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Infineon Technologies SIGC61T60NCX1SA1
- Part No.:
- SIGC61T60NCX1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC61T60NCX1SA1.pdf
- Description:
- IGBT 3 CHIP 600V WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:4,836
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Product details
Overview
SIGC61T60NCX1SA1 from Infineon Technologies is a 600 V, 75 A NPT (Non-Punch-Through) IGBT die designed for high-reliability power switching in industrial motor drives. It features a 100 µm chip thickness, positive temperature coefficient for stable paralleling, short-circuit ruggedness up to 10 µs, and emitter-collector saturation voltage of 2.1 V typ. at 75 A/15 V gate drive. Used in Econo Pack2 modules like BSM75GD60DLC.
For engineers reviewing the SIGC61T60NCX1SA1 datasheet, SIGC61T60NCX1SA1 pinout (emitter/gate/collector terminals), SIGC61T60NCX1SA1 application in motor drives, or SIGC61T60NCX1SA1 equivalent for IGBT die replacement, this page delivers verified die-level specifications, mechanical layout, thermal behavior, and module-integration context - not generic IGBT guidance.
Technical Context
This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 5.5 V typ. and exhibits a positive temperature coefficient for VCE(sat), enabling inherently stable current sharing in parallel configurations. Its 6.99 × 8.79 mm² die area supports 75 A DC collector current at Tj = 150 °C when mounted on appropriate substrates.
Dynamic performance includes 65 ns turn-on delay, 25 ns rise time, 170 ns turn-off delay, and 35 ns fall time under standardized inductive-switching conditions (VCC = 300 V, IC = 75 A, Tj = 125 °C, RG = 3 Ω). Input capacitance is 3300 pF, reverse transfer capacitance is 300 pF at VCE = 25 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE Rating | 600 V - maximum blocking voltage before avalanche; defines use in 400–480 V AC input systems with safety margin |
| IC (DC) | 75 A - continuous collector current at Tj = 150 °C; sets thermal design baseline for heatsink sizing |
| VCE(sat) | 2.1 V typ. @ 75 A, 15 V - directly determines conduction loss and junction temperature rise under load |
| VGE(th) | 5.5 V typ. - ensures robust noise immunity against false turn-on in noisy industrial environments |
| tsc Capability | 10 µs short-circuit withstand - enables protection window for desaturation detection circuits without external snubbers |
| Tj Range | −55 °C to +150 °C - supports operation in harsh ambient conditions including enclosed drive cabinets |
| Ciss | 3300 pF - governs gate drive power requirement and influences switching speed vs. EMI trade-off |
Pinout & Package
SIGC61T60NCX1SA1 is a bare die (chip) in sawn-on-foil format, not housed in a leaded or surface-mount package. It features three electrically isolated metallized pads: one large emitter pad (2 × 2.98 × 5.48 mm), one small gate pad (0.8 × 1.5 mm), and a collector backside metallization (Ni/Ag system). Die thickness is 100 µm; total die area is 6.99 × 8.79 mm².
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter Pad | Main current return path and reference node for gate drive | Two symmetric 2.98 × 5.48 mm AlSi1% pads reduce current density and bond wire stress during 75 A switching |
| Gate Pad | Control terminal for MOS-controlled bipolar conduction | 0.8 × 1.5 mm photoimide-passivated pad accepts ≤500 µm Al wire bonds; optimized for low-inductance gate loop |
| Collector (Backside) | High-side power terminal and thermal interface | Ni/Ag metallization enables reliable epoxy or soft-solder die attach to DBC substrates in press-pack or module assemblies |
Key Features
| Feature | Design Value |
|---|---|
| Positive Temperature Coefficient of VCE(sat) | Enables inherent current balancing in multi-die parallel configurations without active current-sharing circuitry |
| Short-Circuit Withstand Time | 10 µs at Tj = 125 °C - provides deterministic timing window for desaturation fault detection and safe shutdown |
| NPT Device Architecture | Eliminates tail current, reducing turn-off losses by ~30% vs. PT IGBTs at same voltage rating and current level |
| 100 µm Thin Wafer Processing | Improves thermal resistance (RthJC) by ~15% compared to 150 µm equivalents, enhancing power density in compact modules |
| Epoxy- and Solder-Compatible Metallization | Ni/Ag collector layer supports dual die-attach processes - critical for mixed-technology module manufacturing |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Three-phase inverter stage in 30–50 kW variable-frequency drives for pumps and compressors. IC Role / Device Role / Timing Role: Main switching device in 6-pulse inverter leg; handles 75 A RMS output current with 2 kHz PWM frequency. Use Value: Positive VCE(sat) TC enables direct paralleling of two dies per switch position, eliminating external current-sharing resistors and reducing conduction loss by 12%. | Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from rectified DC bus. IC Role / Device Role / Timing Role: Inverter-stage IGBT in full-bridge topology; switches at 8–16 kHz with soft-switching assistance. Use Value: 10 µs short-circuit capability aligns precisely with digital signal processor (DSP)-based fault response latency, ensuring no destructive failure during grid transients. |
| Welding Equipment | Renewable Energy Inverters |
Use Scenario: Primary inverter in IGBT-based inverter welders delivering pulsed 200–300 A DC output. IC Role / Device Role / Timing Role: High-duty-cycle switching element operating at 20–50 kHz with 60% duty cycle and 10 ms burst intervals. Use Value: 150 °C max junction temperature rating allows sustained operation at 135 °C case temperature in sealed enclosures without derating. | Use Scenario: DC–AC stage in 25–35 kW string inverters for commercial rooftop solar installations. IC Role / Device Role / Timing Role: Low-loss switching device in NPC (Neutral Point Clamped) topology handling 400–800 V DC input. Use Value: NPT structure eliminates tail current, cutting turn-off energy (Eoff) by 28% vs. comparable PT IGBTs - directly increasing inverter efficiency from 97.1% to 97.5%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKB20N60T | 600 V, 20 A TRENCHSTOP™ IGBT die; lower current rating, higher VCE(sat) (2.3 V) | Targeted at <15 kW drives; lacks short-circuit ruggedness spec | Select only for cost-sensitive, lower-power designs where paralleling is unnecessary |
| FF400R12KE4 | 1200 V, 400 A dual IGBT module; includes integrated diodes and NTC, not bare die | Used in medium-voltage traction inverters; incompatible form factor and assembly process | Choose only when full module integration (not die-level customization) is required |
Compared with IKB20N60T and FF400R12KE4, SIGC61T60NCX1SA1 uniquely balances 75 A current capability, 10 µs short-circuit tolerance, and NPT-based low Eoff - making it the only option among the three qualified for high-power, paralleled, module-integrated industrial drives.
Availability
SIGC61T60NCX1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), welding equipment, and renewable energy inverters requiring stable component supply, long-lifecycle support, and traceable die-level sourcing.
Supply support for SIGC61T60NCX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.
SIGC61T60NCX1SA1 belongs to Infineon's high-reliability NPT IGBT die portfolio, engineered specifically for module manufacturers building industrial-grade power conversion systems demanding ruggedness, thermal stability, and paralleling flexibility.
FAQ
Is SIGC61T60NCX1SA1 a packaged device or a bare die?
SIGC61T60NCX1SA1 is a bare silicon die - not encapsulated or leaded. It measures 6.99 × 8.79 mm², has aluminum emitter/gate pads and Ni/Ag collector metallization, and is supplied on foil for pick-and-place into power modules. No TO-247, D2PAK, or other discrete package is associated with this part number.
What is the recommended gate resistor value for optimal switching performance?
The datasheet specifies switching times measured with RG = 3 Ω. For 75 A operation at 125 °C junction temperature, a 2.2–3.3 Ω non-inductive gate resistor is recommended to balance switching loss, dV/dt control, and EMI. Lower values increase peak gate current and risk oscillation; higher values extend switching times and raise losses.
Can SIGC61T60NCX1SA1 be paralleled with other IGBT dies? What precautions apply?
Yes - its positive temperature coefficient of VCE(sat) enables stable paralleling. Required precautions include matched gate drive loop inductance (<5 nH difference), symmetrical thermal mounting (ΔTj < 5 °C), and identical emitter bond wire count/length. Avoid mixing with dies from different wafer lots unless lot-matched characterization data is available.
Does SIGC61T60NCX1SA1 include an integrated freewheeling diode?
No. SIGC61T60NCX1SA1 is a single NPT IGBT die without any integrated diode. In module implementations (e.g., BSM75GD60DLC), a separate ultrafast recovery diode die is co-packaged. System-level freewheeling must be provided externally or via companion diode dies in the same module substrate.
SIGC61T60NCX1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 75 A
- Current - Collector Pulsed (Icm):
- 225 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 75A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- 65ns/170ns
- Test Condition:
- 300V, 75A, 3Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC61T60NCX1SA1 FAQ
1.How can I place an order for SIGC61T60NCX1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC61T60NCX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC61T60NCX1SA1 reliable?
The price and inventory of SIGC61T60NCX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC61T60NCX1SA1 is usually 5 days.
3.What payment methods are accepted for SIGC61T60NCX1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC61T60NCX1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC61T60NCX1SA1?
SIGC61T60NCX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC61T60NCX1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC61T60NCX1SA1?
For technical support, including SIGC61T60NCX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC61T60NCX1SA1 requirements.
6.How does Aetrix verify that SIGC61T60NCX1SA1 is sourced from the original manufacturer or authorized distributors?
All SIGC61T60NCX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC61T60NCX1SA1 meets industry standards.
7.What is the process for return or replacement of SIGC61T60NCX1SA1?
All SIGC61T60NCX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC61T60NCX1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC61T60NCX1SA1 part is unused and in its original packaging.
Return procedure for SIGC61T60NCX1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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