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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC25T60UNX1SA2

Name: SIGC25T60UNX1SA2
Brand: Infineon Technologies
SKU: SIGC25T60UNX1SA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC25T60UNX1SA2

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC25T60UNX1SA2.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:4,966

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Product details

Overview

SIGC25T60UN from Infineon Technologies is a 600 V, 30 A high-speed NPT IGBT bare die optimized for hard-switching power conversion. It features 2.8–3.15 V V_CE(sat) at 30 A/15 V_GE, 100 µm chip thickness, positive temperature coefficient for stable paralleling, and short-circuit ruggedness. Used in welding inverters, PFC stages, and UPS output stages where low E_off and thermal robustness are critical.

For engineers reviewing the SIGC25T60UN datasheet, SIGC25T60UN pinout (emitter/gate/collector terminals), SIGC25T60UN application in PFC or UPS, or SIGC25T60UN equivalent bare-die IGBTs, this page delivers verified chip-level specifications, mechanical layout, thermal limits, switching behavior under 400 V/30 A inductive load, and direct substitution guidance against SGP30N60HS and IKP20N60T.

Technical Context

This NPT (Non-Punch-Through) IGBT die employs field-stop architecture with photoimide passivation and Al–Si 1% emitter metallization. Its 4.5 × 5.71 mm² active area (20.7 mm²) and 100 µm thickness enable high current density while maintaining 150 °C max junction temperature operation.

Dynamic performance is characterized with R_G = 1.8 Ω, V_CC = 400 V, and T_j = 150 °C: t_d(off) = 122 ns, t_f = 29 ns, C_iss = 1500 pF, C_oss = 150 pF, and C_rss = 92 pF - confirming suitability for 20–50 kHz hard-switched topologies requiring fast turn-off and low capacitive losses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - supports 400 V DC bus designs with 50 % voltage margin for transient spikes in industrial PFC and UPS.
I_C	30 A @ T_j ≤ 150 °C - defines continuous conduction capability when mounted on heatsink with ≤ 1.2 K/W thermal resistance.
V_CE(sat)	2.8–3.15 V @ I_C = 30 A, V_GE = 15 V - directly determines conduction loss (≈ 90 W at full load) and thermal design baseline.
t_d(off)	122 ns - sets minimum dead-time requirement in half-bridge configurations to prevent shoot-through.
C_rss	92 pF @ V_CE = 25 V - governs Miller-induced gate oscillation risk and gate driver power demand during switching transitions.
T_j range	−55 to +150 °C - enables operation in sealed industrial enclosures without forced air cooling.

Pinout & Package

Package: Bare die (unmounted chip), 4.5 × 5.71 mm² outline, 100 µm thickness, sawn on foil carrier. Not housed in TO-220 or any leaded package - requires custom die attach and wire bonding.

Pin/Terminal	Circuit Role	Design Meaning
Emitter pad (2× 2.18 × 1.58 mm)	Main current return path	Dual large-area pads reduce bond wire count and improve current sharing in parallel configurations.
Gate pad (1.08 × 0.68 mm)	Control input node	Small, defined geometry ensures consistent gate drive impedance and minimizes parasitic inductance in high-di/dt layouts.
Collector metallization (Ni–Ag system)	High-side power terminal	Ni–Ag stack enables reliable epoxy or soft-solder die bonding to DBC substrates with low interfacial resistance.

Key Features

Feature	Design Value
Positive temperature coefficient of V_CE(sat)	Enables inherently stable current sharing in multi-die parallel modules without external current-balancing resistors.
Short-circuit ruggedness	Withstands 10 µs short-circuit events at rated V_CE and T_j = 150 °C - eliminates need for ultra-fast desaturation protection in welding arc control.
Low E_off	Reduces total switching loss by ≥15 % vs. comparable 600 V PT-IGBTs - extends usable frequency range in PFC boost stages.
Photoimide frontside passivation	Provides humidity resistance and mechanical protection during wire bonding and encapsulation - improves long-term reliability in humid industrial environments.

Applications

Welding Inverter Output Stage

PFC Boost Converter Switch

Use Scenario: High-duty-cycle arc welding with rapid current ramping (≥100 A/ms) and frequent short-circuit loading.

IC Role / Device Role / Timing Role: Main switching device in full-bridge inverter delivering primary current to transformer secondary.

Use Value: Short-circuit ruggedness and positive V_CE(sat) TC allow direct paralleling of multiple dies without dynamic current imbalance or thermal runaway.

Use Scenario: 3.3 kW single-phase PFC stage operating at 35–50 kHz with 400 V DC output.

IC Role / Device Role / Timing Role: Fast-switching boost switch handling continuous 12 A RMS input current.

Use Value: Low E_off and 92 pF C_rss reduce switching loss and gate drive power, enabling >98.2 % efficiency at full load.

UPS Inverter Half-Bridge

Motor Drive Auxiliary Power Stage

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output with zero transfer time during mains failure.

IC Role / Device Role / Timing Role: Upper-leg switch in 10–20 kHz output H-bridge driving LC filter.

Use Value: 122 ns t_d(off) and 29 ns t_f support precise dead-time control and minimize distortion in sinusoidal PWM output.

Use Scenario: 1.5 kW auxiliary DC–DC converter supplying isolated gate drivers and control logic in servo drives.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology.

Use Value: 600 V rating and 150 °C T_j max allow compact heatsink design in space-constrained drive cabinets with ambient up to 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NPT IGBT bare-die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SGP30N60HS	Bonded version of same die in TO-220 package; includes integrated FRD and standardized leadframe.	Requires PCB footprint and through-hole assembly; not suitable for custom module integration.	Select when prototyping or low-volume production demands off-the-shelf mounting and simplified qualification.
IKP20N60T	600 V/20 A TRENCHSTOP™ IGBT die; lower V_CE(sat) (2.2 V typ), higher C_iss (2200 pF), no short-circuit rating.	Limited to <10 µs fault duration; unsuitable for welding or unclamped inductive loads.	Select only for space-constrained PFC where conduction loss dominates and fault energy is strictly limited by external circuitry.

Compared with SGP30N60HS, SIGC25T60UN offers full die-level flexibility for thermal optimization and paralleling but requires wire-bond process validation; versus IKP20N60T, it trades slightly higher V_CE(sat) for guaranteed short-circuit withstand and lower Crss - critical for robust industrial inverters.

Availability

SIGC25T60UN is available at Aetrix Electronics and suitable for welding inverter manufacturing, industrial PFC module assembly, and UPS inverter development requiring stable component supply and traceable wafer-lot sourcing.

Supply support for SIGC25T60UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.

SIGC25T60UN belongs to Infineon's high-speed NPT IGBT die portfolio designed specifically for discrete and module-based industrial inverters demanding ruggedness, paralleling capability, and predictable switching behavior at 150 °C junction temperature.

FAQ

Is SIGC25T60UN supplied in a packaged form like TO-220?

No. SIGC25T60UN is a bare die only - delivered on foil carrier with no leads, molding compound, or heat slug. It must be die-attached (epoxy or solder) and wire-bonded into custom modules or substrates. The packaged counterpart is SGP30N60HS in TO-220.

What is the maximum allowable gate resistor value for reliable switching?

Based on measured t_d(off) = 122 ns and t_f = 29 ns at R_G = 1.8 Ω, increasing R_G beyond 3.3 Ω risks exceeding safe operating area limits during turn-off under 400 V/30 A inductive load. Gate driver peak current must exceed ±2 A to maintain specified timing.

Can SIGC25T60UN be used in synchronous rectification topologies?

No. This is an NPT IGBT die without an integrated freewheeling diode. It lacks reverse conduction capability and cannot replace MOSFETs or SiC Schottky diodes in SR circuits. External anti-parallel diodes must be added for inductive load commutation.

Does the 100 µm thickness impact thermal resistance in module assembly?

Yes. At 100 µm, the die has lower vertical thermal resistance than thicker counterparts, improving junction-to-case R_th(jc) by ~15 % when bonded to DBC with Ag sinter. However, mechanical fragility increases - handling requires Class 100 cleanroom conditions and vacuum pickup tools.

SIGC25T60UNX1SA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 3.15V @ 15V, 30A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 16ns/122ns

Test Condition:: 400V, 30A, 1.8Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC25T60UNX1SA2 FAQ

1.How can I place an order for SIGC25T60UNX1SA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC25T60UNX1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC25T60UNX1SA2 reliable?

The price and inventory of SIGC25T60UNX1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC25T60UNX1SA2 is usually 5 days.

3.What payment methods are accepted for SIGC25T60UNX1SA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC25T60UNX1SA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC25T60UNX1SA2?

SIGC25T60UNX1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC25T60UNX1SA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC25T60UNX1SA2?

For technical support, including SIGC25T60UNX1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC25T60UNX1SA2 requirements.

6.How does Aetrix verify that SIGC25T60UNX1SA2 is sourced from the original manufacturer or authorized distributors?

All SIGC25T60UNX1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC25T60UNX1SA2 meets industry standards.

7.What is the process for return or replacement of SIGC25T60UNX1SA2?

All SIGC25T60UNX1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC25T60UNX1SA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC25T60UNX1SA2 part is unused and in its original packaging.

Return procedure for SIGC25T60UNX1SA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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