Infineon Technologies SIGC28T65EX1SA1

Overview

SIGC28T65EX1SA1 from Infineon Technologies is a 650 V, 50 A rated bare-die TRENCHSTOP™ IGBT3 chip optimized for industrial power modules. It features low V_CE(sat) (1.45 V typ. @ 50 A, 15 V_GE, 25°C), short tail current, positive temperature coefficient for stable paralleling, and 6 µs short-circuit withstand time at 150°C junction temperature-used in AC motor drives and industrial inverters.

For engineers reviewing the SIGC28T65EX1SA1 datasheet, SIGC28T65EX1SA1 pinout, SIGC28T65EX1SA1 application, or SIGC28T65EX1SA1 equivalent, key selection criteria include V_CE(sat) vs. switching loss trade-off, thermal interface design for 175°C max T_vj, gate drive voltage compatibility (±20 V), and die-level mounting constraints for module integration.

Technical Context

This IGBT3 die employs trench-gate and field-stop technology to achieve reduced conduction losses while maintaining robust short-circuit ruggedness. Its positive V_CE(sat) temperature coefficient enables stable current sharing in parallel configurations without external current-balancing resistors.

Static characteristics are wafer-tested per JEDEC JESD22-A114; dynamic behavior-including turn-on/turn-off energy-is module-dependent and requires validation at packaged level. The die integrates no gate resistor (r_G = none) and uses Al wire bonding with ≤500 µm diameter.

Key Specifications

Pinout & Package

Package: Bare die (sawn on foil), die size 6.57 mm × 4.20 mm, silicon thickness 70 µm, Ni/Ag backside metallization for solder attachment. No leadframe or molded package.

Key Features

Applications

Availability

SIGC28T65EX1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and industrial welding equipment requiring stable component supply and long-term production continuity.

Supply support for SIGC28T65EX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

SIGC28T65EX1SA1 belongs to the TRENCHSTOP™ IGBT3 product line, engineered specifically for high-efficiency, high-reliability industrial power modules where thermal stability, paralleling capability, and short-circuit ruggedness are critical.

FAQ

Is SIGC28T65EX1SA1 qualified for automotive applications?

No. This bare die is not qualified to AEC-Q101 or any automotive reliability standard. Infineon explicitly states in the datasheet that it is intended for industrial power modules only and excludes automotive use due to lack of qualification testing and different process controls.

What gate drive voltage is recommended for reliable operation?

A gate-emitter voltage of +15 V is recommended for nominal turn-on, with –5 V to –8 V for active Miller clamping during turn-off. The absolute maximum rating is ±20 V; exceeding this risks irreversible gate oxide damage, especially under transient conditions.

Can SIGC28T65EX1SA1 be paralleled without external current-sharing components?

Yes-its positive V_CE(sat) temperature coefficient enables inherent current balancing when mounted on a common heatsink with matched thermal impedance. However, symmetrical gate drive layout and identical bond wire lengths are mandatory to prevent dynamic imbalance.

Does this die include an integrated gate resistor?

No. The datasheet explicitly states "Integrated gate resistor r_G: none." External gate resistors must be added to control dV/dt, switching speed, and oscillation damping; typical values range from 5 Ω to 22 Ω depending on gate driver capability and layout parasitics.