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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC42T60SNCX1SA2

Name: SIGC42T60SNCX1SA2
Brand: Infineon Technologies
SKU: SIGC42T60SNCX1SA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC42T60SNCX1SA2

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC42T60SNCX1SA2.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIGC42T60SNC from Infineon Technologies is a 600 V, 50 A NPT (Non-Punch-Through) IGBT die optimized for high-reliability power modules in industrial motor drives. It features a 6.5 × 6.5 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, and low V_CE(sat) of 1.7–2.5 V at 50 A/15 V_GE. Used in 3-phase inverter stages of HVAC and servo drives.

For engineers reviewing the SIGC42T60SNC datasheet, SIGC42T60SNC pinout (emitter/gate/collector terminals), SIGC42T60SNC application in motor drive modules, or SIGC42T60SNC equivalent for IGBT die replacement, this page delivers verified die-level specifications, thermal and switching performance data, and module integration guidance - not generic IGBT summaries.

Technical Context

This NPT IGBT die employs planar gate structure and Al–Si 1% emitter metallization with Ni–Ag collector system, enabling robust epoxy and soft-solder die bonding. Its 35.6 mm² active area within a 42.25 mm² total die footprint supports high current density while maintaining thermal stability up to +150 °C junction temperature.

Dynamic performance is characterized by 380–532 ns turn-off delay and 80–112 ns fall time under 400 V, 50 A, 15 V/0 V gate drive with 6.8 Ω gate resistor - delivering ~40% faster turn-off than Standard IGBT 2 under comparable conditions, with Crss of 153–182 pF limiting Miller-induced dv/dt sensitivity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - maximum blocking voltage for 3-phase 400 V AC input inverters with 2× DC bus margin
I_C	50 A DC - continuous collector current rating at T_j = 150 °C, defining module current class
V_CE(sat)	1.7–2.5 V @ 50 A, 15 V_GE - direct impact on conduction loss and thermal design of heatsink
t_d(off)	380–532 ns - critical for dead-time setting and EMI control in PWM switching
C_iss	2660–3190 pF - gate input capacitance determining required gate driver peak current
T_j range	−55 to +150 °C - enables operation in harsh industrial environments without derating
Die size	6.5 × 6.5 mm² - standard footprint compatible with Q67050-A4181-A001/A002 module substrates

Pinout & Package

SIGC42T60SNC is a bare die (unpackaged chip) supplied on foil or unsawn wafer format. It has three terminals: Collector (backside metallization), Emitter (two 3.0 × 2.85 mm² Al pads), and Gate (0.8 × 1.5 mm² Al pad). No leadframe or molded package is present.

Pin/Terminal	Circuit Role	Design Meaning
Emitter pad (2×)	Main current return path and gate reference	Dual large-area pads reduce bond wire count and parasitic inductance in module assembly
Gate pad	Control electrode for channel formation	Small 0.8 × 1.5 mm² pad requires precise wire bonding; low C_iss/C_rss ratio improves noise immunity
Collector (backside)	High-side power terminal	Ni–Ag metallization enables solder or conductive epoxy attachment to DBC substrate; electrically common with module baseplate

Key Features

Feature	Design Value
Positive temperature coefficient	Enables stable current sharing in paralleled dies without external current-balancing resistors
NPT technology	Provides soft switching behavior and reduced tail current vs. PT IGBTs, lowering EMI and snubber stress
100 µm thin die	Reduces thermal resistance from junction-to-substrate, improving power cycling capability in modules
Photoimide passivation	Frontside protection against moisture and contamination during module assembly and reflow
ESD-sensitive handling	Requires MIL-STD-883 compliant ESD controls during die attach to prevent gate oxide damage

Applications

Industrial Motor Drives

HVAC Inverter Systems

Use Scenario: Three-phase 400 V AC input inverter stage driving 7.5–15 kW induction motors in pump/fan applications.

IC Role / Device Role / Timing Role: Main switching device in 6-pack IGBT module; operates at 2–8 kHz PWM frequency with controlled dv/dt.

Use Value: Low V_CE(sat) reduces conduction losses by ~12% vs. legacy 600 V IGBT dies, directly lowering heatsink size and cost.

Use Scenario: Variable-speed compressor control in commercial rooftop HVAC units requiring high reliability over 15-year field life.

IC Role / Device Role / Timing Role: High-side switch in H-bridge configuration; subjected to repetitive thermal cycling and humidity exposure.

Use Value: 100 µm NPT die with Ni–Ag collector metallization achieves >10⁵ power cycles at ΔT_j = 100 K, meeting ASHRAE 188 durability requirements.

Servo Drive Power Stages

Renewable Energy Converters

Use Scenario: Compact 3 kW servo amplifier with space-constrained module layout and fast dynamic response demands.

IC Role / Device Role / Timing Role: Low-inductance half-bridge die pair; switched at 16–20 kHz with <100 ns dead time.

Use Value: 40% faster t_d(off) vs. Standard IGBT 2 allows tighter dead-time control, increasing output voltage utilization by ~3.2% at full modulation.

Use Scenario: Grid-tied solar string inverter DC–AC stage operating in ungrounded transformerless topology.

IC Role / Device Role / Timing Role: High-voltage bridge leg switch; exposed to 1000 V DC bus transients and partial discharge stress.

Use Value: 600 V V_CE rating with 2.5 kV isolation test compliance ensures long-term reliability under 1500 V DC system voltage standards (IEC 62109).

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N60T	600 V/40 A trench-gate IGBT die; lower V_CE(sat) (1.55 V typ), higher C_iss (3900 pF)	Better efficiency at light load; less suitable for high-frequency switching due to higher gate charge	Select when optimizing for <5 kHz operation and minimal conduction loss; verify gate driver capability for 3.9 nC Q_g
FGH40N60UFD	600 V/40 A ultrafast IGBT die; t_f = 35 ns (vs. 80–112 ns), V_CE(sat) = 2.2 V (typ)	Superior for >20 kHz servo switching but higher conduction loss at rated current	Prefer for high-bandwidth motion control where switching loss dominates; avoid in high-current continuous duty

Compared with IKW40N60T and FGH40N60UFD, SIGC42T60SNC offers balanced trade-offs: moderate switching speed with proven NPT ruggedness, ideal for industrial drives where reliability and thermal cycling endurance outweigh peak efficiency gains.

Availability

SIGC42T60SNC is available at Aetrix Electronics and suitable for industrial motor drives, HVAC inverter systems, servo drive power stages, and renewable energy converters requiring stable component supply across multi-year production programs.

Supply support for SIGC42T60SNC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

SIGC42T60SNC belongs to Infineon's high-voltage discrete IGBT die portfolio, designed specifically for integration into custom and standard power modules targeting industrial automation and energy conversion systems.

FAQ

Is SIGC42T60SNC supplied in tape-and-reel or waffle pack?

No - SIGC42T60SNC is delivered as bare die only: either sawn on foil (Q67050-A4181-A001) or unsawn (Q67050-A4181-A002). It requires die-attach and wire-bonding into a module substrate; no surface-mount packaging is provided.

What is the recommended gate resistor value for optimal switching performance?

Infineon specifies 6.8 Ω for characterization (t_d(off), t_f). For actual module use, 10–15 Ω is typical to limit dv/dt and oscillation; values below 5 Ω risk shoot-through in paralleled configurations due to mismatched propagation delays.

Can SIGC42T60SNC be used in 650 V DC bus applications?

No - its absolute maximum V_CE is 600 V at T_j = 25 °C, derating to ~540 V at 150 °C. For 650 V DC bus, a 650 V or 750 V rated IGBT die (e.g., IKW50N65ET7) is required to maintain safe operating area margin.

Does this die support press-fit or sintered die attach?

Yes - the Ni–Ag collector metallization is qualified for both soft-solder (SnAgCu) and sintered Ag paste attachment. Press-fit is not supported; mechanical clamping requires additional thermal interface and is not validated by Infineon for this die.

SIGC42T60SNCX1SA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 50A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 57ns/380ns

Test Condition:: 400V, 50A, 6.8Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC42T60SNCX1SA2 FAQ

1.How can I place an order for SIGC42T60SNCX1SA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC42T60SNCX1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC42T60SNCX1SA2 reliable?

The price and inventory of SIGC42T60SNCX1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC42T60SNCX1SA2 is usually 5 days.

3.What payment methods are accepted for SIGC42T60SNCX1SA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC42T60SNCX1SA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC42T60SNCX1SA2?

SIGC42T60SNCX1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC42T60SNCX1SA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC42T60SNCX1SA2?

For technical support, including SIGC42T60SNCX1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC42T60SNCX1SA2 requirements.

6.How does Aetrix verify that SIGC42T60SNCX1SA2 is sourced from the original manufacturer or authorized distributors?

All SIGC42T60SNCX1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC42T60SNCX1SA2 meets industry standards.

7.What is the process for return or replacement of SIGC42T60SNCX1SA2?

All SIGC42T60SNCX1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC42T60SNCX1SA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC42T60SNCX1SA2 part is unused and in its original packaging.

Return procedure for SIGC42T60SNCX1SA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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