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Infineon Technologies SIGC39T60EX1SA3
- Part No.:
- SIGC39T60EX1SA3
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC39T60EX1SA3.pdf
- Description:
- IGBT TRENCH FS 600V 75A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:3,345
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Product details
Overview
SIGC39T60EX1SA3 from Infineon Technologies is a 600 V, 75 A rated TRENCHSTOP™ IGBT3 bare die optimized for industrial power control in discrete and module applications. It features low VCE(sat) (1.45 V typ. @ 75 A), short tail current, positive temperature coefficient for stable paralleling, and 6 µs short-circuit withstand time at 150 °C junction temperature - deployed in motor drives and resonant converters.
For engineers reviewing the SIGC39T60EX1SA3 datasheet, SIGC39T60EX1SA3 pinout, SIGC39T60EX1SA3 application, or SIGC39T60EX1SA3 equivalent, key selection criteria include VCE(sat) consistency across temperature, RBSOA boundary at 600 V/150 A, gate charge profile for 15 V drive compatibility, and die-level thermal resistance constraints in bonded assemblies.
Technical Context
This IGBT3 die employs trench-gate and field-stop architecture to achieve reduced conduction and switching losses simultaneously. Its 6.59 mm × 5.91 mm silicon die integrates AlSiCu frontside metallization, Ni/Ag backside metallization, and photoimide passivation - designed for conductive epoxy or soft-solder die attach in high-reliability power modules.
Static characteristics are wafer-tested per JEDEC JESD22-A108, with VGE(th) = 5.8 V (typ.), Cies = 4620 pF (typ.), and Cres = 137 pF (typ.) at 25 °C - enabling precise gate driver sizing and EMI-aware layout in hard-switched topologies up to 20 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE Rating | 600 V DC - supports 400 V AC input rectified bus systems with 50 % voltage margin |
| ICn | 75 A continuous - defines thermal design basis for die-attach interface and heatsink sizing |
| VCE(sat) | 1.45 V (typ. @ 75 A, 15 VGE, 25 °C) - directly determines conduction loss and thermal rise in steady-state operation |
| tsc | 6 µs (VGE=15 V, VCC=360 V, Tvj=150 °C) - sets minimum fault-clearing response time for protection circuitry |
| Cres | 137 pF (typ. @ 25 V, 25 °C) - governs Miller-induced turn-on risk and dV/dt immunity in bridge configurations |
| Tvj Range | –40 °C to +175 °C - enables operation in sealed industrial enclosures without active cooling |
| VGE(th) | 5.8 V (typ.) - ensures robust noise immunity against gate-drive crosstalk in multi-die modules |
Pinout & Package
Package: Bare die (no leadframe or molded package); dimensions 6.59 mm × 5.91 mm × 70 µm; frontside AlSiCu metallization with separate Gate (G) and Emitter (E) pads as shown in chip drawing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate terminal | 1.52 mm × 0.82 mm Al pad - requires <15 V drive with ≤1 Ω series resistance to limit dv/dt-induced oscillation |
| E | Emitter terminal | Dual Emitter pads (symmetrical layout) - enables low-inductance emitter return path and current sharing in parallel configurations |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) with positive tempco | Enables stable current sharing across multiple dies without external emitter resistors |
| Short tail current | Reduces turn-off energy (Eoff) by >25 % vs. IGBT2, easing snubber design in 10–20 kHz inverters |
| 6 µs short-circuit capability | Allows use with standard 5–10 µs desaturation detection circuits without derating |
| Photoimide passivation | Provides humidity resistance and mechanical protection during wire bonding and die attach |
| Ni/Ag backside metallization | Supports reliable solder joint formation while preserving thermal conductivity to baseplate |
Applications
| Industrial Motor Drives | Resonant Converters |
|---|---|
Use Scenario: 3-phase inverter stage in HVAC compressors and pump controllers operating at 8–16 kHz switching frequency. IC Role / Device Role / Timing Role: Main switching device in half-bridge leg; handles 75 A RMS output current with <1.5 V conduction drop. Use Value: Low VCE(sat) and short tail current reduce total losses by ~18 % versus prior-generation IGBTs at 12 kHz, improving system efficiency to >97.2 %. | Use Scenario: Primary-side switch in LLC resonant DC-DC converters for server PSUs and telecom rectifiers. IC Role / Device Role / Timing Role: Hard-commutated switch synchronized to zero-voltage switching (ZVS) transitions; operates with 360 V bus. Use Value: 6 µs short-circuit rating aligns with ZVS fault window timing, enabling single-cycle overcurrent shutdown without false triggering. |
| White Goods Inverters | Power Modules |
Use Scenario: Variable-speed drive for refrigerator compressors and washing machine drum motors. IC Role / Device Role / Timing Role: Discrete IGBT in compact, cost-optimized inverter PCB; thermally coupled to aluminum chassis. Use Value: Positive VCE(sat) temperature coefficient ensures inherent current balancing when two dies are mounted on same heatsink. | Use Scenario: Core switching element in 600 V, 75 A-rated 6-pack power modules for servo drives and UPS systems. IC Role / Device Role / Timing Role: One of six identical dies in half-bridge configuration; gate-driven via isolated transformer. Use Value: Standardized 6.59 mm × 5.91 mm footprint enables direct replacement in existing module layouts without requalification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKP30N60T3 | 600 V/30 A TO-247 packaged IGBT; higher VCE(sat) (1.6 V typ.), larger package thermal resistance | Used in lower-current discrete designs where module integration is not required | Select when board-level assembly and simplified thermal management outweigh die-level optimization needs |
| FGH60N60SMD | 600 V/60 A SMD-packaged IGBT; 1.8 V VCE(sat), no short-circuit rating specified | Targeted at space-constrained consumer inverters with <5 µs fault response requirements | Choose only if application does not require validated 6 µs short-circuit immunity or die-level paralleling |
Compared with IKP30N60T3 and FGH60N60SMD, SIGC39T60EX1SA3 delivers superior current density (75 A in 38.95 mm²), guaranteed short-circuit ruggedness, and bare-die flexibility for custom thermal and electrical integration - making it optimal for high-efficiency industrial modules.
Availability
SIGC39T60EX1SA3 is available at Aetrix Electronics and suitable for industrial motor drives, resonant DC-DC converters, and white goods inverters requiring stable component supply and long-term production continuity.
Supply support for SIGC39T60EX1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.
SIGC39T60EX1SA3 belongs to the TRENCHSTOP™ IGBT3 die family, engineered specifically for high-efficiency, high-reliability industrial power conversion where thermal performance, ruggedness, and die-level customization are critical.
FAQ
Is SIGC39T60EX1SA3 qualified to AEC-Q101?
No. Per Infineon's legal disclaimer in the datasheet, this bare die is explicitly not qualified to AEC-Q101 or any automotive stress test standard. It is intended for industrial and consumer power applications only, and automotive use requires additional qualification by the end customer.
What die attach methods are recommended?
Infineon specifies electrically conductive epoxy glue or soft solder for die attachment. The Ni/Ag backside metallization is designed for soldering, but full consumption of the Ni layer must be avoided to ensure bondline integrity and thermal reliability over temperature cycling.
Does SIGC39T60EX1SA3 include an integrated gate resistor?
No. The datasheet states "Integrated gate resistor rG: none". External gate resistors must be used to control switching speed, suppress oscillation, and limit peak gate current - typical values range from 5 Ω to 22 Ω depending on drive strength and layout parasitics.
Can this die be paralleled without emitter resistors?
Yes. Its positive temperature coefficient of VCE(sat) enables stable current sharing between multiple dies under thermal imbalance. However, symmetrical layout, matched gate drive paths, and uniform die attach thickness remain essential to avoid dynamic current imbalance.
SIGC39T60EX1SA3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 75 A
- Current - Collector Pulsed (Icm):
- 225 A
- Vce(on) (Max) @ Vge, Ic:
- 1.85V @ 15V, 75A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC39T60EX1SA3 FAQ
1.How can I place an order for SIGC39T60EX1SA3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC39T60EX1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC39T60EX1SA3 reliable?
The price and inventory of SIGC39T60EX1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC39T60EX1SA3 is usually 5 days.
3.What payment methods are accepted for SIGC39T60EX1SA3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC39T60EX1SA3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC39T60EX1SA3?
SIGC39T60EX1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC39T60EX1SA3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC39T60EX1SA3?
For technical support, including SIGC39T60EX1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC39T60EX1SA3 requirements.
6.How does Aetrix verify that SIGC39T60EX1SA3 is sourced from the original manufacturer or authorized distributors?
All SIGC39T60EX1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC39T60EX1SA3 meets industry standards.
7.What is the process for return or replacement of SIGC39T60EX1SA3?
All SIGC39T60EX1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC39T60EX1SA3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC39T60EX1SA3 part is unused and in its original packaging.
Return procedure for SIGC39T60EX1SA3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIGC39T60EX1SA3 Tags
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