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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC18T60SNCX1SA2

Name: SIGC18T60SNCX1SA2
Brand: Infineon Technologies
SKU: SIGC18T60SNCX1SA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC18T60SNCX1SA2

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC18T60SNCX1SA2.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIGC18T60SNC from Infineon Technologies is a 600 V, 20 A NPT (Non-Punch-Through) IGBT bare die optimized for motor drive inverters, featuring 1.9 V typical V_CE(sat) at 20 A, 100 µm chip thickness, and short-circuit ruggedness up to 10 µs. It is designed for use in SGP20N60 TO-220 packaged modules and supports parallel operation due to its positive temperature coefficient of V_CE(sat).

For engineers reviewing the SIGC18T60SNC datasheet, SIGC18T60SNC pinout (emitter/gate/collector terminals), SIGC18T60SNC application in industrial motor drives, or SIGC18T60SNC equivalent bare-die IGBTs, this page delivers verified die-level specifications, thermal and switching performance data, and validated alternatives for high-reliability power conversion designs.

Technical Context

This NPT-technology IGBT die integrates a 4.3 × 4.3 mm² active area (14.3 mm²) on a 100 µm-thick silicon substrate with photoimide passivation and Al–Si (1%) emitter metallization. Its gate-emitter threshold voltage (V_GE(th)) ranges 3–5 V, and it exhibits 63–76 ns fall time under 400 V, 20 A inductive switching with 16 Ω gate resistance.

The die supports epoxy or soft-solder die bonding via electrically conductive glue or solder, with Al wire bonding ≤500 µm. Its collector metallization uses Ni–Ag system, enabling robust thermal and electrical interface integrity in high-power discrete assemblies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage; defines suitability for 400 V DC bus industrial drives.
I_C	20 A - Continuous collector current at T_jmax; sets thermal design baseline for heatsink sizing.
V_CE(sat)	1.9 V typ. @ 15 V V_GE, 20 A - Directly determines conduction loss and junction temperature rise.
t_f	63–76 ns @ T_j = 150 °C - Critical for EMI control and switching loss optimization in 10–20 kHz inverters.
C_iss	1100–1320 pF - Impacts gate drive power requirement and Miller effect sensitivity.
Short-circuit withstand	10 µs - Enables hardware-level fault protection without external desaturation circuitry.
Die size	4.3 × 4.3 mm² (18.49 mm² total, 14.3 mm² active) - Determines current density and thermal spreading capability.

Pinout & Package

Package: Bare die (unmounted silicon chip), 4.3 × 4.3 mm² outline, 100 µm thickness, sawn-on-foil (Q67041-S2856-A001) or unsawn (Q67041-S2856-A002) variants. No leadframe or molded package - requires custom die attach and wire bonding.

Pin/Terminal	Circuit Role	Design Meaning
Emitter pad (2.48 × 2.98 mm²)	Low-side current return path	Primary heat sink interface; large Al–Si metallization enables low-resistance bond and thermal dissipation.
Gate pad (0.7 × 1.08 mm²)	Control electrode	Small-area, low-capacitance interface for fast, low-energy gate driving; compatible with ≤500 µm Al wire bonds.
Collector metallization (Ni–Ag)	High-voltage output terminal	Robust, solderable surface for high-current collector connection; supports epoxy or soft-solder die bonding.

Key Features

Feature	Design Value
NPT technology	Enables balanced trade-off between conduction loss and switching speed without tail current, reducing snubber requirements.
Positive V_CE(sat) tempco	Ensures inherent current sharing in paralleled dies without external balancing resistors or active gate control.
10 µs short-circuit rating	Allows integration into drive systems with fixed-time fault shutdown, eliminating need for complex desat detection circuits.
Photoimide passivation	Provides high-voltage isolation and moisture resistance for reliable long-term operation in humid industrial environments.
Ni–Ag collector metallization	Supports both epoxy adhesive and soft-solder die attach, enabling flexibility in module assembly processes.

Applications

Industrial Motor Drives

UPS Inverters

Use Scenario: Three-phase 400 V AC variable-frequency drives for pumps, fans, and conveyors.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 20 A RMS output with 10–16 kHz PWM.

Use Value: 1.9 V V_CE(sat) reduces conduction loss by ~12% vs. comparable 600 V trench IGBTs at 25 °C junction, lowering heatsink cost.

Use Scenario: Online double-conversion UPS systems requiring high efficiency and reliability.

IC Role / Device Role / Timing Role: Output stage IGBT in DC–AC inverter; switches at 12 kHz with tight dead-time control.

Use Value: 63–76 ns fall time enables precise zero-voltage switching alignment, reducing transformer stress and audible noise.

Solar String Inverters

Induction Heating Systems

Use Scenario: Single-phase string inverters with 600 V DC input and grid-tied output.

IC Role / Device Role / Timing Role: DC–AC bridge switch; operates with unipolar modulation and bidirectional current flow.

Use Value: Short-circuit ruggedness allows direct integration into fault-tolerant architectures without additional crowbar circuits.

Use Scenario: Medium-frequency (20–50 kHz) resonant heating coils for metal hardening.

IC Role / Device Role / Timing Role: Half-bridge switch handling repetitive 20 A peak currents with high di/dt.

Use Value: Positive temperature coefficient ensures stable current sharing across multiple dies in multi-kW parallel modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRGB20B60KD1	600 V, 20 A, PT-type die; 2.2 V V_CE(sat) typ.; no short-circuit rating specified.	Lacks 10 µs short-circuit withstand; requires external desat detection for fault protection.	Preferred where lower gate charge (Q_g = 65 nC) outweighs ruggedness needs.
IXYS IXGN20N60B3	600 V, 20 A, NPT die; 1.8 V V_CE(sat) typ.; 6 µs short-circuit rating.	Reduced short-circuit capability limits safe operating area in high-energy fault conditions.	Selected when faster turn-off (t_f = 55 ns) is prioritized over fault margin.

Compared with IRGB20B60KD1 and IXGN20N60B3, SIGC18T60SNC provides superior short-circuit ruggedness and thermal stability for industrial drives where fault immunity and parallel scalability are critical, despite slightly higher V_CE(sat) than IXYS.

Availability

SIGC18T60SNC is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, solar string inverters, and induction heating systems requiring stable component supply and traceable bare-die sourcing.

Supply support for SIGC18T60SNC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and wafer fabrication facilities.

SIGC18T60SNC belongs to Infineon's high-voltage NPT IGBT die portfolio, engineered for industrial power modules demanding ruggedness, thermal stability, and scalable paralleling in 400–600 V DC bus applications.

FAQ

Is SIGC18T60SNC supplied in tape-and-reel or waffle pack?

No - SIGC18T60SNC is delivered as bare die on foil (A001) or unsawn wafer segments (A002), not in standard packaging formats. It requires manual or automated die placement equipment and is shipped in nitrogen-purged containers per Infineon's storage specification (<6 months at 23 °C).

What is the maximum allowable gate resistor value for reliable switching?

Based on measured t_d(off) and t_f data, a 16 Ω gate resistor is validated for 400 V, 20 A inductive switching. Exceeding 22 Ω risks exceeding 10 µs short-circuit safe operating area and increases switching losses disproportionately.

Can SIGC18T60SNC be used with aluminum wire bonding only?

Yes - the gate and emitter pads are qualified for Al wire bonding ≤500 µm. The Ni–Ag collector metallization also supports Al bonding, though Cu or Au wires require process validation due to intermetallic formation risk.

Does this die include an integrated anti-parallel diode?

No - SIGC18T60SNC is a standalone IGBT die without monolithically integrated freewheeling diode. External ultrafast diodes (e.g., IDP20E65D1) must be co-packaged or PCB-mounted for inductive load commutation.

SIGC18T60SNCX1SA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 20 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 20A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 36ns/250ns

Test Condition:: 400V, 20A, 16Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC18T60SNCX1SA2 FAQ

1.How can I place an order for SIGC18T60SNCX1SA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC18T60SNCX1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC18T60SNCX1SA2 reliable?

The price and inventory of SIGC18T60SNCX1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC18T60SNCX1SA2 is usually 5 days.

3.What payment methods are accepted for SIGC18T60SNCX1SA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC18T60SNCX1SA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC18T60SNCX1SA2?

SIGC18T60SNCX1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC18T60SNCX1SA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC18T60SNCX1SA2?

For technical support, including SIGC18T60SNCX1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC18T60SNCX1SA2 requirements.

6.How does Aetrix verify that SIGC18T60SNCX1SA2 is sourced from the original manufacturer or authorized distributors?

All SIGC18T60SNCX1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC18T60SNCX1SA2 meets industry standards.

7.What is the process for return or replacement of SIGC18T60SNCX1SA2?

All SIGC18T60SNCX1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC18T60SNCX1SA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC18T60SNCX1SA2 part is unused and in its original packaging.

Return procedure for SIGC18T60SNCX1SA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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