Infineon Technologies SIGC18T60SNCX1SA4

Overview

SIGC18T60SNC from Infineon Technologies is a 600 V, 20 A NPT (Non-Punch-Through) IGBT die in bare-die form, designed for high-voltage switching in motor drives and industrial inverters. It features 100 µm thickness, positive temperature coefficient for stable paralleling, short-circuit ruggedness, and 4.3 × 4.3 mm² active die area. Used in SGP20N60 TO-220 packaged modules.

For engineers reviewing the SIGC18T60SNC datasheet, SIGC18T60SNC pinout (emitter/gate/collector terminals), SIGC18T60SNC application in motor drives or industrial inverters, or SIGC18T60SNC equivalent bare-die IGBTs, this page delivers verified die-level specifications, thermal and switching behavior, and direct integration guidance for discrete power module assembly.

Technical Context

This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 3–5 V and exhibits a collector-emitter saturation voltage of 1.6–2.5 V at 20 A and 15 V gate drive. Its dynamic performance includes 36–46 ns turn-on delay and 250–300 ns turn-off delay under 400 V, 20 A inductive load conditions with 16 Ω gate resistor.

The die integrates photoimide passivation, Al–Si (1%) emitter metallization (3200 nm), and Ni–Ag collector metallization (1400 nm), enabling reliable epoxy or soft-solder die bonding. It supports ≤500 µm aluminum wire bonding and is rated for operation from –55 °C to +150 °C junction temperature.

Key Specifications

Pinout & Package

Package: Bare die (unmounted silicon chip), sawn on foil (Q67041-S2856-A001) or unsawn (Q67041-S2856-A002), 100 µm thick, 150 mm wafer, flat position 270°.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPT IGBT die applications.

Compared with IKB15N60T and FGH60N60SMD, SIGC18T60SNC uniquely balances 20 A current handling, 10 µs short-circuit ruggedness, and NPT thermal stability-making it optimal for cost-sensitive, reliability-critical industrial inverter modules where die-level customization is required.

Availability

SIGC18T60SNC is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply and traceable bare-die sourcing.

Supply support for SIGC18T60SNC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

SIGC18T60SNC belongs to Infineon's legacy NPT IGBT die portfolio, engineered specifically for high-reliability, medium-power industrial inverters where ruggedness and parallel scalability outweigh ultra-high-frequency optimization.

FAQ

What is the recommended gate resistor value for SIGC18T60SNC in a 16 kHz motor drive?

A 16 Ω gate resistor is validated per Infineon's test conditions (T_j = 150 °C, V_CC = 400 V, I_C = 20 A) and yields 250–300 ns turn-off delay. Lower values (e.g., 10 Ω) reduce switching time but increase dI/dt-induced voltage overshoot and EMI; higher values improve EMI but raise switching losses. Layout parasitics must be minimized regardless of R_G choice.

Can SIGC18T60SNC be die-bonded using conductive epoxy instead of solder?

Yes-Infineon explicitly qualifies SIGC18T60SNC for both electrically conductive glue and soft-solder die bonding. Conductive epoxy is acceptable for lower-power or thermally non-critical assemblies, but solder (e.g., PbSn or Ag-based) is preferred for high-reliability, high-thermal-load applications due to superior thermal conductivity and long-term interfacial stability.

Is the emitter pad the primary thermal path for this die?

No-the emitter pad is not the primary thermal path. The collector is metallized on the backside and serves as the main thermal interface when mounted face-down onto a heatsink or DBC substrate. The emitter pad (front-side) is electrically isolated from thermal sinking unless a dual-sided cooling structure is used; standard mounting relies on backside collector-to-heatsink conduction.

Does SIGC18T60SNC require negative gate voltage for safe turn-off?

No-SIGC18T60SNC is rated for V_GE = ±20 V maximum, but turn-off is fully functional at 0 V gate voltage. A negative gate bias (e.g., –5 V) is not required and offers no reliability benefit for this NPT die. However, applying –5 V can marginally improve noise immunity in high-dV/dt environments, provided gate driver capability and layout allow it.