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Infineon Technologies SIGC18T60NCX1SA4
- Part No.:
- SIGC18T60NCX1SA4
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC18T60NCX1SA4.pdf
- Description:
- IGBT 3 CHIP 600V WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:6,616
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Product details
Overview
SIGC18T60NCX1SA4 from Infineon Technologies is a 600 V, 20 A NPT (Non-Punch-Through) IGBT die in bare-die format, designed for high-voltage switching in industrial motor drives and power converters. It features a 4.3 × 4.3 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, and Al–Si 1% emitter metallization. Used in modules such as FS20R06XL4, it delivers VCE(sat) = 2.0 V (typ.) at IC = 20 A and Tj = 25 °C.
For engineers reviewing the SIGC18T60NCX1SA4 datasheet, SIGC18T60NCX1SA4 pinout (emitter/gate/collector terminals), SIGC18T60NCX1SA4 application in motor drive modules, or SIGC18T60NCX1SA4 equivalent bare-die IGBTs, this page provides verified die-level specifications, thermal and switching behavior, mechanical layout, and module integration context - critical for die attach, wire bonding, and thermal interface design.
Technical Context
This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 5.5 V (typ.), enabling robust turn-on control under noisy gate-drive conditions. Its 900 pF input capacitance (Ciss) and 80 pF reverse transfer capacitance (Crss) at VCE = 25 V define dynamic gate drive requirements and EMI behavior during hard-switching.
Switching performance is characterized by td(on) = 21 ns, tr = 8 ns, td(off) = 110 ns, and tf = 25 ns under standardized inductive-load test conditions (VCC = 300 V, IC = 20 A, Tj = 125 °C, RG = 13 Ω), reflecting fast but controllable transition times suitable for 10–20 kHz industrial inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 600 V - Maximum blocking voltage defines suitability for 400 V AC input rectified bus applications. |
| IC | 20 A - Continuous collector current rating at Tj = 125 °C, used to size heatsink and thermal interface. |
| VCE(sat) | 2.0 V (typ.) - Conduction loss contributor; determines power dissipation at rated current. |
| VGE(th) | 5.5 V (typ.) - Gate threshold ensures noise immunity and predictable turn-on margin above 4.5 V. |
| Ciss | 900 pF - Input capacitance sets gate driver current demand and influences Miller effect during switching. |
| td(off) | 110 ns - Dominant delay in turn-off phase; impacts dead-time setting and short-circuit ruggedness. |
| Tj range | −55 to +150 °C - Extended junction temperature capability supports high-power density module designs. |
Pinout & Package
Package: Bare die (unmounted silicon chip), sawn on foil, 4.3 × 4.3 mm² total area (14.3 mm² active), 100 µm thickness, photoimide passivation, Al–Si 1% emitter metallization, Ni–Ag collector metallization. Not housed in leaded or surface-mount package.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter pad (2.48 × 2.98 mm²) | Low-side current return path | Large-area Al–Si metallization enables low-inductance, high-current bond-wire attachment and thermal conduction to substrate. |
| Gate pad (0.7 × 1.08 mm²) | Control terminal for channel modulation | Small, defined geometry ensures consistent gate resistance and minimizes parasitic oscillation risk during high-dI/dt switching. |
| Collector region (entire backside) | High-voltage output terminal | Backside Ni–Ag metallization supports soft-solder or conductive epoxy die bonding to DBC substrates in press-pack or soldered modules. |
Key Features
| Feature | Design Value |
|---|---|
| Positive temperature coefficient of VCE(sat) | Enables inherently stable current sharing when paralleling multiple dies without external current-balancing resistors. |
| NPT device architecture | Provides soft switching characteristics and improved short-circuit withstand time compared to PT IGBTs. |
| 100 µm thin wafer processing | Reduces carrier lifetime and tail current, improving switching speed while maintaining voltage ruggedness. |
| Photoimide frontside passivation | Offers superior moisture resistance and mechanical protection during handling, wire bonding, and module encapsulation. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Three-phase inverter stage in 5–10 kW variable-frequency drives for pumps and compressors. IC Role / Device Role / Timing Role: High-voltage switching element in half-bridge configuration, commutating 400 V DC bus at 16 kHz PWM frequency. Use Value: Low VCE(sat) and controlled tf reduce conduction and switching losses, enabling >97% inverter efficiency at full load. | Use Scenario: Bidirectional DC–AC conversion in online double-conversion UPS systems. IC Role / Device Role / Timing Role: Inverter switch in IGBT-based H-bridge output stage, operating with sinusoidal PWM and active clamping. Use Value: NPT soft-switching behavior and 150 °C Tj rating support reliable operation under sustained overload and battery-backup thermal stress. |
| Solar Photovoltaic Inverters | Induction Heating Systems |
Use Scenario: DC–AC stage in string inverters converting 600–800 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Main switching device in NPC or T-type three-level topology, handling 20 A RMS output current. Use Value: 600 V rating and 110 ns td(off) allow precise dead-time control and reduced circulating losses in multilevel configurations. | Use Scenario: Resonant inverter bridge in 10–30 kW medium-frequency induction heating generators. IC Role / Device Role / Timing Role: Hard-switched switch in series-resonant tank circuit operating at 10–50 kHz with high di/dt. Use Value: Positive VCE(sat) TC and low Crss minimize thermal runaway risk and Miller-induced false triggering during high-frequency, high-current transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKB15N60T | 600 V, 15 A TRENCHSTOP™ IGBT die; lower IC, higher VCE(sat) (2.2 V typ.), thinner die (70 µm) | Optimized for higher switching frequency (>30 kHz); less suited for high-current parallel configurations | Select when prioritizing switching speed over conduction loss in compact, air-cooled inverters. |
| FGH30N60LSD | 600 V, 30 A Field Stop IGBT die; higher IC, lower VCE(sat) (1.8 V typ.), larger die (5.2 × 5.2 mm²) | Designed for higher power density modules; requires larger footprint and enhanced thermal management | Select when scaling to >15 kW output with single-die per switch position and improved thermal derating margin. |
Compared with IKB15N60T and FGH30N60LSD, SIGC18T60NCX1SA4 offers balanced conduction-switching trade-off and proven NPT ruggedness for 20 A industrial modules-making it optimal for cost-sensitive, thermally constrained 5–10 kW drive platforms requiring stable parallel operation.
Availability
SIGC18T60NCX1SA4 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar photovoltaic inverters, and induction heating systems requiring stable component supply and traceable bare-die sourcing.
Supply support for SIGC18T60NCX1SA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.
SIGC18T60NCX1SA4 belongs to Infineon's high-voltage IGBT die portfolio targeting industrial power modules, emphasizing NPT technology for reliability, parallel stability, and thermal robustness in demanding drive and energy conversion applications.
FAQ
Is SIGC18T60NCX1SA4 supplied in tape-and-reel or waffle pack?
No. SIGC18T60NCX1SA4 is delivered as bare die on foil, not in tape-and-reel or waffle pack formats. It is intended for automated die placement in module assembly lines and requires cleanroom handling per Infineon's ESD-sensitive device guidelines (MIL-STD-883 compliant).
What is the recommended die-attach material for SIGC18T60NCX1SA4?
Infineon specifies electrically conductive adhesive or soft solder (e.g., SnAgCu or PbSn) for collector-side die bonding. The Ni–Ag backside metallization is qualified for both methods; thermal interface resistance and long-term reliability are optimized using 25–50 µm bond line thickness and controlled reflow profiles.
Does SIGC18T60NCX1SA4 include integrated anti-parallel diode functionality?
No. SIGC18T60NCX1SA4 is an IGBT die only, without monolithically integrated freewheeling diode. Module designers must pair it with discrete ultrafast recovery diodes (e.g., IDP20E65D1) or use co-packaged diode dies in the same module substrate.
Can SIGC18T60NCX1SA4 be used in 650 V DC-link applications?
No. Its absolute maximum VCE rating is 600 V with no safety margin specified for 650 V DC-link operation. For 650 V systems, Infineon recommends 650 V-rated dies such as IKW20N65ES5 or FGHL40T65SQD, which guarantee 50 V headroom under transient overvoltage conditions.
SIGC18T60NCX1SA4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 20 A
- Current - Collector Pulsed (Icm):
- 60 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 20A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- 21ns/110ns
- Test Condition:
- 300V, 20A, 13Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC18T60NCX1SA4 FAQ
1.How can I place an order for SIGC18T60NCX1SA4 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC18T60NCX1SA4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC18T60NCX1SA4 reliable?
The price and inventory of SIGC18T60NCX1SA4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC18T60NCX1SA4 is usually 5 days.
3.What payment methods are accepted for SIGC18T60NCX1SA4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC18T60NCX1SA4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC18T60NCX1SA4?
SIGC18T60NCX1SA4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC18T60NCX1SA4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC18T60NCX1SA4?
For technical support, including SIGC18T60NCX1SA4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC18T60NCX1SA4 requirements.
6.How does Aetrix verify that SIGC18T60NCX1SA4 is sourced from the original manufacturer or authorized distributors?
All SIGC18T60NCX1SA4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC18T60NCX1SA4 meets industry standards.
7.What is the process for return or replacement of SIGC18T60NCX1SA4?
All SIGC18T60NCX1SA4 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC18T60NCX1SA4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC18T60NCX1SA4 part is unused and in its original packaging.
Return procedure for SIGC18T60NCX1SA4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIGC18T60NCX1SA4 Tags
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