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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC76T65R3EX1SA1

Name: SIGC76T65R3EX1SA1
Brand: Infineon Technologies
SKU: SIGC76T65R3EX1SA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC76T65R3EX1SA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC76T65R3EX1SA1.pdf

Description:: IGBT TRENCH FS 650V 150A DIE

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Product details

Overview

SIGC76T65R3EX1SA1 from Infineon Technologies is a 650 V, 150 A rated TRENCHSTOP™ IGBT3 bare die optimized for industrial power modules in motor drives. It features 1.45 V typical V_CE(sat) at 150 A/25°C, 9240 pF input capacitance (C_ies), and 6 µs short-circuit withstand time under V_GE=15 V, V_CC=360 V, T_vj=150°C - enabling high-efficiency, compact inverter designs.

For engineers reviewing the SIGC76T65R3EX1SA1 datasheet, SIGC76T65R3EX1SA1 pinout, SIGC76T65R3EX1SA1 application, or SIGC76T65R3EX1SA1 equivalent, key selection criteria include V_CE(sat) vs. temperature stability, short-circuit ruggedness, gate charge behavior in module-level switching, and die-level thermal interface compatibility with AlN/DBC substrates.

Technical Context

This IGBT3 die employs trench-gate and field-stop architecture to achieve low conduction loss and controlled tail current decay. Its positive V_CE(sat) temperature coefficient enables stable parallel operation without external current-sharing resistors.

Static parameters are characterized on-wafer at 25°C and 150°C, including V_CE(sat) (1.45–1.7 V), V_GE(th) (5.1–6.4 V), and C_ies (9240 pF). Short-circuit capability is validated at 6 µs with strict thermal derating guidance per module mounting design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	650 V - supports 400 V AC input rectified bus systems with 20% voltage margin
I_C,nom	150 A - continuous collector current at T_vj ≤ 150°C, defined for module-level thermal management
V_CE(sat)	1.45 V typ. @ 150 A, 25°C - sets baseline conduction loss in inverter leg; rises to 1.7 V @ 150°C
C_ies	9240 pF @ 25 V - determines gate drive strength requirement and EMI filtering needs
t_sc	6 µs @ V_GE=15 V, V_CC=360 V, T_vj=150°C - defines hardware-based fault-clearing window
V_GE(th)	5.8 V typ. - ensures robust noise immunity against false turn-on in noisy industrial environments
r_G	2 Ω integrated - reduces external gate resistor count and improves layout symmetry in multi-die modules

Pinout & Package

Package: Bare die (sawn on foil), 7.87 mm × 9.69 mm, 70 µm silicon thickness, Ni/Ag backside metallization. Not housed in leaded or surface-mount package.

Pin/Terminal	Circuit Role	Design Meaning
E (Emitter)	Main emitter connection	Multiple large-area pads (E) enable low-inductance, high-current bond-out to emitter substrate
G (Gate)	Control terminal	Single 1.615 mm × 0.817 mm AlSiCu pad; requires low-impedance gate loop to minimize oscillation
T (Test)	Process monitoring	Non-functional test pad - must not be electrically contacted in final assembly

Key Features

Feature	Design Value
Low V_CE(sat) with positive tempco	Enables direct paralleling of multiple dies without current imbalance or thermal runaway
Short tail current	Reduces turn-off energy (E_off) by >25% vs. IGBT2, lowering heatsink requirements in 10–20 kHz drives
Integrated 2 Ω gate resistor	Eliminates discrete gate resistor placement error and improves matching across multi-die modules
6 µs short-circuit withstand	Allows use with standard 5–10 µs DESAT detection circuits without gate driver redesign

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: 15–75 kW variable-frequency drives for HVAC compressors and conveyor systems.

IC Role / Device Role / Timing Role: Main switching device in 2-level inverter leg; operates at 8–16 kHz with active gate control.

Use Value: Low V_CE(sat) and short tail current reduce total losses by ~12% vs. comparable IGBT2 dies, improving system efficiency to >98.1% at full load.

Use Scenario: Online double-conversion UPS with bidirectional inverter/rectifier stages.

IC Role / Device Role / Timing Role: Inverter-side switch handling 400 V DC bus; synchronized with SiC diode freewheel path.

Use Value: 6 µs t_sc tolerance aligns with fast DESAT protection IC response times, enabling <10 µs fault shutdown without desaturation-induced latch-up.

Solar String Inverters

Induction Heating Systems

Use Scenario: 10–25 kW string inverters using 3-level NPC topology with split DC-link capacitors.

IC Role / Device Role / Timing Role: High-side and low-side switch in phase-leg; subjected to hard-switching and partial soft-switching conditions.

Use Value: Positive V_CE(sat) tempco ensures balanced current sharing across paralleled dies during transient overloads up to 125% rated current.

Use Scenario: 20–50 kW resonant induction heating generators operating at 10–50 kHz.

IC Role / Device Role / Timing Role: Half-bridge switch controlling tank circuit current; subject to high di/dt and voltage overshoot.

Use Value: Low C_ies/C_res ratio (≈34:1) suppresses Miller-induced false turn-on, reducing need for negative gate bias or active Miller clamp.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65ES5	Bare die variant of same IGBT3 generation; identical V_CE, but rated 40 A (smaller die size, 4.2×4.2 mm)	Targeted for lower-power modules (<10 kW); lacks thermal mass for sustained 150 A operation	Select when scaling down inverter capacity while retaining same process and gate drive compatibility
FF400R12ME4	1200 V, 400 A hybrid module (IGBT + diode); includes integrated NTC and press-fit terminals	Pre-packaged solution requiring no die attach or wire bonding; incompatible with custom substrate layouts	Choose for rapid prototyping or low-volume production where module-level integration outweighs die-level flexibility

Compared with IKW40N65ES5 and FF400R12ME4, SIGC76T65R3EX1SA1 uniquely balances 150 A current capability, 7.87×9.69 mm die area for thermal spreading, and bare-die form factor - making it the only option for high-power, custom-packaged industrial drives requiring precise thermal and electrical optimization.

Availability

SIGC76T65R3EX1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for SIGC76T65R3EX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

SIGC76T65R3EX1SA1 belongs to the TRENCHSTOP™ IGBT3 bare die product line, engineered specifically for high-reliability, high-current industrial power modules where thermal density, short-circuit robustness, and parallel scalability are critical.

FAQ

Is SIGC76T65R3EX1SA1 qualified for automotive applications?

No. This bare die is explicitly not qualified to AEC-Q101 or any automotive reliability standard. Infineon states in the datasheet that it is intended for industrial power modules only, and warns against use in safety-critical applications where failure could cause personal injury. Automotive-grade alternatives require separate qualification and packaging.

What is the recommended die attach method for SIGC76T65R3EX1SA1?

Infineon specifies electrically conductive epoxy glue or soft solder for die attachment. The backside uses Ni/Ag metallization - the Ni layer must not be fully consumed during soldering to ensure long-term bond integrity and thermal resistance stability. Solder voiding and epoxy cure uniformity must be monitored per IPC-J-STD-020.

Does SIGC76T65R3EX1SA1 include an integrated anti-parallel diode?

No. This is a single-die IGBT without monolithically integrated freewheeling diode. External ultrafast diodes (e.g., IDH08SG60C) must be co-packaged in the module. The chip drawing shows only E, G, and T terminals - no cathode/anode markings or diode junction structures are present.

How is short-circuit ruggedness validated for this bare die?

Short-circuit withstand time (t_sc = 6 µs) is validated under strictly defined conditions: V_GE = 15 V, V_CC = 360 V, T_vj = 150°C. Infineon notes that switching and thermal behavior depend strongly on module design - therefore t_sc must be re-verified at package level, including RBSOA and SCSOA testing, before production release.

SIGC76T65R3EX1SA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: Die

Packaging:: Bulk

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 150 A

Current - Collector Pulsed (Icm):: 450 A

Vce(on) (Max) @ Vge, Ic:: 1.2V @ 15V, 45A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC76T65R3EX1SA1 FAQ

1.How can I place an order for SIGC76T65R3EX1SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC76T65R3EX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC76T65R3EX1SA1 reliable?

The price and inventory of SIGC76T65R3EX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC76T65R3EX1SA1 is usually 5 days.

3.What payment methods are accepted for SIGC76T65R3EX1SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC76T65R3EX1SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC76T65R3EX1SA1?

SIGC76T65R3EX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC76T65R3EX1SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC76T65R3EX1SA1?

For technical support, including SIGC76T65R3EX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC76T65R3EX1SA1 requirements.

6.How does Aetrix verify that SIGC76T65R3EX1SA1 is sourced from the original manufacturer or authorized distributors?

All SIGC76T65R3EX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC76T65R3EX1SA1 meets industry standards.

7.What is the process for return or replacement of SIGC76T65R3EX1SA1?

All SIGC76T65R3EX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC76T65R3EX1SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC76T65R3EX1SA1 part is unused and in its original packaging.

Return procedure for SIGC76T65R3EX1SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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