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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC18T60NCX1SA5

Name: SIGC18T60NCX1SA5
Brand: Infineon Technologies
SKU: SIGC18T60NCX1SA5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC18T60NCX1SA5

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC18T60NCX1SA5.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:7,001

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Product details

Overview

SIGC18T60NCX1SA5 from Infineon Technologies is a 600 V, 20 A NPT (Non-Punch-Through) IGBT bare die optimized for high-reliability industrial motor drives. It features a 4.3 × 4.3 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, and V_CE(sat) = 2.0 V (typ.) at I_C = 20 A and V_GE = 15 V. Used in compact IGBT modules for variable-frequency drives.

For engineers reviewing the SIGC18T60NCX1SA5 datasheet, SIGC18T60NCX1SA5 pinout (emitter/gate/collector terminals), SIGC18T60NCX1SA5 application in motor drive modules, or SIGC18T60NCX1SA5 equivalent bare-die IGBTs, this page delivers verified die-level specifications, thermal and switching behavior, mechanical layout, and module integration guidance - all grounded in Infineon's official chip data sheet L7242-M Edition 2.

Technical Context

This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 5.5 V (typ.), exhibits low dynamic losses via C_iss = 900 pF and C_rss = 80 pF (f = 1 MHz), and supports fast switching with t_d(off) = 110 ns and t_f = 25 ns under rated inductive load conditions (V_CC = 300 V, I_C = 20 A, T_j = 125 °C).

The die integrates Al–Si (1%) emitter metallization (3200 nm), Ni–Ag collector metallization (1400 nm), and photoimide frontside passivation - enabling compatibility with epoxy and soft-solder die bonding. Its 270° flat position and ∅0.65 mm ink dot support automated die placement and traceability in module assembly.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage defines use in 400 V AC input motor drives with 2× DC bus margin.
I_C (DC)	20 A - Rated continuous collector current at T_jmax, sets thermal design baseline for module heatsink sizing.
V_CE(sat)	2.0 V (typ.) - Low saturation voltage reduces conduction loss and improves efficiency at full-load operation.
V_GE(th)	5.5 V (typ.) - Threshold voltage ensures robust noise immunity and predictable turn-on behavior in noisy drive environments.
t_d(off)	110 ns - Turn-off delay time directly impacts switching loss and maximum PWM frequency capability in inverter stages.
T_j range	−55 to +150 °C - Wide junction temperature range enables operation in harsh industrial enclosures without derating.
C_iss	900 pF - Input capacitance determines gate drive power requirement and influences Miller effect susceptibility.

Pinout & Package

Package: Bare die (unmounted silicon chip), 4.3 × 4.3 mm² outline, 100 µm thickness, sawn on foil, Q67050-A4139-A001 footprint. Not housed in leaded or surface-mount package.

Pin/Terminal	Circuit Role	Design Meaning
Emitter pad (2.48 × 2.98 mm²)	Low-side current return path	Large-area Al–Si metallization supports 20 A DC current and minimizes bond-wire count in module assembly.
Gate pad (0.7 × 1.08 mm²)	Control terminal for channel modulation	Small, defined geometry ensures consistent gate resistance and reliable wire bonding with ≤500 µm Al wire.
Collector metallization (Ni–Ag)	High-voltage power output node	Thick Ni–Ag layer provides low-resistance, solder-compatible interface for direct attachment to DBC substrate or copper baseplate.

Key Features

Feature	Design Value
Positive temperature coefficient	Enables inherently stable current sharing when paralleling multiple dies in high-power modules without external balancing resistors.
NPT technology	Provides balanced trade-off between switching speed and ruggedness, supporting short-circuit withstand time >10 µs at 125 °C.
Photoimide passivation	Ensures high dielectric strength (>1000 V/µm) and moisture resistance during encapsulation and long-term module operation.
150 mm wafer process	Supports high-yield production with up to 796 functional dies per wafer, contributing to cost-effective module manufacturing.

Applications

Industrial Motor Drives

Pump & Compressor Inverters

Use Scenario: Three-phase inverter stage in HVAC or industrial pump systems operating from 380–480 V AC mains.

IC Role / Device Role / Timing Role: Main switching device in 6-pulse inverter bridge, handling 20 A RMS output current at 4 kHz PWM.

Use Value: Low V_CE(sat) and stable V_GE(th) reduce thermal stress and improve system efficiency by ≥1.2% versus older PT-IGBT dies.

Use Scenario: Compact, sealed compressor module for refrigeration requiring high reliability over 10-year lifetime.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration, subjected to repetitive 600 V blocking and 25 ns fall time demands.

Use Value: NPT structure and 150 °C max T_j rating enable sustained operation under high ambient temperatures without forced cooling.

Elevator Control Systems

Conveyor Drive Modules

Use Scenario: Regenerative braking unit in multi-floor elevator hoist drives with frequent start-stop cycles.

IC Role / Device Role / Timing Role: Bidirectional energy transfer switch in active front-end rectifier, conducting reverse current during regeneration.

Use Value: Positive temperature coefficient ensures uniform current distribution across paralleled dies during high-current regen pulses.

Use Scenario: Modular conveyor drive rated for continuous 15 kW output in factory automation lines.

IC Role / Device Role / Timing Role: Low-inductance, bonded-die IGBT in press-pack or solder-bonded module, optimized for <100 ns switching transitions.

Use Value: 900 pF C_iss and 80 pF C_rss minimize gate drive losses and reduce EMI generation in densely packed control cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT bare-die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
FS20R06XL4	Same die (SIGC18T60NC) packaged in 62 mm module with integrated freewheeling diode and standardized footprint.	Pre-assembled module form factor eliminates die attach and wire bonding steps; suited for rapid prototyping and low-volume builds.	Select FS20R06XL4 when module-level validation, UL certification, or reduced assembly risk outweigh bare-die cost savings.
IKB15N60T	600 V, 15 A TRENCHSTOP™ IGBT die with lower V_CE(sat) (1.6 V typ.) but smaller die size (3.2 × 3.2 mm²) and no published C_rss data.	Better conduction efficiency at partial load; limited short-circuit ruggedness (6 µs) vs. SIGC18T60NC's NPT-rated 10+ µs.	Choose IKB15N60T only for space-constrained, low-short-circuit-risk applications where peak current remains <15 A.

Compared with FS20R06XL4, SIGC18T60NCX1SA5 offers full control over thermal interface and layout but requires qualified die-bonding infrastructure; versus IKB15N60T, it trades slightly higher conduction loss for superior ruggedness and proven parallel stability in high-power industrial inverters.

Availability

SIGC18T60NCX1SA5 is available at Aetrix Electronics and suitable for industrial motor drives, pump & compressor inverters, and elevator control systems requiring stable component supply, long-lifecycle support, and traceable die-level sourcing.

Supply support for SIGC18T60NCX1SA5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing facilities.

SIGC18T60NCX1SA5 belongs to Infineon's high-voltage IGBT die portfolio designed specifically for industrial inverter modules demanding ruggedness, thermal stability, and scalable power density in 600 V class systems.

FAQ

Is SIGC18T60NCX1SA5 a packaged component or bare die?

SIGC18T60NCX1SA5 is a bare silicon die - unmounted, unencapsulated, and supplied on foil. It has no leads, molding compound, or integrated diode. Users must perform die attach (conductive epoxy or solder), wire bonding (Al ≤500 µm), and encapsulation within a custom or standard module housing.

What is the recommended die bonding method for SIGC18T60NCX1SA5?

Infineon specifies electrically conductive glue or soft solder for die bonding. The Ni–Ag collector metallization is compatible with both Sn–Ag–Cu solder and silver-filled epoxies. Thermal interface material selection must ensure ≤0.5 °C/W junction-to-baseplate resistance for 20 A operation at 150 °C T_j.

Does SIGC18T60NCX1SA5 include an integrated freewheeling diode?

No. SIGC18T60NCX1SA5 is a single NPT IGBT die without any integrated diode. External freewheeling diodes - either discrete or co-packaged in module designs - must be used in inductive load applications to provide current recirculation paths during turn-off.

What is the maximum allowable gate resistor value for reliable switching?

With R_G = 13 Ω specified in the switching test condition, increasing R_G beyond 22 Ω significantly extends t_d(off) and t_f, raising switching losses. For 4 kHz PWM operation, R_G should remain between 10 Ω and 18 Ω to balance loss, EMI, and short-circuit robustness per Infineon's application note AN2002-05.

SIGC18T60NCX1SA5 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 20 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 20A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 21ns/110ns

Test Condition:: 300V, 20A, 13Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC18T60NCX1SA5 FAQ

1.How can I place an order for SIGC18T60NCX1SA5 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC18T60NCX1SA5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC18T60NCX1SA5 reliable?

The price and inventory of SIGC18T60NCX1SA5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC18T60NCX1SA5 is usually 5 days.

3.What payment methods are accepted for SIGC18T60NCX1SA5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC18T60NCX1SA5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC18T60NCX1SA5?

SIGC18T60NCX1SA5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC18T60NCX1SA5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC18T60NCX1SA5?

For technical support, including SIGC18T60NCX1SA5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC18T60NCX1SA5 requirements.

6.How does Aetrix verify that SIGC18T60NCX1SA5 is sourced from the original manufacturer or authorized distributors?

All SIGC18T60NCX1SA5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC18T60NCX1SA5 meets industry standards.

7.What is the process for return or replacement of SIGC18T60NCX1SA5?

All SIGC18T60NCX1SA5 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC18T60NCX1SA5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC18T60NCX1SA5 part is unused and in its original packaging.

Return procedure for SIGC18T60NCX1SA5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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