Infineon Technologies SIGC28T60EX1SA4

Overview

SIGC28T60EX1SA4 from Infineon Technologies is a 600 V, 50 A rated TRENCHSTOP™ IGBT3 bare die optimized for industrial power control in discrete and module applications. It features low V_CE(sat) (1.45 V typ. @ 50 A), short tail current, positive temperature coefficient for stable paralleling, and 6 µs short-circuit withstand time at 150 °C junction temperature - deployed in motor drives and resonant converters.

For engineers reviewing the SIGC28T60EX1SA4 datasheet, SIGC28T60EX1SA4 pinout, SIGC28T60EX1SA4 application, or SIGC28T60EX1SA4 equivalent, key selection criteria include verified V_CE(sat), RBSOA compliance at 600 V/100 A, gate threshold voltage stability (5.0–6.5 V), thermal robustness up to 175 °C, and wafer-level electrostatic discharge sensitivity per MIL-STD-883.

Technical Context

This IGBT3 die employs trench-gate and field-stop architecture to achieve low conduction loss and fast switching with minimal tail current decay. Its positive V_CE(sat) temperature coefficient enables reliable parallel operation without external current-sharing resistors.

Rated for 600 V DC blocking and 150 A pulsed collector current, it supports short-circuit ruggedness of 6 µs under V_GE = 15 V, V_CC = 360 V, and T_vj = 150 °C - validated by characterization, not production test.

Key Specifications

Pinout & Package

Package: Bare die (sawn on foil), die size 6.57 mm × 4.20 mm, silicon thickness 70 µm, Ni/Ag backside metallization for solder attach.

Key Features

Applications

Availability

SIGC28T60EX1SA4 is available at Aetrix Electronics and suitable for industrial motor drives, home appliance inverters, and resonant power conversion systems requiring stable component supply and wafer-level traceability.

Supply support for SIGC28T60EX1SA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This bare die belongs to the TRENCHSTOP™ IGBT3 product line, engineered specifically for high-efficiency, high-reliability discrete and module-based industrial power conversion - emphasizing low-loss switching, rugged short-circuit behavior, and thermal stability.

FAQ

Is SIGC28T60EX1SA4 qualified for automotive applications?

No. Per Infineon's legal disclaimer in Rev. 2.1 (2017), this bare die is not qualified to AEC-Q101 or any automotive stress test standard. It is intended exclusively for industrial and consumer power applications where automotive-grade qualification is not required.

What is the recommended gate resistor value for optimal switching performance?

Infineon does not specify a single R_G due to module-dependent parasitics. However, typical design practice uses 10–22 Ω for turn-on and 5–15 Ω for turn-off to balance E_on/E_off trade-offs while maintaining dV/dt < 5 kV/µs and gate oscillation damping.

Can SIGC28T60EX1SA4 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient enables stable current sharing. Successful paralleling requires matched gate drive loop inductance, symmetrical thermal mounting, and Kelvin emitter connections to avoid dynamic imbalance during transients.

Does this die include an integrated gate resistor?

No. The datasheet explicitly states "Integrated gate resistor rG: none." External gate resistors must be implemented on the substrate or module PCB to control switching speed, EMI, and voltage overshoot - no on-die termination is present.