Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC25T60NCX1SA2

Name: SIGC25T60NCX1SA2
Brand: Infineon Technologies
SKU: SIGC25T60NCX1SA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIGC25T60NCX1SA2

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC25T60NCX1SA2.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,583

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIGC25T60NCX1SA2 from Infineon Technologies is a 600 V, 30 A NPT (Non-Punch-Through) IGBT bare die optimized for high-efficiency motor drives and industrial inverters. It features a 100 µm chip thickness, positive temperature coefficient for stable parallel operation, 4.5 × 5.71 mm² die area, and Al–Si 1% emitter metallization. The device is designed for use in epoxy or soft-solder die-bonded modules operating up to +150 °C junction temperature.

For engineers reviewing the SIGC25T60NCX1SA2 datasheet, SIGC25T60NCX1SA2 pinout (emitter/gate/collector terminals), SIGC25T60NCX1SA2 application in motor drive modules, or SIGC25T60NCX1SA2 equivalent bare-die IGBTs, this page provides verified die-level specifications, thermal and switching performance data, mechanical layout details, and validated alternatives for module design and qualification.

Technical Context

This NPT-technology IGBT die delivers low conduction loss with V_CE(sat) = 1.7–2.5 V at 30 A and 15 V gate drive, and exhibits robust short-circuit ruggedness due to its 100 µm thickness and photoimide passivation. Its positive temperature coefficient of V_CE(sat) enables inherently stable current sharing in paralleled configurations without external current-sharing resistors.

Dynamic behavior is characterized by t_d(off) = 110 ns and t_f = 25 ns under 300 V, 30 A, T_j = 125 °C conditions with 8.2 Ω gate resistor - enabling high-frequency switching up to ~20 kHz in hard-switched industrial inverters while maintaining manageable E_off and dv/dt control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	600 V DC - supports 400 V AC input rectified bus systems with 50 % voltage margin for transients
I_C (DC)	30 A - defines continuous current capability at T_j = 125 °C with appropriate heatsinking
V_CE(sat)	1.7–2.5 V @ 30 A, 15 V - determines conduction loss and thermal load in output stage
V_GE(th)	4.5–6.5 V - ensures reliable turn-on with standard ±15 V gate drivers and noise immunity
t_d(off) + t_f	135 ns typical - sets minimum practical switching period and influences E_off and EMI
T_j Range	−55 to +150 °C - enables operation in harsh industrial environments including enclosed drives
Die Size	4.5 × 5.71 mm² - fits standard 34 mm × 34 mm module footprints with adequate creepage/clearance

Pinout & Package

SIGC25T60NCX1SA2 is supplied as a bare die in sawn-on-foil format (Q67050-A4143-A001), with no leadframe or molded package. Terminal identification follows standard IGBT die layout: top-side emitter and gate pads, bottom-side collector metallization. Die bonding requires electrically conductive adhesive or solder.

Pin/Terminal	Circuit Role	Design Meaning
Emitter Pad (2×)	Current return path for main power loop	Two 2.18 × 1.58 mm² Al–Si pads reduce bond wire inductance and improve current distribution
Gate Pad	Control signal interface	0.68 × 1.08 mm² pad sized for ≤500 µm Al wire bonding; compatible with standard wedge bonders
Collector (Backside)	Main power output terminal	Ni–Ag metallization enables reliable epoxy or soft-solder attachment to DBC substrates

Key Features

Feature	Design Value
NPT technology	Enables balanced trade-off between V_CE(sat), switching speed, and short-circuit withstand time without field-stop layer complexity
Positive V_CE(sat) tempco	Eliminates need for active current balancing in multi-die modules - simplifies thermal design and improves reliability
Photoimide passivation	Provides robust moisture and ion contamination resistance for long-term stability in humid industrial enclosures
100 µm chip thickness	Optimized for thermal conductivity and mechanical handling yield during module assembly - avoids fragility of ultra-thin dies

Applications

Industrial Motor Drives

UPS Inverters

Use Scenario: Three-phase 7.5 kW variable-frequency drive for HVAC compressors operating at 4 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main switching element in inverter leg; handles 30 A RMS output current with <1.9 V conduction drop.

Use Value: Positive tempco enables direct paralleling of two dies per switch position without current-sharing resistors, reducing BOM count and thermal footprint.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 400 VDC bus with <5 % THD.

IC Role / Device Role / Timing Role: Output stage IGBT in full-bridge inverter; switched at 8 kHz with snubberless operation.

Use Value: 135 ns total turn-off time allows precise dead-time control and minimizes distortion at high output frequencies.

Solar String Inverters

Induction Heating Generators

Use Scenario: 5 kW single-phase transformerless string inverter with unipolar modulation and 20 kHz switching.

IC Role / Device Role / Timing Role: High-side and low-side switch in H-bridge; subjected to repetitive 600 V blocking and 25 A peak current.

Use Value: 600 V rating with 2.1 µA I_CES ensures low leakage and high efficiency during MPPT idle periods.

Use Scenario: 15 kW resonant inverter driving 20 kHz induction coil for metal hardening.

IC Role / Device Role / Timing Role: Hard-switched half-bridge switch; operates with high dv/dt and repetitive short-circuit stress.

Use Value: NPT structure provides inherent short-circuit ruggedness up to 10 µs at 125 °C - eliminates need for complex desaturation protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N60B3	600 V, 30 A trench-gate PT IGBT; lower V_CE(sat) (1.5 V typ), but negative tempco and higher C_oss	Requires active current balancing in parallel; less suitable for high-temp ambient modules	Prefer when lowest conduction loss is critical and thermal derating margin exists
STMicroelectronics STGP30H60DF	600 V, 30 A field-stop IGBT; faster switching (t_f = 18 ns), but higher E_off and narrower SOA	Better for >25 kHz resonant topologies; not recommended for hard-switched 400 V bus with high di/dt	Choose when prioritizing switching speed over short-circuit ruggedness and thermal stability

Compared with IXGN30N60B3 and STGP30H60DF, SIGC25T60NCX1SA2 trades slightly higher V_CE(sat) for superior thermal stability, simpler paralleling, and proven ruggedness in industrial drive modules - making it optimal for cost-sensitive, high-reliability 4–10 kHz inverter designs.

Availability

SIGC25T60NCX1SA2 is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, solar string inverters, and induction heating generators requiring stable component supply and long-lifecycle support.

Supply support for SIGC25T60NCX1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

SIGC25T60NCX1SA2 belongs to Infineon's legacy high-voltage IGBT die portfolio targeting discrete module builders; it was engineered specifically for cost-effective, thermally robust industrial inverter platforms requiring field-proven reliability.

FAQ

Is SIGC25T60NCX1SA2 supplied with solder preform or die attach film?

No. SIGC25T60NCX1SA2 is delivered as a bare die on foil without any attached die attach material. Users must select and apply electrically conductive adhesive or soft-solder paste per their module assembly process and thermal requirements. Ni–Ag backside metallization is qualified for both epoxy and SnPb or Pb-free solder bonding.

What is the maximum allowable gate resistor value for reliable switching?

Based on measured t_d(off) = 110 ns and t_f = 25 ns with R_G = 8.2 Ω, increasing R_G beyond 15 Ω significantly extends turn-off time and increases switching losses. For hard-switched operation above 10 kHz, R_G should remain ≤12 Ω to maintain E_off within thermal limits and avoid excessive dv/dt-induced cross-talk.

Can SIGC25T60NCX1SA2 be used in 650 V DC bus applications?

No. Its absolute maximum V_CE rating is 600 V DC at T_j = 25 °C, derating to ~540 V at T_j = 125 °C. For 650 V bus systems, a 650 V or 750 V rated IGBT die is required to ensure sufficient voltage margin against transients and temperature-dependent breakdown reduction.

Does this die include integrated anti-parallel diode functionality?

No. SIGC25T60NCX1SA2 is an IGBT-only die without monolithically integrated freewheeling diode. Module designers must co-package a separate fast-recovery or SiC Schottky diode with matched thermal characteristics and voltage rating to handle inductive load commutation current.

SIGC25T60NCX1SA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 30A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 21ns/110ns

Test Condition:: 300V, 30A, 8.2Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC25T60NCX1SA2 FAQ

1.How can I place an order for SIGC25T60NCX1SA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC25T60NCX1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC25T60NCX1SA2 reliable?

The price and inventory of SIGC25T60NCX1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC25T60NCX1SA2 is usually 5 days.

3.What payment methods are accepted for SIGC25T60NCX1SA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC25T60NCX1SA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC25T60NCX1SA2?

SIGC25T60NCX1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC25T60NCX1SA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC25T60NCX1SA2?

For technical support, including SIGC25T60NCX1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC25T60NCX1SA2 requirements.

6.How does Aetrix verify that SIGC25T60NCX1SA2 is sourced from the original manufacturer or authorized distributors?

All SIGC25T60NCX1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC25T60NCX1SA2 meets industry standards.

7.What is the process for return or replacement of SIGC25T60NCX1SA2?

All SIGC25T60NCX1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC25T60NCX1SA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC25T60NCX1SA2 part is unused and in its original packaging.

Return procedure for SIGC25T60NCX1SA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…