Infineon Technologies SIGC42T60SNCX1SA1

Overview

SIGC42T60SNC from Infineon Technologies is a 600 V, 50 A NPT (Non-Punch-Through) IGBT die optimized for high-efficiency motor drives. It features a 6.5 × 6.5 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, and low V_CE(sat) of 2.0 V typ. at 50 A/15 V_GE, enabling compact inverter designs in industrial AC drives.

For engineers reviewing the SIGC42T60SNC datasheet, SIGC42T60SNC pinout, SIGC42T60SNC application, or SIGC42T60SNC equivalent, key selection criteria include its 532 ns max turn-off delay at 150 °C, 3190 pF max input capacitance, 182 pF max reverse transfer capacitance, and suitability for epoxy or soft-solder die bonding in module assembly.

Technical Context

This IGBT die employs Non-Punch-Through (NPT) technology with a 100 µm silicon thickness and photoimide frontside passivation. Its emitter metallization uses 3200 nm AlSi1%, collector uses 1400 nm NiAg, and gate pad measures 0.8 × 1.5 mm² - all specified for reliable wire bonding with ≤500 µm Al wire.

The device delivers 40% faster turn-off than Standard IGBT 2 under comparable 400 V/50 A inductive switching conditions (R_G = 6.8 Ω), with dynamic parameters measured at T_j = 150 °C, V_CC = 400 V, and V_GE = +15/0 V - reflecting real-world high-temperature module operation.

Key Specifications

Pinout & Package

SIGC42T60SNC is a bare die (unpacked chip) with no leadframe or molded package. It is supplied on foil (Q67050-A4181-A001) or unsawn wafer format (Q67050-A4181-A002), intended for integration into custom IGBT modules via die attach and wire bonding.

Key Features

Applications

Availability

SIGC42T60SNC is available at Aetrix Electronics and suitable for industrial AC motor drives, uninterruptible power supplies (UPS), solar string inverters, and induction heating systems requiring stable component supply and long-lifecycle module manufacturing support.

Supply support for SIGC42T60SNC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

SIGC42T60SNC belongs to Infineon's high-voltage discrete IGBT die portfolio, designed specifically for module integrators building rugged, thermally efficient power conversion systems in harsh industrial environments.

FAQ

Is SIGC42T60SNC supplied in tape-and-reel or tray packaging?

No. SIGC42T60SNC is a bare die product offered only in two formats: sawn on foil (ordering code Q67050-A4181-A001) or unsawn wafer (Q67050-A4181-A002). It requires die-attach and wire-bonding into custom modules and is not packaged for direct PCB mounting.

What is the recommended die attach method for SIGC42T60SNC?

Infineon specifies compatibility with both electrically conductive glue and soft-solder die bonding. The NiAg collector metallization (1400 nm) is qualified for epoxy-based conductive adhesives and SnAgCu or PbSn solder alloys, supporting thermal cycling reliability per JESD22-A104.

Does SIGC42T60SNC require gate resistor tuning for paralleling?

Due to its positive temperature coefficient, SIGC42T60SNC enables stable current sharing without individual gate resistors. However, matched layout symmetry and identical gate loop inductance (< 5 nH difference per die) are required to prevent dynamic current imbalance during switching transitions.

Can SIGC42T60SNC be used in 650 V DC-link applications?

No. With a rated V_CE of 600 V and V_(BR)CES of 600 V min, SIGC42T60SNC is not rated for 650 V DC-link operation. For such applications, Infineon's 650 V TRENCHSTOP™ IGBT dies (e.g., IGW25N65F5) are specified and characterized for 100% overvoltage margin.