating, matching arc ignition demands.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN20N60B3	600 V, 20 A, PT-type die; V_CE(sat) = 2.2 V (typ.); C_iss = 1100 pF	Higher conduction loss and larger input capacitance require stronger gate driver and increase switching loss.	Select when legacy PT-process compatibility or existing gate driver design favors higher V_GE(th) (6.0 V typ.) margin.
STMicroelectronics STGP20NC60KD	600 V, 20 A, Trench-Field-Stop die; V_CE(sat) = 1.8 V (typ.); t_d(off) = 85 ns	Faster switching but lower short-circuit ruggedness (3 µs) and negative tempco complicates paralleling.	Select for higher efficiency in low-thermal-mass applications where gate drive strength and SOA margin are less constrained.

Compared with IXGN20N60B3 and STGP20NC60KD, SIGC18T60NCX1SA1 offers superior thermal stability for paralleling and balanced trade-offs between conduction loss, switching speed, and ruggedness-making it optimal for industrial inverters requiring long-term reliability under variable load.

Availability

SIGC18T60NCX1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and welding power supplies requiring stable component supply and traceable bare-die sourcing.

Supply support for SIGC18T60NCX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

SIGC18T60NCX1SA1 belongs to Infineon's high-voltage NPT IGBT die portfolio, engineered specifically for module integrators building robust, thermally stable motor drives and UPS systems operating at 400–600 V DC-link voltages.

FAQ

Is SIGC18T60NCX1SA1 supplied in tape-and-reel or waffle-pack packaging?

No. SIGC18T60NCX1SA1 is delivered as bare die on foil carrier (Q67050-A4139-A001), not in tape-and-reel or waffle-pack. It requires die-attach and wire-bonding during module assembly. Storage must be in dry nitrogen at <23 °C for ≤6 months per Infineon specification.

What is the recommended gate resistor value for standard 15 V gate drive?

Infineon specifies R_G = 13 Ω for switching characterization (t_d(off), t_f). For practical use, 10–15 Ω is recommended to balance switching speed and gate oscillation damping. Lower values (<8 Ω) increase dV/dt stress; higher values (>22 Ω) extend t_d(off) beyond 150 ns, risking shoot-through in bridge configurations.

Does SIGC18T60NCX1SA1 support short-circuit operation, and for how long?

Yes. As an NPT IGBT, SIGC18T60NCX1SA1 has demonstrated short-circuit withstand time >5 µs at V_CE = 300 V, T_j = 125 °C, and V_GE = 15 V. This enables basic desaturation protection in industrial inverters without requiring ultra-fast fault detection circuitry.

Can this die be bonded using conductive epoxy instead of solder?

Yes. The NiAg collector metallization and AlSi1% emitter pad are qualified for both soft-solder (SnAgCu) and electrically conductive epoxy die bonding. Conductive epoxy is acceptable for lower-power modules (<5 kW) where thermal cycling stress is moderate and peak T_j remains below 130 °C.

SIGC18T60NCX1SA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 20 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 20A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 21ns/110ns

Test Condition:: 300V, 20A, 13Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC18T60NCX1SA1 FAQ

1.How can I place an order for SIGC18T60NCX1SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC18T60NCX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC18T60NCX1SA1 reliable?

The price and inventory of SIGC18T60NCX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC18T60NCX1SA1 is usually 5 days.

3.What payment methods are accepted for SIGC18T60NCX1SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC18T60NCX1SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC18T60NCX1SA1?

SIGC18T60NCX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC18T60NCX1SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC18T60NCX1SA1?

For technical support, including SIGC18T60NCX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC18T60NCX1SA1 requirements.

6.How does Aetrix verify that SIGC18T60NCX1SA1 is sourced from the original manufacturer or authorized distributors?

All SIGC18T60NCX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC18T60NCX1SA1 meets industry standards.

7.What is the process for return or replacement of SIGC18T60NCX1SA1?

All SIGC18T60NCX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC18T60NCX1SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC18T60NCX1SA1 part is unused and in its original packaging.

Return procedure for SIGC18T60NCX1SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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