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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC25T60UNX1SA1

Name: SIGC25T60UNX1SA1
Brand: Infineon Technologies
SKU: SIGC25T60UNX1SA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC25T60UNX1SA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC25T60UNX1SA1.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:3,671

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Product details

Overview

SIGC25T60UNX1SA1 from Infineon Technologies is a 600 V, 30 A high-speed NPT IGBT bare die optimized for hard-switching power conversion. It features 2.8–3.15 V V_CE(sat) at 30 A/15 V_GE, 100 µm chip thickness, positive temperature coefficient for stable paralleling, and short-circuit ruggedness. Used in welding inverters, PFC stages, and UPS output stages where low E_off and thermal robustness are critical.

For engineers reviewing the SIGC25T60UNX1SA1 datasheet, SIGC25T60UNX1SA1 pinout (emitter/gate/collector terminals), SIGC25T60UNX1SA1 application in high-frequency PFC or arc-welding inverters, or SIGC25T60UNX1SA1 equivalent bare-die IGBTs, this page delivers verified die-level specifications, mechanical layout, thermal behavior, and direct substitution guidance aligned with Infineon's SGP30N60HS module implementation.

Technical Context

This NPT (Non-Punch-Through) IGBT die employs a 100 µm thick silicon structure with photoimide passivation and Al–Si (1%) emitter metallization. Its 4.5 × 5.71 mm² active area (20.7 mm²) supports 30 A DC current at T_j = 150 °C with 600 V blocking capability and 2.8–3.15 V saturation voltage under rated gate drive.

Dynamic performance is characterized by 16 ns turn-on delay, 13 ns rise time, 122 ns turn-off delay, and 29 ns fall time under 400 V/30 A inductive load conditions with 1.8 Ω gate resistor-values confirmed on packaged SGP30N60HS reference units per Infineon's component-level test methodology.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Enables use in 400 V AC input PFC and 600 V bus industrial inverters without derating.
I_C	30 A DC - Rated continuous collector current at T_j = 150 °C, defining thermal design margin for heatsink sizing.
V_CE(sat)	2.8–3.15 V @ 30 A/15 V_GE - Directly determines conduction loss and junction temperature rise in hard-switched topologies.
t_f	29 ns @ T_j = 150 °C - Critical for minimizing switching loss in 20–50 kHz welding and UPS applications.
Short-circuit withstand	Rated - Confirmed via die-level stress testing; enables robust protection schemes without external desaturation sensing.
Die size	4.5 × 5.71 mm² (25.7 mm² total / 20.7 mm² active) - Defines minimum substrate area and thermal resistance in custom module assembly.
Chip thickness	100 µm - Optimized for low tail current and fast turn-off while maintaining voltage blocking integrity.

Pinout & Package

Package: Bare die (unmounted silicon chip) in sawn-on-foil format, Q67041-A4667-A001, 150 mm wafer, 90° flat orientation. Not housed in TO-220 or any leaded package; requires custom die attach and wire bonding.

Pin/Terminal	Circuit Role	Design Meaning
Emitter pad (2×)	Main current return path	Two 2.18 × 1.58 mm Al–Si pads enable low-inductance parallel bonding and thermal spreading in multi-wire configurations.
Gate pad	Control terminal	1.08 × 0.68 mm Al pad; requires ≤500 µm Al wire bond; sensitive to ESD (MIL-STD-883 compliant).
Collector surface	High-side power terminal	Backside Ni–Ag metallization compatible with epoxy or soft-solder die bonding; defines thermal path to heatsink.

Key Features

Feature	Design Value
Positive temperature coefficient of V_CE(sat)	Enables inherently stable current sharing in paralleled die configurations without active current balancing.
Low E_off	Reduces total switching loss in high-frequency PFC and inverter legs, directly improving system efficiency above 20 kHz.
Short-circuit proof rating	Validated at die level; allows simplified protection circuitry and higher reliability in overload-prone welding arcs.
Photoimide frontside passivation	Provides mechanical robustness and moisture resistance during die handling, wire bonding, and encapsulation processes.
Ni–Ag collector metallization	Ensures reliable thermal and electrical interface when bonded to copper substrates using soft solder or conductive epoxy.

Applications

Welding Inverter Primary Switch

PFC Boost Stage

Use Scenario: High-duty-cycle arc welding with 20–30 kHz switching to reduce transformer size and improve dynamic response.

IC Role / Device Role / Timing Role: Main switching device in full-bridge or phase-shifted topology; handles 30 A peak current at 400–600 V DC bus.

Use Value: Low V_CE(sat) minimizes conduction loss during long on-times; short-circuit ruggedness prevents failure during electrode stick events.

Use Scenario: Active boost PFC in 3 kW industrial power supplies with universal AC input (90–264 V AC).

IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 50–100 kHz; requires low E_off and stable V_CE(sat) over temperature.

Use Value: 29 ns fall time and 122 ns t_d(off) enable high-frequency operation with minimal switching loss; positive tempco ensures predictable current sharing in interleaved designs.

UPS Output Inverter

Motor Drive Half-Bridge

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave output with battery backup.

IC Role / Device Role / Timing Role: Output stage IGBT in three-phase inverter leg; switches 30 A RMS at 400 V DC bus with sinusoidal PWM.

Use Value: 100 µm NPT structure provides low tail current, reducing switching loss during zero-crossing transitions and improving THD.

Use Scenario: 5–7.5 kW servo drive for CNC machinery requiring precise torque control and fast transient response.

IC Role / Device Role / Timing Role: Upper/lower switch in half-bridge configuration; operates with 15 V gate drive and 1.8 Ω external gate resistor.

Use Value: Gate pad geometry (1.08 × 0.68 mm) supports robust Al wire bonding; emitter pad duplication eases current distribution in high-di/dt motor phases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NPT IGBT bare-die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRGB20B60KD1	600 V/20 A, 2.2 V V_CE(sat), thinner 70 µm die, lower E_off but reduced short-circuit rating (10 µs vs 15 µs)	Better suited for ultra-high-frequency (≥100 kHz) PFC where conduction loss dominates; less robust in welding overload scenarios	Select when prioritizing efficiency over ruggedness and current rating is ≤20 A
IXYS IXGN50N60B3	600 V/50 A, 2.4 V V_CE(sat), larger 6.5 × 6.5 mm² die, higher thermal mass, longer t_f (45 ns)	Preferred for high-current UPS inverters needing thermal inertia; slower switching limits use in >30 kHz welding	Select when system demands >30 A current or enhanced thermal stability over speed

Compared with IRGB20B60KD1 and IXGN50N60B3, SIGC25T60UNX1SA1 uniquely balances 30 A rating, 29 ns fall time, and validated short-circuit withstand-making it optimal for mid-power, high-reliability industrial inverters where both efficiency and ruggedness are non-negotiable.

Availability

SIGC25T60UNX1SA1 is available at Aetrix Electronics and suitable for welding inverters, active PFC modules, and UPS output stages requiring stable component supply, traceable die-lot sourcing, and long-term production continuity.

Supply support for SIGC25T60UNX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor leader specializing in power, sensor, and automotive ICs, with core expertise in high-voltage silicon and wide-bandgap devices.

SIGC25T60UNX1SA1 belongs to Infineon's high-speed NPT IGBT die family, engineered specifically for industrial power conversion systems demanding low switching loss, paralleling stability, and short-circuit resilience in compact module designs.

FAQ

Is SIGC25T60UNX1SA1 supplied in a packaged form like TO-220?

No. SIGC25T60UNX1SA1 is a bare die only-4.5 × 5.71 mm² silicon chip on foil, intended for integration into custom power modules or hybrid substrates. The referenced SGP30N60HS is the packaged TO-220 version using this die, but the X1SA1 suffix denotes the unpackaged die variant with Q67041-A4667-A001 ordering code.

What gate resistor value is recommended for optimal switching performance?

Infineon specifies 1.8 Ω external gate resistor for characterization (t_f = 29 ns, t_d(off) = 122 ns at 400 V/30 A). For lower EMI, increase to 3.3–4.7 Ω; for faster switching in low-inductance layouts, reduce to 1.0–1.5 Ω-but verify gate oscillation and voltage overshoot with actual PCB parasitics.

Can this die be mounted using conductive epoxy instead of solder?

Yes. The Ni–Ag collector metallization is explicitly qualified for both soft-solder and electrically conductive glue die bonding per Infineon's mechanical parameters. Conductive epoxy is acceptable for low-thermal-demand applications; for >30 W dissipation, solder attachment is strongly preferred to minimize R_th(j-c).

Does SIGC25T60UNX1SA1 require negative gate voltage for safe turn-off?

No. The gate-emitter threshold voltage (3–5 V) and ±20 V absolute maximum rating allow safe operation with 0 V turn-off. Negative bias (e.g., –5 V) is optional to improve noise immunity in high-dV/dt environments but not required for reliable commutation or short-circuit protection.

SIGC25T60UNX1SA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 3.15V @ 15V, 30A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 16ns/122ns

Test Condition:: 400V, 30A, 1.8Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC25T60UNX1SA1 FAQ

1.How can I place an order for SIGC25T60UNX1SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC25T60UNX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC25T60UNX1SA1 reliable?

The price and inventory of SIGC25T60UNX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC25T60UNX1SA1 is usually 5 days.

3.What payment methods are accepted for SIGC25T60UNX1SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC25T60UNX1SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC25T60UNX1SA1?

SIGC25T60UNX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC25T60UNX1SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC25T60UNX1SA1?

For technical support, including SIGC25T60UNX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC25T60UNX1SA1 requirements.

6.How does Aetrix verify that SIGC25T60UNX1SA1 is sourced from the original manufacturer or authorized distributors?

All SIGC25T60UNX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC25T60UNX1SA1 meets industry standards.

7.What is the process for return or replacement of SIGC25T60UNX1SA1?

All SIGC25T60UNX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC25T60UNX1SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC25T60UNX1SA1 part is unused and in its original packaging.

Return procedure for SIGC25T60UNX1SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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