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Infineon Technologies SIGC25T60NCX1SA4
- Part No.:
- SIGC25T60NCX1SA4
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC25T60NCX1SA4.pdf
- Description:
- IGBT 3 CHIP 600V WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:9,307
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Product details
Overview
SIGC25T60NCX1SA4 from Infineon Technologies is a 600 V, 30 A NPT (Non-Punch-Through) IGBT bare die optimized for industrial motor drives and inverter modules. It features a 100 µm chip thickness, positive temperature coefficient for stable parallel operation, 2.0 V typical VCE(sat) at 30 A/15 VGE, and 1350 pF input capacitance. Used as the core switching element in 3-phase AC drive inverters.
For engineers reviewing the SIGC25T60NCX1SA4 datasheet, SIGC25T60NCX1SA4 pinout, SIGC25T60NCX1SA4 application, or SIGC25T60NCX1SA4 equivalent, key selection criteria include VCE(sat) stability across temperature, gate charge characteristics for 8–20 kHz PWM operation, thermal resistance of die-bonded assembly, and compatibility with epoxy or soft-solder die attach processes.
Technical Context
This IGBT die implements Non-Punch-Through architecture with field-stop layer, enabling 600 V blocking capability while maintaining low conduction loss. Its 4.5 × 5.71 mm² active area and dual 2.18 × 1.58 mm² emitter pads support high-current density and uniform current distribution under pulsed loads up to 90 A.
The device exhibits a 5.5 V typical gate-emitter threshold voltage and ±20 V maximum gate-emitter voltage rating, ensuring robust gate drive margin against transients. Switching performance is characterized with 21 ns turn-on delay, 8 ns rise time, 110 ns turn-off delay, and 25 ns fall time under standardized 300 V/30 A inductive load conditions with 8.2 Ω gate resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE Rating | 600 V - supports DC bus voltages up to 400 VAC line-fed inverters with 1.5× safety margin |
| IC (DC) | 30 A - continuous collector current at Tj = 125°C with appropriate heatsinking and die bond |
| VCE(sat) | 2.0 V typ. @ 30 A, 15 VGE - defines conduction loss and thermal dissipation in hard-switched topologies |
| VGE(th) | 5.5 V typ. - enables reliable turn-on with standard +15 V gate drivers and noise immunity above 2 V |
| Ciss | 1350 pF - determines gate drive power requirement and influences Miller-induced false turn-on risk |
| tf | 25 ns @ Tj = 125°C - sets minimum practical dead-time and limits switching frequency to ≤20 kHz for thermal management |
| Tj Range | −55 °C to +150 °C - enables operation in sealed industrial enclosures without forced air cooling |
Pinout & Package
SIGC25T60NCX1SA4 is supplied as an unmounted bare die in sawn-on-foil format (Q67050-A4143-A001), with no leadframe or molded package. Die dimensions are 4.5 × 5.71 mm², thickness 100 µm, and wafer diameter 150 mm. Bonding requires electrically conductive adhesive or soft solder on collector side and aluminum wire bonding (≤500 µm) to emitter/gate pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter Pad (2×) | Power return path for main current | Dual 2.18 × 1.58 mm² AlSi1% pads enable low-inductance, high-current wire bonding and thermal spreading |
| Gate Pad | Control terminal for MOS-controlled IGBT | 0.68 × 1.08 mm² pad sized for reliable Al wire bonding and low gate loop inductance |
| Collector Surface | Main power output terminal | Backside NiAg metallization compatible with epoxy or soft-solder die attach for thermal and electrical conduction |
Key Features
| Feature | Design Value |
|---|---|
| NPT technology | Enables 600 V blocking with field-stop layer, reducing tail current and improving switching efficiency vs. PT IGBTs |
| Positive temperature coefficient | Ensures inherent current sharing when paralleling multiple dies without external current-balancing resistors |
| 100 µm thin die | Reduces thermal resistance from junction-to-heat-sink interface, critical for high-power density module designs |
| Photoimide passivation | Provides mechanical protection and humidity resistance during die handling and module encapsulation |
| ESD-sensitive classification | Requires MIL-STD-883 compliant handling to prevent gate oxide damage during assembly |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Three-phase 400 VAC input inverter stage powering 5–15 kW induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: Main switching device in 6-pulse inverter bridge; operates at 8–16 kHz PWM with gate drive synchronized to SVPWM modulation. Use Value: Low VCE(sat) minimizes conduction loss at full load; positive tempco allows direct paralleling to scale current without derating. | Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from rectified DC bus during grid outage. IC Role / Device Role / Timing Role: Inverter-stage switch converting battery-derived DC to regulated sinusoidal AC; duty cycle modulated by digital controller. Use Value: 110 ns td(off) enables precise dead-time control to prevent shoot-through; 150 °C max Tj supports compact heatsink design. |
| Solar String Inverters | Induction Heating Systems |
Use Scenario: DC-AC conversion stage in 3–6 kW string inverters interfacing PV arrays to single-phase grid. IC Role / Device Role / Timing Role: High-side/low-side switch in H-bridge topology; driven by isolated gate driver with desaturation detection. Use Value: 600 V rating accommodates 500–600 V DC link; 2.0 V VCE(sat) reduces thermal stress during partial-load operation. | Use Scenario: Resonant half-bridge inverter driving 20–50 kHz tank circuit for metal melting and surface hardening. IC Role / Device Role / Timing Role: Hard-switched power switch operating near zero-voltage switching boundary; gate timing critical for resonant phase control. Use Value: Fast 25 ns fall time enables tight control of resonant period; low Coss minimizes capacitive losses at high frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN50N60B3 | 600 V/50 A trench-gate IGBT die; lower VCE(sat) (1.8 V) but higher Ciss (2200 pF) | Better conduction efficiency at >40 A; less suitable for >15 kHz due to higher gate charge | Select for higher-current, lower-frequency modules where gate drive loss is secondary to conduction loss |
| STMicroelectronics STGP30H60DF | 600 V/30 A planar NPT die; identical VCE(sat) (2.0 V), but 10% slower tf (27.5 ns) | Marginally reduced switching speed; same thermal envelope and parallel capability | Choose when supply chain diversification is required and 2.5 ns longer fall time is acceptable in dead-time budget |
Compared with IXGN50N60B3 and STGP30H60DF, SIGC25T60NCX1SA4 offers optimal balance of switching speed (25 ns tf) and gate drive efficiency (1350 pF Ciss) for 10–16 kHz industrial drives, while maintaining proven NPT reliability and parallel stability.
Availability
SIGC25T60NCX1SA4 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and induction heating systems requiring stable component supply and long-term module production continuity.
Supply support for SIGC25T60NCX1SA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.
SIGC25T60NCX1SA4 belongs to Infineon's high-voltage IGBT die portfolio designed specifically for integration into custom power modules targeting industrial automation, renewable energy, and traction applications.
FAQ
What die attach methods are qualified for SIGC25T60NCX1SA4?
Infineon specifies NiAg backside metallization compatible with both electrically conductive epoxy adhesives and soft-solder (e.g., SnAgCu) die attach. Thermal interface material selection must ensure <1.2 K/W junction-to-baseplate resistance in final module assembly. Silver sintering is not qualified per this datasheet edition.
Does SIGC25T60NCX1SA4 require negative gate voltage for reliable turn-off?
No. The device is rated for VGE = −20 V maximum, but stable turn-off is achieved with 0 V gate bias. A −5 V to −8 V negative gate voltage is recommended only in high-noise environments to suppress Miller-induced false turn-on during high di/dt commutation events.
Can SIGC25T60NCX1SA4 be paralleled without external emitter resistors?
Yes. Its positive temperature coefficient of VCE(sat) ensures inherent current balancing across multiple dies under thermal equilibrium. However, matched gate drive loop inductance and symmetrical layout remain essential to avoid dynamic current imbalance during switching transitions.
What is the maximum allowable gate wire bond diameter for this die?
The gate pad measures 0.68 × 1.08 mm² and is qualified for aluminum wire bonding up to 500 µm diameter. Larger wires risk pad lift or cratering; 300–400 µm is typical for production-grade reliability. Gold or copper wire bonding is not specified in the datasheet and requires separate qualification.
SIGC25T60NCX1SA4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 30 A
- Current - Collector Pulsed (Icm):
- 90 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 30A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- 21ns/110ns
- Test Condition:
- 300V, 30A, 8.2Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC25T60NCX1SA4 FAQ
1.How can I place an order for SIGC25T60NCX1SA4 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC25T60NCX1SA4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC25T60NCX1SA4 reliable?
The price and inventory of SIGC25T60NCX1SA4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC25T60NCX1SA4 is usually 5 days.
3.What payment methods are accepted for SIGC25T60NCX1SA4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC25T60NCX1SA4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC25T60NCX1SA4?
SIGC25T60NCX1SA4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC25T60NCX1SA4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC25T60NCX1SA4?
For technical support, including SIGC25T60NCX1SA4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC25T60NCX1SA4 requirements.
6.How does Aetrix verify that SIGC25T60NCX1SA4 is sourced from the original manufacturer or authorized distributors?
All SIGC25T60NCX1SA4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC25T60NCX1SA4 meets industry standards.
7.What is the process for return or replacement of SIGC25T60NCX1SA4?
All SIGC25T60NCX1SA4 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC25T60NCX1SA4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC25T60NCX1SA4 part is unused and in its original packaging.
Return procedure for SIGC25T60NCX1SA4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIGC25T60NCX1SA4 Tags
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