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Infineon Technologies SIGC81T60NCX1SA3
- Part No.:
- SIGC81T60NCX1SA3
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC81T60NCX1SA3.pdf
- Description:
- IGBT 3 CHIP 600V WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:9,357
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Product details
Overview
SIGC81T60NCX1SA3 from Infineon Technologies is a 600 V, 100 A NPT (Non-Punch-Through) IGBT die designed for high-power switching in industrial motor drives. It features a 100 µm chip thickness, positive temperature coefficient for stable parallel operation, short-circuit ruggedness, and 8.99 × 8.99 mm² die size with aluminum emitter metallization and nickel-silver collector metallization.
For engineers reviewing the SIGC81T60NCX1SA3 datasheet, SIGC81T60NCX1SA3 pinout (emitter/gate/collector terminals), SIGC81T60NCX1SA3 application in drive inverters, or SIGC81T60NCX1SA3 equivalent for module integration, this page delivers verified die-level specifications, thermal and dynamic performance data, and packaging context for reliable power module design and qualification.
Technical Context
This IGBT die employs Non-Punch-Through (NPT) technology with a 100 µm silicon thickness, enabling robust short-circuit withstand time and inherent positive temperature coefficient of VCE(sat). Its 600 V blocking voltage and 100 A DC current rating are validated at Tj = 25 °C and Tj = 125 °C respectively.
Dynamic behavior is characterized by td(on) = 95 ns, tr = 30 ns, td(off) = 200 ns, and tf = 35 ns under VCC = 300 V, IC = 100 A, VGE = ±15 V, RG = 2.2 Ω. Input capacitance Ciss is 4300 pF, and reverse transfer capacitance Crss is 400 pF at VCE = 25 V, f = 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE Rating | 600 V - supports 400 V AC input rectified bus systems with 50% safety margin |
| IC (DC) | 100 A - defines continuous conduction capability at Tj ≤ 150 °C with appropriate heatsinking |
| VCE(sat) | 1.7–2.5 V @ VGE=15 V, IC=100 A - determines on-state conduction loss and thermal load |
| VGE(th) | 4.5–6.5 V - ensures gate drive compatibility with standard +15 V logic-level drivers |
| td(off) + tf | 235 ns max - sets minimum achievable switching frequency and Eoff energy in hard-switched topologies |
| Tj Range | −55 to +150 °C - enables operation in harsh industrial environments including enclosed drive cabinets |
| Ciss | 4300 pF - influences gate drive power requirement and Miller effect sensitivity |
Pinout & Package
SIGC81T60NCX1SA3 is a bare die (chip) supplied on foil, not in a leaded or surface-mount package. It has three functional terminals: Emitter (E), Gate (G), and Collector (C), arranged per the official Infineon chip drawing. Die bonding uses electrically conductive glue or solder; wire bonding employs aluminum wires ≤500 µm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter (E) | Main current return path | 8×(1.77×2.82) mm² AlSi1% pad - optimized for low-inductance, high-current interconnect in press-pack or solder-bonded modules |
| Gate (G) | Control electrode | 0.78×1.51 mm² pad - sized for robust wire bond attachment and low-impedance gate loop in high-dI/dt applications |
| Collector (C) | High-side power terminal | NiAg metallized backside - compatible with epoxy and soft-solder die attach; enables low-resistance, thermally efficient mounting to DBC substrates |
Key Features
| Feature | Design Value |
|---|---|
| NPT silicon technology | Enables inherent short-circuit ruggedness (tSC > 10 µs) without external desaturation protection circuitry |
| Positive VCE(sat) tempco | Allows stable current sharing across paralleled dies without active current balancing networks |
| 100 µm chip thickness | Optimizes trade-off between breakdown voltage, switching speed, and thermal resistance in 600 V class |
| Photoimide passivation | Provides mechanical protection and humidity resistance during module assembly and long-term operation |
| Al emitter / NiAg collector metallization | Supports both solder and conductive epoxy die attach while maintaining low contact resistance and thermal interface stability |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Three-phase inverter stage in 75–110 kW variable-frequency drives for pumps and compressors. IC Role / Device Role / Timing Role: Main switching device in 2-level voltage-source inverter topology, operating at 2–8 kHz PWM frequency. Use Value: 100 A current rating and 235 ns total turn-off time enable high-efficiency, low-loss operation with minimal heatsink volume. | Use Scenario: Output inverter stage in online double-conversion UPS systems delivering clean 50/60 Hz sine wave to critical IT loads. IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage, requiring precise dead-time control and low VCE(sat) to minimize conduction loss during battery backup mode. Use Value: Positive temperature coefficient ensures balanced current distribution across parallel devices under transient overload conditions. |
| Renewable Energy Inverters | Induction Heating Systems |
Use Scenario: DC–AC stage in central solar inverters converting 600–1000 V DC string voltage to grid-synchronized AC. IC Role / Device Role / Timing Role: Low-side switch in NPC (Neutral Point Clamped) or T-type inverter configuration, rated for repetitive 600 V blocking and 100 A RMS current. Use Value: 600 V VCE rating matches standard PV string voltages; short-circuit proof design improves system reliability during ground-fault transients. | Use Scenario: Half-bridge resonant inverter in medium-frequency (10–50 kHz) induction heating units for metal forging and brazing. IC Role / Device Role / Timing Role: Fast-switching power switch in series-resonant tank circuit, requiring low tail current and controlled fall time to minimize switching loss at high frequency. Use Value: 35 ns fall time and 400 pF Crss reduce Miller-induced false turn-on risk and improve ZVS capability in resonant designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FS100R06KE3 | Module-integrated 600 V/100 A IGBT with co-packaged diode; larger footprint, higher thermal resistance than bare die | Pre-assembled in EasyPIM™ housing; eliminates die attach and wire bonding steps but limits customization | Select when rapid prototyping or lower assembly complexity is prioritized over thermal optimization |
| IKW100N60T | Trench-stop IGBT with lower VCE(sat) (1.5 V typ) but reduced short-circuit withstand time (5 µs) | Better conduction efficiency at light loads; requires tighter gate drive timing and desat detection for fault protection | Select when system-level efficiency dominates over ruggedness requirements in well-controlled environments |
Compared with FS100R06KE3 and IKW100N60T, SIGC81T60NCX1SA3 offers superior short-circuit ruggedness and die-level flexibility for custom module integration, making it optimal for high-reliability industrial inverters where thermal management and parallel scalability are critical design constraints.
Availability
SIGC81T60NCX1SA3 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, renewable energy inverters, and induction heating systems requiring stable component supply and qualified bare-die sourcing.
Supply support for SIGC81T60NCX1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, headquartered in Munich.
SIGC81T60NCX1SA3 belongs to Infineon's high-voltage IGBT die portfolio targeting industrial power conversion, emphasizing ruggedness, parallel scalability, and thermal performance in custom power modules.
FAQ
Is SIGC81T60NCX1SA3 supplied with a package or as a bare die?
SIGC81T60NCX1SA3 is supplied as a bare silicon die mounted on foil, not in any molded or leaded package. It requires die attach (conductive epoxy or solder) and aluminum wire bonding in module assembly. The ordering code X1SA3 confirms Infineon's standard die-on-foil format with ink dot marking and nitrogen storage requirements.
What gate drive voltage is required for reliable operation?
A gate-emitter voltage of ±15 V is specified for switching, with VGE(th) ranging from 4.5 V to 6.5 V. To ensure full enhancement and low VCE(sat), a minimum +15 V gate drive is recommended. Negative turn-off bias (−15 V) suppresses Miller-induced false turn-on in high-dv/dt environments typical of multi-level inverters.
Can SIGC81T60NCX1SA3 be paralleled without external current-sharing components?
Yes-its positive temperature coefficient of VCE(sat) enables natural current balancing across paralleled dies. This eliminates need for emitter resistors or active current sensing in most industrial drive applications, provided layout symmetry, matched gate drive impedance, and uniform thermal mounting are maintained per Infineon's module design guidelines.
What is the maximum allowable junction temperature during short-circuit conditions?
The device is rated for short-circuit withstand time of ≥10 µs at Tj = 150 °C, VCE = 600 V, and VGE = 15 V. During such events, junction temperature rises rapidly; safe operation requires fast desaturation detection (< 2 µs response) and gate turn-off within the specified time window to prevent irreversible thermal runaway.
SIGC81T60NCX1SA3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 100 A
- Current - Collector Pulsed (Icm):
- 300 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 100A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- 95ns/200ns
- Test Condition:
- 300V, 100A, 2.2Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC81T60NCX1SA3 FAQ
1.How can I place an order for SIGC81T60NCX1SA3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC81T60NCX1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC81T60NCX1SA3 reliable?
The price and inventory of SIGC81T60NCX1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC81T60NCX1SA3 is usually 5 days.
3.What payment methods are accepted for SIGC81T60NCX1SA3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC81T60NCX1SA3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC81T60NCX1SA3?
SIGC81T60NCX1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC81T60NCX1SA3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC81T60NCX1SA3?
For technical support, including SIGC81T60NCX1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC81T60NCX1SA3 requirements.
6.How does Aetrix verify that SIGC81T60NCX1SA3 is sourced from the original manufacturer or authorized distributors?
All SIGC81T60NCX1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC81T60NCX1SA3 meets industry standards.
7.What is the process for return or replacement of SIGC81T60NCX1SA3?
All SIGC81T60NCX1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC81T60NCX1SA3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC81T60NCX1SA3 part is unused and in its original packaging.
Return procedure for SIGC81T60NCX1SA3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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