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Infineon Technologies SIGC61T60NCX1SA3
- Part No.:
- SIGC61T60NCX1SA3
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC61T60NCX1SA3.pdf
- Description:
- IGBT 3 CHIP 600V WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:7,789
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Product details
Overview
SIGC61T60NCX1SA3 from Infineon Technologies is a 600 V, 75 A NPT (Non-Punch-Through) IGBT die designed for high-reliability power switching in industrial motor drives. It features a 100 µm chip thickness, positive temperature coefficient for stable paralleling, short-circuit ruggedness up to 10 µs, and emitter-collector saturation voltage of 1.7–2.5 V at 75 A/15 V gate drive. Used in EconoPack2 modules like BSM75GD60DLC.
For engineers reviewing the SIGC61T60NCX1SA3 datasheet, SIGC61T60NCX1SA3 pinout (emitter/gate/collector terminals), SIGC61T60NCX1SA3 application in motor drives or UPS inverters, or SIGC61T60NCX1SA3 equivalent for IGBT die replacement or module redesign, this page delivers verified die-level specifications, thermal and switching behavior, and validated alternatives aligned with Infineon's HV3 process.
Technical Context
This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 4.5–6.5 V and exhibits a positive temperature coefficient for VCE(sat), enabling inherently stable current sharing during parallel operation. Its 6.99 × 8.79 mm² die area and 100 µm thickness are optimized for thermal resistance control and short-circuit withstand capability.
Dynamic performance includes input capacitance of 3300 pF and reverse transfer capacitance of 300 pF at VCE = 25 V, supporting gate drive design for 15 V ±5 V operation. Switching times-td(on) = 65 ns, tr = 25 ns, td(off) = 170 ns, tf = 35 ns-are measured under standardized inductive-load conditions (VCC = 300 V, IC = 75 A, Tj = 125 °C, RG = 3 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE Rating | 600 V - supports 400 V AC input rectified bus applications with 50 % safety margin |
| IC (DC) | 75 A - rated continuous collector current at Tj = 150 °C with proper heatsinking |
| VCE(sat) | 1.7–2.5 V @ 75 A/15 V - determines conduction loss and thermal load in hard-switched inverters |
| VGE(th) | 4.5–6.5 V - ensures robust noise immunity and predictable turn-on across temperature |
| tsc Withstand | 10 µs - enables reliable desaturation protection without external crowbar circuits |
| Ciss | 3300 pF - defines gate charge demand and influences driver sizing for 15 V gate drive |
| Tj Range | −55 to +150 °C - qualified for industrial ambient and junction temperatures in sealed enclosures |
Pinout & Package
Package: Bare die (unmounted silicon chip), 6.99 × 8.79 mm², 100 µm thick, sawn on foil, with aluminum emitter metallization (2 × 2.98 × 5.48 mm), nickel-silver collector metallization, and 0.8 × 1.5 mm² gate pad. Not housed in leadframe or molded package.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter Pad (2×) | Main current return path and reference for gate drive | Dual large-area pads reduce current density and improve bond wire reliability under 75 A RMS |
| Collector Metallization | High-side power output terminal | NiAg system enables low-resistance, thermally stable epoxy or soft-solder die attach to DBC substrates |
| Gate Pad | Control input for MOS-controlled bipolar conduction | 0.8 × 1.5 mm² area supports robust Al wire bonding ≤500 µm diameter with low inductance |
Key Features
| Feature | Design Value |
|---|---|
| NPT technology | Enables uniform electric field distribution and eliminates latch-up risk in high-voltage operation |
| Positive VCE(sat) tempco | Guarantees self-balancing current sharing when multiple dies operate in parallel |
| Short-circuit ruggedness | Withstands 10 µs at rated VCE/IC, simplifying protection circuitry in variable-frequency drives |
| Photoimide passivation | Provides mechanical and environmental protection for frontside metallization during module assembly |
| AlSi1% emitter metallization | Ensures low contact resistance and electromigration resistance under high-current pulsed stress |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Three-phase inverter stage converting DC bus to variable-frequency AC for 15–30 kW induction motors. IC Role / Device Role / Timing Role: Main switching device in each half-bridge leg; commutates at 2–8 kHz with controlled dv/dt. Use Value: 600 V rating and 10 µs short-circuit capability allow direct integration into 400 V DC bus systems with minimal derating. | Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from rectified utility or battery source. IC Role / Device Role / Timing Role: Inverter-stage switch operating in PWM mode with synchronous rectification support. Use Value: Low VCE(sat) minimizes conduction loss during high-efficiency battery-backup operation at partial load. |
| Solar Photovoltaic Inverters | Induction Heating Systems |
Use Scenario: String-level or central inverter DC–AC conversion with MPPT tracking and grid synchronization. IC Role / Device Role / Timing Role: High-side and low-side switch in H-bridge topology; switches at 16–20 kHz to suppress audible noise. Use Value: Stable dynamic parameters (Ciss, Crss) ensure predictable EMI profile and gate drive loss across temperature. | Use Scenario: Resonant half-bridge inverter driving series-LC tank at 20–100 kHz for metal melting or surface hardening. IC Role / Device Role / Timing Role: Hard-switched power switch handling repetitive 75 A peak currents with fast fall time (35 ns). Use Value: Fast tf and low tail current reduce switching loss during zero-voltage transition attempts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKW40N60H3 | 600 V/40 A trench-stop IGBT die; lower VCE(sat) (1.55 V typ), higher Ciss (4200 pF) | Better efficiency at <30 A, but reduced short-circuit ruggedness (6 µs) | Select for higher-frequency, lower-current inverters where thermal margin allows reduced die count |
| FGH60N60SMD | 600 V/60 A field-stop IGBT die; VCE(sat) = 1.8 V typ, tf = 45 ns, no published tsc rating | Higher current rating than SIGC61T60NC but unverified short-circuit capability | Prefer for cost-sensitive 60 A designs where module-level protection handles fault clearing |
Compared with IKW40N60H3 and FGH60N60SMD, SIGC61T60NCX1SA3 offers superior short-circuit ruggedness and proven paralleling stability-critical for high-power industrial drives where single-point failure must be avoided-but requires larger gate drive energy due to higher Ciss.
Availability
SIGC61T60NCX1SA3 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar photovoltaic inverters requiring stable component supply, long-lifecycle support, and traceable bare-die sourcing.
Supply support for SIGC61T60NCX1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and wafer fabrication facilities.
SIGC61T60NCX1SA3 belongs to Infineon's HV3 high-voltage IGBT die family, engineered for module integration in industrial-grade power conversion systems demanding ruggedness, thermal stability, and long-term reliability.
FAQ
Is SIGC61T60NCX1SA3 supplied as a packaged device or bare die?
SIGC61T60NCX1SA3 is supplied exclusively as a bare silicon die-unmounted, sawn on foil, with no leadframe, molding compound, or terminations. It is intended for integration into power modules such as Infineon's EconoPack2 platform (e.g., BSM75GD60DLC). No TO-247 or surface-mount package variants exist for this part number.
What is the recommended gate resistor value for reliable switching?
A 3 Ω gate resistor is specified in the datasheet for switching characterization (td(on), tf, etc.) at Tj = 125 °C. For production use, 4.7–10 Ω is typical to limit di/dt, suppress oscillation, and reduce EMI-especially when paired with Infineon's 1ED020I12-F2 or 2ED020I12-F2 gate drivers calibrated for NPT IGBTs.
Does this die support parallel operation without external current-sharing resistors?
Yes-its positive temperature coefficient of VCE(sat) ensures inherent current balancing across multiple dies under matched thermal mounting conditions. However, matched gate drive loop inductance and symmetrical layout remain essential; external emitter resistors are not required but may be used for fine-tuning in high-precision applications.
What thermal interface material is qualified for die attachment?
Infineon qualifies both electrically conductive epoxy (e.g., Henkel Loctite ABLESTIK QMI510) and soft solder (SnAgCu or SnPb) for attaching SIGC61T60NCX1SA3 to DBC substrates. The NiAg collector metallization provides excellent wetting and adhesion; photoimide passivation prevents delamination during thermal cycling up to 150 °C junction temperature.
SIGC61T60NCX1SA3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 75 A
- Current - Collector Pulsed (Icm):
- 225 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 75A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- 65ns/170ns
- Test Condition:
- 300V, 75A, 3Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC61T60NCX1SA3 FAQ
1.How can I place an order for SIGC61T60NCX1SA3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC61T60NCX1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC61T60NCX1SA3 reliable?
The price and inventory of SIGC61T60NCX1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC61T60NCX1SA3 is usually 5 days.
3.What payment methods are accepted for SIGC61T60NCX1SA3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC61T60NCX1SA3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC61T60NCX1SA3?
SIGC61T60NCX1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC61T60NCX1SA3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC61T60NCX1SA3?
For technical support, including SIGC61T60NCX1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC61T60NCX1SA3 requirements.
6.How does Aetrix verify that SIGC61T60NCX1SA3 is sourced from the original manufacturer or authorized distributors?
All SIGC61T60NCX1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC61T60NCX1SA3 meets industry standards.
7.What is the process for return or replacement of SIGC61T60NCX1SA3?
All SIGC61T60NCX1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC61T60NCX1SA3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC61T60NCX1SA3 part is unused and in its original packaging.
Return procedure for SIGC61T60NCX1SA3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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