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Infineon Technologies SIGC42T60NCX1SA4
- Part No.:
- SIGC42T60NCX1SA4
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC42T60NCX1SA4.pdf
- Description:
- IGBT 3 CHIP 600V WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:9,229
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Product details
Overview
SIGC42T60NCX1SA4 from Infineon Technologies is a 600 V, 50 A NPT (Non-Punch-Through) IGBT bare die optimized for high-reliability industrial drive inverters. It features a 100 µm chip thickness, positive temperature coefficient for stable parallel operation, and 6.5 × 6.5 mm² active die area with dual emitter pads. Used in motor control modules requiring robust short-circuit ruggedness and low conduction loss at 15 V gate drive.
For engineers reviewing the SIGC42T60NCX1SA4 datasheet, SIGC42T60NCX1SA4 pinout (emitter/gate/collector terminals), SIGC42T60NCX1SA4 application in AC drives, or SIGC42T60NCX1SA4 equivalent bare-die IGBTs, this page delivers verified die-level specifications, thermal and switching behavior under 125°C junction conditions, and validated alternatives for module integration.
Technical Context
This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 4.5–6.5 V and exhibits a collector-emitter saturation voltage of 1.7–2.5 V at 50 A and 15 V gate drive. Its 2200 pF input capacitance and 200 pF reverse transfer capacitance support predictable turn-on/turn-off timing in hard-switched topologies.
Designed for epoxy or soft-solder die bonding, it uses Al–1%Si emitter metallization (3200 nm) and Ni–Ag collector metallization (1400 nm), enabling reliable thermal cycling performance in power modules. The 90° flat orientation and photoimide passivation ensure compatibility with standard wire-bonding processes using ≤500 µm Al wire.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE Rating | 600 V - supports 400 V AC input rectified bus systems with 50% voltage margin |
| IC Continuous | 50 A - rated at Tj = 150 °C with appropriate heatsinking and die attach |
| VCE(sat) | 1.7–2.5 V @ 50 A, 15 V - defines conduction loss and thermal load in inverter legs |
| tf / td(off) | 30 ns / 130 ns @ Tj = 125 °C - determines switching loss and EMI profile in 8–16 kHz drive inverters |
| Chip Size | 6.5 × 6.5 mm² total, 35.6 mm² active - enables compact module layout with defined current density |
| Tj Range | −55 to +150 °C - qualified for industrial ambient and overload conditions without derating |
| Emitter Pad | 2 × (3.0 × 2.85) mm² - supports dual-wire bonding for low-inductance, high-current emitter return |
Pinout & Package
SIGC42T60NCX1SA4 is supplied as a bare die in sawn-on-foil format (Q67041-A4692-A001), with no leadframe or molded package. Terminal identification follows standard IGBT die orientation: top-side metallization defines gate (0.8 × 1.5 mm²), emitter (dual 3.0 × 2.85 mm² pads), and collector (full backside metallization).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter Pads (2) | Power return path for collector current | Dual pads reduce bond wire inductance and current crowding; enable symmetric current distribution in multi-chip modules |
| Gate Pad | Control electrode for channel formation | Small-area pad (0.8 × 1.5 mm²) requires precise wire bonding; compatible with 25–50 µm Al wire |
| Collector (Backside) | Main high-side current path and thermal interface | Full-surface Ni–Ag metallization ensures low-resistance solder or sinter bond to DBC substrate and efficient heat extraction |
Key Features
| Feature | Design Value |
|---|---|
| Positive temperature coefficient | Enables inherent current sharing in paralleled dies without external ballasting resistors |
| NPT device architecture | Provides balanced trade-off between switching speed and short-circuit withstand time (≥10 µs) |
| 100 µm thin wafer processing | Reduces stored charge and tail current, lowering turn-off losses vs. PT/FS IGBTs |
| Photoimide frontside passivation | Withstands >1000 V/µm electric field; prevents surface leakage and humidity-induced degradation |
| ESD-sensitive handling (MIL-STD-883) | Requires grounded workstations and ionized air during assembly to prevent gate oxide damage |
Applications
| Industrial AC Drives | Pump & Compressor Inverters |
|---|---|
Use Scenario: Variable-speed control of 3-phase induction motors in HVAC and factory automation. IC Role / Device Role / Timing Role: Main switching element in 2-level inverter leg; handles 50–150 A RMS output with 8–12 kHz PWM. Use Value: Low VCE(sat) minimizes conduction loss at partial load; positive tempco ensures stable current sharing across parallel dies. | Use Scenario: High-efficiency speed regulation in centrifugal pumps and screw compressors. IC Role / Device Role / Timing Role: High-side switch in three-phase bridge; subjected to repetitive 600 V blocking and 50 A peak current. Use Value: 130 ns turn-off delay enables clean commutation at 10 kHz; 150 A pulsed rating supports startup surge currents. |
| Welding Power Supplies | Railway Traction Converters |
Use Scenario: DC-link chopper and inverter stages in IGBT-based inverter welders. IC Role / Device Role / Timing Role: Fast-switching power stage managing 300–600 V DC bus with high di/dt demands. Use Value: 30 ns fall time reduces switching loss during high-frequency arc stabilization; 200 pF Crss limits Miller-induced false turn-on. | Use Scenario: Auxiliary converter modules supplying onboard control power in locomotive traction systems. IC Role / Device Role / Timing Role: Medium-power DC–DC stage operating at −40 to +85 °C ambient with vibration exposure. Use Value: −55 to +150 °C Tj range accommodates wide thermal cycling; Ni–Ag collector metallization resists thermal fatigue in sintered bonds. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF400R06ME3 | Module-integrated version (600 V/400 A); includes anti-parallel diode and press-fit housing | Pre-assembled solution for PCB-mount inverters; eliminates die bonding and wire bonding steps | Select when system-level integration, reliability validation, and reduced assembly risk outweigh bare-die cost savings |
| IKW40N60H3 | 600 V/40 A TRENCHSTOP™ H3 die; 1.6 V VCE(sat), 100 ns td(off), thinner 70 µm wafer | Better efficiency at light loads; lower gate charge but reduced short-circuit ruggedness (6 µs) | Select for higher-frequency (16–25 kHz), lower-power (<30 kW) drives where switching loss dominates conduction loss |
Compared with FF400R06ME3 and IKW40N60H3, SIGC42T60NCX1SA4 offers superior short-circuit ruggedness and proven thermal stability in multi-die parallel configurations-critical for high-power industrial drives where field reliability and long-term module lifetime are prioritized over marginal efficiency gains.
Availability
SIGC42T60NCX1SA4 is available at Aetrix Electronics and suitable for industrial AC drives, pump/compressor inverters, welding power supplies, and railway auxiliary converters requiring stable component supply and traceable die-lot sourcing.
Supply support for SIGC42T60NCX1SA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.
SIGC42T60NCX1SA4 belongs to Infineon's high-voltage IGBT die portfolio targeting industrial power modules, emphasizing ruggedness, parallel scalability, and long-term reliability in harsh thermal environments.
FAQ
Is SIGC42T60NCX1SA4 supplied with solder preform or die attach material?
No. This is a bare die product with Ni–Ag collector metallization and Al–Si emitter metallization, intended for customer-defined die bonding using epoxy, soft solder (e.g., SnAgCu), or sintering pastes. No pre-applied materials are included.
What is the maximum recommended wire bond diameter for the gate pad?
The gate pad (0.8 × 1.5 mm²) is qualified for aluminum wire bonding up to 50 µm diameter. Larger wires risk pad lift or cratering; 25–38 µm is typical for high-yield assembly with controlled ultrasonic energy and force.
Does SIGC42T60NCX1SA4 include an integrated freewheeling diode?
No. SIGC42T60NCX1SA4 is a single NPT IGBT die without any integrated diode. External anti-parallel diodes-such as IDP40E60 or MUR1560-are required for inductive load commutation in inverter applications.
Can this die be used in SiC hybrid modules?
No. SIGC42T60NCX1SA4 is a silicon-based NPT IGBT die with gate threshold and switching characteristics incompatible with SiC gate drivers. It is designed exclusively for silicon module platforms using ±15 V gate drive and standard 3.3 Ω gate resistors.
SIGC42T60NCX1SA4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 50 A
- Current - Collector Pulsed (Icm):
- 150 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 50A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- 43ns/130ns
- Test Condition:
- 300V, 50A, 3.3Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC42T60NCX1SA4 FAQ
1.How can I place an order for SIGC42T60NCX1SA4 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC42T60NCX1SA4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC42T60NCX1SA4 reliable?
The price and inventory of SIGC42T60NCX1SA4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC42T60NCX1SA4 is usually 5 days.
3.What payment methods are accepted for SIGC42T60NCX1SA4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC42T60NCX1SA4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC42T60NCX1SA4?
SIGC42T60NCX1SA4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC42T60NCX1SA4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC42T60NCX1SA4?
For technical support, including SIGC42T60NCX1SA4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC42T60NCX1SA4 requirements.
6.How does Aetrix verify that SIGC42T60NCX1SA4 is sourced from the original manufacturer or authorized distributors?
All SIGC42T60NCX1SA4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC42T60NCX1SA4 meets industry standards.
7.What is the process for return or replacement of SIGC42T60NCX1SA4?
All SIGC42T60NCX1SA4 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC42T60NCX1SA4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC42T60NCX1SA4 part is unused and in its original packaging.
Return procedure for SIGC42T60NCX1SA4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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