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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC42T60NCX1SA3

Name: SIGC42T60NCX1SA3
Brand: Infineon Technologies
SKU: SIGC42T60NCX1SA3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC42T60NCX1SA3

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC42T60NCX1SA3.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:4,224

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Product details

Overview

SIGC42T60NCX1SA3 from Infineon Technologies is a 600 V, 50 A NPT (Non-Punch-Through) IGBT bare die optimized for high-reliability industrial motor drives. It features a 6.5 × 6.5 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, and Al–Si 1% emitter metallization. Used in 3-phase inverter modules for HVAC compressors and servo drives.

For engineers reviewing the SIGC42T60NCX1SA3 datasheet, SIGC42T60NCX1SA3 pinout (emitter/gate/collector terminals), SIGC42T60NCX1SA3 application in motor drive inverters, or SIGC42T60NCX1SA3 equivalent bare-die IGBTs, this page delivers verified chip-level specifications, thermal and switching behavior, die bonding guidance, and module integration context - all derived from Infineon's official chip data sheet L7272-M Edition 2.

Technical Context

This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 4.5–6.5 V and exhibits a collector-emitter saturation voltage of 1.7–2.5 V at 50 A and 15 V gate drive. Its 2200 pF input capacitance and 200 pF reverse transfer capacitance support predictable turn-on/turn-off timing under 3.3 Ω gate resistance.

The die integrates photoimide passivation and Ni–Ag collector metallization compatible with epoxy and soft-solder die attach. With a 100 µm thickness and 35.6 mm² active area within a 42.25 mm² total die footprint, it enables high power density while maintaining thermal robustness up to +150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage defines suitability for 400 V AC input rectified bus applications.
I_C	50 A - Continuous DC collector current rating at T_jmax, used for thermal sizing of module baseplate and heatsink.
V_CE(sat)	1.7–2.5 V - Low conduction loss range directly impacts inverter efficiency and thermal design margin.
t_d(off)	130 ns - Turn-off delay time measured at T_j = 125 °C, critical for dead-time calculation in PWM control.
C_iss	2200 pF - Input capacitance determines gate drive power requirement and influences Miller effect susceptibility.
T_j Range	−55 to +150 °C - Extended operating junction temperature supports high-ambient industrial environments.
Die Size	6.5 × 6.5 mm² - Physical footprint constrains module layout, interconnect inductance, and thermal spreading path.

Pinout & Package

Package: Bare die (unpackaged silicon chip), sawn on foil, 6.5 × 6.5 mm² outline, 100 µm thickness, photoimide passivated frontside, Ni–Ag collector metallization, Al wire-bondable emitter and gate pads.

Pin/Terminal	Circuit Role	Design Meaning
Emitter Pad (2×)	Main current return path and reference for gate drive	Two 3.0 × 2.85 mm Al–Si 1% pads enable low-inductance, dual-side emitter bonding in press-pack or soldered modules.
Gate Pad	Control terminal for MOS-controlled bipolar conduction	0.8 × 1.5 mm Al pad designed for ≤500 µm Al wire bonding; requires <±20 V gate voltage compliance.
Collector Surface	High-side power output and thermal interface	Backside Ni–Ag metallization supports conductive epoxy or soft-solder attachment to DBC substrate or direct copper baseplate.

Key Features

Feature	Design Value
Positive Temperature Coefficient	Enables stable current sharing without external current-balancing resistors when paralleling multiple dies.
NPT Technology	Provides soft switching characteristics and reduced tail current versus PT/FS IGBTs, lowering E_off and improving reliability.
100 µm Thin Wafer	Reduces stored charge and switching losses while maintaining rugged short-circuit withstand capability.
Photoimide Passivation	Offers superior moisture resistance and mechanical protection during die handling and module assembly processes.
Al–Si 1% Emitter Metallization	Ensures reliable wire bondability and low contact resistance over lifetime under thermal cycling stress.

Applications

Industrial Motor Drives

HVAC Compressor Inverters

Use Scenario: Three-phase 3 kW–7.5 kW variable-frequency drives controlling induction motors in pumps and conveyors.

IC Role / Device Role / Timing Role: Main switching element in 6-pulse inverter bridge; handles 50 A RMS output with 130 ns turn-off delay defining minimum dead-time.

Use Value: Positive temperature coefficient allows parallel configuration without derating, increasing system power density by >25% vs. single-die solutions.

Use Scenario: Hermetic compressor inverters in commercial air-conditioning units operating continuously at 45–60 °C ambient.

IC Role / Device Role / Timing Role: High-side switch in phase-leg topology; rated for 600 V blocking and 150 A pulsed current during startup surge.

Use Value: 150 °C max junction temperature and photoimide passivation ensure >10-year field reliability under high-humidity, thermally cycled conditions.

Servo Drive Power Stages

Renewable Energy Converters

Use Scenario: 20 kHz PWM-driven position-control inverters for robotics and CNC axes requiring fast dynamic response.

IC Role / Device Role / Timing Role: Fast-switching IGBT die with 12 ns rise time and 30 ns fall time enabling precise current-loop bandwidth up to 5 kHz.

Use Value: Low C_iss (2200 pF) and Crss (200 pF) minimize gate drive losses and reduce dv/dt-induced shoot-through risk.

Use Scenario: DC–AC stage in 5–10 kW solar string inverters interfacing with 600 V PV arrays.

IC Role / Device Role / Timing Role: Hard-switched inverter switch with 600 V V_CE rating matching standard PV system DC bus voltage.

Use Value: NPT structure provides soft turn-off and low tail current, reducing snubber requirements and improving conversion efficiency above 97.2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT bare-die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N60B3	600 V, 50 A, PT-type IGBT with higher V_CE(sat) (2.2–2.8 V) and lower t_d(off) (95 ns)	Higher conduction loss; better for high-frequency switching but less robust short-circuit capability	Prefer when switching frequency >30 kHz and short-circuit immunity is secondary to efficiency.
STMicroelectronics STGP50H60DF	600 V, 50 A, Trench-Field-Stop IGBT with 1.8–2.3 V V_CE(sat) and 110 ns t_d(off)	Lower switching loss but negative temperature coefficient limits parallel operation	Choose for compact single-die designs where thermal derating and paralleling are not required.

Compared with IXGN50N60B3 and STGP50H60DF, SIGC42T60NCX1SA3 offers superior thermal stability for paralleled configurations and softer switching due to NPT architecture - making it preferred for industrial drives demanding long-term reliability over peak efficiency.

Availability

SIGC42T60NCX1SA3 is available at Aetrix Electronics and suitable for industrial motor drives, HVAC compressor inverters, servo power stages, and renewable energy converters requiring stable component supply across multi-year production cycles.

Supply support for SIGC42T60NCX1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

SIGC42T60NCX1SA3 belongs to Infineon's high-voltage discrete IGBT die portfolio, developed specifically for module manufacturers building rugged, high-current inverter platforms for industrial automation and climate control systems.

FAQ

What is the recommended die attach method for SIGC42T60NCX1SA3?

Infineon specifies Ni–Ag collector metallization compatible with both conductive epoxy and soft-solder die bonding. For high-power modules, soft-solder (e.g., SnAgCu) is preferred to minimize thermal resistance; epoxy is acceptable for lower-power or repair-sensitive assemblies. Avoid Pb-free solder pastes with excessive voiding risk.

Does SIGC42T60NCX1SA3 require gate resistors for paralleling?

While its positive temperature coefficient enables stable current sharing, individual gate resistors (typically 3.3 Ω, non-inductive) are still required per die to suppress oscillation and ensure matched turn-on/turn-off timing. Layout symmetry and matched gate loop inductance remain critical for reliable paralleling.

Can SIGC42T60NCX1SA3 be used in 650 V DC bus applications?

No. Its absolute maximum V_CE rating is 600 V at T_j = 25 °C, derating to ~540 V at T_j = 125 °C. Operating above 600 V risks avalanche breakdown and irreversible damage. Use only in 400 V AC input (≈560 V DC) or lower bus systems with adequate voltage margin.

Is wire bonding limited to aluminum for this die?

Yes - the emitter and gate pads are metallized with Al–Si 1%, qualified for aluminum wire bonding up to 500 µm diameter. Copper wire bonding is not supported due to metallurgical incompatibility and risk of intermetallic formation. Gold or silver wires are also not recommended.

SIGC42T60NCX1SA3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 50A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 43ns/130ns

Test Condition:: 300V, 50A, 3.3Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC42T60NCX1SA3 FAQ

1.How can I place an order for SIGC42T60NCX1SA3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC42T60NCX1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC42T60NCX1SA3 reliable?

The price and inventory of SIGC42T60NCX1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC42T60NCX1SA3 is usually 5 days.

3.What payment methods are accepted for SIGC42T60NCX1SA3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC42T60NCX1SA3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC42T60NCX1SA3?

SIGC42T60NCX1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC42T60NCX1SA3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC42T60NCX1SA3?

For technical support, including SIGC42T60NCX1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC42T60NCX1SA3 requirements.

6.How does Aetrix verify that SIGC42T60NCX1SA3 is sourced from the original manufacturer or authorized distributors?

All SIGC42T60NCX1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC42T60NCX1SA3 meets industry standards.

7.What is the process for return or replacement of SIGC42T60NCX1SA3?

All SIGC42T60NCX1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC42T60NCX1SA3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC42T60NCX1SA3 part is unused and in its original packaging.

Return procedure for SIGC42T60NCX1SA3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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