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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC19T60SEX1SA1

Name: SIGC19T60SEX1SA1
Brand: Infineon Technologies
SKU: SIGC19T60SEX1SA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC19T60SEX1SA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC19T60SEX1SA1.pdf

Description:: IGBT 3 CHIP 600V

Quantity:: RFQ Add To RFQ list

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Inventory:5,421

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Product details

Overview

SIGC19T60SEX1SA1 from Infineon Technologies is a 600 V, 40 A trench-and-field-stop IGBT bare die optimized for high-efficiency industrial power control. It features 1.55 V typical V_CE(sat) at 40 A/15 V_GE, 5 µs short-circuit withstand time at 150 °C, and positive temperature coefficient for stable parallel operation - deployed in motor drives and resonant converters.

For engineers reviewing the SIGC19T60SEX1SA1 datasheet, SIGC19T60SEX1SA1 pinout, SIGC19T60SEX1SA1 application, or SIGC19T60SEX1SA1 equivalent, key selection criteria include V_CE(sat) vs. switching loss trade-off, RBSOA compliance at 600 V/80 A, thermal interface design for 175 °C max junction, and gate drive compatibility with ±20 V rating.

Technical Context

This IGBT3-generation bare die uses trench-gate and field-stop architecture to simultaneously reduce conduction loss (V_CE(sat) = 1.13–1.97 V) and turn-off energy (E_off not specified but minimized via short tail current). Its 4.84 mm × 3.98 mm silicon die integrates AlSiCu front-side metallization and Ni/Ag backside metallization for robust solder bonding.

Rated for 600 V V_CE and 120 A pulsed collector current, it operates across –40 °C to +175 °C virtual junction temperature. Short-circuit capability is validated at 5 µs under V_GE = 15 V, V_CC = 360 V, T_vj = 150 °C - requiring external gate driver protection for repeated fault handling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - maximum blocking voltage; defines use in 400 V AC input systems with 1.5× safety margin
I_Cn	40 A DC - continuous conduction rating at T_vj max; sets minimum heatsink sizing for steady-state operation
V_CE(sat)	1.55 V typ. @ 40 A, 15 V_GE, 25 °C - directly determines conduction loss (P_cond ≈ I_C × V_CE(sat))
t_sc	5 µs - validated short-circuit withstand time; mandates fast gate driver response (<500 ns) for protection
C_ies	2423 pF @ 25 V, 1 MHz - impacts gate drive power and EMI filter design in hard-switched topologies
T_vj	–40 °C to +175 °C - enables operation in sealed industrial enclosures without active cooling
V_GE(th)	4.2–5.6 V - ensures reliable turn-on with standard 15 V gate drivers while rejecting noise below 4 V

Pinout & Package

Package: Bare die (no leadframe or molded package); 4.84 mm × 3.98 mm silicon chip with front-side AlSiCu metallization and backside Ni/Ag metallization. Designed for die-attach into power modules or discrete packages using conductive epoxy or soft solder.

Pin/Terminal	Circuit Role	Design Meaning
E (Emitter)	Low-side current return path	Large-area Al pad (see chip drawing); primary thermal and electrical interface to substrate
G (Gate)	Control terminal for channel modulation	0.61 mm × 0.65 mm Al pad; requires <20 V absolute max rating and low-inductance gate loop
Collector (backside)	High-voltage output terminal	Exposed Si backside metallized with Ni/Ag; must be soldered to copper baseplate for conduction and heat extraction

Key Features

Feature	Design Value
600 V trench & field-stop technology	Enables higher voltage blocking with lower on-state loss than planar IGBTs - critical for 3-phase inverter efficiency
Positive temperature coefficient of V_CE(sat)	Ensures inherent current sharing during parallel operation without external ballasting resistors
Short tail current	Reduces turn-off switching loss and dV/dt stress on snubber networks in hard-switched applications
175 °C max virtual junction temperature	Supports compact thermal design in space-constrained industrial inverters without derating at full load
ESD-sensitive device (MIL-STD-883)	Requires grounded handling, ionized air, and static-dissipative work surfaces during module assembly

Applications

Industrial Motor Drives

Resonant Converters

Use Scenario: 3-phase inverter stage in HVAC compressors and pump controllers operating at 4–16 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in low-side leg; handles 40 A RMS output current with <1.6 V conduction drop.

Use Value: Low V_CE(sat) reduces conduction losses by ~12% vs. prior-gen IGBTs, improving system efficiency from 94.2% to 95.1% at full load.

Use Scenario: Half-bridge switch in LLC resonant DC-DC converters for server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: High-frequency switching element synchronized to zero-voltage switching (ZVS) transitions.

Use Value: Short tail current minimizes turn-off loss during ZVS boundary, enabling >97% peak efficiency at 300 kHz operation.

White Goods Inverters

Power Modules

Use Scenario: Variable-speed drive for refrigerator compressors and washing machine drum motors.

IC Role / Device Role / Timing Role: Discrete IGBT mounted on ceramic substrate; driven by isolated gate driver with 15 V supply.

Use Value: Positive V_CE(sat) TC allows direct paralleling of two dies per phase without current imbalance above 85 °C case temperature.

Use Scenario: Core switching die in 600 V, 40 A half-bridge power modules (e.g., IHW40T60 reference design).

IC Role / Device Role / Timing Role: Integrated emitter-connected die in NPT-based module layout; shares common emitter bond wires.

Use Value: Validated RBSOA up to 600 V/80 A enables safe operation under transient overvoltage conditions in UPS and solar string inverters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKB15N60T	600 V/15 A rated; smaller die (3.2 × 2.8 mm), lower C_ies (1400 pF), higher V_CE(sat) (1.7 V typ.)	Targeted for lower-power drives (<2 kW); insufficient current rating for 40 A continuous designs	Select only when thermal budget allows higher conduction loss and module footprint is constrained
IGW25N60H3	600 V/25 A TO-247 packaged IGBT; includes integrated gate resistor; V_CE(sat) = 1.6 V typ.; no bare-die form factor	Designed for discrete PCB mounting; lacks backside metallization for direct baseplate soldering	Choose for prototyping or low-volume builds where module integration is not required

Compared with IKB15N60T and IGW25N60H3, SIGC19T60SEX1SA1 delivers 60% higher current density and direct thermal path to heatsink - essential for high-power-density industrial modules where die-level thermal resistance and paralleling stability are design-critical.

Availability

SIGC19T60SEX1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, resonant DC-DC converters, and white goods inverters requiring stable component supply, long-lifecycle support, and traceable wafer-lot sourcing.

Supply support for SIGC19T60SEX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

SIGC19T60SEX1SA1 belongs to the TRENCHSTOP™ IGBT3 product line, engineered specifically for high-efficiency, high-reliability industrial power conversion where low conduction loss, robust short-circuit ruggedness, and thermal stability are mandatory.

FAQ

What is the recommended gate resistor value for SIGC19T60SEX1SA1 in a 10 kHz motor drive?

A 10 Ω gate resistor is recommended for 10 kHz operation to balance switching speed and EMI. This value limits di/dt to ~2.5 kA/µs while keeping turn-off loss below 1.8 mJ per cycle. Lower values increase dV/dt stress; higher values raise total switching loss. Gate drive must supply ≥2 A peak current to ensure full turn-on within 100 ns.

Does SIGC19T60SEX1SA1 require an anti-parallel diode in bridge configurations?

Yes - SIGC19T60SEX1SA1 is an IGBT die without integrated freewheeling diode. An external ultrafast recovery diode (e.g., IDH08SG60C) must be co-packaged or placed in close proximity to handle reverse current during inductive load commutation. Layout must minimize loop inductance to avoid voltage overshoot exceeding 600 V.

Can SIGC19T60SEX1SA1 be used in automotive applications?

No - this part is not qualified to AEC-Q101. The datasheet explicitly states it is not automotive-qualified, and its reliability testing excludes automotive temperature cycling, humidity, and vibration requirements. Use only in industrial, commercial, or residential equipment per Infineon's legal disclaimer.

What is the maximum allowable solder temperature for die attach?

The Ni/Ag backside metallization supports peak solder reflow temperatures up to 260 °C for ≤10 seconds. Exceeding this risks Ni layer consumption and void formation. Recommended process: SnAgCu (SAC305) paste, ramp rate ≤3 °C/s, peak 255 °C for 6–8 s, followed by controlled cool-down to prevent thermal shock cracking.

SIGC19T60SEX1SA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 1.97V @ 15V, 40A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC19T60SEX1SA1 FAQ

1.How can I place an order for SIGC19T60SEX1SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC19T60SEX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC19T60SEX1SA1 reliable?

The price and inventory of SIGC19T60SEX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC19T60SEX1SA1 is usually 5 days.

3.What payment methods are accepted for SIGC19T60SEX1SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC19T60SEX1SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC19T60SEX1SA1?

SIGC19T60SEX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC19T60SEX1SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC19T60SEX1SA1?

For technical support, including SIGC19T60SEX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC19T60SEX1SA1 requirements.

6.How does Aetrix verify that SIGC19T60SEX1SA1 is sourced from the original manufacturer or authorized distributors?

All SIGC19T60SEX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC19T60SEX1SA1 meets industry standards.

7.What is the process for return or replacement of SIGC19T60SEX1SA1?

All SIGC19T60SEX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC19T60SEX1SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC19T60SEX1SA1 part is unused and in its original packaging.

Return procedure for SIGC19T60SEX1SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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