Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies SIGC42T60NCX1SA5

Part No.:
SIGC42T60NCX1SA5
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
Die
Datasheet:
AetrixSIGC42T60NCX1SA5.pdf
Description:
IGBT 3 CHIP 600V WAFER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,367

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SIGC42T60NCX1SA5 from Infineon Technologies is a 600 V, 50 A NPT (Non-Punch-Through) IGBT bare die optimized for high-reliability industrial motor drives. It features a 100 µm chip thickness, positive temperature coefficient for stable parallel operation, and 6.5 × 6.5 mm² active die area with dual emitter pads (2 × 3.0 × 2.85 mm²). Used in compact, thermally constrained IGBT modules for variable-speed drive inverters.

For engineers reviewing the SIGC42T60NCX1SA5 datasheet, SIGC42T60NCX1SA5 pinout (emitter/gate/collector terminals), SIGC42T60NCX1SA5 application in motor drive modules, or SIGC42T60NCX1SA5 equivalent bare-die IGBTs, this page delivers verified die-level electrical specs, thermal behavior, switching timing under 300 V/50 A inductive load, and module integration guidance - not generic IGBT summaries.

Technical Context

This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 4.5–6.5 V and exhibits a collector-emitter saturation voltage of 1.7–2.5 V at 15 V gate drive and 50 A collector current. Its 2200 pF input capacitance and 200 pF reverse transfer capacitance define gate drive strength requirements and cross-talk sensitivity in high-density module layouts.

Switching performance is characterized at Tj = 125 °C, VCC = 300 V, IC = 50 A, and RG = 3.3 Ω, yielding turn-on delay of 43 ns, rise time of 12 ns, turn-off delay of 130 ns, and fall time of 30 ns - values directly impacted by package parasitics and thus validated only in representative module test fixtures.

Key Specifications

ParameterValue and Actual Design Meaning
VCE Rating600 V DC - supports 400 V AC input rectified bus systems with 50% safety margin
IC Continuous50 A - rated at Tjmax, defines thermal design basis for heatsink sizing in module assembly
VCE(sat)1.7–2.5 V @ 15 V VGE, 50 A - determines conduction loss and junction temperature rise under load
VGE(th)4.5–6.5 V - ensures robust noise immunity and predictable turn-on across temperature
Ciss2200 pF - sets minimum gate driver peak current requirement (~1.5 A for 100 ns rise)
td(off)130 ns - critical for dead-time calculation to prevent shoot-through in half-bridge configurations
Tj Range−55 to +150 °C - enables operation in sealed industrial enclosures without forced air cooling

Pinout & Package

Package: Bare die (unmounted silicon chip), 6.5 × 6.5 mm² outline, 100 µm thickness, photoimide passivation, Al–Si 1% emitter metallization, Ni–Ag collector metallization. Designed for epoxy or soft-solder die bonding onto DBC substrates.

Pin/TerminalCircuit RoleDesign Meaning
Emitter Pad (2×)Low-side current return pathDual 3.0 × 2.85 mm² Al pads reduce current density and bond wire count in module assembly
Gate PadControl electrode0.8 × 1.5 mm² Al pad compatible with ≤500 µm aluminum wedge bonding
Collector SurfaceHigh-side power terminalFull backside Ni–Ag metallization enables low-resistance solder attachment to copper baseplate

Key Features

FeatureDesign Value
Positive temperature coefficientEnables stable current sharing without external current-balancing resistors when paralleling multiple dies
NPT technologyProvides soft switching characteristics and reduced tail current versus PT IGBTs, lowering Eoff
100 µm thin waferImproves thermal resistance from junction-to-baseplate in bonded modules, enabling higher power density
ESD-sensitive handlingRequires MIL-STD-883 compliant handling protocols during module assembly to prevent gate oxide damage

Applications

Industrial Motor DrivesPump & Compressor Inverters

Use Scenario: 3-phase inverter stage in HVAC rooftop units operating at 4 kHz PWM frequency with 400 V DC bus.

IC Role / Device Role / Timing Role: Main switching device in 2-level voltage-source inverter leg; handles 50 A RMS output current with <130 ns turn-off delay.

Use Value: Positive tempco and low VCE(sat) enable direct paralleling of two dies per switch position, reducing thermal hotspots and simplifying thermal interface design.

Use Scenario: Compact variable-torque pump controller in water treatment skids, enclosed in IP55 cabinet with ambient up to 65 °C.

IC Role / Device Role / Timing Role: High-side IGBT in half-bridge configuration driving PMSM motor; operates at Tj = 125 °C sustained.

Use Value: 150 °C max junction rating allows derating margin for passive cooling, eliminating need for fan-based thermal management.

Elevator Traction ControllersConveyor System Drives

Use Scenario: Regenerative braking stage in elevator hoist drive, requiring bidirectional energy flow and low switching loss.

IC Role / Device Role / Timing Role: NPT IGBT die used with anti-parallel diode in inverter leg; leverages soft turn-off to minimize voltage overshoot during regeneration.

Use Value: Low tail current and 200 pF Crss reduce snubber component stress and EMI filter size in safety-critical lift control systems.

Use Scenario: Modular conveyor drive unit mounted on steel frame with limited airflow, powered from 380 V AC supply.

IC Role / Device Role / Timing Role: Output stage switch in compact 7.5 kW drive module; die bonded to ceramic DBC substrate with silver sinter paste.

Use Value: 6.5 × 6.5 mm² die size and dual emitter pads support low-inductance interconnect layout, minimizing parasitic oscillation at 8 kHz switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
FF400R12KE41200 V, 400 A module-integrated die; larger footprint (12.5 × 12.5 mm²); higher VCE(sat) (2.1 V typ)Targeted at higher-voltage traction and renewable energy inverters, not 600 V industrial drivesSelect only if system requires >600 V blocking or >100 A per switch position
IKW40N60T600 V, 40 A TO-247 packaged IGBT; trench-field-stop structure; lower Ciss (1400 pF); no bare-die form factorDesigned for discrete PCB-mount designs, not module integration; lacks dual emitter pads and backside metallizationChoose only for prototyping or low-volume board-level builds where module assembly is impractical

Compared with FF400R12KE4 and IKW40N60T, SIGC42T60NCX1SA5 uniquely balances 600 V rating, 50 A capability, bare-die form factor, and NPT soft-switching for cost-sensitive, space-constrained industrial drive modules - neither higher-voltage nor discrete alternatives replicate this integration-ready die specification.

Availability

SIGC42T60NCX1SA5 is available at Aetrix Electronics and suitable for industrial motor drives, pump & compressor inverters, and conveyor system drives requiring stable component supply and long-term module production continuity.

Supply support for SIGC42T60NCX1SA5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with core R&D in power electronics and automotive systems.

SIGC42T60NCX1SA5 belongs to Infineon's high-reliability NPT IGBT die portfolio, engineered specifically for thermally demanding, high-volume industrial inverter modules where parallel operation stability and manufacturable die bonding are critical.

FAQ

Is SIGC42T60NCX1SA5 supplied with solder preform or die attach film?

No. SIGC42T60NCX1SA5 is shipped as a bare die in nitrogen-purged containers with dot-marked orientation. Customers must select and qualify die-attach material-electrically conductive epoxy or soft-solder paste-based on their module substrate (DBC or AMB) and thermal cycling requirements. Infineon specifies Ni–Ag backside metallization for compatibility with both.

What is the maximum allowable gate resistor value for reliable switching?

Based on measured td(off) = 130 ns and Crss = 200 pF, RG must not exceed 3.3 Ω when using ±15 V gate drive to maintain safe turn-off timing margins in 20 kHz PWM systems. Higher RG increases switching losses and risks cross-conduction; lower RG demands >2 A peak gate driver capability to charge Ciss = 2200 pF within 100 ns.

Can SIGC42T60NCX1SA5 be used in 650 V DC bus applications?

No. Its absolute maximum VCE rating is 600 V DC at Tj = 25 °C, derating to ~540 V at Tj = 125 °C. For 650 V bus systems, Infineon recommends 650 V-rated dies such as IGW25N65F5, which maintains 650 V VCE rating across full temperature range and includes integrated field-stop structure.

Does this die include an integrated freewheeling diode?

No. SIGC42T60NCX1SA5 is an IGBT-only bare die. Module designers must integrate a separate fast-recovery anti-parallel diode-such as IDH08SG60C-bonded adjacent to the IGBT die on the same DBC substrate to handle inductive load commutation current.

SIGC42T60NCX1SA5 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
Die
Packaging:
Bulk
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
50 A
Current - Collector Pulsed (Icm):
150 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 50A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
43ns/130ns
Test Condition:
300V, 50A, 3.3Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Die

SIGC42T60NCX1SA5 FAQ

1.How can I place an order for SIGC42T60NCX1SA5 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC42T60NCX1SA5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC42T60NCX1SA5 reliable?

The price and inventory of SIGC42T60NCX1SA5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC42T60NCX1SA5 is usually 5 days.

3.What payment methods are accepted for SIGC42T60NCX1SA5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC42T60NCX1SA5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC42T60NCX1SA5?

SIGC42T60NCX1SA5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC42T60NCX1SA5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC42T60NCX1SA5?

For technical support, including SIGC42T60NCX1SA5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC42T60NCX1SA5 requirements.

6.How does Aetrix verify that SIGC42T60NCX1SA5 is sourced from the original manufacturer or authorized distributors?

All SIGC42T60NCX1SA5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC42T60NCX1SA5 meets industry standards.

7.What is the process for return or replacement of SIGC42T60NCX1SA5?

All SIGC42T60NCX1SA5 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC42T60NCX1SA5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC42T60NCX1SA5 part is unused and in its original packaging.

Return procedure for SIGC42T60NCX1SA5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SIGC42T60NCX1SA5 Tags

  • SIGC42T60NCX1SA5
  • SIGC42T60NCX1SA5 PDF
  • SIGC42T60NCX1SA5 Datasheet
  • SIGC42T60NCX1SA5 Specifications
  • SIGC42T60NCX1SA5 Images
  • Infineon Technologies
  • Infineon Technologies SIGC42T60NCX1SA5
  • Buy SIGC42T60NCX1SA5
  • SIGC42T60NCX1SA5 Price
  • SIGC42T60NCX1SA5 Distributor
  • SIGC42T60NCX1SA5 Supplier
  • SIGC42T60NCX1SA5 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER