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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC18T60NCX1SA3

Name: SIGC18T60NCX1SA3
Brand: Infineon Technologies
SKU: SIGC18T60NCX1SA3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC18T60NCX1SA3

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC18T60NCX1SA3.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:3,675

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Product details

Overview

SIGC18T60NCX1SA3 from Infineon Technologies is a 600 V, 20 A NPT (Non-Punch-Through) IGBT die in bare-die format, designed for high-voltage switching in industrial motor drives and power conversion modules. It features a 4.3 × 4.3 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, and V_CE(sat) = 2.0 V (typ.) at I_C = 20 A and V_GE = 15 V.

For engineers reviewing the SIGC18T60NCX1SA3 datasheet, SIGC18T60NCX1SA3 pinout (emitter/gate/collector terminals), SIGC18T60NCX1SA3 application in motor drive modules, or SIGC18T60NCX1SA3 equivalent bare-die IGBTs, this page provides verified die-level specifications, thermal and switching behavior, mechanical layout, and module integration guidance.

Technical Context

This NPT-technology IGBT die delivers robust short-circuit withstand capability and low conduction loss due to its optimized emitter-collector doping profile and 100 µm wafer thinning. Its positive temperature coefficient of V_CE(sat) enables inherent current sharing when paralleled in multi-chip modules.

Dynamic performance is characterized by t_d(off) = 110 ns and t_f = 25 ns under standardized inductive load conditions (V_CC = 300 V, I_C = 20 A, T_j = 125 °C, R_G = 13 Ω), with C_iss = 900 pF and C_rss = 80 pF measured at V_CE = 25 V, f = 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - maximum blocking voltage rating; defines usable DC bus voltage in 400–450 V industrial inverters
I_C	20 A - continuous collector current at T_j = 150 °C; sets thermal design baseline for die attach and heatsink sizing
V_CE(sat)	2.0 V (typ.) - conduction loss at rated current; directly determines on-state power dissipation (P_cond ≈ 40 W)
t_d(off)	110 ns - turn-off delay time; critical for dead-time setting and EMI control in PWM gate drivers
C_iss	900 pF - input capacitance; impacts gate driver power requirement and switching speed trade-offs
T_j range	−55 to +150 °C - operating junction temperature window; supports high-ambient industrial environments

Pinout & Package

Package: Bare die (unmounted silicon chip), sawn on foil, 4.3 × 4.3 mm² active area, 100 µm thickness, photoimide passivation, Al–Si 1% emitter metallization, Ni–Ag collector metallization. Not housed in leaded or surface-mount package.

Pin/Terminal	Circuit Role	Design Meaning
Emitter pad (2.48 × 2.98 mm²)	Low-side current return path	Primary current sink terminal; requires low-inductance bond wire or solder interconnect to minimize V_CE overshoot during turn-off
Gate pad (0.7 × 1.08 mm²)	Control electrode	High-impedance input requiring < ±20 V drive; sensitive to ESD (MIL-STD-883 compliant)
Collector metallization (full backside)	High-side power input	Backside-connected collector; must be bonded to electrically conductive substrate (e.g., DBC ceramic) for thermal and electrical path

Key Features

Feature	Design Value
NPT technology	Enables soft, controllable turn-off with predictable tail current-reducing voltage overshoot in hard-switched topologies
Positive V_CE(sat) tempco	Ensures natural current balancing across paralleled dies without external current-sharing resistors or active sensing
100 µm thin wafer	Improves thermal resistance (R_thJC) and reduces stored charge-enhancing short-circuit ruggedness and switching efficiency
Al–Si 1% emitter / Ni–Ag collector	Supports reliable epoxy and soft-solder die bonding; compatible with standard power module assembly processes

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 5–10 kW variable-frequency drives for HVAC and pump systems.

IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT half-bridge modules; operates at 2–16 kHz PWM frequency.

Use Value: Low V_CE(sat) and stable dynamic parameters reduce conduction and switching losses, enabling >97% system efficiency at full load.

Use Scenario: Inverter output stage in online double-conversion UPS systems delivering clean sine-wave AC output.

IC Role / Device Role / Timing Role: Core switching device in H-bridge topology; handles bidirectional energy flow during battery backup mode.

Use Value: Robust short-circuit withstand time (>10 µs) ensures safe shutdown during output faults without catastrophic failure.

Solar Photovoltaic Inverters

Induction Heating Systems

Use Scenario: DC–AC stage in string inverters converting PV array output to grid-synchronized 230/400 V AC.

IC Role / Device Role / Timing Role: Switching element in NPC or T-type multilevel topologies; subjected to high dv/dt and repetitive surge currents.

Use Value: Low C_rss (80 pF) minimizes Miller-induced false turn-on risk, improving reliability under fast-rising bus transients.

Use Scenario: Resonant inverter bridge in medium-frequency (20–50 kHz) induction cooktops and industrial heating units.

IC Role / Device Role / Timing Role: Hard-switched power switch in series-resonant LC tank; experiences high peak current and zero-voltage switching transitions.

Use Value: Precise t_d(on)/t_r and t_d(off)/t_f timing enables accurate dead-time calibration-preventing shoot-through while minimizing distortion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW20N60T	600 V, 20 A trench-gate field-stop IGBT die; lower V_CE(sat) (1.6 V typ.), higher C_iss (1200 pF)	Better conduction efficiency but more sensitive to gate oscillation; requires tighter gate loop layout	Preferred where conduction loss dominates; verify gate driver strength and PCB layout for stability
FGH20N60UFD	600 V, 20 A ultrafast IGBT die; t_f = 15 ns (vs. 25 ns), V_CE(sat) = 2.2 V (typ.)	Faster switching enables higher PWM frequencies but increases EMI filtering burden	Optimal for compact, high-frequency designs where thermal margin allows higher V_CE(sat)

Compared with IKW20N60T and FGH20N60UFD, SIGC18T60NCX1SA3 offers balanced trade-offs: moderate switching speed, proven NPT ruggedness, and superior parallel stability-making it ideal for cost-sensitive, high-reliability industrial modules where layout simplicity and thermal robustness are prioritized.

Availability

SIGC18T60NCX1SA3 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar photovoltaic inverters, and induction heating systems requiring stable component supply and long-term module production continuity.

Supply support for SIGC18T60NCX1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

SIGC18T60NCX1SA3 belongs to Infineon's legacy NPT IGBT die portfolio, engineered specifically for integration into high-reliability, medium-power industrial modules where ruggedness, thermal stability, and parallel scalability are essential.

FAQ

Is SIGC18T60NCX1SA3 supplied in tape-and-reel or waffle pack?

No. SIGC18T60NCX1SA3 is delivered as bare die on foil, not in carrier packaging. It requires manual or automated die placement equipment for module assembly. The die is marked with a ∅0.65 mm ink dot for orientation and traceability, and must be handled in dry nitrogen environment per Infineon's storage guidelines.

What is the recommended gate resistor value for this die?

Infineon specifies R_G = 13 Ω for characterization (t_d(off), t_f). For actual module use, R_G selection depends on switching speed requirements, EMI limits, and gate driver capability. Typical range is 10–22 Ω; lower values increase dV/dt and EMI but improve switching speed, while higher values reduce stress on gate driver and suppress oscillation.

Can SIGC18T60NCX1SA3 be used in 650 V DC-link applications?

No. Its absolute maximum V_CE rating is 600 V. Operating above this voltage violates the device's safe operating area and risks premature breakdown. For 650 V bus systems, select devices rated ≥650 V (e.g., 650 V FS4 or TRENCHSTOP™ IGBTs), with appropriate derating for voltage transients and temperature effects.

Does this die include integrated anti-parallel diode functionality?

No. SIGC18T60NCX1SA3 is an IGBT die only, with no monolithically integrated freewheeling diode. External fast-recovery or SiC Schottky diodes must be co-packaged in the module to provide reverse-current path for inductive loads. Die bonding layout must accommodate separate diode placement and thermal coupling.

SIGC18T60NCX1SA3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 20 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 20A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 21ns/110ns

Test Condition:: 300V, 20A, 13Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC18T60NCX1SA3 FAQ

1.How can I place an order for SIGC18T60NCX1SA3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC18T60NCX1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC18T60NCX1SA3 reliable?

The price and inventory of SIGC18T60NCX1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC18T60NCX1SA3 is usually 5 days.

3.What payment methods are accepted for SIGC18T60NCX1SA3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC18T60NCX1SA3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC18T60NCX1SA3?

SIGC18T60NCX1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC18T60NCX1SA3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC18T60NCX1SA3?

For technical support, including SIGC18T60NCX1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC18T60NCX1SA3 requirements.

6.How does Aetrix verify that SIGC18T60NCX1SA3 is sourced from the original manufacturer or authorized distributors?

All SIGC18T60NCX1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC18T60NCX1SA3 meets industry standards.

7.What is the process for return or replacement of SIGC18T60NCX1SA3?

All SIGC18T60NCX1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC18T60NCX1SA3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC18T60NCX1SA3 part is unused and in its original packaging.

Return procedure for SIGC18T60NCX1SA3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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