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Infineon Technologies SIGC54T60R3EX1SA3
- Part No.:
- SIGC54T60R3EX1SA3
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC54T60R3EX1SA3.pdf
- Description:
- IGBT TRENCH FS 600V 100A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:7,844
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Product details
Overview
SIGC54T60R3EX1SA3 from Infineon Technologies is a 600 V, 100 A rated TRENCHSTOP™ IGBT3 bare die with trench & field-stop technology, low VCE(sat) (1.45 V typ. @ 100 A), short tail current, and positive temperature coefficient for stable paralleling-designed for high-efficiency industrial motor drives and resonant power converters.
For engineers reviewing the SIGC54T60R3EX1SA3 datasheet, SIGC54T60R3EX1SA3 pinout, SIGC54T60R3EX1SA3 application, or SIGC54T60R3EX1SA3 equivalent, key selection considerations include its 6 µs short-circuit withstand time at 150 °C, 6160 pF input capacitance, 5.97 mm × 8.97 mm die size, and wafer-level characterization of VGE(th), Cies, and RBSOA.
Technical Context
This bare die implements Infineon's third-generation TRENCHSTOP IGBT architecture with integrated gate resistor (2 Ω) and photoimide passivation. It delivers low conduction loss (VCE(sat) = 1.45 V typ.) and reduced turn-off energy via optimized carrier lifetime control and field-stop layer design.
The device operates across –40 °C to +175 °C junction temperature, supports ±20 V gate drive, and is characterized for RBSOA (200 A / 600 V, ≤150 °C) and short-circuit robustness (6 µs @ VCC = 360 V, VGE = 15 V, Tvj = 150 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 600 V - Maximum blocking voltage for 600 V DC bus applications like industrial inverters |
| ICn | 100 A - Rated continuous collector current at Tvj max, defining thermal design baseline |
| VCE(sat) | 1.45 V (typ.) @ 100 A, 15 V - Directly determines conduction loss and heatsink sizing |
| tsc | 6 µs - Short-circuit withstand time enabling fast protection circuit response |
| Cies | 6160 pF - Input capacitance affecting gate drive power and switching speed trade-offs |
| VGE(th) | 5.8 V (typ.) - Threshold voltage influencing noise immunity and gate driver voltage margin |
| rG | 2 Ω - Integrated gate resistor simplifying external gate network and damping oscillation |
Pinout & Package
Package: Bare die on foil, 5.97 mm × 8.97 mm, silicon thickness 70 µm, 200 mm wafer, Ni/Ag backside metallization.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E (Emitter) | Main emitter connection | Large-area AlSiCu pad for low-inductance, high-current emitter bond-out |
| G (Gate) | Control terminal | 1.62 mm × 0.82 mm Al pad; requires precise gate drive routing to minimize ringing |
| T (Test pad) | Process monitoring | Non-functional pad for wafer-level parametric testing; not connected in final assembly |
Key Features
| Feature | Design Value |
|---|---|
| Trench & field-stop structure | Enables 600 V rating with low VCE(sat) and controlled tail current for soft switching |
| Positive VCE(sat) temperature coefficient | Ensures inherent current sharing when paralleling multiple dies without external balancing resistors |
| Integrated 2 Ω gate resistor | Reduces external component count and improves gate loop stability in high-dI/dt modules |
| Photoimide frontside passivation | Provides mechanical protection and humidity resistance during die attach and module encapsulation |
Applications
| Industrial Motor Drives | Resonant Converters |
|---|---|
Use Scenario: Three-phase inverter stage in HVAC compressors and pump drives operating at 4–16 kHz switching frequency. IC Role / Device Role / Timing Role: Main switching device in the upper/lower leg; handles 100 A RMS output current with <1.5 V conduction drop. Use Value: Low VCE(sat) and short tail current reduce total losses by ~12% vs. prior-gen IGBTs at 10 kHz, improving system efficiency and thermal margin. | Use Scenario: Half-bridge switch in LLC resonant DC-DC converters for server PSUs and telecom rectifiers. IC Role / Device Role / Timing Role: High-side switching element synchronized to zero-voltage switching (ZVS) transitions. Use Value: Controlled turn-off characteristics and low Coes (384 pF) support reliable ZVS operation up to 300 kHz with minimal voltage overshoot. |
| Power Modules | White Goods Inverters |
Use Scenario: Embedded in 6-pack half-bridge modules for industrial servo drives requiring >50 kA short-circuit robustness. IC Role / Device Role / Timing Role: One of six identical dies per module, configured for parallel operation with matched VGE(th) and VCE(sat). Use Value: Positive temperature coefficient enables current sharing within ±8% mismatch across dies, eliminating need for emitter resistors. | Use Scenario: Inverter stage in washing machine drum motors with variable-speed, sensorless FOC control. IC Role / Device Role / Timing Role: Discrete switching element mounted on direct-bonded copper (DBC) substrate with thermally conductive epoxy die attach. Use Value: 175 °C maximum junction temperature rating allows compact heatsink design while maintaining >10-year lifetime under cyclic thermal stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKW40N60H3 | Bare die variant of same IGBT3 family; identical VCE, VCE(sat), and tsc, but rated for 40 A (not 100 A) | Targeted for lower-power modules (<5 kW); unsuitable for 100 A designs without paralleling | Select only if system current requirement is ≤40 A and footprint allows larger die count |
| IGW25N120H3 | 1200 V, 25 A die; higher voltage rating but lower current capability and higher VCE(sat) (1.7 V typ.) | Used in medium-voltage industrial UPS and traction inverters where 600 V is insufficient | Choose only when bus voltage exceeds 650 V; not interchangeable due to voltage/current mismatch |
Compared with IKW40N60H3 and IGW25N120H3, SIGC54T60R3EX1SA3 uniquely balances 600 V blocking, 100 A current handling, and low-loss switching for cost-sensitive 5–15 kW industrial inverters-neither alternative matches this specific power density and thermal profile.
Availability
SIGC54T60R3EX1SA3 is available at Aetrix Electronics and suitable for industrial motor drives, resonant DC-DC converters, and power module assembly requiring stable component supply and wafer-level traceability.
Supply support for SIGC54T60R3EX1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing infrastructure.
SIGC54T60R3EX1SA3 belongs to the TRENCHSTOP™ IGBT3 die family, engineered specifically for high-reliability, high-power-density industrial power conversion systems requiring robust short-circuit behavior and thermal stability.
FAQ
Is SIGC54T60R3EX1SA3 qualified for automotive applications?
No. This bare die is not qualified to AEC-Q101 or any automotive standard. Infineon explicitly states in the datasheet that it is not intended for automotive use, and no automotive-grade screening, testing, or qualification data is provided. It is designed and specified solely for industrial power control applications.
What is the recommended die attach method for SIGC54T60R3EX1SA3?
Infineon specifies electrically conductive epoxy glue or soft solder for die bonding. The Ni/Ag backside metallization is optimized for solder attachment, and the datasheet warns against fully consuming the Ni layer during reflow to ensure long-term intermetallic reliability and thermal interface integrity.
Does SIGC54T60R3EX1SA3 include an integrated anti-parallel diode?
No. As a bare IGBT die, SIGC54T60R3EX1SA3 contains only the IGBT structure. It does not integrate a freewheeling diode. System-level reverse recovery must be handled externally-typically using discrete Si or SiC freewheeling diodes co-packaged in the same module.
Can SIGC54T60R3EX1SA3 be operated above 150 °C junction temperature?
Yes-the absolute maximum virtual junction temperature is +175 °C. However, short-circuit capability (6 µs) and RBSOA are only specified up to 150 °C. Operation above 150 °C is permitted for normal switching, but derating of current and voltage ratings, plus enhanced thermal monitoring, is required to maintain reliability.
SIGC54T60R3EX1SA3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 100 A
- Current - Collector Pulsed (Icm):
- 300 A
- Vce(on) (Max) @ Vge, Ic:
- 1.85V @ 15V, 100A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC54T60R3EX1SA3 FAQ
1.How can I place an order for SIGC54T60R3EX1SA3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC54T60R3EX1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC54T60R3EX1SA3 reliable?
The price and inventory of SIGC54T60R3EX1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC54T60R3EX1SA3 is usually 5 days.
3.What payment methods are accepted for SIGC54T60R3EX1SA3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC54T60R3EX1SA3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC54T60R3EX1SA3?
SIGC54T60R3EX1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC54T60R3EX1SA3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC54T60R3EX1SA3?
For technical support, including SIGC54T60R3EX1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC54T60R3EX1SA3 requirements.
6.How does Aetrix verify that SIGC54T60R3EX1SA3 is sourced from the original manufacturer or authorized distributors?
All SIGC54T60R3EX1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC54T60R3EX1SA3 meets industry standards.
7.What is the process for return or replacement of SIGC54T60R3EX1SA3?
All SIGC54T60R3EX1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC54T60R3EX1SA3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC54T60R3EX1SA3 part is unused and in its original packaging.
Return procedure for SIGC54T60R3EX1SA3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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