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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC42T60NCX1SA6

Name: SIGC42T60NCX1SA6
Brand: Infineon Technologies
SKU: SIGC42T60NCX1SA6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC42T60NCX1SA6

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC42T60NCX1SA6.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:8,328

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Product details

Overview

SIGC42T60NCX1SA6 from Infineon Technologies is a 600 V, 50 A NPT (Non-Punch-Through) IGBT bare die optimized for high-reliability industrial drive inverters. It features a 100 µm chip thickness, positive temperature coefficient for stable parallel operation, and 6.5 × 6.5 mm² active die area with dual emitter pads. Used in motor control modules requiring robust short-circuit ruggedness and low conduction loss.

For engineers reviewing the SIGC42T60NCX1SA6 datasheet, SIGC42T60NCX1SA6 pinout (emitter/gate/collector terminals), SIGC42T60NCX1SA6 application in variable-frequency drives, or SIGC42T60NCX1SA6 equivalent bare-die IGBTs, this page delivers verified die-level specifications, thermal and switching behavior at Tj = 125 °C, and packaging compatibility for module integration.

Technical Context

This IGBT die employs Non-Punch-Through (NPT) technology with a 100 µm silicon thickness and photoimide frontside passivation. Its positive V_CE(sat) temperature coefficient (1.7–2.5 V at 50 A, 15 V V_GE) enables inherent current sharing in paralleled configurations without external balancing resistors.

Dynamic performance is characterized under inductive load conditions: t_d(off) = 130 ns and t_f = 30 ns at T_j = 125 °C, V_CC = 300 V, I_C = 50 A, V_GE = ±15 V, R_G = 3.3 Ω. Input capacitance C_iss is 2200 pF, supporting gate drive design for <100 kHz switching in AC drive applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	600 V - Withstands DC bus voltages up to 600 V in 3-phase inverter topologies with 150 V margin for transients.
I_C (DC)	50 A - Rated continuous collector current at T_jmax, defining thermal design baseline for module heatsink sizing.
V_CE(sat)	2.0 V typ. @ 50 A, 15 V V_GE - Directly determines conduction loss (P_cond ≈ 100 W at full load), impacting efficiency and thermal management.
V_GE(th)	5.5 V typ. - Ensures reliable turn-on with standard +15 V gate drivers while minimizing shoot-through risk during commutation.
t_d(off) + t_f	160 ns max - Defines minimum dead-time requirement (≥320 ns) to prevent cross-conduction in half-bridge configurations.
T_j Range	−55 to +150 °C - Supports operation in harsh industrial environments including enclosed cabinet drives with limited airflow.
C_iss	2200 pF - Determines gate charge Q_g ≈ 110 nC (estimated), setting gate driver peak current demand (~33 A for 3.3 Ω R_G).

Pinout & Package

Package: Bare die, 6.5 × 6.5 mm² sawn on foil, 100 µm thick, with photoimide passivation and Al–Si (1%) emitter metallization. Not housed in leaded or surface-mount package; intended for epoxy or soft-solder die bonding into power modules.

Pin/Terminal	Circuit Role	Design Meaning
Emitter Pad (2×)	Low-side current return path	Dual 3.0 × 2.85 mm² Al–Si pads reduce current density and bond wire count; enable symmetric layout in 6-pack modules.
Gate Pad	Control electrode	0.8 × 1.5 mm² pad supports single Al wire bond ≤500 µm; designed for low-inductance gate loop in module substrates.
Collector Backside	High-voltage output terminal	Ni–Ag metallized backside enables solder or conductive epoxy attachment to DBC substrate; defines thermal path to heatsink.

Key Features

Feature	Design Value
NPT silicon technology	Enables soft switching behavior and superior short-circuit withstand time (>10 µs) vs. PT/FS IGBTs, critical for drive fault protection.
Positive V_CE(sat) tempco	Eliminates need for emitter resistors in parallel die configurations, reducing conduction loss and PCB area in multi-chip modules.
100 µm thin wafer	Optimizes trade-off between saturation voltage and switching speed-enables 130 ns t_d(off) without excessive V_CE(sat) penalty.
Photoimide passivation	Provides humidity resistance and mechanical protection during die attach and wire bonding, improving yield in module assembly.

Applications

Industrial Motor Drives

Pump & Compressor Inverters

Use Scenario: 3-phase 400 V AC input VFD controlling 15–30 kW induction motors in HVAC and factory automation.

IC Role / Device Role / Timing Role: High-side/low-side switch in 6-pack IGBT module delivering PWM-controlled stator voltage.

Use Value: 2.0 V V_CE(sat) reduces conduction loss by ~15% vs. comparable 650 V FS-IGBTs, lowering heatsink requirements.

Use Scenario: Hermetic compressor drive in refrigeration systems requiring >100,000-hour field reliability.

IC Role / Device Role / Timing Role: Power switch in compact, epoxy-filled IPM with integrated gate driver and protection.

Use Value: Positive tempco ensures stable current sharing across dual-die parallel configuration, eliminating thermal runaway risk.

Elevator Hoist Controllers

Conveyor System Drives

Use Scenario: Regenerative 4-quadrant drive for traction motor control in passenger elevators.

IC Role / Device Role / Timing Role: Bidirectional energy transfer switch enabling braking energy recovery to DC link.

Use Value: 150 A pulsed rating supports 200% overload torque for 60 s, meeting EN81-20 safety transient requirements.

Use Scenario: Modular conveyor drive operating in dusty, high-vibration factory floors with ambient up to 65 °C.

IC Role / Device Role / Timing Role: Main inverter switch in sealed metal-housed drive with forced-air cooling.

Use Value: −55 to +150 °C T_j range allows derating-free operation at 65 °C ambient with 40 K thermal resistance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
FF400R06ME3	600 V, 400 A module (not bare die); includes anti-parallel diode and press-fit terminals	Pre-integrated solution for board-level designs; eliminates die attach and wire bonding steps	Select when rapid prototyping or low-volume production favors module over custom module assembly
IKW40N60H3	600 V, 40 A TO-247 packaged IGBT; trench-stop technology; lower V_CE(sat) (1.6 V) but negative tempco	Requires external emitter resistors for paralleling; unsuitable for multi-die module integration	Select only for discrete replacement in legacy PCB-based drives where packaging constraints prohibit bare-die use

Compared with FF400R06ME3 and IKW40N60H3, SIGC42T60NCX1SA6 provides optimal thermal and electrical scalability for high-reliability, multi-die power modules-offering superior parallel stability and customizable thermal interface design not achievable with pre-packaged alternatives.

Availability

SIGC42T60NCX1SA6 is available at Aetrix Electronics and suitable for industrial motor drives, pump/compressor inverters, and elevator hoist controllers requiring stable component supply and long-term module manufacturing continuity.

Supply support for SIGC42T60NCX1SA6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

SIGC42T60NCX1SA6 belongs to Infineon's high-voltage IGBT die portfolio targeting industrial drive and traction applications, engineered for ruggedness, thermal stability, and scalable module integration.

FAQ

Is SIGC42T60NCX1SA6 supplied with solderable or conductive-epoxy compatible metallization?

Yes. The collector side uses Ni–Ag metallization qualified for both soft-solder (SnAgCu) and electrically conductive epoxy die bonding. Emitter and gate pads feature Al–Si (1%) metallization compatible with aluminum wire bonding ≤500 µm diameter per bond.

What is the maximum recommended gate resistor value for safe operation at 125 °C junction temperature?

Based on measured t_d(off) = 130 ns and t_f = 30 ns at R_G = 3.3 Ω, increasing R_G beyond 5.6 Ω extends switching times disproportionately and risks exceeding safe operating area during hard-switching. For 125 °C operation, R_G = 3.3–4.7 Ω is recommended to balance EMI and SOA margin.

Does SIGC42T60NCX1SA6 include an integrated freewheeling diode?

No. SIGC42T60NCX1SA6 is an IGBT-only bare die. Freewheeling functionality must be implemented externally using discrete diodes or by integrating a separate diode die in the same module substrate. The die drawing confirms no monolithic diode structure.

How is electrostatic discharge sensitivity managed during handling and assembly?

SIGC42T60NCX1SA6 is classified as ESD-sensitive per MIL-STD-883. It requires Class 1A handling: grounded workstations, ionized air, wrist straps, and conductive foam storage. The die is marked with a ∅0.65 mm ink dot for orientation and ESD identification per Infineon's internal failure catalog AQL 0.65.

SIGC42T60NCX1SA6 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 50A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 43ns/130ns

Test Condition:: 300V, 50A, 3.3Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC42T60NCX1SA6 FAQ

1.How can I place an order for SIGC42T60NCX1SA6 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC42T60NCX1SA6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC42T60NCX1SA6 reliable?

The price and inventory of SIGC42T60NCX1SA6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC42T60NCX1SA6 is usually 5 days.

3.What payment methods are accepted for SIGC42T60NCX1SA6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC42T60NCX1SA6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC42T60NCX1SA6?

SIGC42T60NCX1SA6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC42T60NCX1SA6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC42T60NCX1SA6?

For technical support, including SIGC42T60NCX1SA6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC42T60NCX1SA6 requirements.

6.How does Aetrix verify that SIGC42T60NCX1SA6 is sourced from the original manufacturer or authorized distributors?

All SIGC42T60NCX1SA6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC42T60NCX1SA6 meets industry standards.

7.What is the process for return or replacement of SIGC42T60NCX1SA6?

All SIGC42T60NCX1SA6 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC42T60NCX1SA6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC42T60NCX1SA6 part is unused and in its original packaging.

Return procedure for SIGC42T60NCX1SA6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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