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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC81T60NCX1SA5

Name: SIGC81T60NCX1SA5
Brand: Infineon Technologies
SKU: SIGC81T60NCX1SA5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC81T60NCX1SA5

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC81T60NCX1SA5.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:6,017

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Product details

Overview

SIGC81T60NCX1SA5 from Infineon Technologies is a 600 V, 100 A NPT (Non-Punch-Through) IGBT die designed for high-power switching in industrial motor drives. It features a 100 µm chip thickness, positive temperature coefficient for stable paralleling, short-circuit ruggedness, and 8.99 × 8.99 mm² die size with Al–Si 1% emitter metallization and Ni–Ag collector system. Used in 3-phase inverter modules for HVAC compressors and traction inverters.

For engineers reviewing the SIGC81T60NCX1SA5 datasheet, SIGC81T60NCX1SA5 pinout (emitter/gate/collector terminals), SIGC81T60NCX1SA5 application in motor drive modules, or SIGC81T60NCX1SA5 equivalent IGBT dies, this page provides verified die-level specifications, thermal and dynamic performance data, bonding interface details, and substitution guidance aligned with Infineon's HV3 process family.

Technical Context

This IGBT die employs Non-Punch-Through (NPT) technology with a 100 µm wafer thickness and 150 mm silicon substrate, enabling robust short-circuit withstand time (tSC ≥ 10 µs at Tj = 125 °C, VCE = 300 V). Its positive VCE(sat) temperature coefficient (1.7–2.5 V at IC = 100 A, VGE = 15 V) ensures current sharing stability when paralleled.

Dynamic behavior is characterized by td(on) = 95 ns, tr = 30 ns, td(off) = 200 ns, and tf = 35 ns under standardized inductive load test conditions (VCC = 300 V, IC = 100 A, VGE = ±15 V, RG = 2.2 Ω), with Ciss = 4300 pF and Crss = 400 pF measured at VCE = 25 V, f = 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage rating; defines use in 400 V AC input systems with 2× safety margin.
I_C	100 A - Continuous DC collector current at T_jmax; sets thermal design baseline for module baseplate sizing.
V_CE(sat)	1.7–2.5 V - On-state voltage range at 100 A; directly determines conduction loss and junction temperature rise.
V_GE(th)	4.5–6.5 V - Gate threshold voltage window; informs gate driver voltage headroom and noise immunity design.
t_f	35 ns - Fall time at T_j = 125 °C; constrains minimum PWM period and switching loss in hard-switched topologies.
C_iss	4300 pF - Input capacitance; impacts gate drive power requirement and Miller effect susceptibility.
Die Size	8.99 × 8.99 mm² - Active silicon area; determines thermal resistance R_thJC scaling and die attach area for epoxy/solder bonding.

Pinout & Package

SIGC81T60NCX1SA5 is a bare die (chip-on-foil) without leadframe or molded package. It is supplied on sawn foil with emitter, gate, and collector terminals exposed on frontside metallization. Bonding interfaces: Al wire ≤500 µm; electrically conductive glue or solder die attach; photoimide passivation.

Pin/Terminal	Circuit Role	Design Meaning
Emitter Pad (8×)	Main current return path	Eight 1.77 × 2.82 mm Al–Si pads enable low-inductance parallel wire bonding and reduce current crowding.
Gate Pad	Control terminal	Single 0.78 × 1.51 mm pad optimized for low-impedance gate signal routing and minimal Miller capacitance.
Collector Backside	High-side power terminal	Ni–Ag metallized backside enables low-resistance, thermally efficient solder or epoxy attachment to DBC substrates.

Key Features

Feature	Design Value
NPT Technology	Enables soft switching behavior and inherent short-circuit ruggedness without external desaturation protection circuitry.
Positive V_CE(sat) Tempco	Ensures natural current balancing in multi-die parallel configurations without active current-sharing control.
100 µm Chip Thickness	Optimizes trade-off between breakdown voltage capability and switching speed; supports 125 °C continuous operation.
Photoimide Passivation	Provides reliable moisture and ion contamination barrier for long-term reliability in humid industrial environments.
Al–Si 1% Emitter Metallization	Delivers low contact resistance and high electromigration resistance for >10⁶ switching cycles at rated current.

Applications

Industrial Motor Drives

HVAC Compressor Inverters

Use Scenario: Three-phase 400 V AC-fed inverter driving 15–30 kW induction motors in pump/fan systems.

IC Role / Device Role / Timing Role: Main switching device in 6-pack IGBT module; handles 10 kHz PWM with <10 µs short-circuit tolerance.

Use Value: Enables compact heatsink design due to low V_CE(sat) and predictable thermal derating up to 150 °C junction.

Use Scenario: Variable-speed compressor control in commercial rooftop HVAC units with refrigerant cycle optimization.

IC Role / Device Role / Timing Role: High-side switch in two-level inverter bridge; operates at 8–12 kHz with field-oriented control.

Use Value: Stable paralleling allows dual-die per switch leg, improving power density while maintaining SOA integrity.

Traction Inverters (Auxiliary)

Uninterruptible Power Supplies

Use Scenario: Auxiliary 3-phase inverter for battery-powered auxiliary systems in rail vehicles (e.g., HVAC, lighting).

IC Role / Device Role / Timing Role: Medium-power switching element in 200–400 V DC-link topology; rated for 100 khr lifetime at 125 °C.

Use Value: Short-circuit proof design eliminates need for fast desat detection, simplifying gate driver BOM and layout.

Use Scenario: Output stage of online double-conversion UPS delivering clean 230 V AC at 5–10 kVA with <5% THD.

IC Role / Device Role / Timing Role: Inverter leg switch handling 60 Hz fundamental + 3rd/5th harmonic content; operates with low dv/dt stress.

Use Value: Low Crss (400 pF) minimizes Miller-induced turn-on risk during high dv/dt commutation events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
FS400R07A4E3	750 V, 400 A module-integrated die; trench-stop technology; lower V_CE(sat) (1.55 V typ) but higher C_iss (6200 pF)	Targeted for higher-power 600 V systems requiring integrated press-fit packaging	Select when full module integration and higher current rating outweigh bare-die flexibility and cost-per-watt.
IKW40N60H3	600 V, 40 A discrete TO-247 packaged IGBT; H3 high-speed variant; faster switching (t_f = 22 ns) but lower I_C rating	Designed for lower-power, board-mountable designs with simplified thermal management	Select for prototyping or low-volume production where bare-die assembly infrastructure is unavailable.

Compared with FS400R07A4E3 and IKW40N60H3, SIGC81T60NCX1SA5 offers optimal balance of current rating, thermal scalability via die attach, and proven ruggedness in high-reliability industrial modules-making it preferred for custom-packaged, medium-power inverter platforms.

Availability

SIGC81T60NCX1SA5 is available at Aetrix Electronics and suitable for industrial motor drives, HVAC compressor inverters, traction auxiliary systems, and uninterruptible power supplies requiring stable component supply and long-lifecycle support.

Supply support for SIGC81T60NCX1SA5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing facilities.

SIGC81T60NCX1SA5 belongs to Infineon's HV3 high-voltage IGBT die family, engineered specifically for rugged, high-current industrial inverter modules operating up to 150 °C junction temperature.

FAQ

Is SIGC81T60NCX1SA5 a packaged device or a bare die?

SIGC81T60NCX1SA5 is a bare IGBT die supplied on sawn foil with frontside emitter/gate metallization and backside collector metallization. It requires mounting onto a DBC substrate or direct bond copper baseplate using conductive epoxy or solder, followed by aluminum wire bonding. No leadframe, molding compound, or housing is included.

What is the maximum allowable gate-emitter voltage during operation?

The absolute maximum gate-emitter voltage is ±20 V DC, as specified in the Infineon datasheet. Operation beyond ±15 V risks irreversible gate oxide damage. Gate drivers must limit transient overshoot to ≤±18 V under all conditions, including parasitic inductance effects during turn-off.

Can SIGC81T60NCX1SA5 be paralleled without external current-balancing components?

Yes-its positive temperature coefficient of V_CE(sat) enables stable current sharing across multiple dies when mounted on a common heatsink with matched thermal impedance. However, symmetrical gate drive layout, matched gate resistors (≤5% tolerance), and identical wire bond lengths are mandatory to avoid dynamic imbalance.

What die attach methods are qualified for SIGC81T60NCX1SA5?

Infineon qualifies both solder (SnAgCu or SnPb) and electrically conductive epoxy for die attach. Solder provides lower thermal resistance (<0.2 K/W typical) and higher power cycling endurance; conductive epoxy offers lower processing temperature (<200 °C) and eliminates voiding risk. Ni–Ag backside metallization ensures compatibility with both processes.

SIGC81T60NCX1SA5 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 100 A

Current - Collector Pulsed (Icm):: 300 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 100A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 95ns/200ns

Test Condition:: 300V, 100A, 2.2Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC81T60NCX1SA5 FAQ

1.How can I place an order for SIGC81T60NCX1SA5 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC81T60NCX1SA5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC81T60NCX1SA5 reliable?

The price and inventory of SIGC81T60NCX1SA5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC81T60NCX1SA5 is usually 5 days.

3.What payment methods are accepted for SIGC81T60NCX1SA5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC81T60NCX1SA5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC81T60NCX1SA5?

SIGC81T60NCX1SA5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC81T60NCX1SA5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC81T60NCX1SA5?

For technical support, including SIGC81T60NCX1SA5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC81T60NCX1SA5 requirements.

6.How does Aetrix verify that SIGC81T60NCX1SA5 is sourced from the original manufacturer or authorized distributors?

All SIGC81T60NCX1SA5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC81T60NCX1SA5 meets industry standards.

7.What is the process for return or replacement of SIGC81T60NCX1SA5?

All SIGC81T60NCX1SA5 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC81T60NCX1SA5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC81T60NCX1SA5 part is unused and in its original packaging.

Return procedure for SIGC81T60NCX1SA5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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